Epi-papa
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200mm 8 iniha GaN ma ka sapphire Epi-layer wafer substrate
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ʻO GaN ma ke aniani 4-ʻīniha: Nā koho aniani hiki ke hoʻopili ʻia me JGS1, JGS2, BF33, a me ka Quartz maʻamau.
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AlN-on-NPSS Wafer: High-Performance Aluminum Nitride Layer on Non-Polished Sapphire Substrate for High-Temperature, High-Power, and RF Applications
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Gallium Nitride ma Silicon wafer 4inihi 6inihi i hoʻonohonoho ʻia ʻo Si Substrate Orientation, Resistivity, a me nā koho N-type/P-type
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Nā Wafer Epitaxial GaN-on-SiC (100mm, 150mm) – Nā Koho Substrate SiC Nui (4H-N, HPSI, 4H/6H-P)
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ʻO GaN-on-Diamond Wafers 4inch 6inch Total epi mānoanoa (micron) 0.6 ~ 2.5 a i hana ʻia no nā noi kiʻekiʻe.
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GaAs kiʻekiʻe-mana epitaxial wafer substrate gallium arsenide wafer mana laser hawewe lōʻihi 905nm no ka laser lapaʻau lapaʻau.
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InGaAs epitaxial wafer substrate PD Array photodetector arrays hiki ke hoʻohana no LiDAR
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2inihi 3inihi 4inihi InP epitaxial wafer substrate APD mea ʻike kukui no nā kamaʻilio fiber optic a i ʻole LiDAR
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Silicon-On-Insulator Substrate SOI wafer ekolu papa no Microelectronics a me Radio Frequency
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SOI wafer insulator ma ke silikona 8-inihi a me 6-inihi SOI (Silicon-On-Insulator) wafers
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6inihi SiC Epitaxiy wafer N/P ʻano ʻae ʻia i hoʻopilikino ʻia