Ua kū mai nā keramika silicon carbide (SiC) kiʻekiʻe-maʻemaʻe ma ke ʻano he mau mea kūpono no nā ʻāpana koʻikoʻi i nā ʻoihana semiconductor, aerospace, a me nā kemika ma muli o ko lākou conductivity thermal kūikawā, kūpaʻa kemika, a me ka ikaika mechanical. Me ka hoʻonui ʻana o nā koi no nā mea hana keramika hana kiʻekiʻe, haʻahaʻa-haʻahaʻa, ua lilo ka hoʻomohala ʻana i nā ʻenehana hoʻomākaukau kūpono a hiki ke hoʻonui ʻia no nā keramika SiC kiʻekiʻe-maʻemaʻe i mea e nānā ai i ka honua. Ke nānā pono nei kēia pepa i nā ʻano hoʻomākaukau nui o kēia manawa no nā keramika SiC kiʻekiʻe-maʻemaʻe, me ka recrystallization sintering, pressureless sintering (PS), hot pressing (HP), spark plasma sintering (SPS), a me ka hana additive (AM), me ka hoʻoikaika ʻana i ke kūkākūkā ʻana i nā ʻano hana sintering, nā palena koʻikoʻi, nā waiwai mea, a me nā pilikia o kēlā me kēia kaʻina hana.
ʻO ka hoʻohana ʻana o nā keramika SiC i nā kahua koa a me nā ʻenekinia
I kēia manawa, hoʻohana nui ʻia nā ʻāpana keramika SiC kiʻekiʻe-maʻemaʻe i nā lako hana wafer silicon, e komo ana i nā kaʻina hana koʻikoʻi e like me ka oxidation, lithography, etching, a me ka implantation ion. Me ka holomua o ka ʻenehana wafer, ua lilo ka hoʻonui ʻana i nā nui wafer i mea koʻikoʻi. ʻO ka nui o ka wafer nui o kēia manawa he 300 mm, e hoʻokō ana i kahi kaulike maikaʻi ma waena o ke kumukūʻai a me ka hiki ke hana. Eia naʻe, i hoʻokele ʻia e ke kānāwai o Moore, aia ka hana nui o nā wafers 450 mm ma ka papahana. ʻO nā wafers nui e pono ai ka ikaika kūkulu kiʻekiʻe e pale aku i ka warping a me ka deformation, e hoʻokele hou ana i ka ulu ʻana o ke koi no nā ʻāpana keramika SiC nui, ikaika kiʻekiʻe, a maʻemaʻe. I nā makahiki i hala iho nei, ua hōʻike ka hana additive (3D printing), ma ke ʻano he ʻenehana prototyping wikiwiki ʻaʻole pono i nā molds, i ka hiki ke hana ʻia o nā ʻāpana keramika SiC paʻakikī ma muli o kona kūkulu papa-ma-papa a me nā hiki ke hoʻolālā maʻalahi, e huki ana i ka nānā nui.
E kālailai pono kēia pepa i ʻelima mau ʻano hoʻomākaukau no nā keramika SiC kiʻekiʻe—recrystallization sintering, pressureless sintering, hot pressing, spark plasma sintering, a me ka hana additive—e kālele ana i kā lākou mau ʻano sintering, nā hoʻolālā hoʻonui kaʻina hana, nā ʻano hana mea, a me nā manaʻolana noi ʻoihana.
Nā koi mea maka silicon carbide kiʻekiʻe-maʻemaʻe
I. Hoʻopili hou ʻana i ka Sintering
ʻO ka silicon carbide i hoʻopili hou ʻia (RSiC) kahi mea SiC maʻemaʻe kiʻekiʻe i hoʻomākaukau ʻia me ka ʻole o nā kōkua sintering ma nā mahana kiʻekiʻe o 2100-2500°C. Mai ka wā i ʻike mua ai ʻo Fredriksson i ka hanana recrystallization i ka hopena o ke kenekulia 19, ua loaʻa iā RSiC ka nānā nui ma muli o kona mau palena hua maʻemaʻe a me ka ʻole o nā ʻano aniani a me nā haumia. I nā mahana kiʻekiʻe, hōʻike ʻo SiC i ke kaomi mahu kiʻekiʻe, a ʻo kāna ʻano sintering e pili nui ana i kahi kaʻina hana evaporation-condensation: evaporate nā hua liʻiliʻi a waiho hou ma luna o nā ʻili o nā hua nui, e paipai ana i ka ulu ʻana o ka ʻāʻī a me ka hoʻopili pololei ʻana ma waena o nā hua, no laila e hoʻonui ai i ka ikaika o ka mea.
I ka makahiki 1990, ua hoʻomākaukau ʻo Kriegesmann iā RSiC me ka nui o 79.1% me ka hoʻohana ʻana i ka hoʻolei ʻana i ka paheʻe ma 2200°C, me ka ʻāpana kea e hōʻike ana i kahi microstructure i haku ʻia me nā ʻano palaoa a me nā pores. Ma hope mai, ua hoʻohana ʻo Yi et al. i ka hoʻolei ʻana i ka gel e hoʻomākaukau i nā kino ʻōmaʻomaʻo a hoʻopaʻa ʻia iā lākou ma 2450°C, e loaʻa ana nā keramika RSiC me ka nui o 2.53 g/cm³ a me ka ikaika flexural o 55.4 MPa.
ʻO ka ʻili haki SEM o RSiC
Ke hoʻohālikelike ʻia me ka SiC paʻa, ʻoi aku ka haʻahaʻa o ka density o RSiC (ma kahi o 2.5 g/cm³) a ma kahi o 20% open porosity, e kaupalena ana i kāna hana ma nā noi ikaika kiʻekiʻe. No laila, ua lilo ka hoʻomaikaʻi ʻana i ka density a me nā waiwai mechanical o RSiC i mea nui i ka noiʻi. Ua hāpai ʻo Sung et al. i ka hoʻokomo ʻana i ka silicon heheʻe i loko o nā compacts carbon/β-SiC i hui ʻia a me ka recrystallizing ma 2200°C, e kūkulu pono ana i kahi ʻano pūnaewele i haku ʻia me nā hua coarse α-SiC. ʻO ka hopena o RSiC i loaʻa kahi density o 2.7 g/cm³ a me ka ikaika flexural o 134 MPa, e mālama ana i ka paʻa mechanical maikaʻi loa i nā mahana kiʻekiʻe.
No ka hoʻonui hou ʻana i ka density, ua hoʻohana ʻo Guo et al. i ka ʻenehana polymer infiltration a me pyrolysis (PIP) no nā mālama he nui o RSiC. Ma ka hoʻohana ʻana i nā hopena PCS/xylene a me nā slurries SiC/PCS/xylene ma ke ʻano he infiltrants, ma hope o 3-6 mau pōʻaiapuni PIP, ua hoʻomaikaʻi nui ʻia ka density o RSiC (a hiki i ka 2.90 g/cm³), me kona ikaika flexural. Eia kekahi, ua hāpai lākou i kahi hoʻolālā cyclic e hoʻohui ana i ka PIP a me ka recrystallization: pyrolysis ma 1400°C a ukali ʻia e ka recrystallization ma 2400°C, e hoʻomaʻemaʻe pono ana i nā blockages particle a me ka hōʻemi ʻana i ka porosity. Ua hoʻokō ka mea RSiC hope loa i ka density o 2.99 g/cm³ a me ka ikaika flexural o 162.3 MPa, e hōʻike ana i ka hana piha maikaʻi loa.
Nā kiʻi SEM o ka ulu ʻana o ka microstructure o RSiC i wili ʻia ma hope o ka impregnation polymer a me nā pōʻaiapuni pyrolysis (PIP)-recrystallization: RSiC mua (A), ma hope o ka pōʻaiapuni PIP-recrystallization mua (B), a ma hope o ke kolu o ka pōʻaiapuni (C)
II. Sintering me ke kaomi ʻole
Hoʻomākaukau pinepine ʻia nā keramika silicon carbide (SiC) me ka hoʻohana ʻana i ka pauka SiC kiʻekiʻe a maikaʻi loa ma ke ʻano he mea maka, me nā liʻiliʻi o nā mea kōkua sintering i hoʻohui ʻia, a sintered i loko o kahi lewa inert a i ʻole vacuum ma 1800–2150°C. He kūpono kēia ʻano hana no ka hana ʻana i nā ʻāpana keramika nui a paʻakikī. Eia nō naʻe, ʻoiai ua hoʻopaʻa ʻia ʻo SiC me ka covalently, he haʻahaʻa loa kona coefficient diffusion ponoʻī, e paʻakikī ai ka densification me ka ʻole o nā mea kōkua sintering.
Ma muli o ke ʻano hana sintering, hiki ke hoʻokaʻawale ʻia ka sintering pressureless i ʻelua mau māhele: pressureless liquid-phase sintering (PLS-SiC) a me ka pressureless solid-state sintering (PSS-SiC).
1.1 PLS-SiC (Sintering Wai-Phase)
ʻO ka maʻamau, ua sintered ʻia ʻo PLS-SiC ma lalo o 2000°C ma ka hoʻohui ʻana ma kahi o 10 wt.% o nā mea kōkua sintering eutectic (e like me Al₂O₃, CaO, MgO, TiO₂, a me nā oxides honua kakaikahi RE₂O₃) e hana i kahi pae wai, e paipai ana i ka hoʻonohonoho hou ʻana o nā ʻāpana a me ka hoʻoili nuipa e hoʻokō ai i ka densification. He kūpono kēia kaʻina hana no nā keramika SiC ʻoihana, akā ʻaʻohe hōʻike o ka SiC maʻemaʻe kiʻekiʻe i loaʻa ma o ka sintering pae wai.
1.2 PSS-SiC (Sintering Moku'āina Pa'a)
Hoʻokomo ka PSS-SiC i ka densification solid-state ma nā mahana ma luna o 2000°C me kahi o 1 wt.% o nā mea hoʻohui. Hilinaʻi nui kēia kaʻina hana i ka hoʻolaha ʻana o ka atomic a me ka hoʻonohonoho hou ʻana o nā hua i hoʻokele ʻia e nā mahana kiʻekiʻe e hōʻemi i ka ikehu o ka ʻili a hoʻokō i ka densification. ʻO ka ʻōnaehana BC (boron-carbon) kahi hui hoʻohui maʻamau, hiki ke hoʻohaʻahaʻa i ka ikehu palena hua a wehe i ka SiO₂ mai ka ʻili SiC. Eia nō naʻe, hoʻolauna pinepine nā mea hoʻohui BC kuʻuna i nā haumia koena, e hōʻemi ana i ka maʻemaʻe SiC.
Ma ka kaohi ʻana i ka ʻike hoʻohui (B 0.4 wt.%, C 1.8 wt.%) a me ka sintering ma 2150°C no 0.5 mau hola, ua loaʻa nā keramika SiC maʻemaʻe kiʻekiʻe me ka maʻemaʻe o 99.6 wt.% a me ka density pili o 98.4%. Ua hōʻike ka microstructure i nā hua kolamu (ʻoi aku kekahi ma mua o 450 µm ka lōʻihi), me nā pores liʻiliʻi ma nā palena hua a me nā ʻāpana graphite i loko o nā hua. Ua hōʻike nā keramika i ka ikaika flexural o 443 ± 27 MPa, kahi modulus elastic o 420 ± 1 GPa, a me kahi coefficient hoʻonui thermal o 3.84 × 10⁻⁶ K⁻¹ ma ka pae o ka mahana o ka lumi a hiki i 600°C, e hōʻike ana i ka hana holoʻokoʻa maikaʻi loa.
ʻAno liʻiliʻi o PSS-SiC: (A) kiʻi SEM ma hope o ka wili ʻana a me ke kālai ʻana o NaOH; (BD) nā kiʻi BSD ma hope o ka wili ʻana a me ke kālai ʻana
III. Sintering Kaomi Wela
ʻO ke kaomi wela (HP) sintering kahi ʻenehana densification e hoʻopili like ana i ka wela a me ke kaomi uniaxial i nā mea pauka ma lalo o nā kūlana wela a me ke kaomi kiʻekiʻe. Hoʻopale nui ke kaomi kiʻekiʻe i ka hoʻokumu ʻana o nā pore a kaupalena i ka ulu ʻana o ka palaoa, ʻoiai ke kau wela kiʻekiʻe e paipai i ka fusion palaoa a me ka hoʻokumu ʻana o nā ʻano paʻa, e hana ana i nā keramika SiC kiʻekiʻe a maʻemaʻe. Ma muli o ke ʻano kuhikuhi o ke kaomi ʻana, ʻo kēia kaʻina hana e hoʻoulu ai i ka anisotropy palaoa, e hoʻopilikia ana i nā waiwai mechanical a me ke komo ʻana.
He paʻakikī ke hoʻopaʻa ʻia nā keramika SiC maʻemaʻe me ka ʻole o nā mea hoʻohui, e koi ana i ka sintering ultrahigh-pressure. Ua hoʻomākaukau pono ʻo Nadeau et al. i ka SiC paʻa piha me ka ʻole o nā mea hoʻohui ma 2500°C a me 5000 MPa; Ua loaʻa iā Sun et al. nā mea nui β-SiC me ka paʻakikī Vickers a hiki i 41.5 GPa ma 25 GPa a me 1400°C. Ma ka hoʻohana ʻana i ke kaomi 4 GPa, ua hoʻomākaukau ʻia nā keramika SiC me nā densities pili o kahi o 98% a me 99%, ka paʻakikī o 35 GPa, a me ka modulus elastic o 450 GPa ma 1500°C a me 1900°C, kēlā me kēia. ʻO ka pauka SiC micron-sized sintering ma 5 GPa a me 1500°C i hua mai i nā keramika me ka paʻakikī o 31.3 GPa a me ka density pili o 98.4%.
ʻOiai ke hōʻike nei kēia mau hopena e hiki i ke kaomi kiʻekiʻe loa ke hoʻokō i ka densification additive-free, ʻo ka paʻakikī a me ke kumukūʻai kiʻekiʻe o nā lako e pono ai e kaupalena i nā noi ʻoihana. No laila, i ka hoʻomākaukau pono ʻana, hoʻohana pinepine ʻia nā trace additives a i ʻole ka granulation powder e hoʻonui i ka ikaika hoʻokele sintering.
Ma ka hoʻohui ʻana i ka 4 wt.% phenolic resin ma ke ʻano he mea hoʻohui a me ka sintering ma 2350°C a me 50 MPa, ua loaʻa nā keramika SiC me ka helu densification o 92% a me ka maʻemaʻe o 99.998%. Ma ka hoʻohana ʻana i nā nui hoʻohui haʻahaʻa (waikawa boric a me D-fructose) a me ka sintering ma 2050°C a me 40 MPa, ua hoʻomākaukau ʻia ka SiC maʻemaʻe kiʻekiʻe me ka density pili >99.5% a me ke koena B o 556 ppm wale nō. Ua hōʻike nā kiʻi SEM, i ka hoʻohālikelike ʻia me nā laʻana sintered pressureless, ʻoi aku ka liʻiliʻi o nā hua liʻiliʻi o nā laʻana i kaomi wela ʻia, ʻoi aku ka liʻiliʻi o nā pores, a ʻoi aku ka nui o ka density. ʻO ka ikaika flexural he 453.7 ± 44.9 MPa, a ua hiki ka modulus elastic i 444.3 ± 1.1 GPa.
Ma ka hoʻolōʻihi ʻana i ka manawa paʻa ma 1900°C, ua piʻi ka nui o ka palaoa mai 1.5 μm a i 1.8 μm, a ua hoʻomaikaʻi ʻia ka conductivity thermal mai 155 a i 167 W·m⁻¹·K⁻¹, me ka hoʻoikaika pū ʻana i ke kūpaʻa ʻana o ka plasma corrosion.
Ma lalo o nā kūlana o 1850°C a me 30 MPa, ʻo ke kaomi wela a me ke kaomi wikiwiki ʻana o ka pauka SiC granulated a annealed i hua mai i nā keramika β-SiC paʻa piha me ka ʻole o nā mea hoʻohui, me ka nui o 3.2 g/cm³ a me ka mahana sintering 150-200°C haʻahaʻa ma mua o nā kaʻina hana kuʻuna. Ua hōʻike nā keramika i ka paʻakikī o 2729 GPa, ka paʻakikī haki o 5.25-5.30 MPa·m^1/2, a me ke kūpaʻa kolo maikaʻi loa (nā helu kolo o 9.9 × 10⁻¹⁰ s⁻¹ a me 3.8 × 10⁻⁹ s⁻¹ ma 1400°C/1450°C a me 100 MPa).
(A) kiʻi SEM o ka ʻili i wili ʻia; (B) kiʻi SEM o ka ʻili haki; (C, D) kiʻi BSD o ka ʻili i wili ʻia
I ka noiʻi paʻi 3D no nā keramika piezoelectric, ʻo ka slurry keramika, ma ke ʻano he kumu nui e hoʻopilikia ana i ka hoʻokumu ʻana a me ka hana, ua lilo ia i mea nui i ka home a me ka honua. Hōʻike pinepine nā haʻawina o kēia manawa e pili ana nā palena e like me ka nui o ka ʻāpana pauka, ka mānoanoa o ka slurry, a me ka ʻike paʻa i ka maikaʻi o ka hoʻokumu ʻana a me nā waiwai piezoelectric o ka huahana hope loa.
Ua ʻike ʻia e ka noiʻi ʻana he ʻokoʻa koʻikoʻi nā slurries seramika i hoʻomākaukau ʻia me ka hoʻohana ʻana i nā pauka barium titanate micron-, submicron-, a me nano-sized i nā kaʻina hana stereolithography (e laʻa, LCD-SLA). I ka emi ʻana o ka nui o ka ʻāpana, piʻi nui ka viscosity slurry, me nā pauka nano-sized e hana ana i nā slurries me nā viscosities e hiki ana i nā piliona o mPa·s. ʻO nā slurries me nā pauka micron-sized he mea maʻalahi i ka delamination a me ka peeling i ka wā paʻi, ʻoiai ʻo nā pauka submicron a me nano-sized e hōʻike ana i ke ʻano hana paʻa. Ma hope o ka sintering wela kiʻekiʻe, ua loaʻa i nā laʻana seramika hopena kahi density o 5.44 g/cm³, kahi coefficient piezoelectric (d₃₃) o kahi o 200 pC/N, a me nā mea pohō haʻahaʻa, e hōʻike ana i nā waiwai pane electromechanical maikaʻi loa.
Eia kekahi, i nā kaʻina hana micro-stereolithography, ʻo ka hoʻoponopono ʻana i ka ʻike paʻa o nā slurries ʻano PZT (e laʻa, 75 wt.%) i hua mai i nā kino sintered me ka density o 7.35 g/cm³, e hoʻokō ana i kahi piezoelectric constant a hiki i ka 600 pC/N ma lalo o nā kahua uila poling. Ua hoʻomaikaʻi nui ka noiʻi ʻana ma ka micro-scale deformation compensation i ka pololei o ke ʻano, e hoʻonui ana i ka pololei geometric a hiki i ka 80%.
Ua hōʻike ʻia kekahi noiʻi ʻē aʻe ma nā keramika piezoelectric PMN-PT he mea koʻikoʻi ka ʻike paʻa i ke ʻano o ka keramika a me nā waiwai uila. Ma ka 80 wt.% o ka ʻike paʻa, ua maʻalahi ka ʻike ʻia ʻana o nā huahana ʻaoʻao i loko o nā keramika; i ka piʻi ʻana o ka ʻike paʻa i 82 wt.% a ʻoi aku, ua nalowale mālie nā huahana ʻaoʻao, a ua lilo ke ʻano keramika i mea maʻemaʻe, me ka hana i hoʻomaikaʻi nui ʻia. Ma ka 82 wt.%, ua hōʻike nā keramika i nā waiwai uila kūpono: kahi piezoelectric constant o 730 pC/N, permittivity pili o 7226, a me ka pohō dielectric o 0.07 wale nō.
I ka hōʻuluʻulu manaʻo, ʻo ka nui o nā ʻāpana, ka ʻike paʻa, a me nā waiwai rheological o nā slurries seramika ʻaʻole wale ka hoʻopili ʻana i ke kūpaʻa a me ka pololei o ke kaʻina paʻi akā e hoʻoholo pololei hoʻi i ka density a me ka piezoelectric response o nā kino sintered, e lilo ia i mau palena koʻikoʻi no ka hoʻokō ʻana i nā keramika piezoelectric i paʻi ʻia 3D kiʻekiʻe.
ʻO ke kaʻina hana nui o ka paʻi ʻana o ka LCD-SLA 3D o nā laʻana BT/UV
ʻO nā waiwai o nā keramika PMN-PT me nā ʻano paʻa like ʻole
IV. Hoʻoheheʻe Plasma Spark
ʻO ka Spark plasma sintering (SPS) kahi ʻenehana sintering holomua e hoʻohana ana i ke au pulsed a me ke kaomi mechanical i hoʻopili ʻia i nā pauka e hoʻokō i ka densification wikiwiki. Ma kēia kaʻina hana, hoʻomehana pololei ke au i ka ʻōmole a me ka pauka, e hoʻopuka ana i ka wela Joule a me ka plasma, e hiki ai ke sintering maikaʻi i ka manawa pōkole (maʻamau i loko o 10 mau minuke). Hoʻolaha ka hoʻomehana wikiwiki i ka diffusion ʻili, ʻoiai ke kōkua nei ka hoʻokuʻu ʻana o ka spark i ka wehe ʻana i nā kinoea adsorbed a me nā papa oxide mai nā ʻili pauka, e hoʻomaikaʻi ana i ka hana sintering. Hoʻonui pū ka hopena electromigration i hoʻokumu ʻia e nā kahua electromagnetic i ka diffusion atomic.
Ke hoʻohālikelike ʻia me ke kaomi wela kuʻuna, hoʻohana ʻo SPS i ka hoʻomehana pololei, e hiki ai ke hoʻopaʻa ʻia ma nā mahana haʻahaʻa me ka pale pono ʻana i ka ulu ʻana o ka palaoa e loaʻa ai nā microstructures maikaʻi a like. Eia kekahi laʻana:
- Me ka ʻole o nā mea hoʻohui, me ka hoʻohana ʻana i ka pauka SiC lepo ma ke ʻano he mea maka, ʻo ka sintering ma 2100°C a me 70 MPa no 30 mau minuke i hua mai i nā laʻana me 98% ka nui pili.
- ʻO ka sintering ma 1700°C a me 40 MPa no 10 mau minuke i hua mai i ka cubic SiC me ka 98% density a me ka nui o nā palaoa he 30-50 nm wale nō.
- ʻO ka hoʻohana ʻana i ka pauka SiC granular 80 µm a me ka sintering ma 1860°C a me 50 MPa no 5 mau minuke ua hopena i nā keramika SiC hana kiʻekiʻe me 98.5% relative density, Vickers microhardness o 28.5 GPa, flexural strength o 395 MPa, a me ka fracture toughness o 4.5 MPa·m^1/2.
Ua hōʻike ʻia ka loiloi microstructural i ka piʻi ʻana o ka mahana sintering mai 1600°C a i 1860°C, ua emi nui ka porosity o ka mea, e hoʻokokoke ana i ka density piha i nā mahana kiʻekiʻe.
ʻO ke ʻano liʻiliʻi o nā keramika SiC i sintered ʻia ma nā mahana like ʻole: (A) 1600°C, (B) 1700°C, (C) 1790°C a me (D) 1860°C
V. Hana Hana Hoʻohui
Ua hōʻike koke nei ka hana hana hoʻohui (AM) i ka hiki ke hana i nā ʻāpana keramika paʻakikī ma muli o kāna kaʻina hana kūkulu papa-ma-papa. No nā keramika SiC, ua hoʻomohala ʻia nā ʻenehana AM he nui, me ka binder jetting (BJ), 3DP, selective laser sintering (SLS), direct ink writing (DIW), a me stereolithography (SL, DLP). Eia nō naʻe, ʻoi aku ka haʻahaʻa o ka pololei o 3DP a me DIW, ʻoiai ʻo SLS ke kumu o ka hoʻoulu ʻana i ke kaumaha wela a me nā māwae. I ka hoʻohālikelike ʻana, hāʻawi ʻo BJ a me SL i nā pono nui i ka hana ʻana i nā keramika paʻakikī kiʻekiʻe, kiʻekiʻe.
- Ka Hoʻokuʻu ʻana i ka Mea Hoʻopaʻa (BJ)
ʻO ka ʻenehana BJ e pili ana i ka pīpī ʻana o ka mea hoʻopaʻa i ka pauka hoʻopaʻa, a ukali ʻia e ka debinding a me ka sintering e loaʻa ai ka huahana seramika hope loa. ʻO ka hui pū ʻana me BJ me ka infiltration vapor chemical (CVI), ua hoʻomākaukau pono ʻia nā seramika SiC crystalline kiʻekiʻe-maʻemaʻe. Aia i loko o ke kaʻina hana:
① Ke hana ʻana i nā kino ʻōmaʻomaʻo seramika SiC me ka hoʻohana ʻana iā BJ.
② Hoʻopaʻa ʻia ma o CVI ma 1000°C a me 200 Torr.
③ ʻO ka nui o ka seramika SiC hope loa he 2.95 g/cm³, ʻo ka conductivity thermal he 37 W/m·K, a ʻo ka ikaika flexural he 297 MPa.
Kiʻikuhi kiʻikuhi o ka paʻi ʻana o ka jet adhesive (BJ). (A) Kumu hoʻohālike hoʻolālā kōkua kamepiula (CAD), (B) kiʻikuhi kiʻikuhi o ke kumumanaʻo BJ, (C) paʻi ʻana o SiC e BJ, (D) densification o SiC e ka infiltration vapor chemical (CVI)
- Ka Hoʻololi ʻana i ke Kiʻi (SL)
He ʻenehana hana keramika ʻo SL e hoʻōla ana i ka UV me ka pololei kiʻekiʻe loa a me nā hiki ke hana ʻana i nā ʻano paʻakikī. Hoʻohana kēia ʻano hana i nā slurries keramika photosensitive me ka ʻike paʻa kiʻekiʻe a me ka viscosity haʻahaʻa e hana i nā kino ʻōmaʻomaʻo keramika 3D ma o ka photopolymerization, a ukali ʻia e ka debinding a me ka sintering wela kiʻekiʻe e loaʻa ai ka huahana hope loa.
Me ka hoʻohana ʻana i kahi slurry 35 vol.% SiC, ua hoʻomākaukau ʻia nā kino ʻōmaʻomaʻo 3D kiʻekiʻe ma lalo o ka hoʻomālamalama UV 405 nm a ua hoʻonui hou ʻia ma o ka puhi ʻana o ka polymer ma 800°C a me ka mālama ʻana o PIP. Ua hōʻike nā hopena ua loaʻa i nā laʻana i hoʻomākaukau ʻia me ka slurry 35 vol.% kahi density pili o 84.8%, e ʻoi aku ana ma mua o 30% a me 40% mau hui kaohi.
Ma ka hoʻokomo ʻana i ka lipophilic SiO₂ a me ka phenolic epoxy resin (PEA) e hoʻololi i ka slurry, ua hoʻomaikaʻi maikaʻi ʻia ka hana photopolymerization. Ma hope o ka sintering ma 1600°C no 4 h, ua hoʻokō ʻia ka hoʻololi kokoke i ka SiC, me ka ʻike oxygen hope loa o 0.12% wale nō, e hiki ai ke hana hoʻokahi-ʻanuʻu o nā keramika SiC kiʻekiʻe-maʻemaʻe, paʻakikī me ka ʻole o nā ʻanuʻu pre-oxidation a i ʻole pre-infiltration.
Kiʻi o ke ʻano paʻi a me kāna kaʻina hana sintering. ʻO ke ʻano o ka hāpana ma hope o ka maloʻo ʻana ma (A) 25°C, pyrolysis ma (B) 1000°C, a me ka sintering ma (C) 1600°C.
Ma ka hoʻolālā ʻana i nā slurries keramika Si₃N₄ photosensitive no ka paʻi stereolithography 3D a me ka hoʻohana ʻana i nā kaʻina hana debinding-presintering a me ka ʻelemakule wela kiʻekiʻe, ua hoʻomākaukau ʻia nā keramika Si₃N₄ me 93.3% theoretical density, tensile strength o 279.8 MPa, a me ka flexural strength o 308.5–333.2 MPa. Ua ʻike ʻia nā haʻawina ma lalo o nā kūlana o 45 vol.% solid content a me 10 s exposure time, hiki ke loaʻa nā kino ʻōmaʻomaʻo hoʻokahi papa me ka IT77-level curing precision. Ua kōkua kahi kaʻina hana debinding haʻahaʻa wela me ka wikiwiki hoʻomehana o 0.1 °C/min i ka hana ʻana i nā kino ʻōmaʻomaʻo ʻaʻohe māwae.
ʻO ka sintering kahi hana koʻikoʻi e hoʻopilikia ana i ka hana hope loa i ka stereolithography. Hōʻike ka noiʻi e hiki i ka hoʻohui ʻana i nā mea kōkua sintering ke hoʻomaikaʻi maikaʻi i ka nui o ka seramika a me nā waiwai mechanical. Ma ka hoʻohana ʻana iā CeO₂ ma ke ʻano he mea kōkua sintering a me ka ʻenehana sintering i kōkua ʻia e ke kahua uila e hoʻomākaukau i nā seramika Si₃N₄ kiʻekiʻe, ua ʻike ʻia ʻo CeO₂ e hoʻokaʻawale ma nā palena o ka palaoa, e paipai ana i ka paheʻe ʻana o ka palena o ka palaoa a me ka densification. Ua hōʻike nā seramika hopena i ka paʻakikī Vickers o HV10/10 (1347.9 ± 2.4) a me ka paʻakikī haki o (6.57 ± 0.07) MPa·m¹/². Me MgO–Y₂O₃ ma ke ʻano he mau mea hoʻohui, ua hoʻomaikaʻi ʻia ka homogeneity microstructure seramika, e hoʻonui nui ana i ka hana. Ma ka pae doping holoʻokoʻa o 8 wt.%, ua hiki ka ikaika flexural a me ka conductivity thermal i 915.54 MPa a me 59.58 W·m⁻¹·K⁻¹, kēlā me kēia.
VI. Hopena
I ka hōʻuluʻulu manaʻo, ua hōʻike nā keramika silicon carbide (SiC) kiʻekiʻe-maʻemaʻe, ma ke ʻano he mea keramika ʻenekinia koʻikoʻi, i nā manaʻolana noi ākea i nā semiconductors, aerospace, a me nā lako hana kūlana koʻikoʻi. Ua kālailai pono kēia pepa i ʻelima mau ala hoʻomākaukau maʻamau no nā keramika SiC kiʻekiʻe-recrystallization sintering, pressureless sintering, hot pressing, spark plasma sintering, a me ka hana additive-me nā kūkākūkā kikoʻī e pili ana i kā lākou mau ʻano hana densification, ka hoʻonui ʻana i nā palena koʻikoʻi, ka hana o nā mea, a me nā pono a me nā palena.
Ua maopopo he ʻano kūikawā ko kēlā me kēia kaʻina hana e pili ana i ka hoʻokō ʻana i ka maʻemaʻe kiʻekiʻe, ka nui o ka paʻa, nā ʻano paʻakikī, a me ka hiki ke hana ʻia ma ka ʻoihana. Ua hōʻike ka ʻenehana hana hoʻohui, ma ke ʻano kūikawā, i ka hiki ke hana i nā ʻāpana paʻakikī a me nā ʻāpana i hana ʻia, me nā holomua i nā kahua liʻiliʻi e like me ka stereolithography a me ka binder jetting, e lilo ia i kuhikuhi hoʻomohala koʻikoʻi no ka hoʻomākaukau ʻana i ka seramika SiC maʻemaʻe kiʻekiʻe.
Pono e luʻu hohonu i nā noiʻi e hiki mai ana ma ka hoʻomākaukau ʻana i ka seramika SiC maʻemaʻe kiʻekiʻe, e paipai ana i ka hoʻololi ʻana mai ka pā hale hoʻokolohua i nā noi ʻenekinia nui a hilinaʻi loa, no laila e hāʻawi ana i ke kākoʻo mea koʻikoʻi no ka hana ʻana i nā lako hana kiʻekiʻe a me nā ʻenehana ʻike hanauna hou.
He ʻoihana ʻenehana kiʻekiʻe ʻo XKH e loea ana i ka noiʻi a me ka hana ʻana i nā mea keramika hana kiʻekiʻe. Ua hoʻolaʻa ʻia no ka hāʻawi ʻana i nā hoʻonā i hoʻopilikino ʻia no nā mea kūʻai aku ma ke ʻano o nā keramika silicon carbide (SiC) maʻemaʻe kiʻekiʻe. Loaʻa i ka ʻoihana nā ʻenehana hoʻomākaukau mea holomua a me nā hiki ke hana pololei. Hoʻopuni kāna ʻoihana i ka noiʻi, hana ʻana, hana pololei, a me ka mālama ʻana i ka ʻili o nā keramika SiC maʻemaʻe kiʻekiʻe, e hoʻokō ana i nā koi koʻikoʻi o ka semiconductor, ka ikehu hou, ka aerospace a me nā kahua ʻē aʻe no nā ʻāpana keramika hana kiʻekiʻe. Ma ka hoʻohana ʻana i nā kaʻina hana sintering makua a me nā ʻenehana hana hoʻohui, hiki iā mākou ke hāʻawi i nā mea kūʻai aku i kahi lawelawe hoʻokahi mai ka hoʻonui ʻana i ka formula mea, ka hoʻokumu ʻana i ka hoʻonohonoho paʻakikī a hiki i ka hana pololei, e hōʻoia ana i loaʻa i nā huahana nā waiwai mechanical maikaʻi loa, ke kūpaʻa wela a me ke kūpaʻa ʻana i ka corrosion.
Ka manawa hoʻouna: Iulai-30-2025