Ua māhele ʻia ke ʻano substrate silicon carbide i ke ʻano semi-insulating a me ke ʻano conductive. I kēia manawa, ʻo ke kikoʻī nui o nā huahana substrate silicon carbide semi-insulated he 4 ʻīniha. Ma ka mākeke silicon carbide conductive, ʻo ke kikoʻī nui o ka huahana substrate o kēia manawa he 6 ʻīniha.
Ma muli o nā noi ma lalo i ke kahua RF, ua kau ʻia nā substrates SiC semi-insulated a me nā mea epitaxial i ka mana hoʻokuʻu aku e ka US Department of Commerce. ʻO ka SiC Semi-insulated ma ke ʻano he substrate ka mea makemake ʻia no GaN heteroepitaxy a he mau manaʻolana koʻikoʻi no ka noi ʻana ma ke kahua microwave. Ke hoʻohālikelike ʻia me ka mismatch kristal o ka sapphire 14% a me Si 16.9%, ʻo ka mismatch kristal o nā mea SiC a me GaN he 3.4% wale nō. I hui pū ʻia me ka conductivity thermal ultra-kiʻekiʻe o SiC, ʻO ka LED ikehu kiʻekiʻe a me nā mea microwave kiʻekiʻe alapine a me ka mana kiʻekiʻe i hoʻomākaukau ʻia e ia he mau pono nui i ka radar, nā lako microwave mana kiʻekiʻe a me nā ʻōnaehana kamaʻilio 5G.
ʻO ka noiʻi a me ka hoʻomohala ʻana o ka substrate SiC semi-insulated ka mea nui o ka noiʻi a me ka hoʻomohala ʻana o ka substrate kristal hoʻokahi SiC. ʻElua mau pilikia nui i ka ulu ʻana i nā mea SiC semi-insulated:
1) E hōʻemi i nā mea haumia N i hoʻolauna ʻia e ka ipu hoʻoheheʻe graphite, ka adsorption insulation thermal a me ka doping i ka pauka;
2) ʻOiai e hōʻoiaʻiʻo ana i ka maikaʻi a me nā waiwai uila o ke kristal, ua hoʻokomo ʻia kahi kikowaena pae hohonu e uku i nā haumia pae pāpaʻu i koe me ka hana uila.
I kēia manawa, ʻo nā mea hana me ka mana hana SiC semi-insulated ʻo SICC Co, Semisic Crystal Co, Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Hoʻokō ʻia ke kristal SiC alakaʻi ma o ka hoʻokomo ʻana i ka naikokene i loko o ka lewa ulu. Hoʻohana nui ʻia ka substrate silicon carbide conductive i ka hana ʻana i nā mea mana, nā mea mana silicon carbide me ke kiʻekiʻe o ke ana, ke au kiʻekiʻe, ka mahana kiʻekiʻe, ke alapine kiʻekiʻe, ka pohō haʻahaʻa a me nā pono kūikawā ʻē aʻe, e hoʻomaikaʻi nui i ka hoʻohana ʻana o nā mea mana e pili ana i ka silicon i ka hoʻololi ʻana i ka ikehu, he hopena koʻikoʻi a ākea hoʻi i ke kahua o ka hoʻololi ikehu kūpono. ʻO nā wahi noi nui he mau kaʻa uila / nā paila hoʻouka, ka ikehu hou photovoltaic, ka transit rail, ka grid akamai a pēlā aku. No ka mea, ʻo ka hopena o nā huahana conductive he mau mea mana i nā kaʻa uila, photovoltaic a me nā kahua ʻē aʻe, ʻoi aku ka laulā o ka manaʻolana noi, a ʻoi aku ka nui o nā mea hana.
ʻAno kristal silicon carbide: Hiki ke hoʻokaʻawale ʻia ke ʻano maʻamau o ka silicon carbide crystalline 4H maikaʻi loa i ʻelua mau māhele, ʻo kekahi ke ʻano kristal silicon carbide cubic o ke ʻano sphalerite, i ʻike ʻia ʻo 3C-SiC a i ʻole β-SiC, a ʻo kekahi ʻo ke ʻano hexagonal a daimana paha o ke ʻano wā nui, ʻo ia ka mea maʻamau o 6H-SiC, 4H-sic, 15R-SiC, etc., i ʻike ʻia ʻo α-SiC. Loaʻa i ka 3C-SiC ka pono o ke kū'ē kiʻekiʻe i nā mea hana. Eia nō naʻe, ʻo ke kūlike ʻole kiʻekiʻe ma waena o nā constants lattice Si a me SiC a me nā coefficients hoʻonui thermal hiki ke alakaʻi i ka nui o nā hemahema i ka papa epitaxial 3C-SiC. Loaʻa iā 4H-SiC ka hiki ke hana i nā MOSFET, no ka mea, ʻoi aku ka maikaʻi o kona ulu ʻana o ke kristal a me nā kaʻina hana ulu papa epitaxial, a ma ke ʻano o ka neʻe ʻana o ka electron, ʻoi aku ka kiʻekiʻe o 4H-SiC ma mua o 3C-SiC a me 6H-SiC, e hāʻawi ana i nā ʻano microwave maikaʻi no 4H-SiC MOSFET.
Inā he hewa, e holoi i ka hoʻokaʻaʻike
Ka manawa hoʻouna: Iulai-16-2024