Hoʻokaʻawale ʻia ka substrate silicon carbide i ke ʻano semi-insulating a me ke ʻano conductive. I kēia manawa, ʻo ka kikoʻī nui o nā huahana semi-insulated silicon carbide substrate he 4 iniha. I ka mākeke carbide silicon conductive, ʻo ka kikoʻī huahana substrate i kēia manawa he 6 iniha.
Ma muli o nā noi haʻahaʻa ma ke kahua RF, nā substrate SiC semi-insulated a me nā mea epitaxial e hoʻokele ʻia e ka US Department of Commerce. ʻO Semi-insulated SiC ma ke ʻano he substrate ka mea i makemake ʻia no GaN heteroepitaxy a loaʻa iā ia nā manaʻo noi nui i ka māla microwave. Ke hoʻohālikelike ʻia me ka like ʻole o ke aniani o ka sapphire 14% a me ka Si 16.9%, ʻo 3.4% wale nō ka like ʻole o ka kristal o nā mea SiC a me GaN. Hoʻohui pū ʻia me ka conductivity thermal ultra-kiʻekiʻe o SiC, ʻO ka LED a me ka GaN kiʻekiʻe kiʻekiʻe a me nā mīkini microwave mana kiʻekiʻe i hoʻomākaukau ʻia e ia i nā pono nui i ka radar, nā lako microwave mana kiʻekiʻe a me nā ʻōnaehana kamaʻilio 5G.
ʻO ka noiʻi a me ka hoʻomohala ʻana o ka substrate SiC semi-insulated ka mea nui o ka noiʻi a me ka hoʻomohala ʻana o ka substrate crystal single SiC. ʻElua mau pilikia nui i ka ulu ʻana i nā mea SiC semi-insulated:
1) E ho'ēmi i nā haumia hāʻawi N i hoʻokomo ʻia e ka graphite crucible, thermal insulation adsorption a me ka doping i ka pauka;
2) ʻOiai e hōʻoiaʻiʻo ana i ka maikaʻi a me nā waiwai uila o ke aniani, ua hoʻokomo ʻia kahi kikowaena pae hohonu e hoʻopaʻi i ke koena o ka lepo pāpaʻu me ka hana uila.
I kēia manawa, ʻo nā mea hana me ka mana hana semi-insulated SiC ka nui o SICC Co, Semisic Crystal Co, Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Loaʻa ʻia ka kristal SiC conductive ma ka hoʻokomo ʻana i ka nitrogen i loko o ka lewa ulu. Hoʻohana nui ʻia ʻo Conductive silicon carbide substrate i ka hana ʻana i nā mana mana, nā mea mana silicon carbide me ka volta kiʻekiʻe, ke kiʻekiʻe o kēia manawa, ke kiʻekiʻe kiʻekiʻe, ke kiʻekiʻe kiʻekiʻe, ka haʻahaʻa haʻahaʻa a me nā pono kūʻokoʻa ʻē aʻe, e hoʻomaikaʻi nui i ka hoʻohana ʻana i ka ikehu. ka hoʻololi 'ana i ka pono, he koʻikoʻi a lōʻihi ka hopena ma ke kahua o ka hoʻololi ikehu pono. ʻO nā wahi noi nui nā kaʻa uila / hoʻopiʻi ʻana i nā puʻu, photovoltaic hou ike, kaʻaahi transit, smart grid a pēlā aku. No ka mea ʻo ka lalo o nā huahana conductive ka nui o nā mana mana i nā kaʻa uila, photovoltaic a me nā māla ʻē aʻe, ʻoi aku ka laulā o ka noi, a ʻoi aku ka nui o nā mea hana.
ʻO ke ʻano kristal carbide silikon: ʻO ke ʻano maʻamau o ka 4H crystalline silicon carbide maikaʻi loa hiki ke hoʻokaʻawale ʻia i ʻelua mau ʻāpana, ʻo kekahi ka cubic silicon carbide crystal type o sphalerite structure, i kapa ʻia ʻo 3C-SiC a i ʻole β-SiC, a ʻo kekahi ʻo ka hexagonal. a i ʻole ke ʻano daimana o ka hanana wā nui, ʻo ia ka mea maʻamau o 6H-SiC, 4H-sic, 15R-SiC, etc., i hui pū ʻia me α-SiC. Loaʻa iā 3C-SiC ka maikaʻi o ka resistivity kiʻekiʻe i nā mea hana. Eia nō naʻe, ʻo ka mismatch kiʻekiʻe ma waena o Si a me SiC lattice mau a me ka thermal expansion coefficient hiki ke alakaʻi i ka nui o nā hemahema i ka papa epitaxial 3C-SiC. Loaʻa i ka 4H-SiC ka mana nui i ka hana ʻana i nā MOSFET, no ka mea, ʻoi aku ka maikaʻi o kāna ulu aniani a me nā kaʻina ulu epitaxial layer, a ma ke ʻano o ka neʻe electron, ʻoi aku ka kiʻekiʻe o 4H-SiC ma mua o 3C-SiC a me 6H-SiC, e hāʻawi ana i nā hiʻohiʻona microwave maikaʻi loa no 4H. - Nā MOSFET SiC.
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Ka manawa hoʻouna: Jul-16-2024