Ua ulu aʻe nā mea semiconductor ma o ʻekolu mau hanauna transformative:
Ua hoʻokumu ʻo 1st Gen (Si/Ge) i ke kumu o ka uila uila hou,
Ua haki ʻo 2nd Gen (GaAs/InP) ma o ka optoelectronic a me nā alapine kiʻekiʻe e hoʻoikaika i ka ʻike ʻike,
Hoʻoponopono ʻo 3rd Gen (SiC/GaN) i kēia manawa i ka ikehu a me nā pilikia o ke kaiapuni, hiki i ka neutrality carbon a me ka wā 6G.
Hōʻike kēia holomua i ka neʻe ʻana o ka paradigm mai ka versatility i ka loea i ka ʻepekema waiwai.
1. Nā Semiconductors Mua Mua: Silicon (Si) a me Germanium (Ge)
Moolelo Moolelo
I ka makahiki 1947, ua hana ʻo Bell Labs i ka germanium transistor, e hōʻailona ana i ka wanaʻao o ke au semiconductor. Ma nā makahiki 1950, ua hoʻololi mālie ke silika i ka germanium ma ke ʻano he kumu o nā kaapuni hoʻohui ʻia (ICs) ma muli o kāna papa ʻokikene paʻa (SiO₂) a me ka nui o nā mālama kūlohelohe.
Mea Pono
ⅠBandgap:
ʻO Germanium: 0.67eV (ʻokiʻoki bandgap, kūpono i ka leakage o kēia manawa, maikaʻi ʻole ka hana wela kiʻekiʻe).
Silikoni: 1.12eV (indirect bandgap, kūpono no ka logic circuit akā hiki ʻole ke hoʻokuʻu māmā).
Ⅱ、Nā pōmaikaʻi o ka Silicon:
Hoʻokumu maoli i kahi oxide kiʻekiʻe (SiO₂), hiki ke hana ʻia MOSFET.
ʻO ke kumu kūʻai haʻahaʻa a me ka honua-nui (~ 28% o ka crustal composition).
Ⅲ、Nā palena:
Haʻahaʻa electron neʻe (wale nō 1500 cm²/(V·s)), kaohi ana i ka hana alapine kiʻekiʻe.
ʻAʻole hiki ke hoʻomanawanui i ka volta / wela (ka mahana hana kiʻekiʻe. ~150°C).
Nā noi nui
Ⅰ、Nā Kaapuni Hoʻohui (ICs):
ʻO nā CPU, nā pahu hoʻomanaʻo (e laʻa, DRAM, NAND) ke hilinaʻi nei i ke silika no ka hoʻohui kiʻekiʻe.
Laʻana: ʻO Intel's 4004 (1971), ka microprocessor kalepa mua, hoʻohana i ka ʻenehana silicon 10μm.
Ⅱ、Nā lako mana:
ʻO nā thyristors mua a me nā MOSFET haʻahaʻa haʻahaʻa (e laʻa, nā lako mana PC) he kumu silika.
Nā Luʻi & Obsolescence
Ua hoʻopau ʻia ʻo Germanium ma muli o ka leakage a me ka paʻa ʻole o ka wela. Eia nō naʻe, ʻo nā palena o ke silika i nā optoelectronics a me nā noi mana kiʻekiʻe i hoʻoulu i ka hoʻomohala ʻana o nā semiconductors hope-gen.
2 Nā Semiconductors ʻElua: Gallium Arsenide (GaAs) a me Indium Phosphide (InP)
Ka Papa Hoʻomohala
I ka makahiki 1970-1980, ua hoʻokumu nā kahua e kū nei e like me ke kamaʻilio kelepona, nā ʻenehana fiber optical, a me ka ʻenehana satellite i kahi koi koi no nā mea optoelectronic kiʻekiʻe a maikaʻi. Ua alakaʻi kēia i ka holomua o nā semiconductors bandgap pololei e like me GaAs a me InP.
Mea Pono
Bandgap & Optoelectronic hana:
GaAs: 1.42eV (ka bandgap pololei, hiki i ka hoʻokuʻu ʻana i ka māmā - kūpono no nā lasers/LED).
InP: 1.34eV (ʻoi aku ka maikaʻi no nā noi hawewe lōʻihi, e laʻa, 1550nm kamaʻilio fiber-optic).
Electron Mobility:
Loaʻa ʻo GaAs i ka 8500 cm²/(V·s), ʻoi aku ma mua o ke silika (1500 cm²/(V·s)), e hana maikaʻi loa no ka hoʻoili ʻana i nā hōʻailona GHz.
Nā pōʻino
lʻOi aku ka paʻakikī o ka hana ʻana ma mua o ke silika; ʻOi aku ka nui o 10x o nā wafers GaAs.
lʻAʻohe ʻokikene maoli: ʻAʻole e like me ka SiO₂ o ka silikona, ʻaʻole i loaʻa nā ʻokikene paʻa ʻo GaAs/InP, ke keʻakeʻa nei i ka hana IC kiʻekiʻe.
Nā noi nui
lRF Hope-hopena:
Nā mea hoʻonui mana kelepona (PA), nā transceivers ukali (e laʻa, nā transistors HEMT hoʻokumu ʻia GaAs).
lOptoelectronics:
Laser diodes (CD/DVD drives), LEDs (ulaula/infrared), fiber-optic modules (InP lasers).
lNā Pūnaehana Solar Space:
Loaʻa nā pūnaewele GaAs i ka 30% maikaʻi (vs. ~ 20% no ke silika), koʻikoʻi no nā satelite.
lʻO ka ʻenehana ʻenehana
ʻO nā kumukūʻai kiʻekiʻe e hoʻopaʻa i ka GaAs/InP i nā noi kiʻekiʻe kiʻekiʻe, e pale ana iā lākou mai ka hoʻoneʻe ʻana i ka mana o ke silika i loko o nā ʻāpana loiloi.
Nā Semiconductors ʻEkolu (Wide-Bandgap Semiconductors): Silicon Carbide (SiC) a me Gallium Nitride (GaN)
Nā Keaukaha ʻenehana
Energy Revolution: ʻO nā kaʻa uila a me ka hoʻohui pū ʻana o ka ikehu hou e koi ana i nā ʻenehana mana ʻoi aku ka maikaʻi.
Pono nā alapine kiʻekiʻe: Pono nā kamaʻilio 5G a me nā ʻōnaehana radar i nā alapine kiʻekiʻe a me ka nui o ka mana.
Nā Kaiapuni Kūleʻa: Pono nā ʻenehana aerospace a me nā ʻenehana ʻenehana i nā mea hiki ke kū i ka mahana ma mua o 200°C.
Nā ʻano mea waiwai
Nā pono o ka Bandgap ākea:
lSiC: Bandgap o 3.26eV, hoʻohaʻahaʻa i ka ikaika o ke kahua uila he 10x ka nui o ke kilika, hiki ke kū i nā volta ma luna o 10kV.
lGaN: Bandgap o 3.4eV, ka neʻe electron o 2200 cm²/(V·s), ʻoi aku ka maikaʻi ma ka hana alapine kiʻekiʻe.
Hooponopono wela:
Hiki i ka conductivity thermal o SiC i ka 4.9 W/(cm·K), ʻekolu manawa ʻoi aku ka maikaʻi ma mua o ke silika, no laila kūpono ia no nā noi mana kiʻekiʻe.
Nā Luʻi Pilikino
SiC: Pono ka ulu lohi hoʻokahi-crystal i nā mahana ma luna o 2000°C, e hopena i nā hemahema wafer a me nā kumukūʻai kiʻekiʻe (he 20x ʻoi aku ka pipiʻi o ka wafer SiC 6-inch ma mua o ke silika).
GaN: Loaʻa i kahi substrate kūlohelohe, koi pinepine i ka heteroepitaxy ma ka sapphire, SiC, a i ʻole nā mea hoʻoheheʻe silika, e alakaʻi ana i nā pilikia like ʻole o ka lattice.
Nā noi nui
Mea uila uila:
ʻO nā mea hoʻohuli EV (e laʻa, hoʻohana ʻo Tesla Model 3 i nā MOSFET SiC, e hoʻomaikaʻi ana i ka pono ma 5-10%).
Nā kikowaena / nā mea hoʻopili wikiwiki (hiki i nā mea GaN ke hoʻopaʻa wikiwiki i ka 100W+ me ka hoʻemi ʻana i ka nui e 50%).
Nā mea hana RF:
5G base station power amplifier (GaN-on-SiC PAs kākoʻo i nā alapine mmWave).
ʻO ka radar koa (hāʻawi ʻo GaN i ka 5 × ka mana o GaAs).
Optoelectronics:
ʻO nā LED UV (nā mea AlGaN i hoʻohana ʻia i ka sterilization a me ka ʻike ʻana i ka maikaʻi o ka wai).
Ke kūlana ʻoihana a me ka nānā ʻana i ka wā e hiki mai ana
Ua lanakila ʻo SiC i ka mākeke mana kiʻekiʻe, me nā modules automotive-grade i ka hana nui, ʻoiai ke kū nei nā kumukūʻai i mea pale.
Ke hoʻonui wikiwiki nei ʻo GaN i nā mea uila uila (hoʻopiʻi wikiwiki) a me nā noi RF, ke neʻe nei i nā wafers 8 iniha.
ʻO nā mea e puka mai ana e like me ka gallium oxide (Ga₂O₃, bandgap 4.8eV) a me ke daimana (5.5eV) hiki ke hana i "hanauna ʻehā" o nā semiconductor, e koi ana i nā palena uila ma mua o 20kV.
Ka noho pū ʻana a me ka Synergy o nā Generation Semiconductor
Hoʻohui, ʻaʻole hoʻololi:
Noho mau ʻo Silicon i nā ʻāpana logic a me nā mea uila uila (95% o ka mākeke semiconductor honua).
ʻO GaAs a me InP kūikawā i nā niches kiʻekiʻe a me nā optoelectronic.
ʻAʻole hiki ke hoʻololi ʻia ʻo SiC/GaN i ka ikehu a me nā noi ʻoihana.
Nā Laʻana Hoʻohui ʻenehana:
GaN-on-Si: Hoʻohui i ka GaN me nā substrate silika haʻahaʻa no ka hoʻouka wikiwiki a me nā noi RF.
SiC-IGBT hybrid modules: E hoʻomaikaʻi i ka hoʻololi ʻana i ka grid.
Nā loina e hiki mai ana:
Hoʻohui Heterogeneous: Hoʻohui i nā mea (e laʻa, Si + GaN) ma kahi pahu hoʻokahi e kaulike i ka hana a me ke kumukūʻai.
Hiki i nā mea ʻākea ākea ākea (e laʻa, Ga₂O₃, daimana) hiki ke hiki ke hoʻohana i ka uila kiʻekiʻe-kiʻekiʻe (>20kV) a me nā noi computing quantum.
Hana pili
GaAs laser epitaxial wafer 4 iniha 6 iniha
12 'īniha SIC substrate silicon carbide papa nui anawaena 300mm nui nui 4H-N Kūpono no ka mea mana kiʻekiʻe ka hoʻoheheʻe wela.
Ka manawa hoʻouna: Mei-07-2025