1. Hoʻolauna
ʻOiai he mau makahiki o ka noiʻi ʻana, ʻaʻole i loaʻa i ka heteroepitaxial 3C-SiC i ulu ʻia ma nā substrates silicon ka maikaʻi o ke kristal kūpono no nā noi uila ʻoihana. Hana pinepine ʻia ka ulu ʻana ma nā substrates Si (100) a i ʻole Si (111), e hōʻike ana kēlā me kēia i nā pilikia like ʻole: nā kikowaena anti-phase no (100) a me ka haki ʻana no (111). ʻOiai ʻo nā kiʻiʻoniʻoni [111]-oriented e hōʻike ana i nā ʻano hoʻohiki e like me ka emi ʻana o ka hemahema, ka hoʻomaikaʻi ʻana i ke ʻano o ka ʻili, a me ke kaumaha haʻahaʻa, ʻaʻole i aʻo ʻia nā kuhikuhi ʻē aʻe e like me (110) a me (211). Hōʻike nā ʻikepili e kū nei he hiki i nā kūlana ulu kūpono ke kuhikuhi kikoʻī, e hoʻopilikia ana i ka noiʻi ʻōnaehana. ʻO ka mea nui, ʻaʻole i hōʻike ʻia ka hoʻohana ʻana i nā substrates Si kiʻekiʻe-Miller-index (eg, (311), (510)) no 3C-SiC heteroepitaxy, e waiho ana i kahi nui no ka noiʻi ʻimi ma nā ʻano ulu e pili ana i ka kuhikuhi.
2. Hoʻokolohua
Ua waiho ʻia nā papa 3C-SiC ma o ka waiho ʻana o ka mahu kemika ma ke kaomi lewa (CVD) me ka hoʻohana ʻana i nā kinoea mua SiH4/C3H8/H2. ʻO nā substrates he 1 cm² Si wafers me nā kuhikuhi like ʻole: (100), (111), (110), (211), (311), (331), (510), (553), a me (995). Aia nā substrates a pau ma ke axis koe wale nō (100), kahi i hoʻāʻo hou ʻia ai nā wafers ʻoki ʻole 2°. ʻO ka hoʻomaʻemaʻe mua ʻana o ka ulu ʻana e pili ana i ka ultrasonic degreasing i loko o ka methanol. ʻO ke kaʻina hana ulu ʻana, ua komo pū me ka wehe ʻana o ka oxide maoli ma o ka H2 annealing ma 1000°C, a ukali ʻia e kahi hana maʻamau ʻelua-ʻanuʻu: carburization no 10 mau minuke ma 1165°C me 12 sccm C3H8, a laila epitaxy no 60 mau minuke ma 1350°C (C/Si ratio = 4) me ka hoʻohana ʻana i 1.5 sccm SiH4 a me 2 sccm C3H8. ʻO kēlā me kēia holo ulu ʻana ua komo pū me ʻehā a ʻelima mau kuhikuhi Si like ʻole, me ka liʻiliʻi hoʻokahi (100) wafer kuhikuhi.
3. Nā Hualoaʻa a me ke Kūkākūkā ʻana
ʻO ke ʻano o nā papa 3C-SiC i ulu ʻia ma nā ʻano substrates Si like ʻole (Kiʻi 1) ua hōʻike i nā hiʻohiʻona ʻokoʻa o ka ʻili a me ka ʻoʻoleʻa. Ma ke ʻano ʻike, ua like nā laʻana i ulu ʻia ma Si(100), (211), (311), (553), a me (995) me ke aniani, aʻo nā mea ʻē aʻe mai ka waiū ((331), (510)) a i ka palalulu ((110), (111)). Ua loaʻa nā ʻili laumania loa (e hōʻike ana i ka microstructure maikaʻi loa) ma nā substrates (100)2° a me (995). ʻO ka mea kupanaha, ua noho nā papa āpau me ka ʻole o ka haki ma hope o ka hoʻomaʻalili ʻana, me ka 3C-SiC(111) maʻamau i ke kaumaha. ʻO ka nui o ka laʻana i kaupalena ʻia paha i pale i ka haki ʻana, ʻoiai ua hōʻike kekahi mau laʻana i ke kūlou ʻana (30-60 μm deflection mai ke kikowaena a i ka lihi) i ʻike ʻia ma lalo o ka microscopy optical ma 1000 × magnification ma muli o ke kaumaha wela i hōʻiliʻili ʻia. Ua hōʻike nā papa kūlou kiʻekiʻe i ulu ʻia ma nā substrates Si(111), (211), a me (553) i nā ʻano concave e hōʻike ana i ke kaumaha tensile, e koi ana i ka hana hoʻokolohua a me ka hana kumumanaʻo hou aʻe e pili me ka orientation crystallographic.
Hōʻuluʻulu manaʻo ʻo Kiʻi 1 i nā hopena XRD a me AFM (ke nānā ʻana ma 20 × 20 μ m2) o nā papa 3C-SC i ulu ʻia ma nā substrates Si me nā kuhikuhi like ʻole.
Ua hōʻoia nā kiʻi microscopy ikaika atomika (AFM) (Kiʻi 2) i nā nānā ʻana o ka optical. Ua hōʻoia nā waiwai root-mean-square (RMS) i nā ʻili maʻemaʻe loa ma nā substrates (100)2° a me (995), e hōʻike ana i nā ʻano like me ka palaoa me nā ana ʻaoʻao 400-800 nm. ʻO ka papa (110)-i ulu ʻia ka mea ʻino loa, ʻoiai nā hiʻohiʻona elongated a/a i ʻole like me nā palena ʻoi i kekahi manawa i ʻike ʻia ma nā kuhikuhi ʻē aʻe ((331), (510)). Ua hōʻike nā scans X-ray diffraction (XRD) θ-2θ (i hōʻuluʻulu ʻia ma ka Papa 1) i ka heteroepitaxy holomua no nā substrates haʻahaʻa-Miller-index, koe wale nō ʻo Si(110) i hōʻike i nā piko 3C-SiC(111) a me (110) i hui pū ʻia e hōʻike ana i ka polycrystallinity. Ua hōʻike mua ʻia kēia hui ʻana o ke kuhikuhi no Si(110), ʻoiai ua ʻike kekahi mau haʻawina i ka 3C-SiC (111)-oriented kūʻokoʻa, e hōʻike ana he mea koʻikoʻi ka hoʻonui ʻana i ke kūlana ulu. No nā ʻōkuhi Miller ≥5 ((510), (553), (995)), ʻaʻohe piko XRD i ʻike ʻia ma ke ʻano maʻamau θ-2θ ʻoiai ʻaʻole kēia mau mokulele index kiʻekiʻe e diffracting i kēia geometry. ʻO ka loaʻa ʻole o nā piko 3C-SiC index haʻahaʻa (e.g., (111), (200)) e hōʻike ana i ka ulu ʻana o ka crystalline hoʻokahi, e koi ana i ka tilting o ka laʻana e ʻike i ka diffraction mai nā mokulele index haʻahaʻa.
Hōʻike ka Kiʻi 2 i ka helu ʻana o ke kihi mokulele i loko o ke ʻano kristal CFC.
Ua hōʻike nā kihi crystallographic i helu ʻia ma waena o nā mokulele kiʻekiʻe-index a me nā mokulele haʻahaʻa-index (Papa 2) i nā kuhihewa nui (>10°), e wehewehe ana i ko lākou nele i nā scan θ-2θ maʻamau. No laila, ua hana ʻia ka nānā ʻana i ke kiʻi pole ma ka laʻana (995)-oriented ma muli o kona ʻano granular ʻokoʻa (hiki mai ka ulu ʻana o ke kolamu a i ʻole ka māhoe) a me ka haʻahaʻa haʻahaʻa. Ua aneane like nā kiʻi pole (111) (Kiʻi 3) mai ka substrate Si a me ka papa 3C-SiC, e hōʻoia ana i ka ulu ʻana o ka epitaxial me ka ʻole o ka māhoe. Ua ʻike ʻia ke kiko waena ma χ≈15°, e kūlike ana i ke kihi theoretical (111)-(995). ʻEkolu mau kiko symmetry-equivalent i ʻike ʻia ma nā kūlana i manaʻo ʻia (χ=56.2°/φ=269.4°, χ=79°/φ=146.7° a me 33.6°), ʻoiai he wahi nāwaliwali i wānana ʻole ʻia ma χ=62°/φ=93.3° e pono ai ka noiʻi hou aku. ʻIke ʻia he mea hoʻohiki ke ʻano o ka crystalline, i loiloi ʻia ma o ka laulā kiko ma nā φ-scans, ʻoiai pono nā ana ʻana o ka piʻo rocking no ka helu ʻana. Pono e hoʻopau ʻia nā helu pole no nā laʻana (510) a me (553) e hōʻoia i ko lākou ʻano epitaxial i manaʻo ʻia.
Hōʻike ka Kiʻi 3 i ka kiʻikuhi piko XRD i hoʻopaʻa ʻia ma ka laʻana i kuhikuhi ʻia (995), e hōʻike ana i nā mokulele (111) o ka substrate Si (a) a me ka papa 3C-SiC (b).
4. Hopena
Ua holomua ka ulu ʻana o ka Heteroepitaxial 3C-SiC ma ka hapa nui o nā kuhikuhi Si koe wale nō (110), kahi i loaʻa ai ka mea polycrystalline. ʻO Si(100)2° off a me (995) substrates i hana i nā papa laumania loa (RMS <1 nm), ʻoiai ʻo (111), (211), a me (553) i hōʻike i ke kūlou koʻikoʻi (30-60 μm). Pono nā substrates index kiʻekiʻe i ka wehewehe XRD holomua (e laʻa, nā kiʻi pole) e hōʻoia i ka epitaxy ma muli o ka nele o nā piko θ-2θ. ʻO ka hana e hoʻomau nei e pili ana i nā ana piʻo rocking, ka nānā ʻana i ke kaumaha Raman, a me ka hoʻonui ʻana i nā kuhikuhi index kiʻekiʻe hou aʻe e hoʻopau i kēia haʻawina noiʻi.
Ma ke ʻano he mea hana i hoʻohui ʻia i ka ʻaoʻao kū pololei, hāʻawi ʻo XKH i nā lawelawe hana hana maʻamau me kahi waihona piha o nā substrates silicon carbide, e hāʻawi ana i nā ʻano maʻamau a me nā ʻano kūikawā e pili ana i ka 4H/6H-N, 4H-Semi, 4H/6H-P, a me 3C-SiC, i loaʻa i nā diameters mai 2-'īniha a 12-'īniha. ʻO kā mākou ʻike loea mai ka hopena a i ka hopena i ka ulu ʻana o ke kristal, ka mīkini pololei, a me ka hōʻoia maikaʻi e hōʻoiaʻiʻo i nā hoʻonā i hana kūikawā ʻia no nā uila mana, RF, a me nā noi e kū mai ana.
Ka manawa hoʻouna: Aug-08-2025