1. Hoʻolauna
ʻOiai he mau ʻumi makahiki o ka noiʻi ʻana, ʻaʻole i loaʻa i ka heteroepitaxial 3C-SiC ma luna o nā substrate silika ka maikaʻi o ka kristal no nā noi uila ʻenehana. Hana ʻia ka ulu ʻana ma nā substrate Si(100) a i ʻole Si(111), e hōʻike ana kēlā me kēia i nā luʻi kūʻokoʻa: nā kikowaena anti-phase no (100) a me ka haki ʻana no (111). ʻOiai ke hōʻike nei nā kiʻi ʻoniʻoni [111]-oriented i nā hiʻohiʻona hoʻohiki e like me ka emi ʻana o ka defect density, ka hoʻomaikaʻi ʻana i ka morphology o ka ʻili, a me ka haʻahaʻa haʻahaʻa, ʻo nā ʻano ʻē aʻe e like me (110) a me (211) e hoʻomau ʻia. Hōʻike ka ʻikepili e kū nei i nā kūlana ulu maikaʻi loa e pili ana i ka orientation-specific, paʻakikī i ka hoʻokolokolo ʻōnaehana. ʻO ka mea nui, ʻaʻole i hōʻike ʻia ka hoʻohana ʻana i nā substrates kiʻekiʻe-Miller-index Si (eg, (311), (510)) no 3C-SiC heteroepitaxy, e waiho ana i kahi lumi nui no ka noiʻi ʻimi ʻana i nā hana ulu e pili ana i ka orientation.
2. Hoʻokolohua
Ua waiho ʻia nā papa 3C-SiC ma o ka atmospheric-pressure chemical vapor deposition (CVD) me ka hoʻohana ʻana i nā kinoea precursor SiH4/C3H8/H2. ʻO nā substrates he 1 cm² Si wafers me nā ʻano ʻano like ʻole: (100), (111), (110), (211), (311), (331), (510), (553), a me (995). Aia nā substrate a pau ma ka axis koe wale no (100), kahi i ho'āʻo hou ʻia ai nā wafers ʻoki ʻia 2°. ʻO ka hoʻomaʻemaʻe ma mua o ka ulu ʻana i pili i ka ultrasonic degreasing i ka methanol. ʻO ka protocol ulu ka wehe ʻana o ka oxide maoli ma o ka H2 annealing ma 1000 ° C, a ukali ʻia e kahi kaʻina hana ʻelua ʻanuʻu: carburization no 10 mau minuke ma 1165 ° C me 12 sccm C3H8, a laila epitaxy no 60 mau minuke ma 1350 ° C (C/Si ratio = 4) me ka hoʻohana ʻana i ka SiscH4 a me C8 sc. ʻO kēlā me kēia holo ulu ʻana he ʻehā a ʻelima mau ʻano ʻokoʻa Si, me ka liʻiliʻi loa (100) wafer kuhikuhi.
3. Nā hopena a me ke kūkākūkā
ʻO ka morphology o nā papa 3C-SiC i ulu ma luna o nā ʻāpana Si like ʻole (Fig. 1) i hōʻike i nā hiʻohiʻona ʻokoʻa o ka ʻili a me ka ʻino. ʻIke ʻia, ʻike ʻia nā laʻana i ulu ʻia ma Si(100), (211), (311), (553), a me (995) me he aniani lā, aʻo nā mea ʻē aʻe mai ka waiu ((331), (510)) a hiki i ka ʻulaʻula ((110), (111)). Ua loaʻa nā ʻili ʻoluʻolu loa (e hōʻike ana i ka microstructure maikaʻi loa) ma nā substrate (100)2° a me (995). ʻO ka mea kupaianaha, noho ʻole nā papa a pau ma hope o ka hoʻoluʻu ʻana, me ka 3C-SiC (111) maʻamau. ʻO ka liʻiliʻi liʻiliʻi liʻiliʻi i pale i ka haki ʻana, ʻoiai ua hōʻike ʻia kekahi mau laʻana i ke kūlou ʻana (30-60 μm deflection mai ke kikowaena a hiki i ke kihi) hiki ke ʻike ʻia ma lalo o ka microscopy optical ma 1000 × kiʻekiʻe ma muli o ke koʻikoʻi wela. Hōʻike ʻia nā ʻano concave e hōʻike ana i ke kāʻei tensile nā papa kūlou i ulu ʻia ma Si(111), (211), a me (553), e koi ana i nā hana hoʻokolohua hou aʻe e hoʻopili me ka hoʻonohonoho crystallographic.
Hōʻuluʻulu ka Figure 1 i nā hopena XRD a me AFM (scanning ma 20 × 20 μm2) o nā papa 3C-SC i ulu ma nā substrates Si me nā ʻano ʻokoʻa.
ʻO nā kiʻi microscopy atomika ikaika (AFM) (Fig. 2) i hoʻopaʻa ʻia i ka nānā ʻana. Ua hōʻoia ʻia nā waiwai kumu-mean-square (RMS) i nā ʻili ʻoluʻolu loa ma (100)2° a me (995) substrates, e hōʻike ana i nā hale e like me ka palaoa me nā ana ʻaoʻao 400-800 nm. ʻO ka papa (110) -grown ʻoi aku ka ʻoi loa, ʻoiai ʻo nā hiʻohiʻona elongated a/a i ʻole nā hiʻohiʻona like me nā palena ʻoi i kekahi manawa i ʻike ʻia ma nā ʻano ʻē aʻe ((331), (510)). X-ray diffraction (XRD) θ-2θ scans (i hōʻuluʻulu ʻia ma ka Papa 1) ua hōʻike ʻia ka heteroepitaxy kūleʻa no nā substrates haʻahaʻa-Miller-index, koe wale no Si (110) i hōʻike i ka hui ʻana o 3C-SiC (111) a me (110) nā piko e hōʻike ana i ka polycrystallinity. Ua hōʻike mua ʻia kēia hui ʻana no ka Si(110), ʻoiai ua ʻike ʻia kekahi mau haʻawina kūʻokoʻa (111) -oriented 3C-SiC, e ʻōlelo ana he mea koʻikoʻi ka ulu ʻana o ke kūlana. No nā helu Miller ≥5 ((510), (553), (995)), ʻaʻole i ʻike ʻia nā piko XRD ma ka hoʻonohonoho maʻamau θ-2θ no ka mea ʻaʻole ʻokoʻa kēia mau mokulele kiʻekiʻe i kēia geometry. ʻO ka loaʻa ʻole o nā piko 3C-SiC haʻahaʻa haʻahaʻa (eg, (111), (200)) e hōʻike ana i ka ulu ʻana o ka crystalline hoʻokahi, e koi ana i ka tilting laʻana e ʻike i ka ʻokoʻa mai nā mokulele haʻahaʻa.
Hōʻike ka Kiʻi 2 i ka helu ʻana o ka huina mokulele i loko o ka hale aniani CFC.
ʻO nā kihi crystallographic i helu ʻia ma waena o nā mokulele kiʻekiʻe-index a me nā mokulele haʻahaʻa (Table 2) i hōʻike i nā misorientations nui (>10°), e wehewehe ana i ko lākou nele i nā scans θ-2θ maʻamau. No laila ua mālama ʻia ka nānā ʻana i nā kiʻi pole ma ka (995)-oriented sample ma muli o kona ʻano morphology granular ʻē aʻe (mai ka ulu kolamu a i ʻole māhoe paha) a me ka haʻahaʻa haʻahaʻa. ʻO nā kiʻi (111) pole (Fig. 3) mai Si substrate a me 3C-SiC layer ua aneane like, e hōʻoia ana i ka ulu ʻana o ka epitaxial me ka ʻole o ka māhoe. Ua 'ike 'ia ke kiko waena ma χ≈15°, e pili ana i ka huina kumu (111)-(995). Ua ʻike ʻia ʻekolu mau kiko like me ka symmetry ma nā kūlana i manaʻo ʻia (χ=56.2°/φ=269.4°, χ=79°/φ=146.7° a me 33.6°), ʻoiai he wahi nāwaliwali i manaʻo ʻole ʻia ma χ=62°/φ=93.3° pono e noiʻi hou aku. ʻO ka maikaʻi o ka crystalline, i loiloi ʻia ma o ka laulā kiko ma φ-scans, ʻike ʻia he mea hoʻohiki, ʻoiai pono ke ana ʻana o ka ʻāwili ʻana no ka helu ʻana. E hoʻopau ʻia nā helu pole no (510) a me (553) e hōʻoia i ko lākou ʻano epitaxial i manaʻo ʻia.
Hōʻike ka Figure 3 i ke kiʻikuhi XRD peak i hoʻopaʻa ʻia ma ka (995) oriented sample, e hōʻike ana i nā (111) mokulele o ka substrate Si (a) a me ka papa 3C-SiC (b).
4. Ka hopena
Ua kūleʻa ka ulu ʻana o Heteroepitaxial 3C-SiC ma ka hapa nui o nā orientations Si koe wale nō (110), i hāʻawi mai i nā mea polycrystalline. ʻO Si(100)2° off a me (995) substrates i hana i nā papa ʻoi loa (RMS <1 nm), aʻo (111), (211), a me (553) hōʻike i ke kūlou nui (30-60 μm). Pono nā substrate-index kiʻekiʻe i ka hōʻike XRD kiʻekiʻe (e laʻa, nā kiʻi pole) e hōʻoia i ka epitaxy ma muli o ka haʻalele ʻana o nā piko θ-2θ. ʻO nā hana e hoʻomau nei e pili ana i nā ana ʻana o ka ʻāwili ʻana, ka nānā ʻana i ke koʻikoʻi Raman, a me ka hoʻonui ʻana i nā kuhikuhi kuhikuhi kiʻekiʻe e hoʻopau i kēia noiʻi ʻimi.
Ma keʻano he mea hana i hoʻohui ponoʻia, hāʻawiʻo XKH i nā lawelawe hana hoʻoponopono kūikawā me kahi kōpili piha o nā substrates silicon carbide, e hāʻawi ana i nāʻano maʻamau a me nāʻano kūikawā e like me 4H / 6H-N, 4H-Semi, 4H / 6H-P, a me 3C-SiC, i loaʻa i nā anawaena mai ka 2-inch a hiki i ka 12-inch. ʻO kā mākou ʻike hope-a-hope i ka ulu ʻana o ke aniani, ka mīkini pololei, a me ka hōʻoia ʻana i ka maikaʻi e hōʻoia i nā hoʻonā kūpono no ka uila uila, RF, a me nā noi e puka mai ana.
Ka manawa hoʻouna: ʻAukake-08-2025