ʻO ka hoʻomaka ʻana i ka carbide silika
ʻO Silicon carbide (SiC) kahi mea semiconductor pūhui i haku ʻia me ke kalapona a me ke silika, ʻo ia kekahi o nā mea kūpono no ka hana ʻana i ka wela kiʻekiʻe, ke alapine kiʻekiʻe, ka mana kiʻekiʻe a me nā mea uila kiʻekiʻe. Ke hoʻohālikelike ʻia me ka mea silikoni kuʻuna (Si), ʻo 3 mau manawa o ka ʻāpana hui o ka silicon carbide. ʻO ka conductivity thermal he 4-5 mau manawa o ke silika; ʻO 8-10 mau manawa ka haʻihaʻi haʻihaʻi o ke silika; ʻO ka helu uila saturation drift he 2-3 mau manawa o ke silika, e hoʻokō i nā pono o ka ʻoihana hou no ka mana kiʻekiʻe, ka uila kiʻekiʻe a me ke alapine kiʻekiʻe. Hoʻohana nuiʻia no ka hanaʻana i nā mea uila uila kiʻekiʻe, kiʻekiʻe-frequency, kiʻekiʻe a me ka māmā. Aia nā kahua noi i lalo i ka māka akamai, nā kaʻa ikehu hou, ka mana makani photovoltaic, kamaʻilio 5G, a pēlā aku. Ua hoʻohana ʻia nā diodes Silicon carbide a me MOSFET ma ke kālepa.
Kūleʻa wela kiʻekiʻe. ʻO ka laulā ākea o ka silicon carbide he 2-3 mau manawa o ka silika, ʻaʻole maʻalahi nā electrons i ka hoʻololi ʻana i nā mahana kiʻekiʻe, a hiki ke kū i nā mahana hana kiʻekiʻe, a ʻo ka conductivity thermal o ka silicon carbide he 4-5 mau manawa o ke silika, e maʻalahi ka hoʻokuʻu ʻana i ka wela a me ke kiʻekiʻe o ka wela o ka hana. Hiki i ke kū'ē wela kiʻekiʻe ke hoʻonui i ka nui o ka mana i ka wā e hōʻemi ana i nā koi ma ka ʻōnaehana hoʻomaha, e ʻoi aku ka māmā a me ka liʻiliʻi o ka terminal.
E kū i ke kaomi kiʻekiʻe. ʻO ka haʻihaʻi ʻana i ka ikaika o ke kahua uila o ka silicon carbide he 10 mau manawa o ka silika, hiki ke kū i nā volta kiʻekiʻe a ʻoi aku ka kūpono no nā mea uila kiʻekiʻe.
Kū'ē alapine kiʻekiʻe. ʻO ka silikoni carbide he saturated electron drift rate ʻelua ʻelua o ka silicon, ka hopena i ka nele o ka huelo o kēia manawa i ka wā o ka pani ʻana, hiki ke hoʻomaikaʻi maikaʻi i ka hoʻololi ʻana o ka hāmeʻa a ʻike i ka miniaturization o ka hāmeʻa.
Haʻahaʻa ikehu poho. Hoʻohālikelike ʻia me nā mea silika, ʻoi aku ka haʻahaʻa o ka carbide silicon ma luna o ke kūʻē a haʻahaʻa i ka nalowale. I ka manawa like, ʻo ke kiʻekiʻe band-gap ākea o ka silicon carbide e hōʻemi nui i ka leakage o kēia manawa a me ka nalowale o ka mana. Eia kekahi, ʻaʻohe ʻano kaʻina o ka carbide silicon i kēia manawa i ka wā o ka pani ʻana, a haʻahaʻa ka nalowale o ka hoʻololi.
Ke kaulahao ʻoihana silikoni
Hoʻopili nui ia i ka substrate, epitaxy, hoʻolālā mea hana, hana, hoʻopaʻa ʻana a pēlā aku. ʻO ka Silicon carbide mai ka mea a hiki i ka mana semiconductor e ʻike i ka ulu ʻana o ka kristal hoʻokahi, ka ʻokiʻoki ingot, ka ulu ʻana o ka epitaxial, ka hoʻolālā wafer, ka hana ʻana, ka ʻōpala a me nā kaʻina hana ʻē aʻe. Ma hope o ka synthesis o ka pauka silicon carbide, hana mua ʻia ka silicon carbide ingot, a laila loaʻa ka substrate silicon carbide ma ka ʻoki ʻana, ka wili a me ka polishing, a loaʻa ka epitaxial sheet e ka ulu epitaxial. Hana ʻia ka wafer epitaxial me ka silicon carbide ma o ka lithography, etching, implantation ion, metal passivation a me nā kaʻina hana ʻē aʻe, ʻoki ʻia ka wafer i loko o ka make, hoʻopili ʻia ka hāmeʻa, a hui ʻia ka mea i loko o kahi pūpū kūikawā a hui ʻia i loko o kahi module.
Ma luna o ke kaulahao ʻoihana 1: substrate - ʻo ka ulu ʻana o ke aniani ka loulou kaʻina kumu
ʻO ka substrate Silicon carbide e pili ana i ka 47% o ke kumukūʻai o nā mea hana silicon carbide, ka mea kiʻekiʻe o ka hana ʻenehana ʻenehana, ʻo ka waiwai nui loa, ʻo ia ke kumu o ka ʻoihana nui nui o SiC.
Mai ka hiʻohiʻona o nā ʻokoʻa o ka waiwai electrochemical, hiki ke hoʻokaʻawale ʻia nā mea substrate silicon carbide substrate i conductive substrates (resistivity māhele 15 ~ 30mΩ·cm) a me semi-insulated substrates (resistivity kiʻekiʻe ma mua o 105Ω·cm). Hoʻohana ʻia kēia mau ʻano substrate ʻelua no ka hana ʻana i nā mea ʻokoʻa e like me nā mana mana a me nā mea uila lekiō ma hope o ka ulu ʻana o ka epitaxial. I waena o lākou, hoʻohana nui ʻia ka semi-insulated silicon carbide substrate i ka hana ʻana i nā mea gallium nitride RF, nā mea photoelectric a pēlā aku. Ma ka ulu ʻana i ka papa epitaxial gan ma luna o ka substrate SIC semi-insulated, ua hoʻomākaukau ʻia ka pā epitaxial sic, hiki ke hoʻomākaukau hou ʻia i nā mea HEMT gan iso-nitride RF. Hoʻohana nui ʻia ka Conductive silicon carbide substrate i ka hana ʻana i nā mana mana. ʻOkoʻa mai ke kaʻina hana hana mana silicon maʻamau, ʻaʻole hiki ke hana pololei ʻia ka mea mana silicon carbide ma luna o ka substrate silicon carbide, pono e ulu ka papa silicon carbide epitaxial ma luna o ka substrate conductive e loaʻa ai ka pepa epitaxial silicon carbide, a ua hana ʻia ka papa epitaxial ma nā mana Schottky diode, MOSFET, MOSFET.
Ua hoʻohui ʻia ka pauka silicon carbide mai ka pauka kalapona maʻemaʻe kiʻekiʻe a me ka pauka silika maʻemaʻe kiʻekiʻe, a ua ulu ʻia nā nui like ʻole o ka silicon carbide ingot ma lalo o ke kahua wela kūikawā, a laila hana ʻia ka substrate silicon carbide ma o nā kaʻina hana he nui. Aia ke kaʻina hana nui:
Raw material synthesis: Hoʻohui ʻia ka pauka silika maʻemaʻe kiʻekiʻe + toner e like me ke ʻano, a lawe ʻia ka hopena i loko o ke keʻena pane ma lalo o ke kūlana wela kiʻekiʻe ma luna o 2000 ° C e synthesize i nā ʻāpana silicon carbide me ke ʻano aniani a me ka nui o ka nui. A laila ma o ka ʻoki ʻana, ka nānā ʻana, ka hoʻomaʻemaʻe a me nā kaʻina hana ʻē aʻe, e hoʻokō i nā koi o ka silicon carbide pauka maka.
ʻO ka ulu ʻana o ka kristal ke kaʻina kumu o ka hana ʻana o ka silicon carbide substrate, ka mea e hoʻoholo ai i nā waiwai uila o ka substrate silicon carbide. I kēia manawa, ʻo nā ʻano kumu nui no ka ulu ʻana o ke aniani ʻo ia ka hoʻoili kino kino (PVT), ke kiʻekiʻe kiʻekiʻe o ka wela chemical vapor deposition (HT-CVD) a me ka wai wai epitaxy (LPE). Ma waena o lākou, ʻo ke ʻano PVT ke ʻano kumu nui no ka ulu ʻana o ka ʻoihana ʻo SiC substrate i kēia manawa, me ka ʻenehana kiʻekiʻe kiʻekiʻe a hoʻohana nui ʻia i ka ʻenekinia.
He paʻakikī ka hoʻomākaukau ʻana o ka substrate SiC, e alakaʻi ana i kāna kumukūʻai kiʻekiʻe
He paʻakikī ka mālama ʻana i ka māla: ʻO ka ulu ʻana o ke koʻokoʻo ʻo SiC wale nō e pono ai ka 1500 ℃, ʻoiai ʻo SiC crystal rod pono e ulu i kahi kiʻekiʻe ma luna o 2000 ℃, a ʻoi aku ma mua o 250 SiC isomers, akā ʻo ka 4H-SiC hoʻokahi hale aniani no ka hana ʻana i nā mana mana, inā ʻaʻole ka mana pololei, e loaʻa i nā hale aniani ʻē aʻe. Eia kekahi, ʻo ka gradient mahana i loko o ka crucible e hoʻoholo i ka helu o ka hoʻololi ʻana o SiC sublimation a me ka hoʻonohonoho ʻana a me ke ʻano o ka ulu ʻana o ke kinoea atoms ma ke aniani aniani, e pili ana i ka nui o ka ulu ʻana o ka kristal a me ka maikaʻi aniani, no laila pono e hoʻokumu i kahi ʻenehana hoʻomalu kahua wela. Hoʻohālikelike ʻia me nā mea Si, ʻo ka ʻokoʻa o ka hana SiC aia nō hoʻi i nā kaʻina wela kiʻekiʻe e like me ke kiʻekiʻe kiʻekiʻe o ka ion implantation, kiʻekiʻe wela oxidation, kiʻekiʻe wela activation, a me ke kaʻina hana mask paʻakikī e koi ʻia e kēia mau kaʻina wela kiʻekiʻe.
ʻO ka ulu ʻana o ke aniani lohi: hiki i ka ulu ʻana o ke koʻokoʻo Si crystal ke hiki i 30 ~ 150mm / h, a ʻo ka hana ʻana o 1-3m silicon crystal rod e lawe wale i kahi lā 1; ʻO ke koʻokoʻo kristal SiC me ke ʻano PVT ma ke ʻano he laʻana, ʻo ka nui o ka ulu ʻana ma kahi o 0.2-0.4mm / h, 7 mau lā e ulu ai ma lalo o 3-6cm, ʻoi aku ka nui o ka ulu ʻana ma mua o 1% o ka mea silika, ka palena o ka hana.
ʻO nā palena huahana kiʻekiʻe a me ka haʻahaʻa haʻahaʻa: ʻo nā ʻāpana kumu o ka substrate SiC e pili ana i ka microtubule density, dislocation density, resistivity, warpage, surface roughness, etc. He mea ʻenehana ʻōnaehana paʻakikī e hoʻonohonoho i nā atoms i loko o kahi keʻena wela kiʻekiʻe i pani ʻia a me ka ulu kristal piha, ʻoiai ke hoʻomalu nei i nā kuhikuhi kuhikuhi.
He kiʻekiʻe ka paʻakikī, ka brittleness kiʻekiʻe, ka wā ʻoki lōʻihi a me ka lole kiʻekiʻe: ʻo SiC Mohs paʻakikī o 9.25 ka lua wale nō i ka daimana, e alakaʻi ana i ka piʻi nui o ka paʻakikī o ka ʻoki ʻana, ka wili ʻana a me ka polishing, a he 120 mau hola e ʻoki ai i nā ʻāpana 35-40 o kahi ingot mānoanoa 3cm. Eia kekahi, ma muli o ka brittleness kiʻekiʻe o SiC, e ʻoi aku ka nui o ka hoʻohana ʻana i ka wafer, a ʻo ka ratio hoʻopuka he 60% wale nō.
Ke au hoʻomohala: Hoʻonui ka nui + ka emi ʻana o ke kumukūʻai
Ke ulu nei ka mākeke SiC honua 6-inch volume production line, a ua komo nā hui alakaʻi i ka mākeke 8-inch. ʻO 6 iniha ka nui o nā papahana hoʻomohala kūloko. I kēia manawa, ʻoiai ʻo ka hapa nui o nā ʻoihana kūloko e hoʻokumu ʻia i nā laina hana 4-inch, akā ke hoʻonui mālie nei ka ʻoihana i ka 6-iniha, me ka oʻo ʻana o ka ʻenehana kākoʻo kākoʻo 6-ʻīniha, ʻo ka ʻenehana SiC substrate home ke hoʻomaikaʻi mālie nei i ka hoʻokele waiwai o ka nui o nā laina hana nui e ʻike ʻia, a ʻo ka 6-inch nui o ka manawa hana i kēia manawa ua haiki i 7 mau makahiki. ʻO ka nui o ka wafer nui hiki ke hoʻonui i ka helu o nā chips hoʻokahi, hoʻomaikaʻi i ka helu hua, a hoʻemi i ka nui o nā ʻāpana lihi, a e mālama ʻia ke kumukūʻai o ka noiʻi a me ka hoʻomohala ʻana a me ka lilo o ka hua ma kahi o 7%, e hoʻomaikaʻi ai i ka hoʻohana ʻana i ka wafer.
Nui nā pilikia i ka hoʻolālā ʻana i nā mea hana
Hoʻonui maikaʻi ʻia ka hoʻolaha ʻana o SiC diode, i kēia manawa, ua hoʻolālā kekahi mau mea hana hale i nā huahana SiC SBD, ʻoi aku ka maikaʻi o nā huahana SiC SBD a me nā kiʻekiʻe, i loko o ke kaʻa OBC, ka hoʻohana ʻana o SiC SBD + SI IGBT e hoʻokō i ka paʻa o kēia manawa. I kēia manawa, ʻaʻohe mea pale i ka hoʻolālā patent o nā huahana SiC SBD ma Kina, a he liʻiliʻi ke āpau me nā ʻāina ʻē.
He nui nā pilikia o SiC MOS, aia nō ka ʻokoʻa ma waena o SiC MOS a me nā mea hana ma waho, a ke kūkulu ʻia nei ke kahua hana kūpono. I kēia manawa, ua hoʻokō ʻo ST, Infineon, Rohm a me nā 600-1700V SiC MOS ʻē aʻe i ka hana nui a hoʻopaʻa inoa ʻia a hoʻouna ʻia me nā ʻoihana hana he nui, ʻoiai ua hoʻopau maoli ʻia ka hoʻolālā home SiC MOS i kēia manawa, ke hana nei kekahi mau mea hana hoʻolālā me nā fabs i ka pae kahe wafer, a ma hope o ka hōʻoia ʻana o ka mea kūʻai aku e pono ana ka manawa, no laila he lōʻihi ka manawa kūʻai aku.
I kēia manawa, ʻo ka hoʻolālā planar ke koho nui, a hoʻohana nui ʻia ke ʻano o ka auwaha i ka māla kiʻekiʻe i ka wā e hiki mai ana. He nui nā mea hana Planar SiC MOS, ʻaʻole maʻalahi ka hoʻolālā planar e hana i nā pilikia wāwahi kūloko i hoʻohālikelike ʻia me ka groove, e pili ana i ka paʻa o ka hana, ma ka mākeke ma lalo o 1200V he ākea ākea o ka waiwai noi, a ua maʻalahi ka hoʻolālā planar i ka hopena hana, e hoʻokō i ka manufacturability a me ka mālama kumu kūʻai ʻelua. Loaʻa i ka mīkini groove nā pōmaikaʻi o ka inductance parasitic haʻahaʻa haʻahaʻa, ka wikiwiki hoʻololi wikiwiki, haʻahaʻa haʻahaʻa a me ka hana kiʻekiʻe.
2--SiC wafer nūhou
ʻO ka ulu ʻana o ka mākeke Silicon carbide a me ka ulu ʻana o ke kūʻai aku, e hoʻolohe i ka ʻokoʻa ʻole ma waena o ka lako a me ka noi
Me ka wikiwiki o ka ulu ʻana o ka mākeke no nā uila uila kiʻekiʻe a me ka mana kiʻekiʻe, ua lilo ka bottleneck palena kino o nā mea semiconductor e pili ana i ka silicon, a ua lilo nā mea semiconductor ʻekolu o nā hanauna i hōʻike ʻia e ka silicon carbide (SiC). Mai ka hiʻohiʻona o ka manaʻo, ʻo ka silicon carbide he 3 mau manawa o ka laulā ākea o ka mea silikoni, 10 mau manawa i ka ikaika o ke kahua uila, 3 mau manawa o ka thermal conductivity, no laila ua kūpono nā mea mana silicon carbide no ke alapine kiʻekiʻe, ke kiʻekiʻe kiʻekiʻe, ke kiʻekiʻe kiʻekiʻe a me nā noi ʻē aʻe, e kōkua i ka hoʻomaikaʻi ʻana i ka pono a me ka mana o nā ʻōnaehana uila.
I kēia manawa, ua neʻe mālie ʻo SiC diodes a me SiC MOSFET i ka mākeke, a ua ʻoi aku ka nui o nā huahana oʻo, a ma waena o nā diodes SiC i hoʻohana nui ʻia ma kahi o nā diodes i hoʻokumu ʻia i ke kilika ma kekahi mau kula no ka mea ʻaʻole i loaʻa iā lākou ka pono o ka hoʻihoʻi hou ʻana; Hoʻohana lohi ʻia ʻo SiC MOSFET i ka automotive, ka mālama ʻana i ka ikehu, ka puʻu hoʻopiʻi, photovoltaic a me nā māla ʻē aʻe; Ma ke kahua o nā noi automotive, ke ulu nui nei ke ʻano o ka modularization, ʻo ka hana kiʻekiʻe o SiC pono e hilinaʻi i nā kaʻina hana hoʻopihapiha holomua e hoʻokō ai, ʻenehana me ka hoʻopaʻa ʻana i ka pūpū oʻo e like me ke kumu nui, ka wā e hiki mai ana a i ʻole ka hoʻomohala ʻana i ka sila.
ʻO ke kumukūʻai Silicon carbide ka emi ʻana o ka wikiwiki a i ʻole ma mua o ka noʻonoʻo
ʻO ka hoʻohana ʻana i nā mea hana silicon carbide i kaupalena ʻia e ke kumukūʻai kiʻekiʻe, ʻo ke kumukūʻai o SiC MOSFET ma lalo o ka pae hoʻokahi he 4 mau manawa kiʻekiʻe ma mua o ka IGBT i hoʻokumu ʻia ʻo Si, ʻo ia no ka mea paʻakikī ke kaʻina hana o ka silicon carbide, kahi ʻaʻole paʻakikī ka ulu ʻana o ka kristal hoʻokahi a me ka epitaxial i ke kaiapuni, akā ua lohi ka ulu ʻana, a pono ke kaʻina hana kristal hoʻokahi i ka ʻoki a me ka substrate. Ma muli o kāna mau hiʻohiʻona ponoʻī a me ka ʻenehana hoʻoheheʻe ʻana, ʻoi aku ka liʻiliʻi o ka substrate home ma mua o 50%, a me nā kumu like ʻole e alakaʻi i ka substrate kiʻekiʻe a me nā kumukūʻai epitaxial.
Eia nō naʻe, ʻo ke kumu kūʻai o nā mea hana silicon carbide a me nā mea pili i ka silicon he diametrically kūʻē, ʻo ka substrate a me nā kumukūʻai epitaxial o ke kahawai mua no 47% a me 23% o ka hāmeʻa holoʻokoʻa i kēlā me kēia, e pili ana i ka 70%, ka hoʻolālā ʻana, ka hana ʻana a me ka hoʻopaʻa ʻana i nā loulou o ke kahawai hope no ka 30% wale nō, ʻo ke kumu kūʻai o ka waʻa wai i hoʻopaʻa ʻia ma hope. 50%, a ʻo ke kumukūʻai substrate he 7% wale nō. ʻO ke ʻano o ka waiwai o ke kaulahao ʻoihana silicon carbide i luna i lalo, ʻo ia ka mea i loaʻa i nā mea hana epitaxy substrate ke kuleana nui e ʻōlelo, ʻo ia ke kī i ka hoʻonohonoho ʻana o nā ʻoihana kūloko a me nā ʻāina ʻē.
Mai ka manaʻo ikaika o ka mākeke, e hōʻemi ana i ke kumukūʻai o ka silika carbide, me ka hoʻomaikaʻi ʻana i ka silicon carbide lōʻihi kristal a me ke kaʻina hana slicing, ʻo ia ka hoʻonui ʻana i ka nui wafer, ʻo ia hoʻi ke ala oʻo o ka hoʻomohala semiconductor i ka wā i hala, hōʻike ʻo Wolfspeed i ka hoʻonui ʻana o ka silicon carbide substrate mai 6 iniha a 8 iniha- hiki ke hoʻonui i ka 9% hana a hiki ke hoʻonui i ka 9% hana. hua mai. Hiki ke hōʻemi i ke kumukūʻai hui hui ma 50%.
ʻIke ʻia ʻo 2023 ʻo "8-inch SiC makahiki mua", i kēia makahiki, ke hoʻolalelale nei nā mea hana silicon carbide kūloko a me nā ʻāina ʻē i ka hoʻolālā ʻana o 8-inch silicon carbide, e like me Wolfspeed hoʻopukapuka kālā o 14.55 biliona US kālā no ka hoʻonui ʻana i ka hana silicon carbide, kahi ʻāpana koʻikoʻi o ke kūkulu ʻana i ka 8-inch SiC substrate ka lako mea kanu o 20 mm e hiki mai ana. Ua hoʻopaʻa inoa pū ʻo Tianyue Advanced a me Tianke Heda i nā ʻaelike lōʻihi me Infineon e hoʻolako i nā substrates silicon carbide 8-inch i ka wā e hiki mai ana.
E hoʻomaka ana mai kēia makahiki, e piʻi ka silika carbide mai 6 iniha a 8 iniha, manaʻo ʻo Wolfspeed e hiki i ka 2024, ke kumukūʻai ʻāpana chip o 8 iniha substrate i hoʻohālikelike ʻia i ke kumu kūʻai o 6 inches substrate i 2022 e hoʻemi ʻia e ʻoi aku ma mua o 60%, a ʻo ka emi ʻana o ke kumukūʻai e wehe hou i ka mākeke noiʻi, Jied Bond Consulting noiʻi noiʻi. ʻO ka māhele mākeke o kēia manawa o nā huahana 8-inihi ka liʻiliʻi ma mua o 2%, a ke manaʻo nei e ulu ka mākeke ma kahi o 15% e 2026.
ʻO ka ʻoiaʻiʻo, ʻoi aku ka nui o ka emi ʻana o ke kumu kūʻai o ka silika carbide substrate ma mua o ka noʻonoʻo ʻana o ka poʻe, ʻo ka hāʻawi ʻana o ka mākeke o 6-inch substrate i kēia manawa he 4000-5000 yuan / ʻāpana, ke hoʻohālikelike ʻia me ka hoʻomaka ʻana o ka makahiki ua hāʻule nui, ua manaʻo ʻia e hāʻule ma lalo o 4000 yuan i ka makahiki e hiki mai ana. ʻO ke kaua kumu kūʻai, ka mea nui i ka hāʻawi ʻana i ka substrate silicon carbide substrate ua lawa i ka haʻahaʻa haʻahaʻa haʻahaʻa, ʻo nā mea hana hale a me nā ʻāina ʻē e hoʻonui ikaika nei i ka hiki ke hana, a i ʻole e hoʻokuʻu i ka silicon carbide substrate ma mua o ka manaʻo.
Ka manawa hoʻouna: Jan-19-2024