ʻO Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: ʻO ka mea like me ʻelua mau hopena like ʻole

1. Nā Koina Maʻemaʻe Divergent no nā Mea Maka

 

He ʻoluʻolu iki nā koi maʻemaʻe o ka SiC papa seramika no kāna meaʻai pauka. ʻO ka maʻamau, hiki i nā huahana papa kalepa me 90%-98% maʻemaʻe ke hoʻokō i ka hapa nui o nā pono noi, ʻoiai ʻo nā keramika kūkulu hana kiʻekiʻe e koi paha i ka maʻemaʻe 98%-99.5% (e laʻa, koi ka SiC i hoʻopaʻa ʻia i ka hopena i ka ʻike silicon manuahi i kāohi ʻia). Hoʻomanawanui ia i kekahi mau haumia a i kekahi manawa hoʻokomo pū i nā mea kōkua sintering e like me ka alumini oxide (Al₂O₃) a i ʻole yttrium oxide (Y₂O₃) e hoʻomaikaʻi i ka hana sintering, hoʻohaʻahaʻa i nā mahana sintering, a hoʻonui i ka nui o ka huahana hope loa.

 

Koi ka SiC semiconductor-grade i nā pae maʻemaʻe kokoke i ka hemolele. Pono ka SiC kristal hoʻokahi papa-papa i ka maʻemaʻe ≥99.9999% (6N), me kekahi mau noi kiʻekiʻe e pono ai ka maʻemaʻe 7N (99.99999%). Pono nā papa epitaxial e mālama i nā ʻano haumia ma lalo o 10¹⁶ mau ʻātoma/cm³ (ʻoi aku ka pale ʻana i nā haumia hohonu e like me B, Al, a me V). ʻOiai nā haumia liʻiliʻi e like me ka hao (Fe), alumini (Al), a i ʻole boron (B) hiki ke hoʻopilikia nui i nā waiwai uila ma o ka hoʻoulu ʻana i ka hoʻopuehu ʻana o ka mea lawe, e hōʻemi ana i ka ikaika o ke kahua haki, a i ka hopena e hoʻopilikia ana i ka hana a me ka hilinaʻi o ka hāmeʻa, e koi ana i ka kaohi pono ʻana i ka haumia.

 

Mea semiconductor silikona carbide

 

2. Nā ʻAno Crystal like ʻole a me ka maikaʻi

 

ʻO ka SiC papa seramika ke kumu nui ma ke ʻano he pauka polycrystalline a i ʻole nā ​​​​kino sintered i haku ʻia me nā microcrystals SiC he nui i hoʻonohonoho ʻia ma ke ʻano random. Hiki i ka mea ke loaʻa nā polytypes he nui (e laʻa, α-SiC, β-SiC) me ka ʻole o ka mana koʻikoʻi ma luna o nā polytypes kikoʻī, me ka hoʻoikaika ʻana ma kahi o ka nui o ka mea holoʻokoʻa a me ke ʻano like. Loaʻa i kona ʻano kūloko nā palena palaoa he nui a me nā pores microscopic, a loaʻa paha nā mea kōkua sintering (e laʻa, Al₂O₃, Y₂O₃).

 

Pono ka SiC semiconductor-grade i nā substrates kristal hoʻokahi a i ʻole nā ​​​​papa epitaxial me nā ʻano kristal i hoʻonohonoho pono ʻia. Pono ia i nā polytypes kikoʻī i loaʻa ma o nā ʻano hana ulu kristal kikoʻī (e laʻa, 4H-SiC, 6H-SiC). ʻO nā waiwai uila e like me ka electron mobility a me ka bandgap he mea koʻikoʻi loa ia i ke koho polytype, e pono ai ke kaohi paʻa. I kēia manawa, ʻo 4H-SiC ka mea nui ma ka mākeke ma muli o kona mau waiwai uila kiʻekiʻe e pili ana i ka mobility lawe kiʻekiʻe a me ka ikaika o ke kahua breakdown, e kūpono ai no nā mea hana mana.

 

3. Hoʻohālikelike ʻana i ka paʻakikī o ke kaʻina hana

 

Hoʻohana ka SiC papa seramika i nā kaʻina hana hana maʻalahi (hoʻomākaukau pauka → hoʻokumu → sintering), e like me ka "hana ʻana i nā piliki." ʻO ke kaʻina hana e pili ana i kēia:

 

• Ke kāwili ʻana i ka pauka SiC papa kalepa (maʻamau ka nui o ka micron) me nā mea hoʻopaʻa
• Hoʻokumu ʻana ma o ke kaomi ʻana
• ʻO ka sintering wela kiʻekiʻe (1600-2200°C) e hoʻokō ai i ka densification ma o ka diffusion particle
  Hiki ke māʻona ka hapa nui o nā noi me ka nui >90%. ʻAʻole koi ke kaʻina holoʻokoʻa i ka kaohi ulu kristal pololei, e kālele ana ma kahi o ka hoʻokumu ʻana a me ke kūlike sintering. ʻO nā pono e komo pū me ka maʻalahi o ke kaʻina hana no nā ʻano paʻakikī, ʻoiai me nā koi maʻemaʻe haʻahaʻa.

 

ʻOi aku ka paʻakikī o nā kaʻina hana paʻakikī o ka SiC semiconductor (hoʻomākaukau ʻana i ka pauka maʻemaʻe kiʻekiʻe → ulu ʻana o ka substrate kristal hoʻokahi → waiho ʻana o ka wafer epitaxial → hana ʻana o ka hāmeʻa). ʻO nā ʻanuʻu koʻikoʻi:

 

• ʻO ka hoʻomākaukau ʻana o ka substrate ma o ke ʻano halihali mahu kino (PVT)
• Ka hoʻoheheʻe ʻana o ka pauka SiC ma nā kūlana koʻikoʻi (2200-2400°C, vacuum kiʻekiʻe)
• Ka mana pololei o nā gradients mahana (± 1°C) a me nā palena kaomi
• ʻO ka ulu ʻana o ka papa epitaxial ma o ka hoʻokaʻawale ʻana o ka mahu kemika (CVD) e hana i nā papa mānoanoa like, i hoʻopili ʻia (ʻo ka maʻamau he mau ʻumi a ʻumi paha o nā microns)
  Pono ke kaʻina hana holoʻokoʻa i nā wahi maʻemaʻe loa (e like me, nā lumi maʻemaʻe Papa 10) e pale aku i ka haumia. ʻO nā hiʻohiʻona e komo pū me ka pololei o ke kaʻina hana, e koi ana i ka kaohi ma luna o nā kahua wela a me nā kahe o ke kinoea, me nā koi koʻikoʻi no ka maʻemaʻe o nā mea maka (>99.9999%) a me ka maʻalahi o nā lako.

 

4. Nā ʻokoʻa koʻikoʻi o ke kumukūʻai a me nā kuhikuhi mākeke

 

Nā hiʻohiʻona SiC papa seramika:

• Mea maka: Pauka pae kalepa
• Nā kaʻina hana maʻalahi
• Kumukūʻai haʻahaʻa: Nā tausani a i nā ʻumi tausani RMB no ke tona
• Nā noi ākea: Nā mea hoʻomaʻemaʻe, nā mea pale ahi, a me nā ʻoihana ʻē aʻe e pili ana i ke kumukūʻai

 

Nā hiʻohiʻona SiC semiconductor-grade:

• Nā pōʻaiapuni ulu lōʻihi o ka substrate
• Ka hoʻokele hemahema paʻakikī
• Nā helu hua haʻahaʻa
• Kumukūʻai kiʻekiʻe: Nā tausani o USD no kēlā me kēia substrate 6-'īniha
• Nā mākeke i kālele ʻia: Nā mea uila hana kiʻekiʻe e like me nā mea mana a me nā ʻāpana RF
  Me ka wikiwiki o ka hoʻomohala ʻana o nā kaʻa ikehu hou a me nā kamaʻilio 5G, ke ulu nui nei ka noi o ka mākeke.

 

5. Nā hiʻohiʻona noi i hoʻokaʻawale ʻia

 

ʻO ka SiC papa seramika e lawelawe ana ma ke ʻano he "lio hana ʻoihana" no nā noi kūkulu. Me ka hoʻohana ʻana i kona mau waiwai mechanical maikaʻi loa (paʻakikī kiʻekiʻe, kū'ē i ka ʻaʻahu) a me nā waiwai thermal (kū'ē i ke kiʻekiʻe o ka mahana, kū'ē i ka oxidation), ʻoi aku ia ma:

 

• Nā mea hoʻowali (nā huila wili, pepa one)
• Nā mea hoʻopaʻa wela (nā uhi umu wela kiʻekiʻe)
• Nā ʻāpana pale i ka ʻaʻahu/ka palaho (nā kino pamu, nā uhi paipu)

 

Nā ʻāpana hoʻonohonoho keramika silikon carbide

 

Hana ka Semiconductor-grade SiC ma ke ʻano he "elite uila," me ka hoʻohana ʻana i kona mau waiwai semiconductor bandgap ākea e hōʻike i nā pono kūikawā i nā polokalamu uila:

 

• Nā mea hana mana: nā mea hoʻololi EV, nā mea hoʻololi grid (e hoʻomaikaʻi ana i ka pono o ka hoʻololi mana)
• Nā mea hana RF: nā kikowaena kahua 5G, nā ʻōnaehana radar (e hiki ai ke hoʻohana i nā alapine hana kiʻekiʻe)
• Optoelectronics: Mea substrate no nā LED polū

 

ʻO ka wafer epitaxial SiC 200-milimita

 

Ana	ʻO SiC papa seramika	ʻO SiC pae semiconductor
ʻAno Crystal	Polycrystalline, nā polytypes he nui	ʻO ke aniani hoʻokahi, nā polytypes i koho pono ʻia
Kaʻina Hana	Ka hoʻopaʻa ʻana a me ka kaohi ʻana i ke ʻano	Ka maikaʻi o ke aniani a me ka kaohi ʻana i nā waiwai uila
Ka Manaʻo Nui o ka Hana	Ikaika mīkini, kūpaʻa i ka pala, kūpaʻa wela	Nā waiwai uila (bandgap, breakdown field, a pēlā aku)
Nā hiʻohiʻona noi	Nā ʻāpana kūkulu, nā ʻāpana pale ʻaʻahu, nā ʻāpana wela kiʻekiʻe	Nā mea hana mana kiʻekiʻe, nā mea hana alapine kiʻekiʻe, nā mea hana optoelectronic
Nā Mea Hoʻokele Kumukūʻai	Ka maʻalahi o ke kaʻina hana, ke kumukūʻai o nā mea maka	ʻO ka nui o ka ulu ʻana o ke aniani, ka pololei o nā lako, ka maʻemaʻe o nā mea maka

 

I ka hōʻuluʻulu manaʻo, ʻo ka ʻokoʻa nui e pili ana i kā lākou mau hana like ʻole: hoʻohana ka SiC papa seramika i ke "ʻano (ʻano)" ʻoiai ʻo ka SiC papa semiconductor e hoʻohana i nā "waiwai (uila)." Ke alualu nei ka mea mua i ka hana mechanical/thermal kūpono, ʻoiai ʻo ka mea hope e hōʻike ana i ka piko o ka ʻenehana hoʻomākaukau mea ma ke ʻano he mea hana kiʻekiʻe, kristal hoʻokahi. ʻOiai ke kaʻana like nei i ke kumu kemika like, hōʻike ka papa seramika a me ka papa semiconductor SiC i nā ʻokoʻa maopopo i ka maʻemaʻe, ka ʻano kristal, a me nā kaʻina hana - akā naʻe hāʻawi nui nā mea ʻelua i ka hana ʻoihana a me ka holomua ʻenehana ma kā lākou mau ʻāpana.