Silicon Carbide Ceramics vs. Semiconductor Silicon Carbide: ʻO ka mea like me ʻelua mau hopena ʻokoʻa.

1. Nā Koina Maʻemaʻe ʻokoʻa no nā mea maka

 

Loaʻa i ka Ceramic-grade SiC nā koi maʻemaʻe maʻemaʻe no kāna meaʻai pauka. ʻO ka mea maʻamau, hiki i nā huahana pāʻoihana me 90% -98% ka maʻemaʻe ke hoʻokō i ka hapa nui o nā pono noi, ʻoiai ʻo nā seramika hana kiʻekiʻe e koi ai i ka 98% -99.5% maʻemaʻe (e laʻa, ʻo ka SiC i hoʻopaʻa ʻia i ka hopena e koi i ka maʻiʻo silika manuahi kaohi). Ua ʻae ʻo ia i kekahi mau mea haumia a i kekahi manawa me ka manaʻo e hoʻokomo i nā mea hana sintering e like me ka alumini oxide (Al₂O₃) a i ʻole yttrium oxide (Y₂O₃) no ka hoʻomaikaʻi ʻana i ka hana sintering, hoʻohaʻahaʻa i nā mahana sintering, a hoʻonui i ka nui o ka huahana hope.

 

Koi ʻo Semiconductor-grade SiC i nā pae maʻemaʻe kokoke loa. Pono ka substrate-grade single crystal SiC i ka ≥99.9999% (6N) maʻemaʻe, me kekahi mau noi kiʻekiʻe e pono ai ka maʻemaʻe 7N (99.99999%). Pono nā papa epitaxial e mālama i nā ʻano haumia ma lalo o 10¹⁶ atoms/cm³ (e pale aku i nā haumia hohonu e like me B, Al, a me V). Hiki i nā mea haumia ʻole e like me ka hao (Fe), aluminika (Al), a i ʻole boron (B) hiki ke hoʻopilikia nui i nā waiwai uila ma o ka hoʻopuehu ʻana i ka mea lawe, hōʻemi i ka ikaika o ka māla, a i ka hopena e hoʻololi i ka hana a me ka hilinaʻi o ka mea pono, pono e hoʻomalu pono i ka haumia.

 

ʻO nā mea semiconductor silikon carbide

 

2. Nā Kūlana Crystal ʻokoʻa a me ka maikaʻi

 

Loaʻa mua ʻia ʻo SiC ma ke ʻano he polycrystalline pauka a i ʻole nā kino sintered i haku ʻia me nā microcrystals SiC like ʻole. Loaʻa paha i nā mea he nui nā polytypes (e laʻa, α-SiC, β-SiC) me ka ʻole o ka mana koʻikoʻi ma luna o nā polytypes kikoʻī, me ka manaʻo nui i ka nui o nā mea āpau a me ka like. ʻO kona ʻano i loko e hōʻike ana i nā palena ʻai nui a me nā pores microscopic, a loaʻa paha nā mea kōkua sintering (e laʻa, Al₂O₃, Y₂O₃).

 

Pono ʻo Semiconductor-grade SiC i nā substrate kristal hoʻokahi a i ʻole nā papa epitaxial me nā hale aniani i kauoha ʻia. Pono ia i nā polytypes kikoʻī i loaʻa ma o nā ʻenehana ulu kristal pololei (e laʻa, 4H-SiC, 6H-SiC). ʻO nā waiwai uila e like me ka electron mobility a me ka bandgap he mea koʻikoʻi loa ia i ke koho polytype, pono ka mana koʻikoʻi. I kēia manawa, hoʻomalu ʻo 4H-SiC i ka mākeke ma muli o kāna mau waiwai uila kiʻekiʻe e pili ana i ka neʻe ʻana o ka mea lawe kiʻekiʻe a me ka ikaika o ka māla, e hoʻolilo iā ia i mea kūpono no nā mana mana.

 

3. Hoʻohālikelike Paʻakikī Kaʻina

 

Hoʻohana ʻo Ceramic-grade SiC i nā kaʻina hana maʻalahi (ka hoʻomākaukau ʻana i ka pauda → hoʻokumu ʻia → sintering), e like me ka "hana hana pōhaku." Aia ke kaʻina hana:

 

• Ka hui pū ʻana i ka pauka SiC pae pāʻoihana (maʻamau ka nui o ka micron) me nā mea paʻa
• Hoʻokumu ʻia ma ke kaomi ʻana
• ʻO ka sintering wela kiʻekiʻe (1600-2200°C) e hoʻokō i ka densification ma o ka diffusion particle
  Hiki ke māʻona ka hapa nui o nā noi me> 90% density. ʻAʻole koi ke kaʻina holoʻokoʻa i ka mana ulu kristal pololei, e kālele ana i ka hoʻokumu ʻana a me ka hoʻopaʻa ʻana. Loaʻa nā pōmaikaʻi i ka maʻalahi o ke kaʻina hana no nā ʻano paʻakikī, ʻoiai me nā koi maʻemaʻe haʻahaʻa.

 

ʻO ka Semiconductor-grade SiC e pili ana i nā kaʻina hana ʻoi aku ka paʻakikī (ka hoʻomākaukau ʻana i ka pauka maʻemaʻe kiʻekiʻe → ka ulu ʻana o ka substrate hoʻokahi-crystal → epitaxial wafer deposition → ka hana ʻana i nā mea hana). Loaʻa nā ʻanuʻu koʻikoʻi:

 

• ʻO ka hoʻomākaukau ʻana o ka substrate ma o ke ʻano o ka lawe ʻana i ka mahu kino (PVT).
• ʻO ka sublimation o ka pauka SiC ma nā kūlana koʻikoʻi (2200-2400 ° C, ʻūhā kiʻekiʻe)
• Ka hoʻomalu pono ʻana i nā gradients wela (± 1°C) a me nā ʻāpana kaomi
• ʻO ka ulu ʻana o ka papa epitaxial ma o ka hoʻoheheʻe ʻana o ka mahu kemika (CVD) e hana i nā ʻano mānoanoa like ʻole, nā papa doped (maʻamau i nā ʻumi microns)
  Pono ke kaʻina holoʻokoʻa i nā kaiapuni ultra-maʻemaʻe (e laʻa, nā lumi hoʻomaʻemaʻe papa 10) e pale i ka hoʻohaumia ʻana. ʻO nā hiʻohiʻona ka pololei o ke kaʻina hana, e koi ana i ka mana ma luna o nā māla wela a me nā kahe kahe o ke kinoea, me nā koi koʻikoʻi no ka maʻemaʻe o nā mea maka (>99.9999%) a me ka maʻalahi o nā lako.

 

4. Nā ʻokoʻa koʻikoʻi o ke kumukūʻai a me nā ʻano kūʻai kūʻai

 

ʻO nā hiʻohiʻona SiC-grade Ceramic:

• Mea maka: ʻO ka pauda ʻoihana kūʻai
• Nā kaʻina hana maʻalahi
• ʻO ke kumu kūʻai haʻahaʻa: He mau tausani a ʻumi tausani RMB no ke tona
• Nā noi ākea: Abrasive, refractory, a me nā ʻoihana ʻē aʻe e pili ana i ke kumu kūʻai

 

Nā hiʻohiʻona Semiconductor-grade SiC:

• Ka lōʻihi o ka ulu ʻana o ka substrate
• ʻO ka hoʻomalu kīnā paʻakikī
• Haʻahaʻa haʻahaʻa hua
• ʻO ke kumu kūʻai kiʻekiʻe: He mau tausani USD no ka substrate 6-inihi
• Nā mākeke i hoʻopaʻa ʻia: ʻO nā mea uila hana kiʻekiʻe e like me nā mana mana a me nā ʻāpana RF
  Me ka hoʻomohala wikiwiki ʻana o nā kaʻa ikehu hou a me nā kamaʻilio 5G, ke ulu nui nei ka mākeke.

 

5. Nā hiʻohiʻona noiʻi like ʻole

 

Hana ʻia ʻo Ceramic-grade SiC ma ke ʻano he "mea hana ʻoihana" no nā noi hoʻolālā. ʻO ka hoʻohana ʻana i kāna mau waiwai mechanical maikaʻi loa (ka paʻakikī kiʻekiʻe, ke kūpaʻa ʻana o ka lole) a me nā waiwai wela (ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa oxidation), ʻoi aku ia i:

 

• Abrasive (nā huila wili, pepa one)
• ʻO nā mea hoʻopaʻapaʻa (nā lining kiln wela kiʻekiʻe)
• ʻO nā mea ʻaʻahu a pale i ka ʻino (nā kino pauma, nā ʻili paipu)

 

Silicon carbide ceramic structural component

 

Hana ʻo Semiconductor-grade SiC ma ke ʻano he "electronic elite," me ka hoʻohana ʻana i kāna mau waiwai semiconductor bandgap ākea e hōʻike i nā pono kūʻokoʻa i nā mea uila.

 

• Mea mana: EV inverters, grid converters (hoʻomaikaʻi i ka hoʻololi ʻana i ka mana)
• Nā polokalamu RF: 5G kahua kahua, ʻōnaehana radar (hiki i nā alapine hana kiʻekiʻe)
• Optoelectronics: Nā mea lepo no nā LED polū

 

200-milimita SiC epitaxial wafer

 

Anana	SiC-māmā	Semiconductor-grade SiC
Hoʻomoe Crystal	Polycrystalline, mau polytypes	ʻO ke aniani hoʻokahi, nā polytypes i koho ʻia
Kaʻina Hana	ʻO ka hoʻopaʻa ʻana a me ke ʻano hoʻomalu	ʻO ka maikaʻi kristal a me ka hoʻomalu waiwai uila
Ka Manao Hana	Mechanical ikaika, corrosion kū'ē, thermal paʻa	Nā waiwai uila (bandgap, breakdown field, etc.)
Nā hiʻohiʻona noiʻi	Nā mea hoʻolālā, nā'āpana pale lole, nā mea wela kiʻekiʻe	Nā mea mana kiʻekiʻe, nā mea uila kiʻekiʻe, nā mea optoelectronic
Na Keaukaha Uku	ʻO ka maʻalahi o ke kaʻina hana, ke kumu kūʻai kumu	Ka nui o ka ulu ʻana o ka kristal, ka pololei o nā mea hana, ka maʻemaʻe o ka mea maka

 

I ka hōʻuluʻulu ʻana, loaʻa ka ʻokoʻa kumu mai kā lākou kumu hana ʻokoʻa: hoʻohana ʻo SiC-grade ceramic i ka "form (structure)" aʻo ka semiconductor-grade SiC e hoʻohana ana i "nā waiwai (electrical)." ʻO ka mea mua e hahai ana i ka hana mechanical/thermal kumu kūʻai, ʻoiai ʻo ka mea hope e hōʻike ana i ke kiʻekiʻe o ka ʻenehana hoʻomākaukau waiwai e like me ke kiʻekiʻe-maʻemaʻe, hoʻokahi-crystal functional material. ʻOiai ke kaʻana like ʻana i ke kumu kemika hoʻokahi, hōʻike ʻo SiC-grade a me semiconductor-grade SiC i nā ʻokoʻa ʻokoʻa o ka maʻemaʻe, ka ʻano kristal, a me nā kaʻina hana hana - akā naʻe ua hāʻawi ʻelua i nā haʻawina koʻikoʻi i ka hana ʻenehana a me ka holomua ʻenehana i kā lākou mau kikowaena.