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He Alakaʻi Piha i nā Wafers Silicon Carbide/SiC wafer

ʻO ka hōʻuluʻulu manaʻo o ka wafer SiC

 Nā wafers Silicon carbide (SiC)ua lilo i substrate o ke koho no nā mea uila mana kiʻekiʻe, alapine kiʻekiʻe, a me nā mahana kiʻekiʻe ma waena o nā ʻāpana kaʻa, ikehu hou, a me nā aerospace. Uhi kā mākou waihona i nā polytypes koʻikoʻi a me nā papahana doping—nitrogen-doped 4H (4H-N), semi-insulating maʻemaʻe kiʻekiʻe (HPSI), nitrogen-doped 3C (3C-N), a me p-type 4H/6H (4H/6H-P)—i hāʻawi ʻia i ʻekolu mau papa maikaʻi: PRIME (nā substrates polished piha, device-grade), DUMMY (lapped a i ʻole unpolished no nā hoʻokolohua kaʻina hana), a me RESEARCH (nā papa epi maʻamau a me nā ʻikepili doping no R&D). ʻO ke anawaena Wafer he 2″, 4″, 6″, 8″, a me 12″ e kūpono i nā mea hana kahiko a me nā fabs holomua. Hāʻawi pū mākou i nā boules monocrystalline a me nā kristal hua i kuhikuhi pono ʻia e kākoʻo i ka ulu ʻana o ka kristal i loko o ka hale.

Loaʻa i kā mākou mau wafers 4H-N nā densities lawe mai 1 × 10¹⁶ a i 1 × 10¹⁹ cm⁻³ a me nā resistivities o 0.01–10 Ω·cm, e hāʻawi ana i ka neʻe ʻana o ka electron maikaʻi loa a me nā kahua breakdown ma luna o 2 MV/cm—kūpono no nā diodes Schottky, MOSFETs, a me JFETs. ʻOi aku ka nui o nā substrates HPSI ma mua o 1 × 10¹² Ω·cm resistivity me nā densities micropipe ma lalo o 0.1 cm⁻², e hōʻoiaʻiʻo ana i ka liʻiliʻi o ka leakage no nā mea RF a me nā microwave. ʻO Cubic 3C-N, loaʻa i nā ʻano 2″ a me 4″, hiki iā ia ke hoʻohana i ka heteroepitaxy ma ka silicon a kākoʻo i nā noi photonic a me MEMS hou. ʻO nā wafers P-type 4H/6H-P, i ​​hoʻohui ʻia me ka alumini i 1 × 10¹⁶–5 × 10¹⁸ cm⁻³, e hoʻomaʻamaʻa i nā hoʻolālā mea hoʻohui.

ʻO ka wafer SiC, nā wafer PRIME e hana ana i ka polishing kemika-mechanical i ka <0.2 nm RMS surface roughness, ka loli o ka mānoanoa ma lalo o 3 µm, a me ke kakaka <10 µm. Hoʻolalelale nā ​​substrates DUMMY i nā hoʻāʻo hōʻuluʻulu a me ka hoʻopili ʻana, ʻoiai ʻo nā wafers RESEARCH e hōʻike ana i nā mānoanoa epi-layer o 2-30 µm a me ka doping bespoke. Hōʻoia ʻia nā huahana āpau e ka diffraction X-ray (rocking curve <30 arcsec) a me ka spectroscopy Raman, me nā hoʻāʻo uila—nā ana ʻo Hall, C-V profiling, a me ka micropipe scanning—e hōʻoiaʻiʻo ana i ka hoʻokō ʻana o JEDEC a me SEMI.

Hoʻoulu ʻia nā boules a hiki i ke anawaena o 150 mm ma o PVT a me CVD me nā dislocation density ma lalo o 1 × 10³ cm⁻² a me ka helu micropipe haʻahaʻa. ʻOki ʻia nā kristal hua i loko o 0.1° o ke axis-c e hōʻoia i ka ulu hana hou a me nā hua ʻoki kiʻekiʻe.

Ma ka hoʻohui ʻana i nā polytypes he nui, nā ʻano doping, nā māka maikaʻi, nā nui o ka wafer SiC, a me ka hana boule a me ka kristal hua i loko o ka hale, hoʻomaʻamaʻa kā mākou kahua substrate SiC i nā kaulahao lako a hoʻolalelale i ka hoʻomohala ʻana o nā hāmeʻa no nā kaʻa uila, nā grids akamai, a me nā noi kaiapuni paʻakikī.

ʻO ka hōʻuluʻulu manaʻo o ka wafer SiC

 Nā wafers Silicon carbide (SiC)ua lilo i substrate SiC i koho ʻia no nā mea uila mana kiʻekiʻe, alapine kiʻekiʻe, a me nā mahana kiʻekiʻe ma waena o nā ʻāpana kaʻa, ikehu hou, a me nā aerospace. Uhi kā mākou waihona i nā polytypes koʻikoʻi a me nā papahana doping—4H (4H-N) i hoʻopili ʻia me ka nitrogen, semi-insulating maʻemaʻe kiʻekiʻe (HPSI), 3C (3C-N) i hoʻopili ʻia me ka nitrogen, a me ke ʻano p 4H/6H (4H/6H-P)—i hāʻawi ʻia i ʻekolu mau pae maikaʻi: SiC waferʻO PRIME (nā substrates piha i hoʻopili ʻia, nā substrates papa-hana), DUMMY (lapped a i ʻole unpolished no nā hoʻokolohua kaʻina hana), a me RESEARCH (nā papa epi maʻamau a me nā ʻikepili doping no R&D). ʻO ke anawaena o SiC Wafer he 2″, 4″, 6″, 8″, a me 12″ e kūpono i nā mea hana kahiko a me nā fabs holomua. Hāʻawi pū mākou i nā boules monocrystalline a me nā kristal hua i kuhikuhi pono ʻia e kākoʻo i ka ulu ʻana o ka kristal i loko o ka hale.

Loaʻa i kā mākou mau wafers 4H-N SiC nā densities lawe mai 1 × 10¹⁶ a i 1 × 10¹⁹ cm⁻³ a me nā resistivities o 0.01–10 Ω·cm, e hāʻawi ana i ka neʻe ʻana o ka electron maikaʻi loa a me nā kahua breakdown ma luna o 2 MV/cm—kūpono no nā diodes Schottky, MOSFETs, a me JFETs. ʻOi aku ka nui o nā substrates HPSI ma mua o 1 × 10¹² Ω·cm resistivity me nā densities micropipe ma lalo o 0.1 cm⁻², e hōʻoiaʻiʻo ana i ka liʻiliʻi o ka leakage no nā mea RF a me nā microwave. ʻO Cubic 3C-N, loaʻa i nā ʻano 2″ a me 4″, hiki iā ia ke hoʻohana i ka heteroepitaxy ma ka silicon a kākoʻo i nā noi photonic a me MEMS hou. ʻO nā wafers SiC wafer P-type 4H/6H-P, i ​​hoʻohui ʻia me ka alumini i 1 × 10¹⁶–5 × 10¹⁸ cm⁻³, e hoʻomaʻamaʻa i nā hoʻolālā mea hoʻohui.

Hoʻomaʻamaʻa ʻia nā wafer SiC PRIME i ka hoʻopili kemika-mekanika i ka <0.2 nm RMS ʻili paʻakikī, ka loli o ka mānoanoa ma lalo o 3 µm, a me ke kakaka <10 µm. Hoʻolalelale nā ​​substrates DUMMY i nā hoʻāʻo hōʻuluʻulu a me ka hoʻopili ʻana, ʻoiai ʻo nā wafers RESEARCH e hōʻike ana i nā mānoanoa epi-layer o 2-30 µm a me ka doping bespoke. Hōʻoia ʻia nā huahana āpau e ka diffraction X-ray (rocking curve <30 arcsec) a me ka spectroscopy Raman, me nā hoʻāʻo uila—nā ana ʻo Hall, C–V profiling, a me ka micropipe scanning—e hōʻoiaʻiʻo ana i ka hoʻokō ʻana o JEDEC a me SEMI.

Hoʻoulu ʻia nā boules a hiki i ke anawaena o 150 mm ma o PVT a me CVD me nā dislocation density ma lalo o 1 × 10³ cm⁻² a me ka helu micropipe haʻahaʻa. ʻOki ʻia nā kristal hua i loko o 0.1° o ke axis-c e hōʻoia i ka ulu hana hou a me nā hua ʻoki kiʻekiʻe.

Ma ka hoʻohui ʻana i nā polytypes he nui, nā ʻano doping, nā māka maikaʻi, nā nui o ka wafer SiC, a me ka hana boule a me ka kristal hua i loko o ka hale, hoʻomaʻamaʻa kā mākou kahua substrate SiC i nā kaulahao lako a hoʻolalelale i ka hoʻomohala ʻana o nā hāmeʻa no nā kaʻa uila, nā grids akamai, a me nā noi kaiapuni paʻakikī.

Kiʻi o ka wafer SiC

ʻO ka pepa ʻikepili o ka wafer SiC ʻano 6 iniha 4H-N

 

Pepa ʻikepili wafers SiC 6'īniha
Palena Palena liʻiliʻi Papa Z Papa P Papa D
Anawaena   149.5–150.0 mm 149.5–150.0 mm 149.5–150.0 mm
Mānoanoa 4H-N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Mānoanoa 4H-SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
Hoʻonohonoho Wafer   ʻO ke axis ma waho: 4.0° i ka ʻaoʻao <11-20> ±0.5° (4H-N); Ma ke axis: <0001> ±0.5° (4H-SI) ʻO ke axis ma waho: 4.0° i ka ʻaoʻao <11-20> ±0.5° (4H-N); Ma ke axis: <0001> ±0.5° (4H-SI) ʻO ke axis ma waho: 4.0° i ka ʻaoʻao <11-20> ±0.5° (4H-N); Ma ke axis: <0001> ±0.5° (4H-SI)
Ka nui o ka micropipe 4H-N ≤ 0.2 kenimika⁻² ≤ 2 kenimika⁻² ≤ 15 kenimika⁻²
Ka nui o ka micropipe 4H-SI ≤ 1 kenimika⁻² ≤ 5 kenimika⁻² ≤ 15 kenimika⁻²
Ke kū'ē ʻana 4H-N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Ke kū'ē ʻana 4H-SI ≥ 1×10¹⁰ Ω·cm ≥ 1×10⁵ Ω·cm  
Kūlana Pālahalaha Mua   [10-10] ± 5.0° [10-10] ± 5.0° [10-10] ± 5.0°
Ka Lōʻihi Palahalaha Mua 4H-N 47.5 mm ± 2.0 mm    
Ka Lōʻihi Palahalaha Mua 4H-SI ʻOki    
Hoʻokaʻawale ʻana i ka lihi     3 mm  
Warp/LTV/TTV/Kakaka   ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm  
ʻOʻoleʻa Pōlani Ra ≤ 1 nm    
ʻOʻoleʻa CMP Ra ≤ 0.2 nm   Ra ≤ 0.5 nm
Nā Māwae Lihi   ʻAʻohe   Ka lōʻihi huina ≤ 20 mm, hoʻokahi ≤ 2 mm
Nā Papa Hex   ʻĀpana hōʻuluʻulu ≤ 0.05% ʻĀpana hōʻuluʻulu ≤ 0.1% ʻĀpana hōʻuluʻulu ≤ 1%
Nā Wahi Polytype   ʻAʻohe ʻĀpana hōʻuluʻulu ≤ 3% ʻĀpana hōʻuluʻulu ≤ 3%
Nā Hoʻokomo Kalapona   ʻĀpana hōʻuluʻulu ≤ 0.05%   ʻĀpana hōʻuluʻulu ≤ 3%
Nā ʻōpala ʻili   ʻAʻohe   Ka lōʻihi huina ≤ 1 × ke anawaena wafer
Nā ʻāpana lihi   ʻAʻohe mea i ʻae ʻia ≥ 0.2 mm ka laulā a me ka hohonu   A hiki i 7 mau ʻāpana, ≤ 1 mm kēlā me kēia
TSD (Hoʻokaʻawale ʻana o nā wili wili)   ≤ 500 kenimika⁻²   ʻAʻohe
BPD (Ka Hoʻokaʻawale ʻana o ka Papa Kumu)   ≤ 1000 kenimika⁻²   ʻAʻohe
Ka haumia ʻili   ʻAʻohe    
Ka hoʻopili ʻana   Kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi Kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi Kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi

ʻO ka pepa ʻikepili o ka wafer SiC ʻano 4 iniha 4H-N

 

Palapala ʻikepili o ka wafer SiC 4 iniha
Palena Hana ʻana o ka Zero MPD Papa Hana Maʻamau (Pae P) Papa Hoʻopunipuni (Papa D)
Anawaena 99.5 mm–100.0 mm
Mānoanoa (4H-N) 350 µm±15 µm   350 µm±25 µm
Mānoanoa (4H-Si) 500 µm±15 µm   500 µm±25 µm
Hoʻonohonoho Wafer ʻO ke axis ma waho: 4.0° i ka ʻaoʻao <1120> ±0.5° no 4H-N; Ma ke axis: <0001> ±0.5° no 4H-Si    
Ka nui o ka paipu liʻiliʻi (4H-N) ≤0.2 kenimika⁻² ≤2 kenimika⁻² ≤15 kenimika⁻²
Ka nui o ka paipu liʻiliʻi (4H-Si) ≤1 kenimika⁻² ≤5 kenimika⁻² ≤15 kenimika⁻²
Ke kū'ē ʻana (4H-N)   0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Ke kū'ē ʻana (4H-Si) ≥1E10 Ω·cm   ≥1E5 Ω·cm
Kūlana Pālahalaha Mua   [10-10] ±5.0°  
Ka Lōʻihi Palahalaha Mua   32.5 mm ±2.0 mm  
Ka Lōʻihi Pālahalaha Lua   18.0 mm ±2.0 mm  
Kūlana Pālahalaha Lua   Ke alo o Silicon i luna: 90° CW mai ka pālahalaha mua ±5.0°  
Hoʻokaʻawale ʻana i ka lihi   3 mm  
LTV/TTV/ʻŌwiliwili Kakaka ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
ʻOʻoleʻa ʻO Ra Polani ≤1 nm; CMP Ra ≤0.2 nm   Ra ≤0.5 nm
Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe ʻAʻohe ʻAʻohe Ka lōʻihi huina ≤10 mm; ka lōʻihi hoʻokahi ≤2 mm
Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe ʻĀpana hōʻuluʻulu ≤0.05% ʻĀpana hōʻuluʻulu ≤0.05% ʻĀpana hōʻuluʻulu ≤0.1%
Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe ʻAʻohe   ʻĀpana hōʻuluʻulu ≤3%
Nā Hoʻokomo Kalapona ʻIke ʻĀpana hōʻuluʻulu ≤0.05%   ʻĀpana hōʻuluʻulu ≤3%
Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe ʻAʻohe   Ka lōʻihi huina ≤1 ke anawaena wafer
Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe ʻAʻohe mea i ʻae ʻia ≥0.2 mm ka laulā a me ka hohonu   5 i ʻae ʻia, ≤1 mm kēlā me kēia
Ka haumia ʻana o ka ʻili Silicon e ka mālamalama ikaika kiʻekiʻe ʻAʻohe    
Hoʻokaʻawale ʻana o ka wili wili ≤500 kenimika⁻² ʻAʻohe  
Ka hoʻopili ʻana Kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi Kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi Kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi

ʻO ka pepa ʻikepili o ka wafer SiC ʻano HPSI 4 iniha

 

ʻO ka pepa ʻikepili o ka wafer SiC ʻano HPSI 4 iniha
Palena Papa Hana MPD ʻOle (Pae Z) Papa Hana Maʻamau (Pae P) Papa Hoʻopunipuni (Papa D)
Anawaena   99.5–100.0 mm  
Mānoanoa (4H-Si) 500 µm ±20 µm   500 µm ±25 µm
Hoʻonohonoho Wafer ʻO ke axis ma waho: 4.0° i ka ʻaoʻao <11-20> ±0.5° no 4H-N; Ma ke axis: <0001> ±0.5° no 4H-Si
Ka nui o ka paipu liʻiliʻi (4H-Si) ≤1 kenimika⁻² ≤5 kenimika⁻² ≤15 kenimika⁻²
Ke kū'ē ʻana (4H-Si) ≥1E9 Ω·cm   ≥1E5 Ω·cm
Kūlana Pālahalaha Mua (10-10) ±5.0°
Ka Lōʻihi Palahalaha Mua 32.5 mm ±2.0 mm
Ka Lōʻihi Pālahalaha Lua 18.0 mm ±2.0 mm
Kūlana Pālahalaha Lua Ke alo o Silicon i luna: 90° CW mai ka pālahalaha mua ±5.0°
Hoʻokaʻawale ʻana i ka lihi   3 mm  
LTV/TTV/ʻŌwiliwili Kakaka ≤3 µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
ʻOʻoleʻa (maka C) Pōlani Ra ≤1 nm  
ʻOʻoleʻa (maka Si) CMP Ra ≤0.2 nm Ra ≤0.5 nm
Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe ʻAʻohe   Ka lōʻihi huina ≤10 mm; ka lōʻihi hoʻokahi ≤2 mm
Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe ʻĀpana hōʻuluʻulu ≤0.05% ʻĀpana hōʻuluʻulu ≤0.05% ʻĀpana hōʻuluʻulu ≤0.1%
Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe ʻAʻohe   ʻĀpana hōʻuluʻulu ≤3%
Nā Hoʻokomo Kalapona ʻIke ʻĀpana hōʻuluʻulu ≤0.05%   ʻĀpana hōʻuluʻulu ≤3%
Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe ʻAʻohe   Ka lōʻihi huina ≤1 ke anawaena wafer
Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe ʻAʻohe mea i ʻae ʻia ≥0.2 mm ka laulā a me ka hohonu   5 i ʻae ʻia, ≤1 mm kēlā me kēia
Ka haumia ʻana o ka ʻili Silicon e ka mālamalama ikaika kiʻekiʻe ʻAʻohe   ʻAʻohe
Ka Hoʻokaʻawale ʻana o ka Wili Uila ≤500 kenimika⁻² ʻAʻohe  
Ka hoʻopili ʻana   Kaseti wafer multi-wafer a i ʻole ka ipu wafer hoʻokahi  

Ka hoʻohana ʻana o ka wafer SiC

 

  • Nā Modula Mana Wafer SiC no nā mea hoʻohuli EV
    ʻO nā MOSFET a me nā diode i hoʻokumu ʻia ma ka wafer SiC i kūkulu ʻia ma luna o nā substrates wafer SiC kiʻekiʻe e hāʻawi i nā pohō hoʻololi haʻahaʻa loa. Ma ka hoʻohana ʻana i ka ʻenehana wafer SiC, hana kēia mau modula mana i nā voltages a me nā mahana kiʻekiʻe, e hiki ai i nā inverters traction ʻoi aku ka maikaʻi. ʻO ka hoʻohui ʻana i nā make wafer SiC i loko o nā pae mana e hōʻemi ana i nā koi hoʻoluʻu a me ka kapuaʻi, e hōʻike ana i ka hiki piha o ka hana hou wafer SiC.

  • Nā Mea Hana RF a me 5G Alapine Kiʻekiʻe ma ka SiC Wafer
    ʻO nā mea hoʻoikaika RF a me nā kuapo i hana ʻia ma nā kahua wafer SiC semi-insulating e hōʻike ana i ka conductivity thermal maikaʻi loa a me ka volta breakdown. Hoʻemi ka substrate wafer SiC i nā pohō dielectric ma nā alapine GHz, ʻoiai ʻo ka ikaika o ka mea o ka wafer SiC e ʻae ai i ka hana paʻa ma lalo o nā kūlana mana kiʻekiʻe, wela kiʻekiʻe—e hoʻolilo ana i ka wafer SiC i substrate koho no nā kikowaena kumu 5G hanauna hou a me nā ʻōnaehana radar.

  • Nā Substrates Optoelectronic & LED mai SiC Wafer
    ʻO nā LED polū a me UV i ulu ʻia ma nā substrates wafer SiC e pōmaikaʻi mai ka hoʻohālikelike lattice maikaʻi loa a me ka hoʻopuehu wela. ʻO ka hoʻohana ʻana i kahi wafer C-face SiC i poli ʻia e hōʻoiaʻiʻo i nā papa epitaxial like, ʻoiai ʻo ka paʻakikī kūlohelohe o ka wafer SiC e hiki ai ke lahilahi maikaʻi i ka wafer a me ka hoʻopili pono ʻana i nā mea hana. ʻO kēia ka mea e lilo ai ka wafer SiC i kahua hele no nā noi LED mana kiʻekiʻe, lōʻihi ke ola.

Nā nīnau a me nā pane no ka wafer SiC

1. Q: Pehea e hana ʻia ai nā wafers SiC?


A:

Nā wafer SiC i hana ʻiaNā ʻanuʻu kikoʻī

  1. Nā wafers SiCHoʻomākaukau ʻana i nā mea maka

    • E hoʻohana i ka pauka SiC ≥5N-grade (nā mea haumia ≤1 ppm).
    • E kānana a hoʻomoʻa mua e wehe i ke koena o nā hui kalapona a naikokene paha.

  1. SiCHoʻomākaukau ʻana i ka kristal hua

    • E lawe i kahi ʻāpana o ke kristal hoʻokahi 4H-SiC, ʻokiʻoki ma ke kuhikuhi 〈0001〉 i ~10 × 10 mm².

    • E poli pololei i Ra ≤0.1 nm a māka i ke kuhikuhi kristal.

  2. SiCKa ulu ʻana o PVT (ka halihali ʻana i ka mahu kino)

    • E hoʻouka i ka ipu hoʻoheheʻe graphite: lalo me ka pauka SiC, luna me ke kristal hua.

    • E hoʻoneʻe i 10⁻³–10⁻⁵ Torr a i ʻole e hoʻopiha me ka helium maʻemaʻe kiʻekiʻe ma 1 atm.

    • E hoʻomehana i ka ʻāpana kumu i 2100–2300 ℃, e mālama i ka ʻāpana hua i 100–150 ℃ anuanu.

    • E kāohi i ka wikiwiki o ka ulu ʻana ma 1-5 mm/h e kaulike i ka maikaʻi a me ka throughput.

  3. SiCHoʻoheheʻe ʻana i ka ʻiota

    • E hoʻomoʻa i ka ingot SiC i ulu aʻe ma 1600–1800 ℃ no 4–8 mau hola.

    • Pahuhopu: hoʻomaha i nā pilikia wela a hoʻemi i ka nui o ka dislocation.

  4. SiCʻOki ʻana i ka Wafer

    • E hoʻohana i ka ʻoki uea daimana e ʻokiʻoki i ka ingot i mau wafers 0.5-1 mm ka mānoanoa.

    • E hōʻemi i ka haʻalulu a me ka ikaika ʻaoʻao e pale aku ai i nā māwae liʻiliʻi.

  5. SiCWaferWili a me ka hoʻowali ʻana

    • Wili ʻana me ka ʻāwili nuie wehe i nā pōʻino i ʻoki ʻia (ʻoʻoleʻa ~10–30 µm).

    • Wili maikaʻie hoʻokō i ka pālahalaha ≤5 µm.

    • Ka Polishing Kemika-Mīkini (CMP)e hōʻea i ka hoʻopau ʻana e like me ke aniani (Ra ≤0.2 nm).

  6. SiCWaferHoʻomaʻemaʻe a me ka nānā ʻana

    • Hoʻomaʻemaʻe ultrasonici ka hoʻonā Piranha (H₂SO₄:H₂O₂), ka wai DI, a laila IPA.

    • ʻIkepili XRD/Ramane hōʻoia i ka polytype (4H, 6H, 3C).

    • Interferometrye ana i ka pālahalaha (<5 µm) a me ka warp (<20 µm).

    • ʻŌmole ʻehā kikoe hoʻāʻo i ke kū'ē'ē (e laʻa me HPSI ≥10⁹ Ω·cm).

    • Nānā hemahemama lalo o ka microscope mālamalama polarized a me ka mea hoʻāʻo ʻōpala.

  7. SiCWaferHoʻokaʻawale & Hoʻokaʻawale

    • E hoʻokaʻawale i nā wafers ma ka polytype a me ke ʻano uila:

      • ʻAno-N 4H-SiC (4H-N): ka nui o ka mea lawe 10¹⁶–10¹⁸ cm⁻³

      • 4H-SiC Kiʻekiʻe Maʻemaʻe Semi-Insulating (4H-HPSI): resistivity ≥10⁹ Ω·cm

      • ʻAno-N 6H-SiC (6H-N)

      • Nā mea ʻē aʻe: 3C-SiC, ʻano-P, a pēlā aku.

  8. SiCWaferKa hoʻopili ʻana a me ka hoʻouna ʻana

    • E waiho i loko o nā pahu wafer maʻemaʻe a ʻaʻohe lepo.

    • E lepili i kēlā me kēia pahu me ke anawaena, ka mānoanoa, ka polytype, ka māka resistivity, a me ka helu puʻupuʻu.

      Nā wafers SiC

2. N: He aha nā pono koʻikoʻi o nā wafers SiC ma luna o nā wafers silicon?


A: Ke hoʻohālikelike ʻia me nā wafers silicon, hiki i nā wafers SiC ke:

  • Hana uila kiʻekiʻe(>1,200 V) me ke kū'ē'ē haʻahaʻa.

  • ʻOi aku ka paʻa o ka mahana(>300 °C) a me ka hoʻokele wela i hoʻomaikaʻi ʻia.

  • Nā wikiwiki hoʻololi wikiwikime nā pohō hoʻololi haʻahaʻa, e hōʻemi ana i ka hoʻoluʻu pae ʻōnaehana a me ka nui i nā mea hoʻololi mana.

4. Q: He aha nā hemahema maʻamau e hoʻopilikia ai i ka hua a me ka hana o ka wafer SiC?


A: ʻO nā hemahema nui i nā wafers SiC e komo pū me nā micropipes, nā basal plane dislocations (BPDs), a me nā ʻōpala o ka ʻili. Hiki i nā micropipes ke hana i ka hāʻule ʻana o ka hāmeʻa; hoʻonui nā BPDs i ke kū'ē ʻana i ka hala ʻana o ka manawa; a alakaʻi nā ʻōpala o ka ʻili i ka haki ʻana o ka wafer a i ʻole ka ulu ʻana o ka epitaxial maikaʻi ʻole. No laila, he mea nui ka nānā pono ʻana a me ka hoʻēmi ʻana i nā hemahema e hoʻonui i ka hua wafer SiC.

Ka manawa hoʻouna: Iune-30-2025
E kaomi iā enter e huli a i ʻole ESC e pani