ʻO ka abstract a SiC wafer
Ua lilo nā wafers Silicon carbide (SiC) i substrate o ke koho no ka mana kiʻekiʻe, kiʻekiʻe-frequency, a me nā mea uila wela kiʻekiʻe ma waena o ka automotive, ikehu hou, a me nā ʻāpana aerospace. Hoʻopili kā mākou kōpili i nā polytypes nui a me nā papa hana doping—nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), a me ka p-type 4H/6H (4H/6H-P)—i hāʻawi ʻia i ʻekolu mau māka maikaʻi: PRIME (pololei piha, Dpolished-grades a me nā substrates) NUI (nā papa epi maʻamau a me nā ʻaoʻao doping no R&D). He 2″, 4″, 6″, 8″, a me 12″ nā anawaena wafer e kūpono i nā mea hana hoʻoilina a me nā mea hana kiʻekiʻe. Hāʻawi pū mākou i nā boules monocrystalline a me nā kristal hua i hoʻonohonoho pono ʻia e kākoʻo i ka ulu ʻana o ka kristal i loko o ka hale.
ʻO kā mākou mau wafers 4H-N e hōʻike ana i nā densities lawe mai 1 × 10¹⁶ a i 1 × 10¹⁹ cm⁻³ a me nā resistivities o 0.01–10 Ω·cm, e hāʻawi ana i ka mobility electron maikaʻi loa a me nā kahua haʻihaʻi ma luna o 2 MV/cm — kūpono no nā diodes Schottky, MOSFETs. ʻOi aku ka nui o ka pale HPSI i ka 1×10¹² Ω·cm me ka mānoanoa micropipe ma lalo o 0.1 cm⁻², e hōʻoia ana i ka liʻiliʻi liʻiliʻi no nā mea RF a me ka microwave. ʻO Cubic 3C-N, loaʻa i nā ʻano 2″ a me 4″, hiki i ka heteroepitaxy ma ke silika a kākoʻo i nā noi photonic a me MEMS. P-type 4H/6H-P wafers, doped me ka aluminika i 1×10¹⁶–5×10¹⁸ cm⁻³, hoʻomaʻamaʻa i ka hoʻolālā ʻana o nā mea hoʻohui.
Hana ʻia nā wafers PRIME i ka poli kemika-mechanical a hiki i ka <0.2 nm RMS ʻeleʻele o ka ʻili, ka nui o ka mānoanoa ma lalo o 3 µm, a me ke kakaka <10 µm. Hoʻonui ka DUMMY substrates i ka hōʻuluʻulu ʻana a me ka hoʻāʻo ʻana, ʻoiai ʻo RESEARCH wafers e hōʻike ana i ka mānoanoa epi-layer o 2-30 µm a me ka doping bespoke. Hoʻopaʻa ʻia nā huahana āpau e ka diffraction X-ray (ka puʻupuʻu haʻalulu <30 arcsec) a me Raman spectroscopy, me nā hoʻāʻo uila—nā ana o ka Hale, C-V profiling, a me ka micropipe scanning—e hōʻoia ana i ka JEDEC a me SEMI.
Hoʻoulu ʻia nā boule a hiki i 150 mm anawaena ma o PVT a me CVD me ka dislocation densities ma lalo o 1×10³ cm⁻² a me nā helu micropipe haʻahaʻa. Hoʻokiʻoki ʻia nā hua kristal i loko o 0.1° o ka axis c e hōʻoia i ka ulu hou ʻana a me nā hua ʻoki kiʻekiʻe.
Ma ka hoʻohui ʻana i nā polytypes he nui, nā ʻano doping, nā māka maikaʻi, ka nui wafer, a me ka boule i loko o ka hale a me ka hana ʻana i nā hua-crystal, ʻo kā mākou SiC substrate platform e hoʻoheheʻe i nā kaulahao lako a hoʻolalelale i ka hoʻomohala ʻana i nā hāmeʻa no nā kaʻa uila, nā mākaʻikaʻi akamai, a me nā noiʻi ʻino.
ʻO ka abstract a SiC wafer
Ua lilo nā wafers Silicon carbide (SiC) i substrate o ke koho no ka mana kiʻekiʻe, kiʻekiʻe-frequency, a me nā mea uila wela kiʻekiʻe ma waena o ka automotive, ikehu hou, a me nā ʻāpana aerospace. Hoʻopili kā mākou kōpili i nā polytypes nui a me nā papa hana doping—nitrogen-doped 4H (4H-N), high-purity semi-insulating (HPSI), nitrogen-doped 3C (3C-N), a me ka p-type 4H/6H (4H/6H-P)—i hāʻawi ʻia i ʻekolu mau māka maikaʻi: PRIME (pololei piha, Dpolished-grades a me nā substrates) NUI (nā papa epi maʻamau a me nā ʻaoʻao doping no R&D). He 2″, 4″, 6″, 8″, a me 12″ nā anawaena wafer e kūpono i nā mea hana hoʻoilina a me nā mea hana kiʻekiʻe. Hāʻawi pū mākou i nā boules monocrystalline a me nā kristal hua i hoʻonohonoho pono ʻia e kākoʻo i ka ulu ʻana o ka kristal i loko o ka hale.
ʻO kā mākou mau wafers 4H-N e hōʻike ana i nā densities lawe mai 1 × 10¹⁶ a i 1 × 10¹⁹ cm⁻³ a me nā resistivities o 0.01–10 Ω·cm, e hāʻawi ana i ka mobility electron maikaʻi loa a me nā kahua haʻihaʻi ma luna o 2 MV/cm — kūpono no nā diodes Schottky, MOSFETs. ʻOi aku ka nui o ka pale HPSI i ka 1×10¹² Ω·cm me ka mānoanoa micropipe ma lalo o 0.1 cm⁻², e hōʻoia ana i ka liʻiliʻi liʻiliʻi no nā mea RF a me ka microwave. ʻO Cubic 3C-N, loaʻa i nā ʻano 2″ a me 4″, hiki i ka heteroepitaxy ma ke silika a kākoʻo i nā noi photonic a me MEMS. P-type 4H/6H-P wafers, doped me ka aluminika i 1×10¹⁶–5×10¹⁸ cm⁻³, hoʻomaʻamaʻa i ka hoʻolālā ʻana o nā mea hoʻohui.
Hana ʻia nā wafers PRIME i ka poli kemika-mechanical a hiki i ka <0.2 nm RMS ʻeleʻele o ka ʻili, ka nui o ka mānoanoa ma lalo o 3 µm, a me ke kakaka <10 µm. Hoʻonui ka DUMMY substrates i ka hōʻuluʻulu ʻana a me ka hoʻāʻo ʻana, ʻoiai ʻo RESEARCH wafers e hōʻike ana i ka mānoanoa epi-layer o 2-30 µm a me ka doping bespoke. Hoʻopaʻa ʻia nā huahana āpau e ka diffraction X-ray (ka puʻupuʻu haʻalulu <30 arcsec) a me Raman spectroscopy, me nā hoʻāʻo uila—nā ana o ka Hale, C-V profiling, a me ka micropipe scanning—e hōʻoia ana i ka JEDEC a me SEMI.
Hoʻoulu ʻia nā boule a hiki i 150 mm anawaena ma o PVT a me CVD me ka dislocation densities ma lalo o 1×10³ cm⁻² a me nā helu micropipe haʻahaʻa. Hoʻokiʻoki ʻia nā hua kristal i loko o 0.1° o ka axis c e hōʻoia i ka ulu hou ʻana a me nā hua ʻoki kiʻekiʻe.
Ma ka hoʻohui ʻana i nā polytypes he nui, nā ʻano doping, nā māka maikaʻi, ka nui wafer, a me ka boule i loko o ka hale a me ka hana ʻana i nā hua-crystal, ʻo kā mākou SiC substrate platform e hoʻoheheʻe i nā kaulahao lako a hoʻolalelale i ka hoʻomohala ʻana i nā hāmeʻa no nā kaʻa uila, nā mākaʻikaʻi akamai, a me nā noiʻi ʻino.
Kiʻi ʻo SiC wafer
6 ʻīniha 4H-N ʻano SiC wafer pepa ʻikepili
| 6 ʻīniha SiC wafers pepa ʻikepili | ||||
| ʻĀpana | Palena Haʻahaʻa | Z Papa | P Papa | Papa D |
| Anawaena | 149.5–150.0 mm | 149.5–150.0 mm | 149.5–150.0 mm | |
| mānoanoa | 4H‑N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| mānoanoa | 4H‑SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Kūlana Wafer | Koi aku: 4.0° i ka <11-20> ± 0.5° (4H-N); Ma ke axis: <0001> ± 0.5° (4H-SI) | Koi aku: 4.0° i ka <11-20> ± 0.5° (4H-N); Ma ke axis: <0001> ± 0.5° (4H-SI) | Koi aku: 4.0° i ka <11-20> ± 0.5° (4H-N); Ma ke axis: <0001> ± 0.5° (4H-SI) | |
| Micropipe Density | 4H‑N | ≤ 0.2 knm⁻² | ≤ 2 knm⁻² | ≤ 15 knm⁻² |
| Micropipe Density | 4H‑SI | ≤ 1 knm⁻² | ≤ 5 knm⁻² | ≤ 15 knm⁻² |
| Kū'ē | 4H‑N | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | 0.015–0.028 Ω·cm |
| Kū'ē | 4H‑SI | ≥ 1×10¹⁰ Ω·cm | ≥ 1×10⁵ Ω·cm | |
| Kūlana Pāha mua | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Ka lōʻihi pālahalaha | 4H‑N | 47.5 mm ± 2.0 mm | ||
| Ka lōʻihi pālahalaha | 4H‑SI | Notch | ||
| Hoʻokuʻu Edge | 3 mm | |||
| Warp/LTV/TTV/Bow | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| ʻoʻoleʻa | Pōlani | Ra ≤ 1 nm | ||
| ʻoʻoleʻa | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Nā māwae Edge | ʻAʻohe | ʻO ka lōʻihi hui ≤ 20 mm, hoʻokahi ≤ 2 mm | ||
| Papa Hex | ʻĀpana hui ≤ 0.05% | ʻĀpana hui ≤ 0.1% | ʻĀpana hui ≤ 1% | |
| Nā ʻāpana Polytype | ʻAʻohe | ʻĀpana hui ≤ 3% | ʻĀpana hui ≤ 3% | |
| Hoʻokomo kalapona | ʻĀpana hui ≤ 0.05% | ʻĀpana hui ≤ 3% | ||
| Nā ʻili ʻili | ʻAʻohe | Huina lōʻihi ≤ 1 × wafer anawaena | ||
| ʻOpeʻa Kiki | ʻAʻole ʻae ʻia ≥ 0.2 mm laula a me ka hohonu | A hiki i 7 chips, ≤ 1 mm kēlā me kēia | ||
| TSD (Hoʻokaʻawale ʻia ʻo Threading Screw Dislocation) | ≤ 500 knm⁻² | N/A | ||
| BPD (Hoʻokaʻawale ʻia ʻo Base Plane) | ≤ 1000 knm⁻² | N/A | ||
| Hoʻohaumia ʻili | ʻAʻohe | |||
| Hoʻopili ʻana | ʻO ka cassette multi-wafer a i ʻole ka pahu wafer hoʻokahi | ʻO ka cassette multi-wafer a i ʻole ka pahu wafer hoʻokahi | ʻO ka cassette multi-wafer a i ʻole ka pahu wafer hoʻokahi | |
4 ʻīniha 4H-N ʻano SiC wafer pepa ʻikepili
| 4 ʻīniha SiC wafer pepa ʻikepili | |||
| ʻĀpana | ʻO Zero MPD Production | Papa Hana Maʻamau (P Grade) | Papa Dummy (Papa D) |
| Anawaena | 99.5 mm–100.0 mm | ||
| Mānoanoa (4H-N) | 350 µm±15 µm | 350 µm±25 µm | |
| Mānoanoa (4H-Si) | 500 µm±15 µm | 500 µm±25 µm | |
| Kūlana Wafer | Koi aku: 4.0° i ka <1120> ± 0.5° no 4H-N; Ma ke axis: <0001> ± 0.5° no 4H-Si | ||
| ʻOiʻa Micropipe (4H-N) | ≤0.2 knm⁻² | ≤2 knm⁻² | ≤15 knm⁻² |
| ʻOiʻa Micropipe (4H-Si) | ≤1 knm⁻² | ≤5 knm⁻² | ≤15 knm⁻² |
| Kū'ē (4H-N) | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | |
| Kū'ē (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Kūlana Pāha mua | [10-10] ±5.0° | ||
| Ka lōʻihi pālahalaha | 32.5 mm ±2.0 mm | ||
| Ka lōʻihi pālahalaha lua | 18.0 mm ±2.0 mm | ||
| Kūlana Pāpā lua | Ke alo i luna: 90° CW mai ka palahalaha nui ± 5.0° | ||
| Hoʻokuʻu Edge | 3 mm | ||
| LTV/TTV/Ka Kakaka | ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| ʻoʻoleʻa | Polani Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe | ʻAʻohe | ʻAʻohe | ʻO ka lōʻihi huila ≤10 mm; hoʻokahi lōʻihi ≤2 mm |
| Nā Papa Hex Ma ka Māmā Kiʻekiʻe | ʻĀpana hui ≤0.05% | ʻĀpana hui ≤0.05% | ʻĀpana hui ≤0.1% |
| Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe | ʻAʻohe | ʻĀpana hui ≤3% | |
| Hoʻokomo ʻia ʻo Carbon Visual | ʻĀpana hui ≤0.05% | ʻĀpana hui ≤3% | |
| ʻO nā ʻili ʻili silikoni e ka māmā ikaika kiʻekiʻe | ʻAʻohe | ʻO ka lōʻihi huila ≤1 anawaena wafer | |
| Nā Kiʻi Kiʻi Ma ka Māmā Kiʻekiʻe | ʻAʻole ʻae ʻia ≥0.2 mm laula a me ka hohonu | 5 ʻae ʻia, ≤1 mm kēlā me kēia | |
| ʻO ka hoʻohaumia ʻana i ka ʻili o ka Silicon e ka māmā ikaika | ʻAʻohe | ||
| ʻO ka wehe ʻana i ka wili wili | ≤500 knm⁻² | N/A | |
| Hoʻopili ʻana | ʻO ka cassette multi-wafer a i ʻole ka pahu wafer hoʻokahi | ʻO ka cassette multi-wafer a i ʻole ka pahu wafer hoʻokahi | ʻO ka cassette multi-wafer a i ʻole ka pahu wafer hoʻokahi |
4 ʻīniha HPSI ʻano SiC wafer pepa ʻikepili
| 4 ʻīniha HPSI ʻano SiC wafer pepa ʻikepili | |||
| ʻĀpana | ʻAʻohe papa hana MPD (Z Grade) | Papa Hana Maʻamau (P Grade) | Papa Dummy (Papa D) |
| Anawaena | 99.5–100.0 mm | ||
| Mānoanoa (4H-Si) | 500 µm ±20 µm | 500 µm ±25 µm | |
| Kūlana Wafer | Paʻa axis: 4.0° i ka <11-20> ± 0.5° no 4H-N; Ma ke axis: <0001> ± 0.5° no 4H-Si | ||
| ʻOiʻa Micropipe (4H-Si) | ≤1 knm⁻² | ≤5 knm⁻² | ≤15 knm⁻² |
| Kū'ē (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Kūlana Pāha mua | (10-10) ±5.0° | ||
| Ka lōʻihi pālahalaha | 32.5 mm ±2.0 mm | ||
| Ka lōʻihi pālahalaha lua | 18.0 mm ±2.0 mm | ||
| Kūlana Pāpā lua | Ke alo i luna: 90° CW mai ka palahalaha nui ± 5.0° | ||
| Hoʻokuʻu Edge | 3 mm | ||
| LTV/TTV/Ka Kakaka | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| 'O'ole'e (C alo) | Pōlani | Ra ≤1 nm | |
| Roughness (Si alo) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe | ʻAʻohe | ʻO ka lōʻihi huila ≤10 mm; hoʻokahi lōʻihi ≤2 mm | |
| Nā Papa Hex Ma ka Māmā Kiʻekiʻe | ʻĀpana hui ≤0.05% | ʻĀpana hui ≤0.05% | ʻĀpana hui ≤0.1% |
| Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe | ʻAʻohe | ʻĀpana hui ≤3% | |
| Hoʻokomo ʻia ʻo Carbon Visual | ʻĀpana hui ≤0.05% | ʻĀpana hui ≤3% | |
| ʻO nā ʻili ʻili silikoni e ka māmā ikaika kiʻekiʻe | ʻAʻohe | ʻO ka lōʻihi huila ≤1 anawaena wafer | |
| Nā Kiʻi Kiʻi Ma ka Māmā Kiʻekiʻe | ʻAʻole ʻae ʻia ≥0.2 mm laula a me ka hohonu | 5 ʻae ʻia, ≤1 mm kēlā me kēia | |
| ʻO ka hoʻohaumia ʻana i ka ʻili o ka Silicon e ka māmā ikaika | ʻAʻohe | ʻAʻohe | |
| Hoʻokaʻawale ʻia ka Uila Uila | ≤500 knm⁻² | N/A | |
| Hoʻopili ʻana | ʻO ka cassette multi-wafer a i ʻole ka pahu wafer hoʻokahi | ||
Ka manawa hoʻouna: Iune-30-2025