SOI (Silicon-On-Insulator) wafershōʻike i kahi mea semiconductor kūikawā e hōʻike ana i kahi ʻāpana silika lahilahi i hoʻokumu ʻia ma luna o kahi papa insulating oxide. Hāʻawi kēia ʻano hana sandwich kūʻokoʻa i nā hoʻonui hana nui no nā mea semiconductor.
Hoʻokumu ʻia:
Lapa Mea Hana (Silicon Top):
ʻO ka mānoanoa mai nā nanometer a i nā micrometers, e lawelawe ana ma ke ʻano he papa hana no ka hana transistor.
Layer ʻOxide i kanu ʻia (BOX):
ʻO kahi papa hoʻoheheʻe silicon dioxide (0.05-15μm mānoanoa) e hoʻokaʻawale i ka ʻili uila i ka papa hana mai ka substrate.
Ke kahua kahua:
ʻO ka silika nui (100-500μm mānoanoa) hāʻawi i ke kākoʻo mechanical.
E like me ka ʻenehana kaʻina hana hoʻomākaukau, hiki ke hoʻokaʻawale ʻia nā ala kaʻina hana nui o SOI silicon wafers: SIMOX (oxygen injection isolation technology), BESOI (bonding thinning technology), a me Smart Cut (intelligent stripping technology).
ʻO SIMOX (Oxygen injection isolation technology) kahi ʻenehana e hoʻokomo i nā ion oxygen ikaika nui i loko o nā wafer silika e hana i kahi papa silicon dioxide i hoʻokomo ʻia, a laila e hoʻopili ʻia i ka annealing kiʻekiʻe e hoʻoponopono i nā hemahema lattice. ʻO ke kumu ʻo ia ka ion oxygen injection e hana i ka oxygen layer kanu.
ʻO ka BESOI (Bonding Thinning Technology) e pili ana i ka hoʻopaʻa ʻana i ʻelua wafer silika a laila e hoʻoheheʻe i kekahi o ia mau mea ma o ka wili mīkini a me ke kālai kemika e hana i kahi ʻano SOI. Aia ke kumu i ka hoʻopaʻa ʻana a me ka lahilahi.
Hana ʻia ʻo Smart Cut (Intelligent Exfoliation Technology) i kahi papa exfoliation ma o ka hoʻokele hydrogen ion. Ma hope o ka hoʻopaʻa ʻana, hoʻokō ʻia ka mālama wela e exfoliate i ka wafer silika ma ka ʻāpana hydrogen ion, e hana ana i kahi ʻāpana silika lahilahi. ʻO ke kumu ka wehe ʻana i ka hydrogen injection.
I kēia manawa, aia kekahi ʻenehana i kapa ʻia ʻo SIMBOND (oxygen injection bonding technology), i hoʻomohala ʻia e Xinao. ʻO ka ʻoiaʻiʻo, he ala ia e hoʻohui ai i ka hoʻokaʻawale ʻana i ka oxygen a me nā ʻenehana paʻa. Ma kēia ala ʻenehana, hoʻohana ʻia ka oxygen i hoʻokomo ʻia ma ke ʻano he ʻāpana pale ʻokiʻoki, a ʻo ka papa oxygen kanu maoli ʻia he papa hoʻonā wela. No laila, hoʻomaikaʻi like ia i nā ʻāpana e like me ke kūlike o ka silika luna a me ka maikaʻi o ka pae oxygen i kanu ʻia.
ʻO nā wafers silicon SOI i hana ʻia e nā ala ʻenehana like ʻole he mau ʻāpana hana like ʻole a kūpono i nā hiʻohiʻona noiʻi like ʻole.
ʻO kēia ka papaʻaina hōʻuluʻulu o nā pono hana nui o nā wafers silicon SOI, i hui pū ʻia me kā lākou mau hiʻohiʻona ʻenehana a me nā hiʻohiʻona noiʻi maoli. Ke hoʻohālikelike ʻia me ka silika nui kahiko, loaʻa i ka SOI nā pōmaikaʻi nui i ke kaulike o ka wikiwiki a me ka hoʻohana mana. (PS: ʻO ka hana o 22nm FD-SOI kokoke i ka FinFET, a ua hoʻemi ʻia ke kumukūʻai e 30%.)
Pōmaikaʻi hana | Kuʻuna ʻenehana | Hōʻike kikoʻī | Nā hiʻohiʻona noi maʻamau |
Haʻahaʻa Parasitic Capacitance | Hoʻopili ʻia ka papa insulating layer (BOX) i ka hoʻopili ʻana ma waena o ka mea hana a me ka substrate | Ua hoʻonui ʻia ka wikiwiki o ka hoʻololi ʻana e 15% -30%, hoʻemi ʻia ka hoʻohana mana e 20%-50% | 5G RF, Kiekie-frequency chips kamaʻilio |
Hoʻemi ʻia ka Leakage | Kāohi ka papa insulating i nā ala leakage o kēia manawa | Hoʻemi ʻia ka leakage e >90%, hoʻonui i ke ola pākaukau | Nā lako IoT, nā mea uila hiki ke hoʻohana ʻia |
Hoʻonui ʻia ʻo Radiation Hardness | Paʻa ka papa insulating i ka hōʻiliʻili ʻana i ka hoʻouka ʻana i ka radiation | Ua hoʻomaikaʻi ʻia ka hoʻomanawanui ʻana o ka radiation i 3-5x, hoʻemi ʻia nā pilikia hanana hoʻokahi | ʻO nā mokulele mokulele, nā lako ʻoihana Nukelea |
Hoʻoholo i ka hopena o ke ala pōkole | ʻO ka papa silika lahilahi e hōʻemi ana i ka hoʻopili ʻana o ke kahua uila ma waena o ka wai a me ke kumu | Ua hoʻomaikaʻi ʻia ka paʻa ʻana o ka volta paepae, ʻoi aku ka maikaʻi o ka slope subthreshold | ʻO nā puʻupuʻu loiloi node kiʻekiʻe (<14nm) |
Hoʻomaikaʻi i ka hoʻokele wela | Hoʻemi ka papa insulating i ka hoʻohui ʻana i ka wela | 30% emi ka wela, 15-25°C haʻahaʻa wela hana | Nā IC 3D, ʻElekini Kaʻa |
ʻO ka hoʻolālā kiʻekiʻe | Hoʻemi ʻia ka capacitance parasitic a hoʻonui i ka neʻe o ka mea lawe | 20% haʻahaʻa haʻahaʻa, kākoʻo> 30GHz kaʻina hana hōʻailona | Ke kamaʻilio mmWave, nā ʻāpana kelepona |
Hoʻonui i ka hiki ke hoʻolālā | ʻAʻole pono ka doping maikaʻi, kākoʻo i ka hoʻohaʻahaʻa hope | 13% -20% liʻiliʻi kaʻina hana, 40% kiʻekiʻe ka hoʻohui ʻana | Nā IC hōʻailona hui ʻia, nā mea ʻike |
Latch-up Immunity | Hoʻokaʻawale ka papa insulating i nā hui PN parasitic | Ua hoʻonui ʻia ka paepae o kēia manawa i ka 100mA | Nā mea uila uila kiʻekiʻe |
I ka hōʻuluʻulu ʻana, ʻo nā pono nui o SOI: holo wikiwiki a ʻoi aku ka maikaʻi o ka mana.
Ma muli o kēia mau hiʻohiʻona hana o SOI, loaʻa iā ia nā noi ākea i nā kula e koi ana i ka hana alapine maikaʻi loa a me ka hana hoʻohana mana.
E like me ka mea i hōʻike ʻia ma lalo nei, e pili ana i ka hapa o nā kahua noi e pili ana me SOI, hiki ke ʻike ʻia ʻo RF a me nā mea mana mana no ka hapa nui o ka mākeke SOI.
Kahua noi | Mahele Makeke |
RF-SOI (Ka Lekiō) | 45% |
Mana SOI | 30% |
FD-SOI (Hoʻopau Loaʻa) | 15% |
Optical SOI | 8% |
ʻIke SOI | 2% |
Me ka ulu ʻana o nā mākeke e like me ke kamaʻilio kelepona a me ka hoʻokele autonomous, manaʻo ʻia hoʻi nā wafers silicon SOI e mālama i kahi ulu ulu.
ʻO XKH, ma ke ʻano he mea hoʻomohala nui i ka ʻenehana wafer Silicon-On-Insulator (SOI), hāʻawi i nā hoʻonā SOI piha mai ka R&D a i ka hana nui e hoʻohana ana i nā kaʻina hana alakaʻi alakaʻi. Loaʻa i kā mākou kōpili piha nā wafers 200mm/300mm SOI e pili ana i nā ʻano ʻano like ʻole RF-SOI, Power-SOI a me FD-SOI, me ka mana koʻikoʻi koʻikoʻi e hōʻoiaʻiʻo ana i ka kūlike o ka hana ʻokoʻa (ka like ʻole o ka mānoanoa o ± 1.5%). Hāʻawi mākou i nā hāʻina maʻamau me ka buried oxide (BOX) layer mānoanoa mai 50nm a 1.5μm a me nā kikoʻī resistivity like ʻole e hoʻokō i nā koi kikoʻī. Ke hoʻohana nei i 15 mau makahiki o ka ʻike loea a me kahi kaulahao hoʻolako honua ikaika, hāʻawi mākou i nā mea substrate SOI kiʻekiʻe kiʻekiʻe i nā mea hana semiconductor kiʻekiʻe ma ka honua holoʻokoʻa, e ʻae ana i nā hana hou ʻokiʻoki i nā kamaʻilio 5G, nā uila uila, a me nā noi hana akamai.
Ka manawa hoʻouna: Apr-24-2025