ʻO nā pono oMa o Glass Via (TGV)a Ma o Silicon Via(TSV) kaʻina hana ma luna o TGV ka mea nui:
(1) maikaʻi loa kiʻekiʻe-frequency uila hiʻona. ʻO nā mea aniani he mea insulator, ʻo ka dielectric mau wale nō e pili ana i ka 1/3 o ka mea silika, a ʻo ka mea nalowale he 2-3 mau kauoha o ka nui haʻahaʻa ma mua o ka mea silika, kahi e hoʻemi nui ai ka poho substrate a me nā hopena parasitic. a hōʻoia i ka pono o ka hōʻailona i hoʻounaʻia;
(2)nui nui a me ka ipu aniani ʻeleʻelemaʻalahi ke loaʻa. Hiki iā Corning, Asahi a me SCHOTT a me nā mea hana aniani ʻē aʻe ke hāʻawi i ka nui nui loa (>2m × 2m) a me nā aniani panel ultra-thin (<50µm) a me nā mea aniani hikiwawe loa.
3) Ke kumu kūʻai haʻahaʻa. E pōmaikaʻi mai ka maʻalahi o ke komo ʻana i ke aniani panel ultra-thin nui, a ʻaʻole pono i ka deposition o nā papa insulating, ʻo ke kumukūʻai hana o ke aniani adapter plate aia wale nō ma kahi o 1/8 o ka pā mea hoʻopili silicon;
4) Kaʻina hana maʻalahi. ʻAʻole pono e waiho i kahi papa insulating ma ka ʻili o ka substrate a me ka paia o loko o ka TGV, a ʻaʻohe pono o ka thinning i loko o ka pā hoʻololi ultra-thin;
(5) Paʻa mechanical ikaika. ʻOiai ʻoi aku ka liʻiliʻi o ka mānoanoa o ka pā adapter ma mua o 100µm, liʻiliʻi ka warpage;
(6) ʻO ka laulā o nā noi, kahi ʻenehana interconnect longitudinal e kū nei i hoʻohana ʻia i ke kahua o ka wafer-level packaging, e hoʻokō i ka mamao pōkole ma waena o ka wafer-wafer, ʻo ka haʻahaʻa haʻahaʻa o ka interconnect e hāʻawi i kahi ala ʻenehana hou, me ka uila maikaʻi loa. , thermal, mechanical properties, i ka RF chip, high-end MEMS sensors, high-density system integration and other areas with unique advantages, is the next generation of 5G, 6G high-frequency chip 3D ʻO ia kekahi o nā koho mua no Hoʻopili 3D o ka hanauna hou aʻe 5G a me 6G kiʻekiʻe-frequency chips.
ʻO ke kaʻina hana hoʻoheheʻe o TGV ka nui o ka sandblasting, kani kani ultrasonic, wet etching, deep reactive ion etching, photosensitive etching, laser etching, laser-induced depth etching, a me ka hoʻokumu ʻana i nā puka hoʻokuʻu.
Hōʻike nā hualoaʻa noiʻi a me ka hoʻomohala hou e hiki i ka ʻenehana ke hoʻomākaukau ma o nā lua a me 5: 1 mau puka makapō me ka hohonu a me ka laulā o 20: 1, a loaʻa ka morphology maikaʻi. ʻO ke kālai hohonu i hoʻokomo ʻia i ka laser, ʻo ia ka hopena o ka ʻili liʻiliʻi o ka ʻili, ʻo ia ke ʻano i aʻo ʻia i kēia manawa. E like me ka mea i hōʻike ʻia ma ke Kiʻi 1, aia nā māwae a puni ka wili laser maʻamau, ʻoiai ʻo nā paia a puni a me nā ʻaoʻao o ka etching hohonu i hoʻokomo ʻia i ka laser he maʻemaʻe a maʻemaʻe.
Ke kaʻina hana oTGVHōʻike ʻia ka interposer ma ke Kiʻi 2. ʻO ka hoʻolālā holoʻokoʻa e wili mua i nā lua ma ka substrate aniani, a laila e waiho i ka papa pale a me ka papa hua ma ka paia ʻaoʻao a me ka ʻili. ʻO ka papa pale pale i ka diffusion o Cu i ka substrate aniani, ʻoiai e hoʻonui ana i ka adhesion o nā mea ʻelua, ʻoiaʻiʻo, i kekahi mau haʻawina ʻike ʻia ʻaʻole pono ka papa pale. A laila waiho ʻia ka Cu e ka electroplating, a laila annealed, a wehe ʻia ka papa Cu e CMP. ʻO ka mea hope loa, ua hoʻomākaukau ʻia ka papa rewiring RDL e PVD coating lithography, a ua hoʻokumu ʻia ka papa passivation ma hope o ka wehe ʻia ʻana o ke kāpili.
(a) Ka hoʻomākaukau ʻana i ka wafer, (b) hoʻokumu ʻia o TGV, (c) electroplating ʻaoʻao ʻelua - deposition o ke keleawe, (d) annealing a me ka CMP chemical-mechanical polishing, ka wehe ʻana i ka papa keleawe ma luna, (e) ka uhi PVD a me ka lithography. , (f) kau o RDL rewiring papa, (g) degluing a me Cu/Ti etching, (h) hookumu ana o ka papa passivation.
E hōʻuluʻulu,aniani ma ka puka (TGV)He ākea ka manaʻo noiʻi, a ke piʻi nei ka mākeke kūloko o kēia manawa, mai nā lako a hiki i ka hoʻolālā huahana a me ka noiʻi a me ka ulu ʻana o ka ulu ʻana ma mua o ka awelika honua.
Inā loaʻa ka hewa, hoʻopau i ke kelepona
Ka manawa hoʻouna: Jul-16-2024