Nā pono oMa o ke Aniani Via (TGV)a ʻo nā kaʻina hana ma o Silicon Via (TSV) ma luna o TGV penei:
(1) nā ʻano uila alapine kiʻekiʻe maikaʻi loa. He mea insulator ka mea aniani, ʻo ka dielectric constant ma kahi o 1/3 wale nō o ka mea silicon, a ʻo ka mea pohō he 2-3 mau kauoha o ka nui ma mua o ka mea silicon, kahi e hoʻemi nui ai i ka pohō substrate a me nā hopena parasitic a hōʻoia i ka pono o ka hōʻailona i hoʻouna ʻia;
(2)ka nui a me ka substrate aniani lahilahi loahe maʻalahi ke loaʻa. Hiki iā Corning, Asahi lāua ʻo SCHOTT a me nā mea hana aniani ʻē aʻe ke hāʻawi i nā aniani panela nui loa (>2m × 2m) a me nā aniani lahilahi loa (<50µm) a me nā mea aniani palupalu lahilahi loa.
3) Kumukūʻai haʻahaʻa. E pōmaikaʻi mai ka maʻalahi o ke komo ʻana i ke aniani panela lahilahi nui, a ʻaʻole pono ka waiho ʻana o nā papa insulating, ʻo ke kumukūʻai hana o ka papa adapter aniani he 1/8 wale nō o ka papa adapter silicon-based;
4) Kaʻina hana maʻalahi. ʻAʻohe pono e waiho i kahi papa insulating ma ka ʻili substrate a me ka paia o loko o ka TGV, a ʻaʻohe pono e lahilahi i loko o ka papa adapter ultra-thin;
(5) Paʻa ikaika o ka mīkini. ʻOiai inā emi ka mānoanoa o ka papa hoʻololi ma mua o 100µm, liʻiliʻi nō ka warpage;
(6) ʻO ka laulā o nā noi, he ʻenehana interconnect longitudinal e kū mai ana i hoʻohana ʻia ma ke kahua o ka hoʻopili ʻana i ka pae wafer, no ka hoʻokō ʻana i ka mamao pōkole loa ma waena o ka wafer-wafer, ʻo ka pitch liʻiliʻi o ka interconnect e hāʻawi i kahi ala ʻenehana hou, me nā waiwai uila, thermal, mechanical maikaʻi loa, ma ka chip RF, nā sensor MEMS kiʻekiʻe, ka hoʻohui ʻana o ka ʻōnaehana density kiʻekiʻe a me nā wahi ʻē aʻe me nā pono kūikawā, ʻo ia ka hanauna hou o 5G, 6G chip alapine kiʻekiʻe 3D ʻO ia kekahi o nā koho mua no ka hoʻopili ʻana 3D o nā chips alapine kiʻekiʻe 5G a me 6G hanauna hou.
ʻO ke kaʻina hana hoʻoheheʻe ʻana o TGV e pili ana i ka oneblasting, ka ʻeli ultrasonic, ka ʻeli pulu, ka ʻeli ion reactive hohonu, ka ʻeli photosensitive, ka ʻeli laser, ka ʻeli hohonu i hoʻokomo ʻia e ka laser, a me ka hoʻokumu ʻana i ka lua hoʻokuʻu kiko.
Ua hōʻike ʻia nā hopena noiʻi a me ka hoʻomohala hou ʻana e hiki i ka ʻenehana ke hoʻomākaukau ma o nā lua a me nā lua makapō 5:1 me ka lakio hohonu a me ka laulā o 20:1, a he ʻano maikaʻi ko lākou. ʻO ke kālai hohonu i hoʻokomo ʻia e ka laser, ka mea e hopena ai i ka ʻili liʻiliʻi, ʻo ia ke ʻano i aʻo nui ʻia i kēia manawa. E like me ka mea i hōʻike ʻia ma ke Kiʻi 1, aia nā māwae maopopo a puni ka ʻeli laser maʻamau, ʻoiai ʻo nā paia a puni a me nā paia ʻaoʻao o ke kālai hohonu i hoʻokomo ʻia e ka laser he maʻemaʻe a laumania.
Ke kaʻina hana oTGVUa hōʻike ʻia ka mea hoʻopili ma ke Kiʻi 2. ʻO ka hoʻolālā holoʻokoʻa, ʻo ia ke wili mua i nā lua ma ka substrate aniani, a laila waiho i ka papa pale a me ka papa hua ma ka paia ʻaoʻao a me ka ʻili. Pale ka papa pale i ka hoʻolaha ʻana o Cu i ka substrate aniani, ʻoiai e hoʻonui ana i ka hoʻopili ʻana o nā mea ʻelua, ʻoiaʻiʻo, i kekahi mau haʻawina ua ʻike ʻia hoʻi ʻaʻole pono ka papa pale. A laila waiho ʻia ka Cu ma ka electroplating, a laila annealed, a wehe ʻia ka papa Cu e CMP. ʻO ka hope loa, hoʻomākaukau ʻia ka papa rewiring RDL e ka lithography uhi PVD, a hoʻokumu ʻia ka papa passivation ma hope o ka wehe ʻana o ke kāpili.
(a) Hoʻomākaukau ʻana o ka wafer, (b) hoʻokumu ʻana o TGV, (c) electroplating ʻaoʻao pālua - waiho ʻana o ke keleawe, (d) annealing a me ka CMP chemical-mechanical polishing, wehe ʻana i ka papa keleawe ʻili, (e) PVD coating a me lithography, (f) kau ʻana o ka papa RDL rewiring, (g) degluing a me Cu/Ti etching, (h) hoʻokumu ʻana o ka papa passivation.
I ka hōʻuluʻulu ʻana,aniani ma o ka lua (TGV)ākea nā manaʻolana noi, a aia ka mākeke kūloko o kēia manawa i ke kahua e piʻi nei, mai nā lako a hiki i ka hoʻolālā huahana a me ka noiʻi a me ka ulu ʻana o ka hoʻomohala ʻana ua ʻoi aku ke kiʻekiʻe ma mua o ka awelika honua.
Inā he hewa, e holoi i ka hoʻokaʻaʻike
Ka manawa hoʻouna: Iulai-16-2024