SiC silikon carbideʻO ka mea hana e pili ana i ka mea hana i hana ʻia me ka silicon carbide e like me ka mea maka.
E like me nā ʻano ʻokoʻa kūʻē kūʻē, ua māhele ʻia i nā mea mana conductive silicon carbide acarbide silika semi-insulatedNā lako RF.
ʻO nā ʻano mea hana nui a me nā hoʻohana ʻana o ka silika carbide
ʻO nā pono nui o SiC ma muaʻO nā mea waiwaihe:
Loaʻa i ka SiC kahi āpau 3 mau manawa o ka Si, hiki ke hōʻemi i ka leakage a hoʻonui i ka hoʻomanawanui wela.
Loaʻa iā SiC he 10 mau manawa o ka ikaika o ka mahina ʻo Si, hiki ke hoʻomaikaʻi i ka nui o kēia manawa, ka hana pinepine ʻana, ke kū ʻana i ka mana uila a hoʻemi i ka nalowale on-off, ʻoi aku ka kūpono no nā noi uila kiʻekiʻe.
Loaʻa ʻelua ʻo SiC i ka wikiwiki o ka holo ʻana o ka electron saturation o Si, no laila hiki iā ia ke hana ma ke alapine kiʻekiʻe.
Loaʻa iā SiC he 3 mau manawa i ka conductivity thermal o Si, ʻoi aku ka maikaʻi o ka hoʻopau ʻana i ka wela, hiki ke kākoʻo i ka mana kiʻekiʻe a hoʻemi i nā koi dissipation wela, e hoʻomaʻamaʻa i ka hāmeʻa.
Pākuʻi hoʻokele
Conductive substrate: Ma ka wehe ʻana i nā mea haumia like ʻole i loko o ke aniani, ʻoi aku ka maikaʻi o nā haumia pae pāpaʻu, e hoʻokō i ka resistivity kiʻekiʻe intrinsic o ke aniani.
Conductiveʻāpana kalapona silikaSiC wafer
Conductive silicon carbide mana mea ma o ka ulu ana o ka silicon carbide epitaxial layer ma ka conductive substrate, ka silicon carbide epitaxial sheet e hana hou ʻia, me ka hana ʻana o Schottky diodes, MOSFET, IGBT, etc., i hoʻohana nui ʻia i nā kaʻa uila, ka mana photovoltaic. hanauna, kaʻa kaʻaahi, ke kikowaena ʻikepili, ka hoʻouka ʻana a me nā ʻoihana ʻē aʻe. ʻO nā pōmaikaʻi hana penei:
Hoʻonui i nā hiʻohiʻona kiʻekiʻe. ʻOi aku ka ikaika o ke kahua uila o ka silicon carbide ma mua o 10 mau manawa o ke silika, kahi e ʻoi aku ai ka kiʻekiʻe o ke kūpaʻa kiʻekiʻe o nā mea hana silicon carbide ma mua o nā mea like.
ʻOi aku ka maikaʻi o nā ʻano wela kiʻekiʻe. ʻOi aku ka nui o ka conductivity thermal o ka silikoni ma mua o ke silika, kahi e maʻalahi ai ka hoʻokuʻu ʻana o ka wela o ka hāmeʻa a ʻoi aku ka kiʻekiʻe o ka wela o ka hana. Hiki i ke kū'ē wela kiʻekiʻe ke alakaʻi i ka piʻi nui ʻana o ka nui o ka mana, ʻoiai e hōʻemi ana i nā koi ma ka ʻōnaehana hoʻomaha, i hiki ai i ka terminal ke maʻalahi a me ka miniaturized.
E emi iho ka ikehu. ① He haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa loa ka mea carbide silikon; (2) ʻO ka leakage o nā mea hana silicon carbide ua hoʻemi nui ʻia ma mua o nā mea hana silika, ma laila e hōʻemi ai i ka nalowale o ka mana; ③ ʻAʻohe ʻano hiʻohiʻona i kēia manawa i ke kaʻina hoʻohuli ʻana o nā mīkini carbide silicon, a haʻahaʻa ka nalowale o ka hoʻololi ʻana, e hoʻomaikaʻi nui ana i ke alapine hoʻololi o nā noi kūpono.
Semi-insulated SiC substrate: N doping ua hoʻohana ʻia e hoʻomalu pono i ka resistivity o nā huahana conductive ma ka calibrating i ka pilina pili ma waena o ka neʻe ʻana o ka doping nitrogen, ka ulu ulu a me ka resistivity kristal.
Mea hoʻomaʻemaʻe semi-insulating substrate kiʻekiʻe
Hana ʻia nā mea hana RF e pili ana i ka carbon nitride semi-insulated e ka ulu ʻana i ka gallium nitride epitaxial layer ma ka semi-insulated silicon carbide substrate e hoʻomākaukau ai i ka pepa silicon nitride epitaxial, me HEMT a me nā mea gallium nitride RF ʻē aʻe, i hoʻohana nui ʻia i nā kamaʻilio 5G, kamaʻilio kaʻa, nā noi pale, hoʻoili ʻikepili, aerospace.
He 2.0 a me 2.5 manawa ka nui o ka saturated electron drift o ka silicon carbide a me ka gallium nitride, no laila, ʻoi aku ka nui o ka hana ʻana o nā mea hana silicon carbide a me ka gallium nitride ma mua o nā mea hana maʻamau. Eia nō naʻe, ʻo ka gallium nitride material ka hemahema o ka maikaʻi ʻole o ka wela, ʻoiai ʻo ka silicon carbide maikaʻi ka wela wela a me ka thermal conductivity, hiki ke hana i ka pale wela maikaʻi ʻole o nā mea gallium nitride, no laila lawe ka ʻoihana i ka carbide silicon semi-insulated e like me ka substrate. , a ua ulu ʻia ka papa epitaxial ma ka substrate carbide silicon e hana i nā mea RF.
Inā loaʻa ka hewa, hoʻopau i ke kelepona
Ka manawa hoʻouna: Jul-16-2024