He aha ka ʻokoʻa ma waena o ka substrate conductive SiC a me ka substrate semi-insulated?

ʻO ke kalapona silicon SiCʻO ka hāmeʻa e pili ana i ka hāmeʻa i hana ʻia me ka silicon carbide ma ke ʻano he mea maka.

Wahi a nā waiwai kū'ē like ʻole, ua māhele ʻia i nā mea hana mana silicon carbide conductive asilicon carbide hapalua-insulatedNā hāmeʻa RF.

Nā ʻano hana nui a me nā noi o ka silicon carbide

ʻO nā pono nui o SiC ma luna oNā mea Siʻo:

ʻEkolu manawa ka nui o ka hakahaka o ke kāʻei o SiC ma mua o Si, hiki ke hōʻemi i ka leakage a hoʻonui i ka hoʻomanawanui i ka mahana.

ʻO ka ikaika o ke kahua haki he 10 manawa o SiC, hiki ke hoʻomaikaʻi i ka nui o kēia manawa, ka alapine hana, kū i ka mana voltage a hoʻemi i ka pohō on-off, ʻoi aku ka kūpono no nā noi voltage kiʻekiʻe.

ʻElua ka wikiwiki o ka electron saturation drift o SiC ma mua o Si, no laila hiki iā ia ke hana ma kahi alapine kiʻekiʻe.

ʻEkolu manawa ka conductivity thermal o SiC ma mua o Si, ʻoi aku ka maikaʻi o ka hana hoʻoheheʻe wela, hiki ke kākoʻo i ka nui o ka mana a hōʻemi i nā koi hoʻoheheʻe wela, e hoʻomāmā ai i ka hāmeʻa.

ʻO ka mea hoʻokele alakaʻi

ʻO ka substrate conductive: Ma ka wehe ʻana i nā haumia like ʻole i loko o ke kristal, ʻoi aku ka haumia o ka pae pāpaʻu, e hoʻokō ai i ke kū'ē kiʻekiʻe o ke kristal.

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Alakaʻisubstrate carbide siliconWafer SiC

ʻO ka mea hana mana silicon carbide conductive ma o ka ulu ʻana o ka papa epitaxial silicon carbide ma luna o ka substrate conductive, ua hana hou ʻia ka pepa epitaxial silicon carbide, me ka hana ʻana o nā diode Schottky, MOSFET, IGBT, a me nā mea ʻē aʻe, i hoʻohana nui ʻia i nā kaʻa uila, ka hana mana photovoltaic, ke kaʻaahi kaʻaahi, ke kikowaena ʻikepili, ka hoʻouka ʻana a me nā ʻoihana ʻē aʻe. Eia nā pono hana:

Hoʻonui ʻia nā ʻano kaomi kiʻekiʻe. ʻOi aku ka ikaika o ke kahua uila haki o ka silicon carbide ma mua o 10 mau manawa o ka silicon, ʻo ia hoʻi ka mea e ʻoi aku ai ke kū'ē ʻana o ke kaomi kiʻekiʻe o nā mea silicon carbide ma mua o nā mea silicon like.

ʻOi aku ka maikaʻi o nā ʻano wela kiʻekiʻe. ʻOi aku ka kiʻekiʻe o ka conductivity thermal o ka Silicon carbide ma mua o ka silicon, kahi e maʻalahi ai ka hoʻoheheʻe ʻana o ka wela o ka hāmeʻa a ʻoi aku ka kiʻekiʻe o ka mahana hana. Hiki i ke kū'ē wela kiʻekiʻe ke alakaʻi i ka hoʻonui nui ʻana i ka mana o ka mana, me ka hoʻemi ʻana i nā koi ma ka ʻōnaehana hoʻoluʻu, i hiki ai i ke kikowaena ke māmā a liʻiliʻi.

Hoʻemi ʻia ka hoʻohana ʻana i ka ikehu. ① He haʻahaʻa loa ke kū'ē ʻana o ka hāmeʻa carbide Silicon a haʻahaʻa ka pohō; (2) Ua emi nui ke au leaka o nā hāmeʻa carbide silicon ma mua o nā hāmeʻa silicon, no laila e hōʻemi ana i ka pohō mana; ③ ʻAʻohe hanana tailing au i ke kaʻina hana pio o nā hāmeʻa carbide silicon, a haʻahaʻa ka pohō hoʻololi, kahi e hoʻomaikaʻi nui ai i ke alapine hoʻololi o nā noi hana.

ʻO ka substrate SiC semi-insulated

ʻO ka substrate SiC Semi-insulated: Hoʻohana ʻia ka N doping e kāohi pololei i ka resistivity o nā huahana conductive ma ka calibrating i ka pilina pili ma waena o ka nui o ka doping nitrogen, ka wikiwiki o ka ulu ʻana a me ka resistivity kristal.

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Mea substrate semi-insulating maʻemaʻe kiʻekiʻe

Hana hou ʻia nā mea RF e pili ana i ka silicon carbon-based semi-insulated ma ka hoʻoulu ʻana i ka papa epitaxial gallium nitride ma luna o ka substrate silicon carbide semi-insulated e hoʻomākaukau i ka pepa epitaxial silicon nitride, me HEMT a me nā mea hana RF gallium nitride ʻē aʻe, i hoʻohana nui ʻia i nā kamaʻilio 5G, nā kamaʻilio kaʻa, nā noi pale, ka hoʻouna ʻikepili, aerospace.

ʻO ka nui o ka hoʻoneʻe ʻana o nā mea silicon carbide a me gallium nitride he 2.0 a me 2.5 mau manawa o ka silicon, no laila ʻoi aku ka nui o ka hana o nā mea silicon carbide a me gallium nitride ma mua o nā mea silicon kuʻuna. Eia nō naʻe, ʻo ka hemahema o ka mea gallium nitride he pale wela maikaʻi ʻole, ʻoiai he pale wela maikaʻi ko ka silicon carbide a me ka conductivity thermal, hiki ke hoʻopiha no ka pale wela maikaʻi ʻole o nā mea gallium nitride, no laila lawe ka ʻoihana i ka silicon carbide semi-insulated ma ke ʻano he substrate, a ua ulu ʻia ka papa epitaxial gan ma ka substrate silicon carbide e hana i nā mea RF.

Inā he hewa, e holoi i ka hoʻokaʻaʻike


Ka manawa hoʻouna: Iulai-16-2024