ʻO ka Sapphire he aniani hoʻokahi o ka alumina, nona ka ʻōnaehana kristal tripartite, ʻano hexagonal, ʻo kona ʻano aniani i haku ʻia me ʻekolu mau oxygen a me ʻelua mau alumina i loko o ke ʻano covalent bond, i hoʻonohonoho pono ʻia, me ke kaulahao paʻa ikaika a me ka ikehu lattice, ʻoiai ʻo ia. ʻaʻohe mea haumia a i ʻole nā kīnā ʻole, no laila, loaʻa iā ia ka insulation uila maikaʻi loa, transparency, maikaʻi thermal conductivity a me nā hiʻohiʻona rigidity kiʻekiʻe. Hoʻohana nui ʻia e like me ka puka aniani a me nā mea substrate hana kiʻekiʻe. Eia nō naʻe, paʻakikī ka molecular structure o ka sapphire a aia ka anisotropy, a he ʻokoʻa loa ka hopena i nā waiwai kino kūpono no ka hana ʻana a me ka hoʻohana ʻana i nā kuhikuhi aniani like ʻole, no laila ʻokoʻa ka hoʻohana ʻana. Ma keʻano laulā, loaʻa nā substrate sapphire ma nā kuhikuhi mokulele C, R, A a me M.
ʻO ka noi oC-plane sapphire wafer
ʻO Gallium nitride (GaN) ma ke ʻano he bandgap ākea ʻekolu o ka hanauna semiconductor, loaʻa i kahi ākea ākea ākea, paʻa atomika ikaika, conductivity thermal kiʻekiʻe, kūpaʻa kemika maikaʻi (aneane ʻaʻole i ʻino ʻia e kekahi waikawa) a me ka ikaika anti-irradiation ikaika, a he ākea ākea ka hoʻohana ʻana i nā optoelectronics, kiʻekiʻe kiʻekiʻe a me nā mana mana a me nā mīkini microwave kiʻekiʻe. Eia naʻe, ma muli o ke kiʻekiʻe heheʻe o GaN, paʻakikī ka loaʻa ʻana o nā mea aniani hoʻokahi nui, no laila ʻo ke ala maʻamau e hoʻokō i ka ulu heteroepitaxy ma luna o nā substrate ʻē aʻe, ʻoi aku ka nui o nā koi no nā mea substrate.
Hoʻohālikelike ʻia me kasapphire substrateme nā helehelena aniani ʻē aʻe, ʻoi aku ka liʻiliʻi o ka lattice ma waena o ka C-plane (<0001> orientation) sapphire wafer a me nā kiʻiʻoniʻoni i waiho ʻia ma nā hui Ⅲ-Ⅴ a me Ⅱ-Ⅵ (e like me GaN) he liʻiliʻi, a ʻo ka lattice like ʻole. rate ma waena o nā mea ʻelua a me kaNā kiʻiʻoniʻoni AlNhiki ke hoʻohana ʻia ma ke ʻano he ʻoi aku ka liʻiliʻi o ka papa buffer, a hoʻokō i nā koi o ke kūpaʻa wela kiʻekiʻe i ke kaʻina hana crystallization GaN. No laila, he mea substrate maʻamau no ka ulu ʻana o GaN, hiki ke hoʻohana ʻia e hana i nā led keʻokeʻo / uliuli / ʻōmaʻomaʻo, laser diodes, infrared detectors a pēlā aku.
He mea kūpono ke ʻōlelo ʻia ʻo ke kiʻiʻoniʻoni GaN i ulu ma ka C-plane sapphire substrate e ulu ana ma kona axis polar, ʻo ia hoʻi, ke kuhikuhi o ka C-axis, ʻaʻole ia wale nō ke kaʻina ulu ulu a me ke kaʻina epitaxy, haʻahaʻa haʻahaʻa, kūpaʻa kino. a me nā waiwai kemika, akā ʻoi aku ka maikaʻi o ka hana ʻana. Hoʻopaʻa ʻia nā ʻātoma o ka wafer sapphire C-oriented i kahi hoʻonohonoho O-al-al-o-al-O, aʻo nā kristal sapphire M-oriented a me A-oriented i hoʻopaʻa ʻia ma al-O-al-O. No ka mea he haʻahaʻa ka ikehu hoʻopaʻa ʻana o Al-Al a ʻoi aku ka nāwaliwali o ka hoʻopaʻa ʻana ma mua o Al-O, ke hoʻohālikelike ʻia me nā kristal sapphire M-oriented a me A-oriented, ʻO ka hana ʻana o C-sapphire ka mea nui e wehe i ke kī Al-Al, ʻoi aku ka maʻalahi o ka hana. , a hiki ke kiʻi i ka maikaʻi o ka ʻili, a laila loaʻa ka maikaʻi o ka gallium nitride epitaxial maikaʻi, hiki ke hoʻomaikaʻi i ka maikaʻi o ke kukui ultra-kiʻekiʻe keʻokeʻo / uliuli LED. Ma ka ʻaoʻao ʻē aʻe, ʻo nā kiʻiʻoniʻoni i ulu ʻia ma ka C-axis he mau hopena polarization piezoelectric a me ka piezoelectric polarization, ka hopena i kahi kahua uila kūloko ikaika i loko o nā kiʻiʻoniʻoni (active layer quantum Wells), kahi e hōʻemi nui ai i ka pono luminous o nā kiʻiʻoniʻoni GaN.
A-plane sapphire waferpalapala noi
Ma muli o kāna hana piha maikaʻi loa, ʻoi aku ka maikaʻi o ka transmittance, hiki i ka sapphire single crystal ke hoʻonui i ka hopena infrared penetration, a lilo i mea kūpono i waena o ka infrared window material, i hoʻohana nui ʻia i nā lako photoelectric pūʻali koa. ʻO kahi sapphire he polar plane (C plane) ma ka ʻaoʻao maʻamau o ka maka, he ʻili polar ʻole. ʻO ka maʻamau, ʻoi aku ka maikaʻi o ka kristal sapphire A-oriented ma mua o ka C-oriented crystal, me ka liʻiliʻi o ka dislocation, ka liʻiliʻi o ka Mosaic a me ka ʻoi aku ka piha ʻana o ke aniani kristal, no laila ʻoi aku ka maikaʻi o ka hoʻouna ʻana i ka māmā. Ma ka manawa like, ma muli o ke ʻano Al-O-Al-O atomic bonding mode ma luna o ka mokulele a, ʻoi aku ka kiʻekiʻe o ka paʻakikī a me ka pale ʻana o ka sapphire A-oriented ma mua o ka sapphire C-oriented. No laila, hoʻohana nui ʻia nā ʻāpana A-directional e like me nā mea puka makani; Eia kekahi, ua loaʻa i kahi sapphire ke ʻano dielectric mau a me nā waiwai insulation kiʻekiʻe, no laila hiki ke hoʻopili ʻia i ka ʻenehana microelectronics hybrid, akā no ka ulu ʻana o nā conductors superb, e like me ka hoʻohana ʻana o TlBaCaCuO (TbBaCaCuO), Tl-2212, ka ulu ʻana. o nā kiʻiʻoniʻoni superconducting epitaxial heterogeneous ma ka cerium oxide (CeO2) sapphire composite substrate. Eia nō naʻe, ma muli o ka ikehu paʻa nui o Al-O, ʻoi aku ka paʻakikī o ka hana.
Noi oR /M mokulele sapphire wafer
ʻO ka R-plane ka ili non-polar o kahi sapphire, no laila, ʻo ka hoʻololi ʻana i ke kūlana R-plane i kahi mea sapphire e hāʻawi iā ia i nā ʻano mechanical, thermal, uila, a me ka optical. Ma keʻano laulā, makemake ʻia ka substrate sapphire R-surface no ka heteroepitaxial deposition o ke silika, ka mea nui no ka semiconductor, microwave a me nā microelectronics integrated circuit applications, i ka hana ʻana o ke alakaʻi, nā ʻāpana superconducting ʻē aʻe, nā mea kūʻē kūʻē kiʻekiʻe, gallium arsenide hiki ke hoʻohana ʻia no R- ʻano ulu substrate. I kēia manawa, me ka kaulana o nā kelepona akamai a me nā ʻōnaehana kamepiula papa, ua hoʻololi ka substrate sapphire R-face i nā mea hana SAW pūhui i hoʻohana ʻia no nā kelepona akamai a me nā kamepiula papa, e hāʻawi ana i kahi substrate no nā mea hiki ke hoʻomaikaʻi i ka hana.
Inā loaʻa ka hewa, hoʻopau i ke kelepona
Ka manawa hoʻouna: Iulai-16-2024