He kristal hoʻokahi ʻo Sapphire o ka alumina, no ka ʻōnaehana kristal tripartite, ʻano hexagonal, ua haku ʻia kona ʻano kristal me ʻekolu mau ʻātoma oxygen a me ʻelua mau ʻātoma alumini i ke ʻano pilina covalent, i hoʻonohonoho pono ʻia, me ke kaulahao hoʻopaʻa ikaika a me ka ikehu lattice, ʻoiai ʻaneʻane ʻaʻohe haumia a kīnā paha o loko o kona kristal, no laila he insulation uila maikaʻi loa, transparency, conductivity thermal maikaʻi a me nā ʻano paʻakikī kiʻekiʻe. Hoʻohana nui ʻia e like me ka puka makani optical a me nā mea substrate hana kiʻekiʻe. Eia nō naʻe, he paʻakikī ke ʻano molekala o ka sapphire a aia ka anisotropy, a ʻokoʻa loa ka hopena i nā waiwai kino e pili ana no ka hana ʻana a me ka hoʻohana ʻana i nā kuhikuhi kristal like ʻole, no laila ʻokoʻa hoʻi ka hoʻohana ʻana. Ma ke ʻano laulā, loaʻa nā substrates sapphire ma nā kuhikuhi mokulele C, R, A a me M.
ʻO ka hoʻopili ʻana oʻO ka wafer sapeiro C-plane
ʻO Gallium nitride (GaN) ma ke ʻano he semiconductor hanauna ʻekolu ākea bandgap, he ākea ka band gap pololei, ka pilina atomika ikaika, ka conductivity thermal kiʻekiʻe, ke kūpaʻa kemika maikaʻi (ʻaneʻane ʻaʻole i popopo ʻia e kekahi waikawa) a me ka hiki ke pale i ka irradiation ikaika, a he mau manaʻolana ākea i ka hoʻohana ʻana i nā optoelectronics, nā mea mahana kiʻekiʻe a me nā mea mana a me nā mea microwave alapine kiʻekiʻe. Eia nō naʻe, ma muli o ke kiko heheʻe kiʻekiʻe o GaN, he paʻakikī ke loaʻa nā mea kristal hoʻokahi nui, no laila ʻo ke ala maʻamau ka hoʻokō ʻana i ka ulu ʻana o ka heteroepitaxy ma nā substrates ʻē aʻe, nona nā koi kiʻekiʻe no nā mea substrate.
Hoʻohālikelike ʻia me kaʻāpana sapeirome nā helehelena kristal ʻē aʻe, ʻo ka nui o ka mismatch constant lattice ma waena o ka wafer sapphire C-plane (<0001> orientation) a me nā kiʻiʻoniʻoni i waiho ʻia ma nā hui Ⅲ-Ⅴ a me Ⅱ-Ⅵ (e like me GaN) he liʻiliʻi iki ia, a ʻo ka nui o ka mismatch constant lattice ma waena o nā mea ʻelua a me kaNā kiʻiʻoniʻoni AlNʻoi aku ka liʻiliʻi o ka mea hiki ke hoʻohana ʻia ma ke ʻano he papa buffer, a hoʻokō ia i nā koi o ke kū'ē ʻana i ka mahana kiʻekiʻe i ke kaʻina hana crystallization GaN. No laila, he mea substrate maʻamau ia no ka ulu ʻana o GaN, hiki ke hoʻohana ʻia e hana i nā leds keʻokeʻo/polū/'ōmaʻomaʻo, nā diode laser, nā mea ʻike infrared a pēlā aku.
He mea kūpono ke haʻi ʻia ʻo ka ʻili GaN i ulu ʻia ma ka substrate sapphire C-plane e ulu ana ma kona axis polar, ʻo ia hoʻi, ke kuhikuhi o ke axis C, ʻaʻole wale ke kaʻina ulu makua a me ke kaʻina epitaxy, ke kumukūʻai haʻahaʻa, nā waiwai kino a me nā kemika paʻa, akā ʻoi aku ka maikaʻi o ka hana ʻana. Hoʻopaʻa ʻia nā ʻātoma o ka wafer sapphire C-oriented i loko o kahi hoʻonohonoho O-al-al-o-al-O, ʻoiai ʻo nā kristal sapphire M-oriented a me A-oriented i hoʻopaʻa ʻia i loko o al-O-al-O. No ka mea, ʻoi aku ka haʻahaʻa o ka ikehu hoʻopaʻa ʻana o Al-Al a me ka nāwaliwali o ka hoʻopaʻa ʻana ma mua o Al-O, i hoʻohālikelike ʻia me nā kristal sapphire M-oriented a me A-oriented, ʻo ka hana ʻana o C-sapphire ke wehe nui i ke kī Al-Al, ʻoi aku ka maʻalahi o ka hana ʻana, a hiki ke loaʻa ka maikaʻi o ka ʻili kiʻekiʻe, a laila loaʻa ka maikaʻi o ka gallium nitride epitaxial, hiki ke hoʻomaikaʻi i ka maikaʻi o ka LED keʻokeʻo/uliuli ʻōlinolino kiʻekiʻe. Ma ka ʻaoʻao ʻē aʻe, ʻo nā kiʻiʻoniʻoni i ulu ma ka axis C he mau hopena polarization spontaneous a me piezoelectric, e hopena ana i kahi kahua uila kūloko ikaika i loko o nā kiʻiʻoniʻoni (active layer quantum Wells), kahi e hoʻemi nui ai i ka pono luminous o nā kiʻiʻoniʻoni GaN.
ʻO ka wafer sapeiro A-planenoi
Ma muli o kāna hana piha maikaʻi loa, ʻoi aku ka maikaʻi o ka transmittance, hiki i ka kristal sapphire hoʻokahi ke hoʻonui i ka hopena komo infrared, a lilo i mea puka makani mid-infrared kūpono, kahi i hoʻohana nui ʻia i nā lako photoelectric koa. Ma kahi o A sapphire he mokulele polar (C plane) ma ke kuhikuhi maʻamau o ka maka, he ʻili non-polar. Ma keʻano laulā, ʻoi aku ka maikaʻi o ke ʻano o ka kristal sapphire A-oriented ma mua o ke kristal C-oriented, me ka liʻiliʻi o ka dislocation, ka liʻiliʻi o ka Mosaic structure a me ka piha o ka crystal structure, no laila he ʻoi aku ka maikaʻi o ka hoʻouna ʻana o ka mālamalama. I ka manawa like, ma muli o ke ʻano hoʻopaʻa atomika Al-O-Al-O ma ka mokulele a, ʻoi aku ka kiʻekiʻe o ka paʻakikī a me ke kū'ē ʻana o ka sapphire A-oriented ma mua o ka sapphire C-oriented. No laila, hoʻohana nui ʻia nā ʻāpana A-directional e like me nā mea puka makani; Eia kekahi, loaʻa iā A sapphire kahi dielectric constant like a me nā waiwai insulation kiʻekiʻe, no laila hiki ke hoʻopili ʻia i ka ʻenehana microelectronics hybrid, akā no ka ulu ʻana o nā alakaʻi maikaʻi loa, e like me ka hoʻohana ʻana o TlBaCaCuO (TbBaCaCuO), Tl-2212, ka ulu ʻana o nā kiʻiʻoniʻoni superconducting epitaxial heterogeneous ma ka cerium oxide (CeO2) sapphire composite substrate. Eia nō naʻe, ma muli o ka ikehu hoʻopaʻa nui o Al-O, ʻoi aku ka paʻakikī o ka hana ʻana.
Hoʻohana ʻia oʻO ka wafer sapeiro mokulele R /M
ʻO ka R-plane ka ʻili non-polar o kahi sapphire, no laila ʻo ka hoʻololi ʻana i ke kūlana R-plane i loko o kahi hāmeʻa sapphire e hāʻawi iā ia i nā waiwai mechanical, thermal, electrical, a me optical like ʻole. Ma keʻano laulā, makemake ʻia ka substrate sapphire R-surface no ka hoʻokaʻawale heteroepitaxial o ka silicon, ʻo ia hoʻi no nā noi semiconductor, microwave a me microelectronics integrated circuit, i ka hana ʻana o ke kēpau, nā ʻāpana superconducting ʻē aʻe, nā resistors kū'ē kiʻekiʻe, hiki ke hoʻohana ʻia ka gallium arsenide no ka ulu ʻana o ka substrate R-type. I kēia manawa, me ka kaulana o nā kelepona akamai a me nā ʻōnaehana kamepiula papa, ua pani ka substrate sapphire R-face i nā hāmeʻa SAW hui i hoʻohana ʻia no nā kelepona akamai a me nā kamepiula papa, e hāʻawi ana i kahi substrate no nā hāmeʻa e hiki ke hoʻomaikaʻi i ka hana.
Inā he hewa, e holoi i ka hoʻokaʻaʻike
Ka manawa hoʻouna: Iulai-16-2024