2 iniha 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Manoanoa 350um 430um 500um

2 iniha 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Manoanoa 350um 430um 500um Kiʻi Hōʻikeʻike

ʻO ka wehewehe pōkole:

ʻO ka Sapphire kahi mea o kahi hui kūʻokoʻa o nā waiwai kino, kemika a me ka optical, kahi e pale ai i ka wela kiʻekiʻe, ka haʻalulu wela, ka wai a me ke one, a me ka ʻoki ʻana.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Huahana Huahana

ʻO ka wehewehe ʻana o nā ʻano ʻokoʻa

Kūlana	C(0001)-Axis		R(1-102)-Axis		M(10-10) -Axis	A(11-20)-Axis
Waiwai kino	He kukui aniani ko ke ko'i C, a he kukui ino ko na ko'i e ae.Paha ka mokulele C, ʻoi aku ka maikaʻi e ʻoki.		ʻOi aku ka paʻakikī o ka mokulele R ma mua o A.		M plane is stepped serrated, ʻaʻole maʻalahi e ʻoki, maʻalahi e ʻoki.	ʻOi aku ka kiʻekiʻe o ka paʻakikī o ka mokulele A ma mua o ka C-plane, ka mea i hōʻike ʻia i ka pale ʻana i ka lole, ke kūʻē ʻana a me ka paʻakikī kiʻekiʻe;ʻO ka ʻaoʻao A-plane he mokulele zigzag, maʻalahi ke ʻoki;
Nā noi	Hoʻohana ʻia nā substrates sapphire C-oriented e ulu i nā kiʻiʻoniʻoni III-V a me II-VI i waiho ʻia, e like me ka gallium nitride, hiki ke hana i nā huahana polū LED, laser diodes, a me nā noi infrared detector. ʻO ka mea nui kēia ma muli o ke kaʻina o ka ulu ʻana o ke aniani sapphire ma ka C-axis he oʻo, haʻahaʻa ke kumu kūʻai, paʻa ke kino a me nā waiwai kemika, a ʻo ka ʻenehana o ka epitaxy ma ka C-plane he oʻo a paʻa.		R-oriented substrate ulu o nā ʻokoʻa silicon extrasystals, hoʻohana ʻia i nā microelectronics integrated circuits. Eia kekahi, hiki ke hoʻokumu ʻia nā kaʻa hoʻohui kiʻekiʻe a me nā mea ʻike kaomi i ke kaʻina hana kiʻiʻoniʻoni o ka ulu ʻana o ka silicon epitaxial.Hiki ke hoʻohana ʻia ka substrate R-type i ka hana ʻana o ke alakaʻi, nā ʻāpana superconducting ʻē aʻe, nā mea pale pale kiʻekiʻe, gallium arsenide.		Hoʻohana nui ʻia e ulu i nā kiʻi ʻoniʻoni epitaxial non-polar/semi-polar GaN e hoʻomaikaʻi i ka pono luminous.	Hoʻokumu ʻia ka A-oriented i ka substrate i kahi permittivity / medium, a hoʻohana ʻia kahi kiʻekiʻe o ka insulation i ka ʻenehana microelectronics hybrid.Hiki ke hana ʻia nā superconductors kiʻekiʻe mai nā kristal elongated A-base.
Hiki ke hana	Pattern Sapphire Substrate (PSS): Ma ke ʻano o ka Growth a i ʻole Etching, ua hoʻolālā ʻia a hana ʻia nā ʻano microstructure maʻamau nanoscale ma luna o ka substrate sapphire e hoʻomalu i ke ʻano puka māmā o ka LED, a e hōʻemi i nā hemahema ʻokoʻa ma waena o GaN e ulu ana ma ka substrate sapphire. , hoʻomaikaʻi i ka maikaʻi o ka epitaxy, a hoʻonui i ka pono quantum kūloko o ka LED a hoʻonui i ka pono o ka lawe ʻana i ka māmā. Eia kekahi, hiki ke hoʻopilikino ʻia ka sapphire prism, aniani, lens, hole, cone a me nā ʻāpana ʻē aʻe e like me nā koi o ka mea kūʻai aku.
Hoʻolaha waiwai	ʻO ka mānoanoa	ʻoʻoleʻa	wahi hehee	Hōʻike kuhikuhi (ʻike ʻia a me ka infrared)	Ka lawe ʻana (DSP)	Dielectric mau
Hoʻolaha waiwai	3.98g/cm3	9 (mohs)	2053 ℃	1.762~1.770	≥85%	11.58@300K ma C axis(9.4 ma A axis)

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Mua: 8 Iniha Lithium Niobate Wafer LiNbO3 LN wafer

Aʻe: 2 iniha 50.8mm Manoanoa 0.1mm 0.2mm 0.43mm Sapphire Wafer C-Plane M-plane R-plane A-plane

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