8Inch 200mm 4H-N SiC Wafer Conductive dummy papa noiʻi

ʻO ka wehewehe pōkole:

Ke ulu nei ka lawe ʻana, ka ikehu a me nā mākeke ʻoihana, ke hoʻomau nei ka ulu ʻana o ka noi no nā uila uila hilinaʻi.No ka hoʻokō ʻana i nā pono no ka hoʻomaikaʻi ʻana i ka hana semiconductor, ke ʻimi nei nā mea hana i nā mea semiconductor bandgap ākea, e like me kā mākou 4H SiC Prime Grade portfolio o 4H n -type silicon carbide (SiC) wafers.


Huahana Huahana

Huahana Huahana

Ma muli o kāna mau waiwai kino a me ka uila, hoʻohana ʻia ka 200mm SiC wafer semiconductor material e hana i nā mea uila kiʻekiʻe, kiʻekiʻe-mehana, radiation-resistant, a me nā mea uila uila kiʻekiʻe.Ke emi mālie nei ke kumukūʻai substrate 8inch SiC i ka ulu ʻana o ka ʻenehana a ulu ka noi.Ke alakaʻi nei nā hoʻomohala ʻenehana hou i ka hana ʻana i ka nui o ka hana ʻana o 200mm SiC wafers.ʻO nā pōmaikaʻi nui o nā mea semiconductor wafer SiC i ka hoʻohālikelike ʻana me nā wafers Si a me GaAs: ʻO ka ikaika o ke kahua uila o 4H-SiC i ka wā o ka hāʻule ʻana o ka avalanche ʻoi aku ka nui ma mua o ka nui o nā waiwai kūpono no Si a me GaAs.Ke alakaʻi nei kēia i kahi emi nui o ka resistivity ma ka mokuʻāina ʻo Ron.ʻO ka resistivity haʻahaʻa ma ka mokuʻāina, i hui pū ʻia me ke kiʻekiʻe o kēia manawa a me ka conductivity thermal, hiki ke hoʻohana i ka make liʻiliʻi loa no nā mea mana.ʻO ka conductivity thermal kiʻekiʻe o SiC e hōʻemi i ka pale wela o ka chip.ʻO nā waiwai uila o nā mea i hoʻokumu ʻia i nā wafers SiC e paʻa loa i ka manawa a ma ka paʻa wela, kahi e hōʻoia ai i ka hilinaʻi kiʻekiʻe o nā huahana.Paʻa loa ʻo Silicon carbide i ka radiation paʻakikī, ʻaʻole ia e hoʻohaʻahaʻa i nā waiwai uila o ka chip.ʻO ka palena kiʻekiʻe o ka wela hana o ke aniani (ʻoi aku ma mua o 6000C) hiki iā ʻoe ke hana i nā mea hilinaʻi loa no nā kūlana hana paʻakikī a me nā noi kūikawā.I kēia manawa, hiki iā mākou ke hoʻolako i nā ʻāpana liʻiliʻi 200mmSiC wafers me ka hoʻomau mau a loaʻa kahi waiwai i loko o ka hale kūʻai.

Hōʻike

Helu 'ikamu Unite Hana ʻia Ka noiʻi Dummy
1. Nā ʻāpana
1.1 polytype -- 4H 4H 4H
1.2 hoʻonohonoho ʻili ° <11-20>4±0.5 <11-20>4±0.5 <11-20>4±0.5
2. Pilikino uila
2.1 dopant -- n-ʻano Nitrogen n-ʻano Nitrogen n-ʻano Nitrogen
2.2 kūʻē ohm ·cm 0.015~0.025 0.01~0.03 NA
3. Pilikino mīkini
3.1 anawaena mm 200±0.2 200±0.2 200±0.2
3.2 mānoanoa μm 500±25 500±25 500±25
3.3 ʻO ke kuhi notch ° [1- 100]±5 [1- 100]±5 [1- 100]±5
3.4 Hohonu Notch mm 1~1.5 1~1.5 1~1.5
3.5 LTV μm ≤5(10mm*10mm) ≤5(10mm*10mm) ≤10(10mm*10mm)
3.6 TTV μm ≤10 ≤10 ≤15
3.7 Kakaka μm -25~25 -45~45 -65~65
3.8 Warp μm ≤30 ≤50 ≤70
3.9 AFM nm Ra≤0.2 Ra≤0.2 Ra≤0.2
4. Kūlana
4.1 micropipe density ea/cm2 ≤2 ≤10 ≤50
4.2 mea metala nā ʻātoma/cm2 ≤1E11 ≤1E11 NA
4.3 TSD ea/cm2 ≤500 ≤1000 NA
4.4 BPD ea/cm2 ≤2000 ≤5000 NA
4.5 TED ea/cm2 ≤7000 ≤10000 NA
5. Ka maikaʻi maikaʻi
5.1 mua -- Si Si Si
5.2 hoʻopau ʻili -- Si-maka CMP Si-maka CMP Si-maka CMP
5.3 ʻāpana ea/wafer ≤100 (nui≥0.3μm) NA NA
5.4 ʻūlū ea/wafer ≤5, Ka huina Length≤200mm NA NA
5.5 Kaulana
chips/indents/cracks/stains/contamination
-- ʻAʻohe ʻAʻohe NA
5.6 Nā wahi polytype -- ʻAʻohe Wahi ≤10% Wahi ≤30%
5.7 hoailona mua -- ʻAʻohe ʻAʻohe ʻAʻohe
6. Ka maikaʻi hope
6.1 hope hope -- C-maka MP C-maka MP C-maka MP
6.2 ʻūlū mm NA NA NA
6.3 lihi hemahema hope
chips/indents
-- ʻAʻohe ʻAʻohe NA
6.4 ʻōkalakala kua nm Ra≤5 Ra≤5 Ra≤5
6.5 Kaha hope -- Notch Notch Notch
7. Kaulana
7.1 lihi -- Chamfer Chamfer Chamfer
8. Pūʻolo
8.1 pūʻulu -- Epi-mākaukau me ka vacuum
pūʻulu
Epi-mākaukau me ka vacuum
pūʻulu
Epi-mākaukau me ka vacuum
pūʻulu
8.2 pūʻulu -- Wafer nui
hoʻopaʻa cassette
Wafer nui
hoʻopaʻa cassette
Wafer nui
hoʻopaʻa cassette

Kiʻi kikoʻī

8 iniha SiC03
8 ʻīniha SiC4
8 ʻīniha SiC5
8 ʻīniha SiC6

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