150mm 6 ʻīniha 0.7mm 0.5mm Sapphire Wafer Substrate Ka lawe C-Plane SSP/DSP

ʻO ka wehewehe pōkole:

ʻO nā mea a pau i luna nei he wehewehe pololei o nā kristal sapphire.ʻO ka hana maikaʻi o ka sapphire crystal e hoʻohana nui ʻia i nā kahua ʻenehana kiʻekiʻe.Me ka hoʻomohala wikiwiki ʻana o ka ʻoihana LED, ke hoʻonui nei ka noi no nā mea kristal sapphire.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Nā noi

ʻO nā noi no nā wafers sapphire 6-ini:

1. LED manufacturing: hiki ke hoʻohana 'ia ka wafer sapphire e like me ka substrate o LED chips, a me kona paakiki a me ka thermal conductivity hiki ke hoʻoikaika i ka paʻa a me ka lawelawe ola o LED chips.

2. Laser manufacturing: Hiki ke hoʻohana ʻia ka wafer Sapphire ma ke ʻano he substrate o ka laser, e kōkua i ka hoʻomaikaʻi ʻana i ka hana o ka laser a hoʻolōʻihi i ke ola lawelawe.

3. Semiconductor manufacturing: Hoʻohana nuiʻia nā wafers Sapphire i ka hanaʻana i nā mea uila a me nā mea optoelectronic, me ka synthesis optical, nā pūnaewele solar, nā mea uila uila kiʻekiʻe, etc.

4. Nā noi ʻē aʻe: Hiki ke hoʻohana ʻia ka wafer Sapphire no ka hana ʻana i ka pale paʻi, nā mea optical, nā kiʻi ʻoniʻoni ʻoniʻoni solar a me nā huahana ʻenehana kiʻekiʻe.

Hōʻike

Mea waiwai	Kiʻekiʻe maʻemaʻe hoʻokahi aniani Al2O3, sapphire wafer.
Anana	150 mm +/- 0.05 mm, 6 iniha
mānoanoa	1300 +/- 25 um
Kūlana	mokulele C (0001) mai ka mokulele M (1-100) 0.2 +/- 0.05 degere
Kūlana palahalaha mua	He mokulele +/- 1 degere
Ka lōʻihi pālahalaha mua	47.5 mm +/- 1 mm
Huina Manoanoa (TTV)	<20 um
Kakaka	<25 um
Warp	<25 um
ʻO ka hoʻonui wela wela	6.66 x 10-6 / °C like me ke koʻi C, 5 x 10-6 /°C e kū pono ana i ke koʻi C.
Ka ikaika dielectric	4.8 x 105 V/cm
Dielectric mau	11.5 (1 MHz) ma ke koʻi C, 9.3 (1 MHz) e kū pono i ke koʻi C
Dielectric Loss Tangent (aka dissipation factor)	emi iho ma mua o 1 x 10-4
ʻO ka hoʻoili wela	40 W/(mK) ma 20 ℃
ʻO ka poni	ʻaoʻao hoʻokahi i poni ʻia (SSP) a i ʻole ʻaoʻao pālua i hoʻoliʻi ʻia (DSP) Ra <0.5 nm (e AFM).ʻO ka ʻaoʻao hope o ka wafer SSP he lepo maikaʻi i Ra = 0.8 - 1.2 um.
Ka lawe ʻana	88% +/-1 % @460 nm