He mea kakaikahi nā kristal hoʻokahi ma ke ʻano, a i ka wā e hiki mai ai, liʻiliʻi loa lākou - maʻamau ma ka pālākiō millimeter (mm) - a paʻakikī ke loaʻa. ʻO nā daimana i hōʻike ʻia, nā emeralds, agate, a me nā mea ʻē aʻe, ʻaʻole i komo i ke kaʻa ʻana ma ka mākeke, koe wale nō nā noi ʻoihana; hōʻike ʻia ka hapa nui ma nā hale hōʻikeʻike no ka hōʻikeʻike. Eia nō naʻe, paʻa kekahi mau kristal hoʻokahi i ka waiwai nui o ka ʻoihana, e like me ka silika kristal hoʻokahi i loko o ka ʻoihana kaapuni i hoʻohui ʻia, sapphire maʻamau i hoʻohana ʻia i nā lens optical, a me ka silicon carbide, e loaʻa ana ka manawa i nā semiconductors ekolu-hanauna. ʻO ka hiki ke hana nui i kēia mau kristal hoʻokahi i ka ʻoihana ʻaʻole i hōʻike wale i ka ikaika i ka ʻenehana ʻenehana a me ka ʻepekema akā he hōʻailona hoʻi ia o ka waiwai. ʻO ke koi nui no ka hana ʻana i ka kristal hoʻokahi i ka ʻoihana he nui nui, no ka mea he kī kēia i ka hōʻemi ʻana i nā kumukūʻai me ka maikaʻi. Ma lalo iho nei kekahi mau kristal hoʻokahi i ʻike pinepine ʻia ma ka mākeke:
1. Sapphire Single Crystal
ʻO ka Sapphire single crystal e pili ana i ka α-Al₂O₃, nona ka ʻōnaehana kristal hexagonal, kahi paʻakikī Mohs o 9, a me nā waiwai kemika paʻa. ʻAʻole hiki ke hoʻoheheʻe ʻia i nā wai corrosive acidic a i ʻole alkaline, kūpaʻa i nā wela kiʻekiʻe, a hōʻike i ka hoʻouna māmā maikaʻi, conductivity thermal, a me ka insulation uila.
Inā hoʻololi ʻia nā ʻona Al i loko o ke aniani e nā ion Ti a me Fe, ʻike ʻia ke aniani polū a kapa ʻia ʻo sapphire. Inā pani ʻia e nā ion Cr, ʻike ʻia ka ʻulaʻula a kapa ʻia ʻo ruby. Eia nō naʻe, ʻo ka sapphire ʻoihana he α-Al₂O₃ maʻemaʻe, kala ʻole a ʻākala, ʻaʻohe haumia.
ʻO ka sapphire ʻoihana ma ke ʻano he wafers, 400–700 μm mānoanoa a me 4-8 iniha ke anawaena. Ua ʻike ʻia kēia mau mea he wafers a ua ʻoki ʻia mai nā ingots aniani. Hōʻike ʻia ma lalo nei he ʻōnaʻi huki hou ʻia mai ka umu aniani hoʻokahi, ʻaʻole i ʻoki ʻia a ʻoki ʻia.
I ka makahiki 2018, ua ulu maikaʻi ʻo Jinghui Electronic Company ma Inner Mongolia i ka nui o ka 450 kg ultra-large-size sapphire crystal. ʻO ka kristal sapphire nui ma mua o ka honua he 350 kg kristal i hana ʻia ma Rūsia. E like me ka mea i ʻike ʻia ma ke kiʻi, he ʻano maʻamau kēia aniani, ʻaʻakaka piha, ʻaʻohe māwae a me nā palena palaoa, a he liʻiliʻi nā ʻōhū.
2. Hoʻokahi-Crystal Silicon
I kēia manawa, hoʻohana ʻia ka silikoni hoʻokahi-crystal no nā ʻāpana kaapuni hoʻohui i ka maʻemaʻe o 99.9999999% a i 99.999999999% (9-11 nines), a pono e mālama ʻia kahi kinona silika 420 kg i kahi ʻano kūpono e like me ke daimana. Ma ke ʻano, ʻaʻole i loaʻa kahi daimana hoʻokahi-carat (200 mg).
Hoʻokumu ʻia ka honua holoʻokoʻa o nā ingots silikoni hoʻokahi-crystal e ʻelima mau hui nui: ʻO Shin-Etsu o Iapana (28.0%), SUMCO o Iapana (21.9%), GlobalWafers o Taiwan (15.1%), SK Siltron o South Korea (11.6%), a me Siltronic o Kelemania (11.3%). ʻO ka mea hana wafer semiconductor nui loa ma ka ʻāina nui o Kina, ʻo NSIG, paʻa wale nō ma kahi o 2.3% o ka māhele mākeke. Eia naʻe, ma ke ʻano he mea hou, ʻaʻole pono e hoʻohaʻahaʻa ʻia kona hiki. Ma 2024, hoʻolālā ʻo NSIG e hoʻopukapuka i kahi papahana e hoʻomaikaʻi i ka 300 mm silicon wafer production no nā kaʻa hoʻohui, me ka huina kālā o ¥13.2 biliona.
Ma ke ʻano he mea maka no nā chips, ke ulu nei nā ingots silikoni maʻemaʻe kiʻekiʻe mai ka 6-ʻīniha a hiki i ka 12-ʻīniha anawaena. ʻO ke alakaʻi ʻana i nā mea hoʻokumu chip honua, e like me TSMC a me GlobalFoundries, ke hana nei i nā chips mai ka 12-inch silicon wafers i ka mākeke mainstream, aʻo ka 8-inch wafers e hoʻoneʻe mālie ʻia. Ke hoʻohana mau nei ke alakaʻi ʻāina ʻo SMIC i nā wafers 6 iniha. I kēia manawa, hiki i ka SUMCO o Iapana ke hana i nā substrates wafer 12-inihi kiʻekiʻe.
3. Gallium Arsenide
ʻO nā wafers Gallium arsenide (GaAs) kahi mea semiconductor koʻikoʻi, a ʻo ko lākou nui he mea koʻikoʻi i ka hana hoʻomākaukau.
I kēia manawa, hana maʻamau nā wafers GaAs i ka nui o 2 iniha, 3 iniha, 4 iniha, 6 iniha, 8 iniha, a me 12 iniha. Ma waena o kēia mau mea, ʻo nā wafers 6-inch kekahi o nā kikoʻī i hoʻohana nui ʻia.
ʻO ke anawaena kiʻekiʻe o nā kristal hoʻokahi i ulu ʻia e ke ʻano Horizontal Bridgman (HB) ma ke ʻano he 3 iniha, aʻo ke ʻano Liquid-Encapsulated Czochralski (LEC) hiki ke hana i nā kristal hoʻokahi a hiki i 12 iniha ke anawaena. Eia nō naʻe, koi ka ulu ʻana o LEC i nā kumukūʻai kiʻekiʻe a hāʻawi i nā kristal me ka like ʻole a me ka nui dislocation kiʻekiʻe. Hiki i ka Vertical Gradient Freeze (VGF) a me Vertical Bridgman (VB) ke hana i nā kristal hoʻokahi a hiki i ka 8 iniha ke anawaena, me ke ʻano like ʻole a me ka haʻahaʻa dislocation haʻahaʻa.
ʻO ka ʻenehana hana no ka 4-insulating a me 6-inch semi-insulating GaAs polished wafers ua haku nui ʻia e nā hui ʻekolu: Japan's Sumitomo Electric Industries, Germany's Freiberger Compound Materials, a me ka US's AXT. Ma ka makahiki 2015, ua helu ʻia nā substrates 6-inihi ma mua o 90% o ka māhele mākeke.
I ka makahiki 2019, ua hoʻomalu ʻia ka mākeke substrate GaAs honua e Freiberger, Sumitomo, a me Beijing Tongmei, me nā māhele mākeke o 28%, 21%, a me 13%. Wahi a nā manaʻo manaʻo e ka hui kūkākūkā ʻo Yole, kūʻai aku ka honua i nā substrate GaAs (i hoʻololi ʻia i 2-inch equivalents) ma kahi o 20 miliona mau ʻāpana i ka makahiki 2019 a ua manaʻo ʻia e ʻoi aku ma mua o 35 miliona mau ʻāpana e 2025. Ua kūʻai ʻia ka mākeke substrate GaAs honua ma kahi o $ 200 miliona ma 2019 a manaʻo ʻia e hiki i ka $ 3425 miliona o ka ulu ʻana o ka makahiki. 9.67% mai 2019 a 2025.
4. Silicon Carbide Hookahi Crystal
I kēia manawa, hiki i ka mākeke ke kākoʻo piha i ka ulu ʻana o 2-inch a me 3-inch diameter silicon carbide (SiC) single crystals. Nui nā hui i hōʻike i ka ulu kūleʻa ʻana o 4-inch 4H-type SiC single crystals, e hōʻailona ana i ka hoʻokō ʻana o Kina i nā pae papa honua i ka ʻenehana ulu kristal SiC. Eia nō naʻe, aia nō kahi ākea nui ma mua o ka hoʻolaha ʻana.
ʻO ka maʻamau, ʻuʻuku liʻiliʻi nā ingots SiC i ulu ʻia e nā ʻano wai-phase, me ka mānoanoa ma ka pae kenimika. ʻO kēia ke kumu no ke kumukūʻai kiʻekiʻe o nā wafers SiC.
Hoʻolaha ʻo XKH i ka R&D a me ka hana maʻamau o nā mea semiconductor koʻikoʻi, me ka saphire, silicon carbide (SiC), silicon wafers, a me nā seramika, e uhi ana i ke kaulahao waiwai piha mai ka ulu kristal a hiki i ka mīkini pololei. Ke hoʻohana nei i nā mana ʻoihana hoʻohui ʻia, hāʻawi mākou i nā wafers sapphire kiʻekiʻe, nā substrate silicon carbide, a me nā wafers silicon ultra-high-purity, i kākoʻo ʻia e nā hoʻonā i hoʻohālikelike ʻia e like me ka ʻoki maʻamau, ka uhi ʻana, a me ka hana geometry paʻakikī e hoʻokō i nā koi kūlohelohe i nā ʻōnaehana laser, nā noi semiconductor ikehu, a me ka hana hou.
E pili ana i nā kūlana maikaʻi, ʻo kā mākou huahana e hōʻike ana i ka pololei o ka micron-level,> 1500 ° C thermal stability, a me ke kūpaʻa corrosion kiʻekiʻe, e hōʻoia ana i ka hilinaʻi i nā kūlana hana paʻakikī. Hoʻohui ʻia, hāʻawi mākou i nā substrates quartz, nā mea metala / non-metallic, a me nā ʻāpana semiconductor-grade ʻē aʻe, e hiki ai ke hoʻololi i ka hoʻololi ʻana mai ka prototyping i ka hana nui no nā mea kūʻai aku ma nā ʻoihana.
Ka manawa hoʻouna: ʻAukake-29-2025