He mea kākaʻikahi nā kristal hoʻokahi ma ke ʻano, a inā loaʻa lākou, he liʻiliʻi loa lākou—maʻamau ma ka unahi millimeter (mm)—a paʻakikī ke loaʻa. ʻO nā daimana i hōʻike ʻia, nā emeralds, nā agates, a me nā mea ʻē aʻe, ʻaʻole i komo i ka mākeke, ʻaʻole hoʻi e haʻi i nā noi ʻoihana; hōʻike ʻia ka hapa nui ma nā hale hōʻikeʻike no ka hōʻike. Eia nō naʻe, loaʻa i kekahi mau kristal hoʻokahi ka waiwai nui o ka ʻoihana, e like me ka silicon kristal hoʻokahi i ka ʻoihana kaapuni hoʻohui, ka sapphire i hoʻohana pinepine ʻia i nā aniani optical, a me ka silicon carbide, ka mea e loaʻa nei ka ikaika i nā semiconductors hanauna ʻekolu. ʻO ka hiki ke hana nui i kēia mau kristal hoʻokahi ma ka ʻoihana ʻaʻole wale nō e hōʻike i ka ikaika i ka ʻenehana ʻoihana a me ka ʻepekema akā he hōʻailona hoʻi ia o ka waiwai. ʻO ke koi mua no ka hana ʻana i ka kristal hoʻokahi i ka ʻoihana he nui ka nui, no ka mea, he kī kēia i ka hōʻemi ʻana i nā kumukūʻai me ka maikaʻi. Aia ma lalo kekahi mau kristal hoʻokahi i loaʻa pinepine ʻia ma ka mākeke:
1. Sapphire Single Crystal
ʻO ke aniani sapphire hoʻokahi e pili ana i ka α-Al₂O₃, nona kahi ʻōnaehana aniani hexagonal, ka paʻakikī Mohs o 9, a me nā waiwai kemika paʻa. ʻAʻole hiki ke hoʻoheheʻe ʻia i loko o nā wai ʻawaʻawa a alkaline paha, kūpaʻa i nā mahana kiʻekiʻe, a hōʻike i ka hoʻoili mālamalama maikaʻi loa, ka conductivity thermal, a me ka insulation uila.
Inā pani ʻia nā iona Al i loko o ke aniani e nā iona Ti a me Fe, ʻike ʻia ke aniani he uliuli a kapa ʻia he sapeiro. Inā pani ʻia e nā iona Cr, ʻike ʻia he ʻulaʻula a kapa ʻia he ruby. Eia nō naʻe, ʻo ka sapeiro ʻoihana he α-Al₂O₃ maʻemaʻe, ʻaʻohe kala a moakaka, me ka ʻole o nā haumia.
ʻO ka sapeiro ʻoihana maʻamau ke ʻano o nā wafers, 400-700 μm ka mānoanoa a me 4-8 ʻīniha ke anawaena. Ua kapa ʻia kēia mau mea he mau wafers a ua ʻoki ʻia mai nā ingots kristal. Hōʻike ʻia ma lalo nei kahi ingot i huki hou ʻia mai kahi umu kristal hoʻokahi, ʻaʻole i hoʻopili ʻia a ʻoki ʻia paha.
I ka makahiki 2018, ua hoʻonui pono ʻo Jinghui Electronic Company ma Inner Mongolia i ka kristal sapeiro nui loa o ka honua he 450 kg. ʻO ka kristal sapeiro nui loa ma mua ma ka honua he kristal 350 kg i hana ʻia ma Rusia. E like me ka mea i ʻike ʻia ma ke kiʻi, he ʻano maʻamau kēia kristal, he moakaka loa, ʻaʻohe māwae a me nā palena palaoa, a he kakaikahi nā pehu.
2. Silika aniani hoʻokahi
I kēia manawa, ʻo ka silicon kristal hoʻokahi i hoʻohana ʻia no nā ʻāpana kaapuni hoʻohui ʻia he maʻemaʻe o 99.9999999% a i 99.999999999% (9-11 ʻeiwa), a pono i kahi ingot silicon 420 kg ke mālama i kahi ʻano kūpono e like me ke daimana. Ma ke ʻano, ʻoiai he daimana hoʻokahi-carat (200 mg) he mea kakaikahi.
ʻElima mau ʻoihana nui i hoʻomalu ʻia ka hana honua o nā ʻiʻo silicon kristal hoʻokahi: ʻo Shin-Etsu o Iapana (28.0%), ʻo SUMCO o Iapana (21.9%), ʻo GlobalWafers o Taiwan (15.1%), ʻo SK Siltron o Kōlea Hema (11.6%), a me Siltronic o Kelemania (11.3%). ʻOiai ka mea hana wafer semiconductor nui loa ma Kina nui, ʻo NSIG, nona wale nō ma kahi o 2.3% o ka māhele mākeke. Eia naʻe, ma ke ʻano he mea hou, ʻaʻole pono e hoʻohaʻahaʻa ʻia kona hiki. I ka makahiki 2024, hoʻolālā ʻo NSIG e hoʻokomo i kahi papahana e hoʻomaikaʻi i ka hana wafer silicon 300 mm no nā kaapuni i hoʻohui ʻia, me ka huina kālā i manaʻo ʻia he ¥13.2 biliona.
Ma ke ʻano he mea maka no nā ʻāpana liʻiliʻi, ke ulu nei nā ʻāpana silicon kristal hoʻokahi kiʻekiʻe mai ke anawaena 6-ʻīniha a i 12-ʻīniha. ʻO nā hale hana ʻāpana liʻiliʻi honua nui, e like me TSMC lāua ʻo GlobalFoundries, ke hana nei i nā ʻāpana liʻiliʻi mai nā wafer silicon 12-ʻīniha i mea nui ma ka mākeke, ʻoiai ke hoʻopau mālie ʻia nei nā wafer 8-ʻīniha. Hoʻohana nui ʻo SMIC, ke alakaʻi kūloko, i nā wafer 6-ʻīniha. I kēia manawa, ʻo SUMCO wale nō o Iapana ke hiki ke hana i nā substrates wafer 12-ʻīniha kiʻekiʻe.
3. Gallium Arsenide
He mea semiconductor koʻikoʻi nā wafers Gallium arsenide (GaAs), a ʻo ko lākou nui he mea koʻikoʻi i ke kaʻina hana hoʻomākaukau.
I kēia manawa, hana ʻia nā wafers GaAs i nā nui o 2 ʻīniha, 3 ʻīniha, 4 ʻīniha, 6 ʻīniha, 8 ʻīniha, a me 12 ʻīniha. Ma waena o kēia mau mea, ʻo nā wafers 6-ʻīniha kekahi o nā kikoʻī i hoʻohana nui ʻia.
ʻO ke anawaena kiʻekiʻe loa o nā kristal hoʻokahi i ulu ʻia e ke ʻano Horizontal Bridgman (HB) he 3 ʻīniha maʻamau, ʻoiai ʻo ke ʻano Liquid-Encapsulated Czochralski (LEC) hiki ke hana i nā kristal hoʻokahi a hiki i 12 ʻīniha ke anawaena. Eia nō naʻe, koi ka ulu ʻana o LEC i nā kumukūʻai lako kiʻekiʻe a loaʻa nā kristal me ka like ʻole a me ka nui o ka dislocation. Hiki i nā ʻano Vertical Gradient Freeze (VGF) a me Vertical Bridgman (VB) ke hana i nā kristal hoʻokahi a hiki i 8 ʻīniha ke anawaena, me ke ʻano like a me ka haʻahaʻa o ka dislocation.
ʻO ka ʻenehana hana no nā wafers GaAs semi-insulating 4-'īniha a me 6-'īniha i hoʻomalu nui ʻia e ʻekolu mau ʻoihana: ʻo Sumitomo Electric Industries o Iapana, ʻo Freiberger Compound Materials o Kelemania, a me AXT o ʻAmelika Hui Pū ʻIa. I ka makahiki 2015, ua helu mua nā substrates 6-'īniha ma mua o 90% o ka māhele mākeke.
I ka makahiki 2019, ua noho aliʻi ʻia ka mākeke substrate GaAs honua e Freiberger, Sumitomo, a me Beijing Tongmei, me nā ʻāpana mākeke o 28%, 21%, a me 13%. Wahi a nā kuhi a ka hui kūkākūkā ʻo Yole, ua hōʻea ke kūʻai aku honua o nā substrates GaAs (i hoʻololi ʻia i nā mea like 2-ʻīniha) ma kahi o 20 miliona mau ʻāpana i ka makahiki 2019 a ua manaʻo ʻia e ʻoi aku ma mua o 35 miliona mau ʻāpana i ka makahiki 2025. Ua waiwai ʻia ka mākeke substrate GaAs honua ma kahi o $200 miliona i ka makahiki 2019 a ua manaʻo ʻia e hōʻea i $348 miliona i ka makahiki 2025, me ka nui o ka ulu makahiki (CAGR) o 9.67% mai 2019 a i 2025.
4. Silicon Carbide Crystal Hoʻokahi
I kēia manawa, hiki i ka mākeke ke kākoʻo piha i ka ulu ʻana o nā kristal silicon carbide (SiC) hoʻokahi 2-'īniha a me 3-'īniha ke anawaena. Ua hōʻike nā ʻoihana he nui i ka ulu holomua ʻana o nā kristal hoʻokahi SiC ʻano 4H 4-'īniha, e hōʻailona ana i ka hoʻokō ʻana o Kina i nā pae honua ma ka ʻenehana ulu kristal SiC. Eia nō naʻe, aia nō kahi hakahaka koʻikoʻi ma mua o ke kālepa ʻana.
Ma keʻano laulā, ʻo nā ʻoaka SiC i ulu ʻia e nā ʻano wai-pae he liʻiliʻi iki, me ka mānoanoa ma ka pae kenimika. ʻO kēia kekahi kumu no ke kumukūʻai kiʻekiʻe o nā wafers SiC.
He loea ʻo XKH i ka R&D a me ka hana maʻamau o nā mea semiconductor koʻikoʻi, me ka sapphire, silicon carbide (SiC), nā wafers silicon, a me nā keramika, e uhi ana i ke kaulahao waiwai piha mai ka ulu ʻana o ke kristal a hiki i ka mīkini kikoʻī. Me ka hoʻohana ʻana i nā hiki ʻoihana i hoʻohui ʻia, hāʻawi mākou i nā wafers sapphire hana kiʻekiʻe, nā substrates silicon carbide, a me nā wafers silicon maʻemaʻe loa, i kākoʻo ʻia e nā hoʻonā i hana kūikawā ʻia e like me ka ʻoki maʻamau, ka uhi ʻana i ka ʻili, a me ka hana geometry paʻakikī e hoʻokō i nā koi kaiapuni koʻikoʻi i nā ʻōnaehana laser, ka hana semiconductor, a me nā noi ikehu hou.
Ke pili nei i nā kūlana maikaʻi, hōʻike kā mākou huahana i ka pololei o ka pae micron, ka paʻa wela >1500°C, a me ke kūpaʻa ʻoi aku ka maikaʻi o ka corrosion, e hōʻoiaʻiʻo ana i ka hilinaʻi i nā kūlana hana ʻino. Eia kekahi, hoʻolako mākou i nā substrates quartz, nā mea metala/ʻaʻole metala, a me nā ʻāpana semiconductor-grade ʻē aʻe, e hiki ai ke hoʻololi maʻalahi mai ka prototyping a i ka hana nui no nā mea kūʻai aku ma nā ʻoihana like ʻole.
Ka manawa hoʻouna: ʻAukake-29-2025