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ʻO ka wafer 12-'īniha 4H-SiC no nā aniani AR

ʻO ka wafer 12-'īniha 4H-SiC no nā aniani AR Kiʻi i hōʻike ʻia
  • ʻO ka wafer 12-'īniha 4H-SiC no nā aniani AR
  • ʻO ka wafer 12-'īniha 4H-SiC no nā aniani AR
  • ʻO ka wafer 12-'īniha 4H-SiC no nā aniani AR
  • ʻO ka wafer 12-'īniha 4H-SiC no nā aniani AR
  • ʻO ka wafer 12-'īniha 4H-SiC no nā aniani AR

Wehewehe Pōkole:

ʻO kaʻO ka substrate conductive 4H-SiC (silicon carbide) 12-'īnihahe wafer semiconductor wide-bandgap diameter nui loa i hoʻomohala ʻia no ka hanauna e hiki mai anauila kiʻekiʻe, mana kiʻekiʻe, alapine kiʻekiʻe, a me ka mahana kiʻekiʻehana ʻana i nā mea uila mana. Ke hoʻohana nei i nā pono kūloko o SiC—e like mekahua uila koʻikoʻi kiʻekiʻe, ka wikiwiki o ka holo ʻana o ka electron saturated kiʻekiʻe, conductivity wela kiʻekiʻe, a mekūpaʻa kemika maikaʻi loa—ua hoʻonoho ʻia kēia substrate ma ke ʻano he mea kumu no nā kahua mana holomua a me nā noi wafer wahi nui e kū mai ana.


Nā hiʻohiʻona

Kiʻikuhi kikoʻī

Wafer 12-'īniha 4H-SiC
Wafer 12-'īniha 4H-SiC

ʻIke laulā

ʻO kaʻO ka substrate conductive 4H-SiC (silicon carbide) 12-'īnihahe wafer semiconductor wide-bandgap diameter nui loa i hoʻomohala ʻia no ka hanauna e hiki mai anauila kiʻekiʻe, mana kiʻekiʻe, alapine kiʻekiʻe, a me ka mahana kiʻekiʻehana ʻana i nā mea uila mana. Ke hoʻohana nei i nā pono kūloko o SiC—e like mekahua uila koʻikoʻi kiʻekiʻe, ka wikiwiki o ka holo ʻana o ka electron saturated kiʻekiʻe, conductivity wela kiʻekiʻe, a mekūpaʻa kemika maikaʻi loa—ua hoʻonoho ʻia kēia substrate ma ke ʻano he mea kumu no nā kahua mana holomua a me nā noi wafer wahi nui e kū mai ana.

No ka hoʻoponopono ʻana i nā koi o ka ʻoihana holoʻokoʻa noka hoʻemi ʻana i ke kumukūʻai a me ka hoʻomaikaʻi ʻana i ka huahana, ka hoʻololi ʻana mai ke ʻano nui6–8 ʻīniha SiC to SiC 12-'īnihaUa ʻike nui ʻia nā substrates ma ke ʻano he ala nui. Hāʻawi kahi wafer 12-'īniha i kahi wahi hiki ke hoʻohana ʻia ma mua o nā ʻano liʻiliʻi, e hiki ai ke hoʻopuka make kiʻekiʻe aʻe no kēlā me kēia wafer, hoʻomaikaʻi i ka hoʻohana ʻana i ka wafer, a me ka hoʻemi ʻana i ka hapa o ka pohō lihi—no laila e kākoʻo ana i ka hoʻonui ʻana i ke kumukūʻai hana holoʻokoʻa ma ke kaulahao lako.

Alanui Hoʻoulu Crystal a me ka Hana ʻana i ka Wafer

 

Hoʻopuka ʻia kēia substrate conductive 4H-SiC 12-'īniha ma o kahi uhi kaulahao hana pihaka hoʻonui ʻana o ka hua, ka ulu ʻana o ke aniani hoʻokahi, ka wafering, ka lahilahi ʻana, a me ka polishing, e hahai ana i nā hana hana semiconductor maʻamau:

 

  • Hoʻonui ʻia nā hua e ka Physical Vapor Transport (PVT):
    He 12-'īniha4H-SiC hua anianiloaʻa ʻia ma o ka hoʻonui ʻana o ke anawaena me ka hoʻohana ʻana i ke ʻano PVT, e hiki ai ke ulu hou aʻe o nā boules conductive 4H-SiC 12-'īniha.

  • Ka ulu ʻana o ke kristal hoʻokahi conductive 4H-SiC:
    Alakaʻin⁺ 4H-SiCHoʻokō ʻia ka ulu ʻana o ke aniani hoʻokahi ma ka hoʻokomo ʻana i ka naikokene i loko o ke ambient ulu e hāʻawi i ka doping donor i kāohi ʻia.

  • Hana ʻana i ka wafer (hana semiconductor maʻamau):
    Ma hope o ke ʻano boule, hana ʻia nā wafers ma oʻokiʻoki laser, ukali ʻia eka lahilahi ʻana, ka poli ʻana (me ka hoʻopau ʻana i ka pae CMP), a me ka hoʻomaʻemaʻe ʻana.
    ʻO ka mānoanoa o ka substrate hopena560 μm.

 

Ua hoʻolālā ʻia kēia ala hoʻohui e kākoʻo i ka ulu paʻa ma ke anawaena nui loa me ka mālama ʻana i ka pono crystallographic a me nā waiwai uila kūlike.

 

sic wafer 9

 

No ka hōʻoia ʻana i ka loiloi piha o ka maikaʻi, ua wehewehe ʻia ke ʻano o ka substrate me ka hoʻohana ʻana i ka hui pū ʻana o nā mea hana hoʻonohonoho, optical, uila, a me nā mea hana nānā kīnā:

 

  • ʻIkepili Raman (palapala ʻāina):ka hōʻoia ʻana o ka like ʻana o ka polytype ma waena o ka wafer

  • ʻO ka microscopy optical piha piha (palapala wafer):ka ʻike ʻana a me ka loiloi helu o nā micropipes

  • ʻO ke ana ʻana i ke kū'ē ʻana o ka pilina ʻole (palapala wafer):ka hoʻolaha resistivity ma luna o nā wahi ana he nui

  • ʻO ka diffraction X-ray hoʻonā kiʻekiʻe (HRXRD):ka loiloi ʻana o ka maikaʻi o ka crystalline ma o nā ana ʻana o ke piʻo rocking

  • Nānā ʻana i ka dislocation (ma hope o ke kahakaha koho ʻana):loiloi o ka nui o ka dislocation a me ke ʻano (me ka hoʻoikaika ʻana i nā dislocations wili)

 

sic wafer 10

Nā Hualoaʻa Hana Koʻikoʻi (Lunamakaʻāinana)

Hōʻike nā hopena hōʻikeʻike e hōʻike ana ka substrate conductive 4H-SiC 12-'īniha i ka maikaʻi o ka mea ma nā palena koʻikoʻi:

(1) Ka maʻemaʻe a me ke kūlike o ka polytype

  • Hōʻike ka palapala ʻāina ʻāina ʻo RamanUhi polytype 100% 4H-SiCma waena o ka substrate.

  • ʻAʻole ʻike ʻia kahi hoʻokomo ʻana o nā polytypes ʻē aʻe (e laʻa, 6H a i ʻole 15R), e hōʻike ana i ka mana polytype maikaʻi loa ma ka unahi 12-'īniha.

(2) Ka nui o ka micropipe (MPD)

  • Hōʻike ka palapala ʻāina microscopy Wafer-scale i kahika nui o ka micropipe < 0.01 cm⁻², e hōʻike ana i ka hoʻopau pono ʻana i kēia māhele hemahema e kaupalena ana i ka hāmeʻa.

(3) Ke kū'ē uila a me ke kūlike

  • Hōʻike ka palapala ʻāina resistivity non-contact (361-point ana):

    • Pae kū'ē:20.5–23.6 mΩ·cm

    • ʻO ke kū'ē ʻana maʻamau:22.8 mΩ·cm

    • ʻAʻole like:< 2%
      Hōʻike kēia mau hopena i ke kūlike maikaʻi o ka hoʻokomo ʻana o ka dopant a me ka like ʻana o ka uila wafer-scale maikaʻi.

(4) ʻAno kristal (HRXRD)

  • Nā ana piʻo lūlū HRXRD ma ka(004) noʻonoʻo, lawe ʻia maʻelima mau heluma ke kuhikuhi o ke anawaena wafer, e hōʻike:

    • ʻO nā piko hoʻokahi, kokoke i like me ka ʻole o ke ʻano o ka nui o nā piko, e hōʻike ana i ka loaʻa ʻole o nā hiʻohiʻona palena palaoa kihi haʻahaʻa.

    • ʻAwelike FWHM:20.8 ʻākuhi (″), e hōʻike ana i ke ʻano kiʻekiʻe o ke aniani.

(5) Ka nui o ka hoʻoneʻe ʻana o ka wili (TSD)

  • Ma hope o ke kālai ʻana koho a me ka nānā ʻakomi ʻana,ka nui o ka hoʻoneʻe ʻana o ka wiliua ana ʻia ma2 kenimika⁻², e hōʻike ana i ka TSD haʻahaʻa ma ka unahi 12-'īniha.

Hopena mai nā hopena i luna:
Hōʻike ka substratemaikaʻi loa ka maʻemaʻe polytype 4H, ka nui o ka micropipe haʻahaʻa loa, ka resistivity haʻahaʻa paʻa a like, ka maikaʻi crystalline ikaika, a me ka nui o ka dislocation screw haʻahaʻa., e kākoʻo ana i kona kūpono no ka hana ʻana i nā hāmeʻa holomua.

Ka Waiwai Huahana a me nā Pōmaikaʻi

  • Hoʻāla i ka neʻe ʻana o ka hana ʻana o 12-'īniha SiC
    Hāʻawi i kahi kahua substrate kiʻekiʻe e kūlike ana me ke alanui ʻoihana i ka hana ʻana i ka wafer SiC 12-'īniha.

  • ʻO ka nui o nā hemahema haʻahaʻa no ka hoʻomaikaʻi ʻana i ka huahana a me ka hilinaʻi o ka hāmeʻa
    ʻO ka nui o ka micropipe haʻahaʻa loa a me ka nui o ka dislocation screw haʻahaʻa e kōkua i ka hōʻemi ʻana i nā ʻano hana pohō hua catastrophic a me parametric.

  • ʻO ke kūlike uila maikaʻi loa no ke kūpaʻa o ke kaʻina hana
    Kākoʻo ka hoʻolaha ʻana o ke kū'ē paʻa i ka hoʻomaikaʻi ʻana i ka wafer-to-wafer a me ke kūlike i loko o ka hāmeʻa wafer.

  • ʻO ke kūlana crystalline kiʻekiʻe e kākoʻo ana i ka epitaxy a me ka hana ʻana o nā hāmeʻa
    ʻO nā hopena HRXRD a me ka loaʻa ʻole o nā pūlima palena palaoa haʻahaʻa e hōʻike ana i ka maikaʻi o ka mea no ka ulu ʻana o ka epitaxial a me ka hana ʻana o nā hāmeʻa.

 

Nā Polokalamu Pahuhopu

Hoʻohana ʻia ka substrate conductive 4H-SiC 12-'īniha i:

  • Nā mea hana mana SiC:Nā MOSFET, nā diode pale Schottky (SBD), a me nā ʻano hana pili

  • Nā kaʻa uila:nā mea hoʻohuli traction nui, nā mea hoʻoili onboard (OBC), a me nā mea hoʻololi DC-DC

  • Ikehu hou a me ka pūnaewele:nā inverters photovoltaic, nā ʻōnaehana mālama ikehu, a me nā modula grid akamai

  • Nā mea uila mana ʻoihana:nā lako mana kiʻekiʻe, nā hoʻokele motika, a me nā mea hoʻololi voltage kiʻekiʻe

  • Nā koi o ka wafer wahi nui e kū mai ana:ka hoʻopili holomua a me nā hiʻohiʻona hana semiconductor ʻē aʻe e kūlike me 12-ʻīniha

 

Nā nīnau i nīnau pinepine ʻia - 12-'īniha Conductive 4H-SiC Substrate

Q1. He aha ke ʻano o ka substrate SiC o kēia huahana?

A:
He huahana kēiaʻO ka substrate conductive 12-'īniha (ʻano n⁺) 4H-SiC kristal hoʻokahi, i ulu ʻia e ke ʻano Physical Vapor Transport (PVT) a hana ʻia me ka hoʻohana ʻana i nā ʻano hana wafering semiconductor maʻamau.

Q2. No ke aha i koho ʻia ai ʻo 4H-SiC ma ke ʻano he polytype?

A:
Hāʻawi ʻo 4H-SiC i ka hui maikaʻi loa oka neʻe ʻana o ka electron kiʻekiʻe, ka bandgap ākea, ke kahua haki kiʻekiʻe, a me ka conductivity thermalma waena o nā polytypes SiC pili i ke kālepa. ʻO ia ka polytype nui i hoʻohana ʻia nonā mea hana SiC kiʻekiʻe-voltage a me ka mana kiʻekiʻe, e like me MOSFET a me Schottky diodes.

Q3. He aha nā pono o ka neʻe ʻana mai nā substrates SiC 8-'īniha a i 12-'īniha?

A:
Hāʻawi kahi wafer SiC 12-'īniha i kēia mau mea:

  • ʻIke nui ʻiaʻilikai nui aʻe e hiki ke hoʻohana ʻia

  • ʻOi aku ka nui o ka make make no kēlā me kēia wafer

  • Ka lakio lihi-pohō haʻahaʻa

  • Hoʻomaikaʻi ʻia ka launa pū ʻana menā laina hana semiconductor 12-'īniha holomua

Hāʻawi pololei kēia mau mea i kakumukūʻai haʻahaʻa no kēlā me kēia hāmeʻaa me ka ʻoi aku ka maikaʻi o ka hana ʻana.

E pili ana iā mākou

He loea ʻo XKH i ka hoʻomohala ʻenehana kiʻekiʻe, ka hana ʻana, a me ke kūʻai aku ʻana i ke aniani optical kūikawā a me nā mea kristal hou. Lawelawe kā mākou huahana i nā mea uila optical, nā mea uila mea kūʻai aku, a me ka pūʻali koa. Hāʻawi mākou i nā ʻāpana optical Sapphire, nā uhi lens kelepona paʻalima, Ceramics, LT, Silicon Carbide SIC, Quartz, a me nā wafers kristal semiconductor. Me ka ʻike loea a me nā lako hana kiʻekiʻe, ʻoi aku mākou i ka hana ʻana i nā huahana maʻamau ʻole, me ka manaʻo e lilo i alakaʻi i nā mea optoelectronic ʻoihana ʻenehana kiʻekiʻe.

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