12 ʻīniha SIC substrate silicon carbide prime grade diameter 300mm nui ka nui 4H-N Kūpono no ka hoʻopuehu wela o ka mea mana kiʻekiʻe

Wehewehe Pōkole:

ʻO kahi substrate silicon carbide 12-'īniha (SiC substrate) he substrate mea semiconductor nui a hana kiʻekiʻe i hana ʻia mai kahi kristal hoʻokahi o ka silicon carbide. ʻO Silicon carbide (SiC) kahi mea semiconductor band gap ākea me nā waiwai uila, thermal a me mechanical maikaʻi loa, i hoʻohana nui ʻia i ka hana ʻana i nā mea uila ma nā wahi mana kiʻekiʻe, alapine kiʻekiʻe a me nā mahana kiʻekiʻe. ʻO ka substrate 12-'īniha (300mm) ka kikoʻī holomua o kēia manawa o ka ʻenehana silicon carbide, hiki ke hoʻomaikaʻi nui i ka pono hana a hōʻemi i nā kumukūʻai.

E leka uila mai iā mākou

Nā hiʻohiʻona

Nā ʻano huahana

1. Ke alakaʻi wela kiʻekiʻe: ʻoi aku ka nui o ke alakaʻi wela o ka silicon carbide ma mua o 3 mau manawa o ka silicon, kahi kūpono no ka hoʻopuehu wela o ka mea mana kiʻekiʻe.

2. Ka ikaika o ke kahua haki kiʻekiʻe: ʻO ka ikaika o ke kahua haki he 10 mau manawa o ka silicon, kūpono no nā noi kaomi kiʻekiʻe.

3. Ka laulā ākea: ʻO ka laulā ākea he 3.26eV (4H-SiC), kūpono no nā noi wela kiʻekiʻe a me ke alapine kiʻekiʻe.

4. Paʻakikī kiʻekiʻe: ʻO ka paʻakikī Mohs he 9.2, ʻo ka lua wale nō i ka daimana, kūpaʻa maikaʻi loa i ka ʻaʻahu a me ka ikaika mechanical.

5. Paʻa kemika: kūpaʻa ikaika i ka pala, hana paʻa i ke kiʻekiʻe o ka mahana a me ke kaiapuni ʻino.

6. Nui ka nui: 12 ʻīniha (300mm) substrate, hoʻomaikaʻi i ka pono hana, hoʻemi i ke kumukūʻai o ka ʻāpana.

7.Haʻahaʻa ka nui o ke kīnā: ʻenehana ulu kristal hoʻokahi kiʻekiʻe e hōʻoia i ka haʻahaʻa o ka nui o ke kīnā a me ke kūlike kiʻekiʻe.

ʻO ke kuhikuhi noi nui o ka huahana

1. Nā mea uila mana:

Mosfets: Hoʻohana ʻia i nā kaʻa uila, nā hoʻokele motika ʻoihana a me nā mea hoʻololi mana.

ʻO nā diode: e like me nā diode Schottky (SBD), i hoʻohana ʻia no ka hoʻoponopono pono ʻana a me ka hoʻololi ʻana i nā lako mana.

2. Nā mea hana Rf:

Hoʻonui mana Rf: hoʻohana ʻia ma nā kikowaena kamaʻilio 5G a me nā kamaʻilio ukali.

Nā mea hana microwave: Kūpono no nā ʻōnaehana kamaʻilio radar a me nā ʻōnaehana kamaʻilio uea ʻole.

3. Nā kaʻa ikehu hou:

Nā ʻōnaehana hoʻokele uila: nā mea hoʻokele motika a me nā inverters no nā kaʻa uila.

Puʻu hoʻoili: Modula mana no nā lako hoʻoili wikiwiki.

4. Nā noi ʻoihana:

Inverter uila kiʻekiʻe: no ka mana o ka motika ʻoihana a me ka hoʻokele ikehu.

Pūnaewele akamai: No nā mea hoʻololi uila hoʻoili HVDC a me nā mea hoʻololi uila mana.

5. Lewa:

Nā mea uila wela kiʻekiʻe: kūpono no nā wahi wela kiʻekiʻe o nā lako aerospace.

6. Kahua noiʻi:

Noiʻi semiconductor bandgap ākea: no ka hoʻomohala ʻana i nā mea a me nā hāmeʻa semiconductor hou.

ʻO ka substrate silicon carbide 12-'īniha he ʻano substrate mea semiconductor hana kiʻekiʻe me nā waiwai maikaʻi loa e like me ke conductivity thermal kiʻekiʻe, ka ikaika kahua breakdown kiʻekiʻe a me ka band gap ākea. Hoʻohana nui ʻia ia i nā mea uila mana, nā mea alapine lekiō, nā kaʻa ikehu hou, ka mana ʻoihana a me ka aerospace, a he mea nui ia e hoʻolaha i ka hoʻomohala ʻana o ka hanauna hou o nā mea uila kūpono a me ka mana kiʻekiʻe.

ʻOiai ʻoi aku ka liʻiliʻi o nā noi pololei o nā substrates silicon carbide i nā mea uila mea kūʻai aku e like me nā aniani AR, hiki i ko lākou hiki ke hoʻokele mana pono a me nā mea uila miniaturized ke kākoʻo i nā hopena lako mana māmā a kiʻekiʻe no nā polokalamu AR/VR e hiki mai ana. I kēia manawa, ʻo ka hoʻomohala nui ʻana o ka substrate silicon carbide e kau nui ʻia ana ma nā kahua ʻoihana e like me nā kaʻa ikehu hou, nā ʻōnaehana kamaʻilio a me ka automation ʻoihana, a paipai i ka ʻoihana semiconductor e hoʻomohala i kahi ala ʻoi aku ka maikaʻi a me ka hilinaʻi.

Ua kūpaʻa ʻo XKH i ka hāʻawi ʻana i nā substrates 12 "SIC kiʻekiʻe me ke kākoʻo loea piha a me nā lawelawe, me:

1. Hana ʻana i hoʻopilikino ʻia: Wahi a ka mea kūʻai aku e pono ai e hāʻawi i nā resistivity like ʻole, ke kuhikuhi kristal a me ka substrate mālama ʻili.

2. Hoʻonui i ke kaʻina hana: Hāʻawi i nā mea kūʻai aku me ke kākoʻo loea o ka ulu ʻana o ka epitaxial, ka hana ʻana i nā hāmeʻa a me nā kaʻina hana ʻē aʻe e hoʻomaikaʻi i ka hana huahana.

3. Hoʻāʻo a me ka hōʻoia: E hāʻawi i ka ʻike kīnā koʻikoʻi a me ka hōʻoia maikaʻi e hōʻoia i ka hoʻokō ʻana o ka substrate i nā kūlana ʻoihana.

4.R&D laulima: E hoʻomohala pū i nā mea hana silicon carbide hou me nā mea kūʻai aku e hoʻolaha i ka hana hou ʻenehana.

Palapala ʻikepili

1 2 ʻīniha Silicon Carbide (SiC) Substrate Specification
Papa		Hana ʻana o ZeroMPD Papa (Papa Z)	Hana Maʻamau Papa (Papa P)		Papa Dummy (Papa D)
Anawaena		3 0 0 mm~305mm
Mānoanoa	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Hoʻonohonoho Wafer		ʻO ke axis ma waho: 4.0° i ka ʻaoʻao <1120 >±0.5° no 4H-N, Ma ke axis: <0001>±0.5° no 4H-SI
Ka nui o ka micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ke kū'ē ʻana	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Kūlana Pālahalaha Mua		{10-10} ±5.0°
Ka Lōʻihi Palahalaha Mua	4H-N	ʻAʻohe
	4H-SI	ʻOki
Hoʻokaʻawale ʻana i ka lihi		3 mm
LTV/TTV/Kakaka/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
ʻOʻoleʻa		Polani Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe Nā Hoʻokomo Kalapona ʻIke Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe		ʻAʻohe ʻĀpana hōʻuluʻulu ≤0.05% ʻAʻohe ʻĀpana hōʻuluʻulu ≤0.05% ʻAʻohe			Ka lōʻihi hui ≤ 20 mm, ka lōʻihi hoʻokahi ≤2 mm ʻĀpana hōʻuluʻulu ≤0.1% ʻĀpana hōʻuluʻulu ≤3% ʻĀpana hōʻuluʻulu ≤3% Ka lōʻihi huina ≤1 × ke anawaena wafer
Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe		ʻAʻohe mea i ʻae ʻia ≥0.2mm ka laulā a me ka hohonu			7 i ʻae ʻia, ≤1 mm kēlā me kēia
(TSD) Hoʻoneʻe ʻana i ka wili wili		≤500 kenimika-2		ʻAʻohe
(BPD) Ka neʻe ʻana o ka mokulele kumu		≤1000 kenimika-2		ʻAʻohe
Ka haumia ʻana o ka ʻili Silicon e ka mālamalama ikaika kiʻekiʻe		ʻAʻohe
Ka hoʻopili ʻana		Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi
Nā memo:
1 Pili nā palena kīnā i ka ʻili wafer holoʻokoʻa koe wale nō ka ʻāpana hoʻokoe lihi. Pono e nānā ʻia nā ʻōpala ma ka maka Si wale nō. 3 Mai nā wafers i kālai ʻia ʻo KOH wale nō ka ʻikepili dislocation.

E hoʻomau ʻo XKH i ka hoʻopukapuka kālā ʻana i ka noiʻi a me ka hoʻomohala ʻana e hoʻolaha i ka holomua o nā substrates silicon carbide 12-'īniha i ka nui nui, nā hemahema haʻahaʻa a me ke kūlike kiʻekiʻe, ʻoiai ʻo XKH e ʻimi nei i kāna mau noi ma nā wahi e kū mai ana e like me nā mea uila mea kūʻai aku (e like me nā modula mana no nā mea AR/VR) a me ka helu quantum. Ma ka hōʻemi ʻana i nā kumukūʻai a me ka hoʻonui ʻana i ka mana, e lawe mai ʻo XKH i ka pōmaikaʻi i ka ʻoihana semiconductor.