2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade

Wehewehe Pōkole:

ʻO ka substrate kristal hoʻokahi 6H n-type Silicon Carbide (SiC) kahi mea semiconductor koʻikoʻi i hoʻohana nui ʻia i nā noi uila mana kiʻekiʻe, alapine kiʻekiʻe, a me nā mahana kiʻekiʻe. Kaulana no kona ʻano kristal hexagonal, hāʻawi ʻo 6H-N SiC i kahi bandgap ākea a me ka conductivity thermal kiʻekiʻe, e kūpono ana no nā wahi koi.
ʻO ke kahua uila haki kiʻekiʻe o kēia mea a me ka neʻe ʻana o ka electron e hiki ai ke hoʻomohala i nā mea uila mana kūpono, e like me MOSFET a me IGBT, hiki ke hana ma nā voltages a me nā mahana kiʻekiʻe ma mua o nā mea i hana ʻia mai ka silicon kuʻuna. ʻO kona conductivity thermal maikaʻi loa e hōʻoia i ka hoʻokuʻu wela maikaʻi, koʻikoʻi no ka mālama ʻana i ka hana a me ka hilinaʻi i nā noi mana kiʻekiʻe.
I nā noi radiofrequency (RF), kākoʻo nā waiwai o 6H-N SiC i ka hoʻokumu ʻana o nā mea hana i hiki ke hana ma nā alapine kiʻekiʻe me ka hoʻomaikaʻi ʻana i ka pono. ʻO kona kūpaʻa kemika a me ke kūʻē ʻana i ka radiation e kūpono ai no ka hoʻohana ʻana i nā wahi ʻino, me nā ʻāpana aerospace a me ka pale kaua.
Eia kekahi, he mea koʻikoʻi nā substrates 6H-N SiC i nā mea optoelectronic, e like me nā photodetectors ultraviolet, kahi e ʻae ai ko lākou bandgap ākea no ka ʻike ʻana i ke kukui UV maikaʻi. ʻO ka hui pū ʻana o kēia mau waiwai e hoʻolilo iā 6H n-type SiC i mea versatile a pono ʻole i ka hoʻolaha ʻana i nā ʻenehana uila a me nā optoelectronic hou.

E leka uila mai iā mākou

Nā hiʻohiʻona

Eia nā ʻano o ka wafer silicon carbide:

· Inoa Huahana: SiC Substrate
· ʻAno Hexagonal: Nā waiwai uila kūikawā.
· Ka Neʻe ʻana o nā Uila Kiʻekiʻe: ~600 cm²/V·s.
· Paʻa Kemika: Kūpaʻa i ka pala.
· Ke Kū'ē i ka Pāhawewe: Kūpono no nā wahi ʻino.
· Haʻahaʻa ka nui o ka mea lawe kūloko: Kūpono i nā mahana kiʻekiʻe.
· Paʻa: Nā waiwai mechanical ikaika.
· Hiki ke Optoelectronic: ʻIke pono i ka mālamalama UV.

He nui nā noi o ka wafer carbide Silicon

Nā noi wafer SiC:
Hoʻohana ʻia nā substrates SiC (Silicon Carbide) i nā noi hana kiʻekiʻe like ʻole ma muli o ko lākou mau waiwai kūikawā e like me ke alakaʻi wela kiʻekiʻe, ka ikaika kahua uila kiʻekiʻe, a me ka bandgap ākea. Eia kekahi mau noi:

1. Nā Uila Mana:
·Nā MOSFET uila kiʻekiʻe
·Nā IGBT (Insulated Gate Bipolar Transistors)
·Nā diode Schottky
·Nā mea hoʻololi mana

2. Nā Mea Hana Alapine Kiʻekiʻe:
·Nā mea hoʻonui RF (Radio Frequency)
·Nā transistors microwave
·Nā mea hana nalu milimita

3. Nā Uila Mahana Kiʻekiʻe:
· Nā mea ʻike a me nā kaapuni no nā wahi ʻino
· Nā mea uila mokulele
·Nā mea uila kaʻa (e laʻa, nā ʻāpana hoʻomalu mīkini)

4.Optoelectronics:
·Nā mea ʻike kiʻi Ultraviolet (UV)
·Nā diode hoʻomālamalama (LED)
·Nā diode laser

5. Nā ʻōnaehana ikehu hou:
·Nā mea hoʻololi lā
·Nā mea hoʻololi turbine makani
· Nā mana o ke kaʻa uila

6. ʻOihana a me ka Pale Kaua:
·Nā ʻōnaehana radar
·Nā kamaʻilio ukali
· Nā mea hana reactor nukelea

Hoʻopilikino ʻana o ka wafer SiC

Hiki iā mākou ke hoʻopilikino i ka nui o ka substrate SiC e hoʻokō i kāu mau koi kikoʻī. Hāʻawi pū mākou i kahi wafer 4H-Semi HPSI SiC me ka nui o 10x10mm a i ʻole 5x5 mm.
Hoʻoholo ʻia ke kumukūʻai e ka hihia, a hiki ke hoʻopilikino ʻia nā kikoʻī o ka pūʻolo i kou makemake.
ʻO ka manawa hāʻawi i loko o 2-4 mau pule. ʻAe mākou i ka uku ma o T/T.
Loaʻa i kā mākou hale hana nā lako hana holomua a me ke kime loea, hiki ke hoʻopilikino i nā kikoʻī like ʻole, nā mānoanoa a me nā ʻano o ka wafer SiC e like me nā koi kikoʻī o nā mea kūʻai aku.