6 ʻīniha 4H SEMI ʻAno SiC composite substrate Mānoanoa 500μm TTV≤5μm MOS grade

Wehewehe Pōkole:

Me ka holomua wikiwiki o nā kamaʻilio 5G a me ka ʻenehana radar, ua lilo ka substrate composite SiC semi-insulating 6-'īniha i mea nui no ka hana ʻana i nā hāmeʻa alapine kiʻekiʻe. Ke hoʻohālikelike ʻia me nā substrates GaAs kuʻuna, mālama kēia substrate i ke kū'ē kiʻekiʻe (>10⁸ Ω·cm) ʻoiai e hoʻomaikaʻi ana i ka conductivity thermal ma mua o 5x, e hoʻoponopono pono ana i nā pilikia hoʻoheheʻe wela i nā hāmeʻa nalu millimeter. ʻO nā amplifiers mana i loko o nā hāmeʻa o kēlā me kēia lā e like me nā kelepona akamai 5G a me nā kikowaena kamaʻilio ukali ua kūkulu ʻia ma luna o kēia substrate. Ma ka hoʻohana ʻana i kā mākou ʻenehana "buffer layer doping compensation", ua hoʻemi mākou i ka nui o ka micropipe i lalo o 0.5/cm² a ua hoʻokō i ka pohō microwave haʻahaʻa loa o 0.05 dB/mm.

E leka uila mai iā mākou

Nā hiʻohiʻona

Nā palena loea

Nā Mea	Nā kikoʻī	Nā Mea	Nā kikoʻī
Anawaena	150±0.2 mm	ʻO ka ʻoʻoleʻa mua (Si-face)	Ra≤0.2 nm (5μm × 5μm)
Polytype	4H	ʻĀpana lihi, ʻōpala, māwae (nānā maka)	ʻAʻohe
Ke kū'ē ʻana	≥1E8 Ω·cm	TTV	≤5 μm
Mānoanoa o ka papa hoʻoili	≥0.4 μm	ʻŌwiliwili	≤35 μm
ʻAʻohe wahi (2mm>D>0.5mm)	≤5 kēlā me kēia Wafer	Mānoanoa	500±25 μm

Nā Hiʻohiʻona Koʻikoʻi

1. Hana Kūikawā Loa o ke Alapine Kiʻekiʻe
Hoʻohana ka substrate composite SiC semi-insulating 6-'īniha i kahi hoʻolālā papa dielectric graded, e hōʻoiaʻiʻo ana i ka loli mau dielectric o <2% ma ka Ka-band (26.5-40 GHz) a hoʻomaikaʻi i ke kūlike o ka pae ma 40%. 15% ka piʻi ʻana o ka pono a me 20% ka hoʻemi ʻana i ka hoʻohana ʻana i ka mana ma nā modula T/R me ka hoʻohana ʻana i kēia substrate.

2. Hoʻokele Wela Holomua
ʻO kahi ʻano hana hui "thermal bridge" kū hoʻokahi e hiki ai i ka conductivity thermal lateral o 400 W/m·K. Ma nā modula PA kahua kumu 28 GHz 5G, piʻi ka mahana o ka hui ʻana ma 28°C wale nō ma hope o 24 mau hola o ka hana mau—50°C haʻahaʻa ma mua o nā hoʻonā maʻamau.

3. Kūlana Wafer Kiʻekiʻe Loa
Ma o ke ʻano hana Physical Vapor Transport (PVT) i hoʻomaikaʻi ʻia, loaʻa iā mākou ka dislocation density <500/cm² a me ka Total Thickness Variation (TTV) <3 μm.
4. Ka Hana Hana ʻAna i ka Hana ʻAna
ʻO kā mākou hana annealing laser i hoʻomohala kūikawā ʻia no ka substrate composite SiC semi-insulating 6-'īniha e hōʻemi ana i ka nui o ke kūlana o ka ʻili ma ʻelua mau kauoha o ka nui ma mua o ka epitaxy.

Nā Noi Nui

1. Nā ʻĀpana Koʻikoʻi o ke Kahua Kumu 5G
I loko o nā ʻāpana antenna MIMO nui, loaʻa i nā hāmeʻa GaN HEMT ma nā substrates composite SiC semi-insulating 6-'īniha ka mana hoʻopuka 200W a me ka pono >65%. Ua hōʻike nā hoʻāʻo kahua ma 3.5 GHz i ka piʻi ʻana o 30% i ka radius uhi.

2. Nā ʻōnaehana kamaʻilio ukali
ʻO nā mea hoʻoili ukali Low-Earth orbit (LEO) e hoʻohana ana i kēia substrate e hōʻike ana i ka 8 dB EIRP kiʻekiʻe aʻe ma ka Q-band (40 GHz) ʻoiai e hoʻemi ana i ke kaumaha ma ka 40%. Ua hoʻohana nā kikowaena SpaceX Starlink iā ia no ka hana nui ʻana.

3. Nā ʻōnaehana radar koa
Hoʻokō nā modula T/R radar Phased-array ma kēia substrate i ka bandwidth 6-18 GHz a me ka helu walaʻau e like me 1.2 dB, e hoʻonui ana i ka laulā ʻike ʻana ma 50 km i nā ʻōnaehana radar ʻōlelo aʻo mua.

4. Radar Milimita-Nalu o ke kaʻa
Hoʻomaikaʻi nā ʻāpana radar kaʻa 79 GHz e hoʻohana ana i kēia substrate i ka hoʻonā angular i 0.5°, e hoʻokō ana i nā koi hoʻokele kūʻokoʻa L4.

Hāʻawi mākou i kahi hopena lawelawe maʻamau piha no nā substrates SiC semi-insulating 6-'īniha. Ma ke ʻano o ka hoʻopilikino ʻana i nā palena mea, kākoʻo mākou i ka hoʻoponopono pololei ʻana o ka resistivity i loko o ka pae o 10⁶-10¹⁰ Ω·cm. ʻOi aku hoʻi no nā noi koa, hiki iā mākou ke hāʻawi i kahi koho kū'ē kiʻekiʻe loa o >10⁹ Ω·cm. Hāʻawi ia i ʻekolu mau kikoʻī mānoanoa o 200μm, 350μm a me 500μm i ka manawa like, me ka hoʻomanawanui i kāohi pono ʻia i loko o ±10μm, e hoʻokō ana i nā koi like ʻole mai nā polokalamu alapine kiʻekiʻe a hiki i nā noi mana kiʻekiʻe.

Ma ke ʻano o nā kaʻina hana mālama ʻili, hāʻawi mākou i ʻelua mau hopena ʻoihana: Hiki i ka Chemical Mechanical Polishing (CMP) ke hoʻokō i ka palahalaha ʻili atomika me Ra<0.15nm, e hoʻokō ana i nā koi ulu epitaxial koi nui loa; ʻO ka ʻenehana mālama ʻili mākaukau epitaxial no nā koi hana wikiwiki hiki ke hāʻawi i nā ʻili ultra-smooth me Sq<0.3nm a me ka mānoanoa oxide koena <1nm, e hoʻomaʻalahi nui ana i ke kaʻina hana mua ma ka hopena o ka mea kūʻai aku.

Hāʻawi ʻo XKH i nā hoʻonā i hoʻopilikino piha ʻia no nā substrates composite SiC semi-insulating 6-'īniha

1. Hoʻopilikino ʻana i nā Palena Mea
Hāʻawi mākou i ka hoʻonohonoho resistivity pololei i loko o ka pae o 10⁶-10¹⁰ Ω·cm, me nā koho resistivity kiʻekiʻe loa >10⁹ Ω·cm i loaʻa no nā noi koa/aerospace.

2. Nā kikoʻī mānoanoa
ʻEkolu mau koho mānoanoa maʻamau:

· 200μm (i hoʻomaikaʻi ʻia no nā mea hana alapine kiʻekiʻe)

· 350μm (kikoʻī maʻamau)

· 500μm (i hoʻolālā ʻia no nā noi mana kiʻekiʻe)
· Mālama nā ʻano like ʻole i ka hoʻomanawanui mānoanoa paʻa o ±10μm.

3. Nā ʻenehana mālama ʻili

ʻO ka Polishing Mechanical Chemical (CMP): Hoʻokō i ka pālahalaha ʻili pae atomika me Ra<0.15nm, e hoʻokō ana i nā koi ulu epitaxial koʻikoʻi no nā RF a me nā mea mana.

4. Ka Hana ʻana i ka ʻIli Epi-Ready

· Hāʻawi i nā ʻili laumania loa me ka ʻoʻoleʻa Sq<0.3nm

· Hoʻomalu i ka mānoanoa o ka oxide maoli i <1nm

· Hoʻopau a hiki i 3 mau ʻanuʻu hana mua ma nā hale hana o nā mea kūʻai aku