ʻO ka HPSI SiCOI wafer 4 6'īniha Hydropholic Bonding

Kiʻi i hōʻike ʻia no ka HPSI SiCOI wafer 4 6 iniha Hydropholic Bonding

Wehewehe Pōkole:

Hoʻomohala ʻia nā wafers semi-insulating kiʻekiʻe-maʻemaʻe (HPSI) 4H-SiCOI me ka hoʻohana ʻana i nā ʻenehana hoʻopili a me ka lahilahi holomua. Hana ʻia nā wafers ma ka hoʻopili ʻana i nā substrates silicon carbide 4H HPSI ma luna o nā papa oxide thermal ma o ʻelua mau ʻano koʻikoʻi: ka hoʻopili hydrophilic (pololei) a me ka hoʻopili ʻana i ka ʻili. Hoʻolauna ka mea hope i kahi papa i hoʻololi ʻia waena (e like me ka silicon amorphous, alumini oxide, a i ʻole titanium oxide) e hoʻomaikaʻi i ka maikaʻi o ka hoʻopili a hōʻemi i nā pehu, kūpono loa no nā noi optical. Hoʻokō ʻia ka mana mānoanoa o ka papa silicon carbide ma o ka implantation-based SmartCut a i ʻole ka wili ʻana a me nā kaʻina hana polishing CMP. Hāʻawi ʻo SmartCut i ke ʻano like o ka mānoanoa kiʻekiʻe (50nm–900nm me ke ʻano like ±20nm) akā hiki ke hoʻoulu i ka pōʻino kristal liʻiliʻi ma muli o ka implantation ion, e hoʻopilikia ana i ka hana o ka hāmeʻa optical. Pale aku ka wili ʻana a me ka polishing CMP i ka pōʻino o nā mea a makemake ʻia no nā kiʻiʻoniʻoni mānoanoa (350nm–500µm) a me nā noi quantum a i ʻole PIC, ʻoiai me ka emi ʻana o ke ʻano like o ka mānoanoa (±100nm). Loaʻa i nā wafers maʻamau 6-'īniha kahi papa SiC 1µm ±0.1µm ma luna o kahi papa SiO2 3µm ma luna o nā substrates 675µm Si me ka laumania ʻili kūikawā (Rq < 0.2nm). Hoʻolako kēia mau wafers HPSI SiCOI i ka hana ʻana o MEMS, PIC, quantum, a me nā mea optical me ka maikaʻi o nā mea hana a me ka maʻalahi o ke kaʻina hana.

E leka uila mai iā mākou

Nā hiʻohiʻona

ʻIkepili o nā waiwai o ka SiCOI Wafer (Silicon Carbide-on-Insulator)

ʻO nā wafers SiCOI kahi substrate semiconductor hanauna hou e hoʻohui ana iā Silicon Carbide (SiC) me kahi papa insulating, pinepine ʻo SiO₂ a i ʻole sapphire, e hoʻomaikaʻi i ka hana ma nā electronics mana, RF, a me photonics. Aia ma lalo kahi ʻike kikoʻī o kā lākou mau waiwai i hoʻokaʻawale ʻia i nā ʻāpana koʻikoʻi:

Waiwai	Wehewehena
Hoʻohuihui Mea	ʻO ka papa Silicon Carbide (SiC) i hoʻopaʻa ʻia ma luna o kahi substrate insulating (ʻo SiO₂ a i ʻole sapphire)
ʻAno Crystal	ʻO 4H a i ʻole 6H polytypes o SiC maʻamau, i ʻike ʻia no ke ʻano kiʻekiʻe o ke aniani a me ke kūlike
Nā Waiwai Uila	Kahua uila haki kiʻekiʻe (~3 MV/cm), ka laulā ākea (~3.26 eV no 4H-SiC), ke au leaka haʻahaʻa
Ka Hoʻokele Wela	ʻO ke alakaʻi wela kiʻekiʻe (~300 W/m·K), e hiki ai ke hoʻokuʻu pono i ka wela
Papa Dielectric	Hāʻawi ka papa insulating (SiO₂ a i ʻole sapphire) i ka hoʻokaʻawale uila a hoʻemi i ka capacitance parasitic
Nā Waiwai Mekanika	Paʻakikī kiʻekiʻe (~9 Mohs unahi), ikaika mīkini maikaʻi loa, a me ke kūpaʻa wela
Hoʻopau ʻili	ʻOi aku ka laumania me ka haʻahaʻa o ka hemahema, kūpono no ka hana ʻana i nā hāmeʻa
Nā noi	Nā mea uila mana, nā mea MEMS, nā mea RF, nā mea ʻike e pono ai ke ahonui i ka mahana kiʻekiʻe a me ke voltage

Hōʻike nā wafers SiCOI (Silicon Carbide-on-Insulator) i kahi ʻano substrate semiconductor holomua, nona kahi papa lahilahi kiʻekiʻe o ka silicon carbide (SiC) i hoʻopaʻa ʻia ma luna o kahi papa insulating, ʻo ia hoʻi ka silicon dioxide (SiO₂) a i ʻole sapphire. ʻO Silicon carbide kahi semiconductor ākea-bandgap i ʻike ʻia no kona hiki ke kū i nā voltages kiʻekiʻe a me nā mahana kiʻekiʻe, me ka conductivity thermal maikaʻi loa a me ka paʻakikī mechanical kiʻekiʻe, e kūpono ana no nā noi uila mana kiʻekiʻe, alapine kiʻekiʻe, a me nā mahana kiʻekiʻe.

Hāʻawi ka papa insulating i loko o nā wafers SiCOI i ka hoʻokaʻawale uila maikaʻi, e hōʻemi nui ana i ka capacitance parasitic a me nā kahe leaka ma waena o nā hāmeʻa, a laila e hoʻonui ana i ka hana holoʻokoʻa a me ka hilinaʻi o ka hāmeʻa. Hoʻopili pololei ʻia ka ʻili wafer e hoʻokō i ka ultra-smoothness me nā hemahema liʻiliʻi, e hoʻokō ana i nā koi koʻikoʻi o ka hana ʻana o nā hāmeʻa micro- a me nano-scale.

ʻAʻole wale kēia ʻano mea e hoʻomaikaʻi i nā ʻano uila o nā mea SiC akā hoʻomaikaʻi nui hoʻi i ka hoʻokele wela a me ke kūpaʻa mechanical. ʻO ka hopena, hoʻohana nui ʻia nā wafers SiCOI i nā mea uila mana, nā ʻāpana alapine lekiō (RF), nā sensor ʻōnaehana microelectromechanical (MEMS), a me nā mea uila wela kiʻekiʻe. Ma keʻano holoʻokoʻa, hoʻohui nā wafers SiCOI i nā waiwai kino kūikawā o ka silicon carbide me nā pono hoʻokaʻawale uila o kahi papa insulator, e hāʻawi ana i kahi kahua kūpono no ka hanauna e hiki mai ana o nā mea semiconductor hana kiʻekiʻe.

Ka hoʻohana ʻana o ka wafer SiCOI

Nā Mea Hana Uila Mana

Nā kuapo uila kiʻekiʻe a me ka mana kiʻekiʻe, MOSFET, a me nā diode

E pōmaikaʻi mai ka bandgap ākea o SiC, ke kiʻekiʻe o ka breakdown voltage, a me ke kūpaʻa wela

Ua hoʻemi ʻia ka pohō mana a ua hoʻomaikaʻi ʻia ka pono ma nā ʻōnaehana hoʻololi mana

Nā ʻĀpana Alapine Lekiō (RF)

Nā transistors alapine kiʻekiʻe a me nā amplifiers

Hoʻonui ka capacitance parasitic haʻahaʻa ma muli o ka papa insulating i ka hana RF

Kūpono no nā ʻōnaehana kamaʻilio 5G a me nā ʻōnaehana radar

Nā ʻōnaehana Microelectromechanical (MEMS)

Nā mea ʻike a me nā actuators e hana ana i nā wahi ʻino

ʻO ka paʻa o ka mīkini a me ka inertness kemika e hoʻolōʻihi i ke ola o ka hāmeʻa

Hoʻokomo pū ʻia nā mea ʻike kaomi, nā accelerometers, a me nā gyroscopes

Nā Uila Wela Kiʻekiʻe

Nā mea uila no nā noi kaʻa, aerospace, a me nā ʻoihana

Hana pono i nā mahana kiʻekiʻe kahi e hāʻule ai ka silicon

Nā Mea Hana Photonic

Hoʻohui ʻia me nā ʻāpana optoelectronic ma nā substrates insulator

Hoʻāla i ka photonics ma ka chip me ka hoʻokele thermal i hoʻomaikaʻi ʻia

Nā nīnau a me nā pane a ka wafer SiCOI

Nīnau:He aha ka wafer SiCOI

A：ʻO ke ʻano o ka wafer SiCOI no ka wafer Silicon Carbide-on-Insulator. He ʻano substrate semiconductor ia kahi i hoʻopaʻa ʻia ai kahi papa lahilahi o ka silicon carbide (SiC) ma luna o kahi papa insulating, ʻo ia hoʻi ka silicon dioxide (SiO₂) a i ʻole kekahi manawa sapphire. Ua like kēia ʻano hana me nā wafers Silicon-on-Insulator (SOI) i ʻike nui ʻia akā hoʻohana iā SiC ma kahi o ka silicon.