ʻO ka Wafer Substrates ma ke ʻano he mau mea koʻikoʻi ma nā mea semiconductor
ʻO nā substrate Wafer nā mea lawe kino o nā mea semiconductor, a ʻo kā lākou waiwai waiwai e hoʻoholo pololei i ka hana o ka hāmeʻa, kumukūʻai, a me nā kahua noi. Aia ma lalo iho nā ʻano nui o ka wafer substrates me kā lākou mau pono a me nā hemahema:
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Māhele Makeke:ʻOi aku ma mua o 95% o ka mākeke semiconductor honua.
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Pono:
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Kumukuai haʻahaʻa:Nui nā mea maka (silicon dioxide), nā kaʻina hana oʻo, a me nā ʻoihana waiwai nui.
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Kūlike kaʻina hana kiʻekiʻe:He oʻo loa ka ʻenehana CMOS, e kākoʻo ana i nā node holomua (e laʻa, 3nm).
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ʻO ka maikaʻi kristal maikaʻi loa:Hiki ke hoʻoulu ʻia nā wafers nui-anawaena (ma kahi o 12-ʻīniha, 18-ʻīniha ma lalo o ka hoʻomohala ʻana) me ka haʻahaʻa haʻahaʻa.
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Nā waiwai mechanical paʻa:Maʻalahi e ʻoki, poli, a mālama.
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Nā hemahema:
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Awāwa haiki (1.12 eV):ʻO ka leakage kiʻekiʻe i nā mahana kiʻekiʻe, e kaupalena ana i ka pono o ka mana.
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ʻAʻohe hui pū:He haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa, kūpono ʻole no nā mea optoelectronic e like me nā LED a me nā lasers.
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ʻO ka neʻe ʻana o ka electron i kaupalena ʻia:Haʻahaʻa haʻahaʻa kiʻekiʻe-frequency hana hoʻohālikelike ʻia me nā semiconductors compound.

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Nā noi:Nā hāmeʻa RF kiʻekiʻe (5G/6G), nā mea optoelectronic (lasers, solar cell).
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Pono:
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ʻO ka neʻe ʻana o ka electron kiʻekiʻe (5–6x kēlā o ke silikoni):He kūpono no nā noi wikiwiki kiʻekiʻe e like me ke kamaʻilio hawewe millimeter.
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ʻAʻohe huikau pololei (1.42 eV):ʻO ka hoʻololi photoelectric kiʻekiʻe, ke kumu o nā laser infrared a me nā LED.
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ʻO ka wela kiʻekiʻe a me ka pale ʻana i ka radiation:He kūpono no ka aerospace a me ka ʻino.
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Nā hemahema:
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Ke kumu kūʻai kiʻekiʻe:Kakaʻikahi ka waiwai, ka ulu ʻana o ke aniani paʻakikī (hiki i ka hoʻokaʻawale ʻana), ka nui wafer palena ʻia (ka nui 6-ʻīniha).
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Mechanics palupalu:Kūleʻa i ka haʻihaʻi, ka hopena i ka haʻahaʻa o ka hana ʻana.
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ʻona:Pono ʻo Arsenic i ka mālama koʻikoʻi a me nā kaohi o ke kaiapuni.
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3. Kapili Silika (SiC)
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Nā noi:ʻO nā mea mana kiʻekiʻe a me nā mana kiʻekiʻe (EV inverters, charging stations), aerospace.
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Pono:
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ʻAha bandā ākea (3.26 eV):ʻO ka ikaika haʻihaʻi kiʻekiʻe (10x ka silicon), ka hoʻomanawanui kiʻekiʻe (ka mahana hana> 200 °C).
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ʻO ke kau wela wela kiʻekiʻe (≈3× silika):ʻOi aku ka maikaʻi o ka hoʻoheheʻe ʻana i ka wela, hiki ke ʻoi aku ka nui o ka mana o ka ʻōnaehana.
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poho hoololi haahaa:Hoʻomaikaʻi i ka pono hoʻololi mana.
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Nā hemahema:
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ʻO ka hoʻomākaukau ʻana i kahi substrate paʻakikī:ʻO ka ulu ʻana o ke aniani lohi (> 1 pule), paʻakikī ka hoʻokele defect (micropipes, dislocations), ke kumu kūʻai kiʻekiʻe loa (5-10x silicon).
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Nui wafer liʻiliʻi:ʻO ka nui 4-6 iniha; 8-ʻīniha ke kūkulu ʻia nei.
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Paʻakikī ke hana:Paʻakikī loa (Mohs 9.5), hana ʻoki a hoʻoliʻi i ka manawa.
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4. Gallium Nitride (GaN)
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Nā noi:ʻO nā mana mana alapine kiʻekiʻe (ka hoʻouka wikiwiki ʻana, nā kahua kahua 5G), nā LED polū/lasers.
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Pono:
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ʻO ka neʻe electron kiʻekiʻe kiʻekiʻe loa + ʻākea pūhaka (3.4 eV):Hoʻohui i nā alapine kiʻekiʻe (> 100 GHz) a me ka hana kiʻekiʻe-voltage.
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Haʻahaʻa ma ke kūʻē:Hoʻemi i ka nalowale o ka mana.
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Heteroepitaxy kūpono:Hoʻoulu maʻamau ma luna o ke silikoni, sapphire, a i ʻole SiC substrates, e hōʻemi ana i ke kumukūʻai.
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Nā hemahema:
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Paʻakikī ka ulu ʻana o ka kristal hoʻokahi:ʻO ka Heteroepitaxy ka mea nui, akā ʻo ka lattice mismatch e hoʻolauna i nā hemahema.
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Ke kumu kūʻai kiʻekiʻe:He pipiʻi loa nā substrate GaN maoli (hiki ke kūʻai ʻia kahi wafer 2-iniha he mau tausani USD).
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Nā pilikia hilinaʻi:ʻO nā hanana e like me ka hāʻule ʻana o kēia manawa e pono ai ka loiloi.
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5. Indium Phosphide (InP)
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Nā noi:ʻO nā kamaʻilio optical kiʻekiʻe (lasers, photodetectors), nā mea hana terahertz.
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Pono:
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ʻO ka neʻe electron kiʻekiʻe loa:Kākoʻo > 100 GHz hana, ʻoi aku ka maikaʻi o GaA.
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ʻO ka pūhaka pololei me ka hoʻohālikelike ʻana i ka lōʻihi nalu:Mea kumu no ka 1.3-1.55 μm kamaʻilio fiber optical.
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Nā hemahema:
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ʻAhaʻi a pipiʻi loa:ʻOi aku ke kumukūʻai o ka substrate ma mua o 100x silika, ka nui o ka wafer (4-6 iniha).
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6. Sapphire (Al₂O₃)
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Nā noi:ʻO ke kukui LED (GaN epitaxial substrate), nā mea kūʻai uila uhi aniani.
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Pono:
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Kumukuai haʻahaʻa:ʻOi aku ka maikaʻi ma mua o nā substrate SiC/GaN.
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Paʻa kemika maikaʻi loa:Paʻa ʻino, hoʻokaʻawale loa.
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Mākaʻikaʻi:He kūpono no nā kūkulu LED kūpaʻa.
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Nā hemahema:
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ʻAʻole kūlike ka lattice nui me GaN (>13%):Hoʻokumu i ka nui defect density, e koi ana i nā papa pale.
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Haʻihaʻi maikaʻi ʻole (~ 1/20 o ke silika):Hoʻopau i ka hana o nā LED mana kiʻekiʻe.
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7. Nā Pākuʻi Ceramic (AlN, BeO, etc.)
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Nā noi:Nā mea hoʻolaha wela no nā modula mana kiʻekiʻe.
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Pono:
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ʻO ka hoʻokaʻawale + ʻana i ka wela kiʻekiʻe (AlN: 170–230 W/m·K):He kūpono no ka ʻeke kiʻekiʻe.
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Nā hemahema:
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ʻAʻole-hoʻokahi-kristal:ʻAʻole hiki ke kākoʻo pololei i ka ulu ʻana o ka hāmeʻa, hoʻohana wale ʻia ma ke ʻano he substrates packaging.
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8. Nā Papahana Kūikawā
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SOI (Silicon on Insulator):
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Kapili:Silika/SiO₂/silikona sandwich.
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Pono:Hoʻemi i ka capacitance parasitic, radiation-hardened, leakage suppression (hoʻohana ʻia ma RF, MEMS).
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Nā hemahema:30–50% ʻoi aʻe ka pipiʻi ma mua o ka silika nui.
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Quartz (SiO₂):Hoʻohana ʻia i nā photomasks a me MEMS; pale wela kiʻekiʻe akā palupalu loa.
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daimana:Kiʻekiʻe loa thermal conductivity substrate (>2000 W/m·K), ma lalo o R&D no ka wela loa.
Papa Hōʻuluʻulu Hoʻohālikelike
| Pāpaʻa | Bandgap (eV) | Electron Mobility (cm²/V·s) | ʻO ka hoʻoili wela (W/m·K) | Nui Wafer Nui | Nā noi kumu | Koina |
|---|---|---|---|---|---|---|
| Si | 1.12 | ~1,500 | ~150 | 12-iniha | Loko / Hoʻomanaʻo Chips | Haʻahaʻa loa |
| GaAs | 1.42 | ~8,500 | ~55 | 4–6 iniha | RF / Optoelectronics | Kiʻekiʻe |
| SiC | 3.26 | ~900 | ~490 | 6-īniha (8-īniha R&D) | Nā lako mana / EV | Kiekie loa |
| ʻO GaN | 3.4 | ~2,000 | ~130–170 | 4–6 iniha (heteroepitaxy) | Hoʻouka wikiwiki / RF / LED | Kiʻekiʻe (heteroepitaxy: waena) |
| InP | 1.35 | ~5,400 | ~70 | 4–6 iniha | Nā leka uila / THz | Kiekie loa |
| Sapphire | 9.9 (insulator) | – | ~40 | 4–8 iniha | ʻO nā substrate LED | Haʻahaʻa |
Nā mea nui no ke koho ʻana i ka substrate
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Nā koi hana:GaAs/InP no ke alapine kiʻekiʻe; SiC no ka uila kiʻekiʻe, ka wela kiʻekiʻe; GaAs/InP/GaN no ka optoelectronics.
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Kāohi kumu kūʻai:Makemake nā mea uila uila i ke silika; Hiki i nā māla kiʻekiʻe ke hōʻoia i nā kumukūʻai SiC / GaN.
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Paʻakikī hoʻohui:ʻAʻole hiki ke hoʻololi ʻia ʻo Silicon no ka hoʻohālikelike CMOS.
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Hooponopono wela:Makemake nā noi mana kiʻekiʻe iā SiC a i ʻole GaN e pili ana i ke daimana.
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Oke kaulahao lako:Si > Sapphire > GaAs > SiC > GaN > InP.
Kaulana e hiki mai ana
ʻO ka hoʻohui like ʻole (e laʻa, GaN-on-Si, GaN-on-SiC) e kaulike i ka hana a me ke kumukūʻai, ka hoʻokele holomua ma 5G, nā kaʻa uila, a me ka computing quantum.
Ka manawa hoʻouna: ʻAukake-21-2025






