ʻO nā mea waiwai nui no ka hana semiconductor: nā ʻano o nā substrate wafer

ʻO ka Wafer Substrates ma ke ʻano he mau mea koʻikoʻi ma nā mea semiconductor

ʻO nā substrate Wafer nā mea lawe kino o nā mea semiconductor, a ʻo kā lākou waiwai waiwai e hoʻoholo pololei i ka hana o ka hāmeʻa, kumukūʻai, a me nā kahua noi. Aia ma lalo iho nā ʻano nui o ka wafer substrates me kā lākou mau pono a me nā hemahema:


1.Silika (Si)

  • Māhele Makeke:ʻOi aku ma mua o 95% o ka mākeke semiconductor honua.

  • Pono:

    • Kumukuai haʻahaʻa:Nui nā mea maka (silicon dioxide), nā kaʻina hana oʻo, a me nā ʻoihana waiwai nui.

    • Kūlike kaʻina hana kiʻekiʻe:He oʻo loa ka ʻenehana CMOS, e kākoʻo ana i nā node holomua (e laʻa, 3nm).

    • ʻO ka maikaʻi kristal maikaʻi loa:Hiki ke hoʻoulu ʻia nā wafers nui-anawaena (ma kahi o 12-ʻīniha, 18-ʻīniha ma lalo o ka hoʻomohala ʻana) me ka haʻahaʻa haʻahaʻa.

    • Nā waiwai mechanical paʻa:Maʻalahi e ʻoki, poli, a mālama.

  • Nā hemahema:

    • Awāwa haiki (1.12 eV):ʻO ka leakage kiʻekiʻe i nā mahana kiʻekiʻe, e kaupalena ana i ka pono o ka mana.

    • ʻAʻohe hui pū:He haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa, kūpono ʻole no nā mea optoelectronic e like me nā LED a me nā lasers.

    • ʻO ka neʻe ʻana o ka electron i kaupalena ʻia:Haʻahaʻa haʻahaʻa kiʻekiʻe-frequency hana hoʻohālikelike ʻia me nā semiconductors compound.
      微信图片_20250821152946_179


2.Gallium Arsenide (GaAs)

  • Nā noi:Nā hāmeʻa RF kiʻekiʻe (5G/6G), nā mea optoelectronic (lasers, solar cell).

  • Pono:

    • ʻO ka neʻe ʻana o ka electron kiʻekiʻe (5–6x kēlā o ke silikoni):He kūpono no nā noi wikiwiki kiʻekiʻe e like me ke kamaʻilio hawewe millimeter.

    • ʻAʻohe huikau pololei (1.42 eV):ʻO ka hoʻololi photoelectric kiʻekiʻe, ke kumu o nā laser infrared a me nā LED.

    • ʻO ka wela kiʻekiʻe a me ka pale ʻana i ka radiation:He kūpono no ka aerospace a me ka ʻino.

  • Nā hemahema:

    • Ke kumu kūʻai kiʻekiʻe:Kakaʻikahi ka waiwai, ka ulu ʻana o ke aniani paʻakikī (hiki i ka hoʻokaʻawale ʻana), ka nui wafer palena ʻia (ka nui 6-ʻīniha).

    • Mechanics palupalu:Kūleʻa i ka haʻihaʻi, ka hopena i ka haʻahaʻa o ka hana ʻana.

    • ʻona:Pono ʻo Arsenic i ka mālama koʻikoʻi a me nā kaohi o ke kaiapuni.

微信图片_20250821152945_181

3. Kapili Silika (SiC)

  • Nā noi:ʻO nā mea mana kiʻekiʻe a me nā mana kiʻekiʻe (EV inverters, charging stations), aerospace.

  • Pono:

    • ʻAha bandā ākea (3.26 eV):ʻO ka ikaika haʻihaʻi kiʻekiʻe (10x ka silicon), ka hoʻomanawanui kiʻekiʻe (ka mahana hana> 200 °C).

    • ʻO ke kau wela wela kiʻekiʻe (≈3× silika):ʻOi aku ka maikaʻi o ka hoʻoheheʻe ʻana i ka wela, hiki ke ʻoi aku ka nui o ka mana o ka ʻōnaehana.

    • poho hoololi haahaa:Hoʻomaikaʻi i ka pono hoʻololi mana.

  • Nā hemahema:

    • ʻO ka hoʻomākaukau ʻana i kahi substrate paʻakikī:ʻO ka ulu ʻana o ke aniani lohi (> 1 pule), paʻakikī ka hoʻokele defect (micropipes, dislocations), ke kumu kūʻai kiʻekiʻe loa (5-10x silicon).

    • Nui wafer liʻiliʻi:ʻO ka nui 4-6 iniha; 8-ʻīniha ke kūkulu ʻia nei.

    • Paʻakikī ke hana:Paʻakikī loa (Mohs 9.5), hana ʻoki a hoʻoliʻi i ka manawa.

微信图片_20250821152946_183


4. Gallium Nitride (GaN)

  • Nā noi:ʻO nā mana mana alapine kiʻekiʻe (ka hoʻouka wikiwiki ʻana, nā kahua kahua 5G), nā LED polū/lasers.

  • Pono:

    • ʻO ka neʻe electron kiʻekiʻe kiʻekiʻe loa + ʻākea pūhaka (3.4 eV):Hoʻohui i nā alapine kiʻekiʻe (> 100 GHz) a me ka hana kiʻekiʻe-voltage.

    • Haʻahaʻa ma ke kūʻē:Hoʻemi i ka nalowale o ka mana.

    • Heteroepitaxy kūpono:Hoʻoulu maʻamau ma luna o ke silikoni, sapphire, a i ʻole SiC substrates, e hōʻemi ana i ke kumukūʻai.

  • Nā hemahema:

    • Paʻakikī ka ulu ʻana o ka kristal hoʻokahi:ʻO ka Heteroepitaxy ka mea nui, akā ʻo ka lattice mismatch e hoʻolauna i nā hemahema.

    • Ke kumu kūʻai kiʻekiʻe:He pipiʻi loa nā substrate GaN maoli (hiki ke kūʻai ʻia kahi wafer 2-iniha he mau tausani USD).

    • Nā pilikia hilinaʻi:ʻO nā hanana e like me ka hāʻule ʻana o kēia manawa e pono ai ka loiloi.

微信图片_20250821152945_185


5. Indium Phosphide (InP)

  • Nā noi:ʻO nā kamaʻilio optical kiʻekiʻe (lasers, photodetectors), nā mea hana terahertz.

  • Pono:

    • ʻO ka neʻe electron kiʻekiʻe loa:Kākoʻo > 100 GHz hana, ʻoi aku ka maikaʻi o GaA.

    • ʻO ka pūhaka pololei me ka hoʻohālikelike ʻana i ka lōʻihi nalu:Mea kumu no ka 1.3-1.55 μm kamaʻilio fiber optical.

  • Nā hemahema:

    • ʻAhaʻi a pipiʻi loa:ʻOi aku ke kumukūʻai o ka substrate ma mua o 100x silika, ka nui o ka wafer (4-6 iniha).

微信图片_20250821152946_187


6. Sapphire (Al₂O₃)

  • Nā noi:ʻO ke kukui LED (GaN epitaxial substrate), nā mea kūʻai uila uhi aniani.

  • Pono:

    • Kumukuai haʻahaʻa:ʻOi aku ka maikaʻi ma mua o nā substrate SiC/GaN.

    • Paʻa kemika maikaʻi loa:Paʻa ʻino, hoʻokaʻawale loa.

    • Mākaʻikaʻi:He kūpono no nā kūkulu LED kūpaʻa.

  • Nā hemahema:

    • ʻAʻole kūlike ka lattice nui me GaN (>13%):Hoʻokumu i ka nui defect density, e koi ana i nā papa pale.

    • Haʻihaʻi maikaʻi ʻole (~ 1/20 o ke silika):Hoʻopau i ka hana o nā LED mana kiʻekiʻe.

微信图片_20250821152946_189


7. Nā Pākuʻi Ceramic (AlN, BeO, etc.)

  • Nā noi:Nā mea hoʻolaha wela no nā modula mana kiʻekiʻe.

  • Pono:

    • ʻO ka hoʻokaʻawale + ʻana i ka wela kiʻekiʻe (AlN: 170–230 W/m·K):He kūpono no ka ʻeke kiʻekiʻe.

  • Nā hemahema:

    • ʻAʻole-hoʻokahi-kristal:ʻAʻole hiki ke kākoʻo pololei i ka ulu ʻana o ka hāmeʻa, hoʻohana wale ʻia ma ke ʻano he substrates packaging.

微信图片_20250821152945_191


8. Nā Papahana Kūikawā

  • SOI (Silicon on Insulator):

    • Kapili:Silika/SiO₂/silikona sandwich.

    • Pono:Hoʻemi i ka capacitance parasitic, radiation-hardened, leakage suppression (hoʻohana ʻia ma RF, MEMS).

    • Nā hemahema:30–50% ʻoi aʻe ka pipiʻi ma mua o ka silika nui.

  • Quartz (SiO₂):Hoʻohana ʻia i nā photomasks a me MEMS; pale wela kiʻekiʻe akā palupalu loa.

  • daimana:Kiʻekiʻe loa thermal conductivity substrate (>2000 W/m·K), ma lalo o R&D no ka wela loa.

 

微信图片_20250821152945_193


Papa Hōʻuluʻulu Hoʻohālikelike

Pāpaʻa Bandgap (eV) Electron Mobility (cm²/V·s) ʻO ka hoʻoili wela (W/m·K) Nui Wafer Nui Nā noi kumu Koina
Si 1.12 ~1,500 ~150 12-iniha Loko / Hoʻomanaʻo Chips Haʻahaʻa loa
GaAs 1.42 ~8,500 ~55 4–6 iniha RF / Optoelectronics Kiʻekiʻe
SiC 3.26 ~900 ~490 6-īniha (8-īniha R&D) Nā lako mana / EV Kiekie loa
ʻO GaN 3.4 ~2,000 ~130–170 4–6 iniha (heteroepitaxy) Hoʻouka wikiwiki / RF / LED Kiʻekiʻe (heteroepitaxy: waena)
InP 1.35 ~5,400 ~70 4–6 iniha Nā leka uila / THz Kiekie loa
Sapphire 9.9 (insulator) ~40 4–8 iniha ʻO nā substrate LED Haʻahaʻa

Nā mea nui no ke koho ʻana i ka substrate

  • Nā koi hana:GaAs/InP no ke alapine kiʻekiʻe; SiC no ka uila kiʻekiʻe, ka wela kiʻekiʻe; GaAs/InP/GaN no ka optoelectronics.

  • Kāohi kumu kūʻai:Makemake nā mea uila uila i ke silika; Hiki i nā māla kiʻekiʻe ke hōʻoia i nā kumukūʻai SiC / GaN.

  • Paʻakikī hoʻohui:ʻAʻole hiki ke hoʻololi ʻia ʻo Silicon no ka hoʻohālikelike CMOS.

  • Hooponopono wela:Makemake nā noi mana kiʻekiʻe iā SiC a i ʻole GaN e pili ana i ke daimana.

  • Oke kaulahao lako:Si > Sapphire > GaAs > SiC > GaN > InP.


Kaulana e hiki mai ana

ʻO ka hoʻohui like ʻole (e laʻa, GaN-on-Si, GaN-on-SiC) e kaulike i ka hana a me ke kumukūʻai, ka hoʻokele holomua ma 5G, nā kaʻa uila, a me ka computing quantum.


Ka manawa hoʻouna: ʻAukake-21-2025