English

ʻO ka wafer SiC ʻano-P 4H/6H-P 3C-N 6'īniha ka mānoanoa 350 μm me ke kuhikuhi pālahalaha mua

ʻO ka wafer SiC ʻano-P 4H/6H-P 3C-N 6'īniha ka mānoanoa 350 μm me ke kuhikuhi pālahalaha mua Kiʻi i hōʻike ʻia
  • ʻO ka wafer SiC ʻano-P 4H/6H-P 3C-N 6'īniha ka mānoanoa 350 μm me ke kuhikuhi pālahalaha mua
  • ʻO ka wafer SiC ʻano-P 4H/6H-P 3C-N 6'īniha ka mānoanoa 350 μm me ke kuhikuhi pālahalaha mua
  • ʻO ka wafer SiC ʻano-P 4H/6H-P 3C-N 6'īniha ka mānoanoa 350 μm me ke kuhikuhi pālahalaha mua
  • ʻO ka wafer SiC ʻano-P 4H/6H-P 3C-N 6'īniha ka mānoanoa 350 μm me ke kuhikuhi pālahalaha mua
  • ʻO ka wafer SiC ʻano-P 4H/6H-P 3C-N 6'īniha ka mānoanoa 350 μm me ke kuhikuhi pālahalaha mua

Wehewehe Pōkole:

ʻO ka wafer SiC ʻano-P, 4H/6H-P 3C-N, he mea semiconductor 6-'īniha me ka mānoanoa o 350 μm a me ke kuhikuhi pālahalaha mua, i hoʻolālā ʻia no nā noi uila holomua. ʻIke ʻia no kona conductivity thermal kiʻekiʻe, ka voltage breakdown kiʻekiʻe, a me ke kū'ē ʻana i nā mahana koʻikoʻi a me nā wahi corrosive, kūpono kēia wafer no nā mea uila hana kiʻekiʻe. Hoʻokomo ka doping ʻano-P i nā lua ma ke ʻano he mau mea lawe ukana mua, e kūpono ai no nā uila mana a me nā noi RF. Hōʻoia kona ʻano paʻa i ka hana paʻa ma lalo o nā kūlana voltage kiʻekiʻe a me ke alapine kiʻekiʻe, e kūpono ai no nā mea mana, nā uila wela kiʻekiʻe, a me ka hoʻololi ikehu kiʻekiʻe. Hōʻoia ka kuhikuhi pālahalaha mua i ka hoʻonohonoho pololei ʻana i ke kaʻina hana, e hāʻawi ana i ke kūlike i ka hana ʻana o ka mea hana.


Nā hiʻohiʻona

Nā Kikoʻī4H/6H-P ʻAno SiC Composite Substrates Papa kuhikuhi maʻamau

6 ʻīniha ke anawaena o ka Silicon Carbide (SiC) Substrate Nā kikoʻī

Papa Hana ʻana o ka Zero MPDPapa (Z Papa) Hana MaʻamauPapa (P Papa) Papa Dummy (D Papa)
Anawaena 145.5 mm~150.0 mm
Mānoanoa 350 μm ± 25 μm
Hoʻonohonoho Wafer -Offaxis: 2.0°-4.0° i ka ʻaoʻao [1120] ± 0.5° no 4H/6H-P, Ma ke axis:〈111〉± 0.5° no 3C-N
Ka nui o ka micropipe 0 kenimika-2
Ke kū'ē ʻana ʻano-p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
ʻano-n 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Kūlana Pālahalaha Mua 4H/6H-P -{1010} ± 5.0°
3C-N -{110} ± 5.0°
Ka Lōʻihi Palahalaha Mua 32.5 mm ± 2.0 mm
Ka Lōʻihi Pālahalaha Lua 18.0 mm ± 2.0 mm
Kūlana Pālahalaha Lua Ke alo Silicon i luna: 90° CW. mai Prime flat ± 5.0°
Hoʻokaʻawale ʻana i ka lihi 3 mm 6 mm
LTV/TTV/Kakaka/Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm
ʻOʻoleʻa Polani Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm
Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe ʻAʻohe Ka lōʻihi hui ≤ 10 mm, ka lōʻihi hoʻokahi ≤2 mm
Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe ʻĀpana hōʻuluʻulu ≤0.05% ʻĀpana hōʻuluʻulu ≤0.1%
Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe ʻAʻohe ʻĀpana hōʻuluʻulu ≤3%
Nā Hoʻokomo Kalapona ʻIke ʻĀpana hōʻuluʻulu ≤0.05% ʻĀpana hōʻuluʻulu ≤3%
Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe ʻAʻohe Ka lōʻihi huina ≤1 × ke anawaena wafer
Kiʻekiʻe nā ʻāpana lihi ma o ka mālamalama ikaika ʻAʻohe mea i ʻae ʻia ≥0.2mm ka laulā a me ka hohonu 5 i ʻae ʻia, ≤1 mm kēlā me kēia
Ka haumia ʻana o ka ʻili Silicon ma o ka ikaika kiʻekiʻe ʻAʻohe
Ka hoʻopili ʻana Kaseta Wafer Multi-wafer a i ʻole ka Pahu Wafer Hoʻokahi

Nā memo:

※ Pili nā palena kīnā i ka ʻili wafer holoʻokoʻa koe wale nō ka ʻāpana hoʻokaʻawale lihi. # Pono e nānā ʻia nā ʻōpala ma ka ʻaoʻao Si o

ʻO ka wafer SiC ʻano-P, 4H/6H-P 3C-N, me kona nui 6-'īniha a me ka mānoanoa 350 μm, he kuleana koʻikoʻi ia i ka hana ʻoihana o nā mea uila mana hana kiʻekiʻe. ʻO kona conductivity thermal maikaʻi loa a me ke voltage breakdown kiʻekiʻe e kūpono ia no ka hana ʻana i nā ʻāpana e like me nā kuapo mana, nā diode, a me nā transistors i hoʻohana ʻia i nā wahi wela kiʻekiʻe e like me nā kaʻa uila, nā pūnaewele mana, a me nā ʻōnaehana ikehu hou. ʻO ka hiki o ka wafer ke hana pono i nā kūlana paʻakikī e hōʻoiaʻiʻo i ka hana hilinaʻi i nā noi ʻoihana e koi ana i ka nui o ka mana a me ka pono o ka ikehu. Eia kekahi, ʻo kona kuhikuhi pālahalaha mua e kōkua i ka hoʻonohonoho pololei ʻana i ka wā o ka hana ʻana o ka hāmeʻa, e hoʻonui ana i ka pono o ka hana a me ke kūlike o ka huahana.

ʻO nā pono o nā substrates composite N-type SiC e komo pū ana

  • Ka Hoʻokele Wera KiʻekiʻeHoʻopau pono nā wafers SiC ʻano-P i ka wela, e kūpono ai lākou no nā noi wela kiʻekiʻe.
  • Ka Uila Haʻihaʻi Kiʻekiʻe: Hiki ke kū i nā voltages kiʻekiʻe, e hōʻoiaʻiʻo ana i ka hilinaʻi i nā mea uila mana a me nā mea uila kiʻekiʻe.
  • Ke kū'ē ʻana i nā wahi ʻinoʻO ke kūpaʻa maikaʻi loa i nā kūlana koʻikoʻi, e like me ke kiʻekiʻe o nā mahana a me nā wahi ʻino.
  • Hoʻololi Mana KūponoHoʻomaʻalahi ka doping ʻano-P i ka lawelawe mana kūpono, e kūpono ai ka wafer no nā ʻōnaehana hoʻololi ikehu.
  • Kūlana Pālahalaha Mua: Hōʻoia i ke kaulike pololei i ka wā o ka hana ʻana, e hoʻomaikaʻi ana i ka pololei a me ke kūlike o ka hāmeʻa.
  • ʻAno lahilahi (350 μm)ʻO ka mānoanoa kūpono o ka wafer e kākoʻo i ka hoʻohui ʻana i nā hāmeʻa uila holomua i kaupalena ʻia i ka hakahaka.

Ma keʻano holoʻokoʻa, hāʻawi ka wafer SiC ʻano-P, 4H/6H-P 3C-N, i nā pono like ʻole e kūpono loa ai no nā noi ʻoihana a me nā uila. ʻO kona conductivity thermal kiʻekiʻe a me ka breakdown voltage e hiki ai ke hana hilinaʻi i nā wahi wela kiʻekiʻe a me nā voltage kiʻekiʻe, ʻoiai ʻo kona kūpaʻa ʻana i nā kūlana ʻino e hōʻoiaʻiʻo ana i ka lōʻihi. ʻAe ka doping ʻano-P no ka hoʻololi mana kūpono, e kūpono ai no nā uila mana a me nā ʻōnaehana ikehu. Eia kekahi, ʻo ke kuhikuhi pālahalaha mua o ka wafer e hōʻoiaʻiʻo ana i ka hoʻonohonoho pololei i ka wā o ke kaʻina hana, e hoʻonui ana i ke kūlike o ka hana. Me ka mānoanoa o 350 μm, kūpono loa ia no ka hoʻohui ʻana i nā mea hana holomua a paʻa.

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