Nā huahana
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ʻO ke kumu hoʻohālike AlN ma FSS 2'īniha 4'īniha NPSS/FSS no ka ʻāpana semiconductor
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ʻO Gallium Nitride (GaN) Epitaxial i ulu ʻia ma nā Sapphire Wafers 4 ʻīniha 6 ʻīniha no MEMS
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ʻO Gallium Nitride ma ka wafer Silicon 4 iniha 6 iniha Tailored Si Substrate Orientation, Resistivity, a me nā koho N-type/P-type
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Nā Wafers Epitaxial GaN-on-SiC i hoʻopilikino ʻia (100mm, 150mm) - Nā Koho Substrate SiC he nui (4H-N, HPSI, 4H/6H-P)
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ʻO GaN-on-Diamond Wafers 4'īniha 6'īniha Ka mānoanoa epi holoʻokoʻa (micron) 0.6 ~ 2.5 a i ʻole i hoʻopilikino ʻia no nā noi alapine kiʻekiʻe
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Pahu lawe wafer FOSB 25 mau hakahaka no ka wafer 12'īniha Ka mamao kikoʻī no nā hana hana aunoa Nā mea maʻemaʻe loa
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12'īniha (300mm) Pahu hoʻouna wehe mua Pahu lawe wafer FOSB 25pcs ka nui no ka lawelawe ʻana a me ka hoʻouna ʻana i nā wafer Hana hana aunoa
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Nā Lenses Precision Monocrystalline Silicon (Si) - Nā Nui Maʻamau a me nā Uhi no ka Optoelectronics a me ke Kiʻi Infrared
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Nā Aniani Silicon Crystal Single Crystal (Si) Maʻemaʻe Kiʻekiʻe i Hoʻopilikino ʻia - Nā Nui a me nā Uhi i Hoʻopilikino ʻia no nā Hoʻohana Infrared a me THz (1.2-7µm, 8-12µm)
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ʻO ka puka makani ʻano Sapphire Step-Type Optical i hoʻopilikino ʻia, Al2O3 Single Crystal, High Purity, Diameter 45mm, Mānoanoa 10mm, ʻoki ʻia me ka laser a poli ʻia
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Puka makani ʻanuʻu Sapphire hana kiʻekiʻe, Al2O3 Crystal hoʻokahi, uhi ʻia me ka moakaka, nā ʻano a me nā nui i hoʻopilikino ʻia no nā noi optical presisi
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ʻO ka Pin Lift Sapphire Hana Kiʻekiʻe, Pure Al2O3 Single Crystal no nā ʻōnaehana hoʻoili Wafer - Nā nui maʻamau, Kūlana kiʻekiʻe no nā noi kikoʻī