ʻO nā lako ulu ʻo Sapphire Ingot Czochralski CZ Method no ka hana ʻana i nā wafers Sapphire 2inch-12inch

ʻO ke ʻano hana ulu ʻana o ka Sapphire Ingot Czochralski CZ no ka hana ʻana i nā wafers Sapphire 2inch-12inch Kiʻi i hōʻike ʻia

Wehewehe Pōkole:

ʻO ka Lako Hana Hoʻoulu ʻo Sapphire Ingot (Czochralski Method) he ʻōnaehana ʻoi loa i hoʻolālā ʻia no ka ulu ʻana o ka kristal hoʻokahi sapphire maʻemaʻe kiʻekiʻe a haʻahaʻa ka hemahema. Hiki i ke ʻano hana Czochralski (CZ) ke kaohi pololei i ka wikiwiki o ka huki ʻana o ka kristal hua (0.5-5 mm/h), ka wikiwiki o ka hoʻohuli ʻana (5-30 rpm), a me nā gradients mahana i loko o kahi ipu hoʻoheheʻe iridium, e hana ana i nā kristal axisymmetric a hiki i 12 ʻīniha (300 mm) ke anawaena. Kākoʻo kēia lako i ka kaohi ʻana i ke kuhikuhi ʻana o ka kristal C/A-plane, e hiki ai ke ulu o ka sapphire optical-grade, electronic-grade, a me ka doped sapphire (e laʻa, Cr³⁺ ruby, Ti³⁺ star sapphire).

Hāʻawi ʻo XKH i nā hoʻonā āpau-a-hopena, me ka hoʻopilikino ʻana i nā lako (hana wafer 2-12-'īniha), ka hoʻonui ʻana i ke kaʻina hana (ka nui o nā hemahema <100/cm²), a me ke aʻo loea, me ka hoʻopuka mahina o 5,000+ wafers no nā noi e like me nā substrates LED, GaN epitaxy, a me ka hoʻopili semiconductor.

E leka uila mai iā mākou

Nā hiʻohiʻona

Kumu Hana

Hana ʻia ke ʻano hana CZ ma o nā hana aʻe:
1. Hoʻoheheʻe ʻana i nā mea maka: Hoʻoheheʻe ʻia ka Al₂O₃ kiʻekiʻe-maʻemaʻe (maʻemaʻe >99.999%) i loko o kahi ipu hoʻoheheʻe iridium ma 2050–2100°C.
2. Hoʻolauna ʻana i ka Crystal Hua: Hoʻohaʻahaʻa ʻia kahi kristal hua i loko o ka mea heheʻe, a ukali ʻia e ka huki wikiwiki ʻana e hana i kahi ʻāʻī (ke anawaena <1 mm) e hoʻopau i nā dislocations.
3. Ka Hoʻokumu ʻana o ka Poʻohiwi a me ka Ulu Nui: Hoʻemi ʻia ka wikiwiki o ka huki ʻana i 0.2–1 mm/h, e hoʻonui mālie ana i ke anawaena kristal i ka nui i manaʻo ʻia (e laʻa, 4–12 ʻīniha).
4. Hoʻoheheʻe ʻia a me ka hoʻolulu ʻana: Hoʻolulu ʻia ke aniani ma 0.1–0.5°C/min e hōʻemi i ka haki ʻana i hoʻokumu ʻia e ke kaumaha wela.
5. Nā ʻAno Crystal Hoʻohālikelike:
Papa Uila: Nā substrates Semiconductor (TTV <5 μm)
Papa ʻIke: nā puka makani laser UV (transmittance >90%@200 nm)
Nā ʻano like ʻole i hoʻohui ʻia: Ruby (Cr³⁺ concentration 0.01–0.5 wt.%), tubing sapeiro polū

Nā ʻĀpana ʻŌnaehana Koʻikoʻi

1. ʻŌnaehana Hoʻoheheʻe
Iridium Crucible: Kūpaʻa i 2300°C, kū i ka pala, kūpono me nā mea heheʻe nui (100–400 kg).
Ka umu hoʻomehana hoʻokomo: Ka mana wela kūʻokoʻa multi-zone (± 0.5°C), nā gradients thermal i hoʻomaikaʻi ʻia.

2. ʻŌnaehana Huki a me ka Hoʻohuli
Motoka Servo Kiʻekiʻe-Kiko: Hoʻonā huki 0.01 mm/h, concentricity rotational <0.01 mm.
Sila Wai Uku Makeneka: Hoʻoili ʻole ʻia no ka ulu mau ʻana (>72 mau hola).

3. ʻŌnaehana Mana Wela
Mana PID Pani-Loop: Hoʻoponopono mana manawa maoli (50–200 kW) e hoʻopaʻa i ke kahua wela.
Ka Palekana Kinoea Inert: Ka hui ʻana o Ar/N₂ (99.999% maʻemaʻe) e pale aku i ka oxidation.

4. Hana Hoʻokele Hana a me ka Nānā ʻana
Ka Nānā ʻana i ke Anawaena CCD: Manaʻo pane manawa maoli (pololei ±0.01 mm).
Infrared Thermography: Nānā i ke ʻano o ka pilina paʻa-wai.

Hoʻohālikelike ʻana o ke ʻano hana CZ vs. KY

Palena	Ke ʻano hana CZ	Ke ʻano hana KY
Nui Loa o ke Aniani	12 ʻīniha (300 mm)	400 mm (ʻāpana ʻano pea)
Ka nui o ke kīnā	<100/cm²	<50/cm²
Ka wikiwiki o ka ulu ʻana	0.5–5 mm/h	0.1–2 mm/h
Ka hoʻohana ʻana i ka ikehu	50–80 kWh/kg	80–120 kWh/kg
Nā noi	Nā substrates LED, GaN epitaxy	Nā puka makani ʻōlinolino, nā ʻāpana nui
Kumukūʻai	Waena (hoʻopukapuka lako kiʻekiʻe)	Kiʻekiʻe (kaʻina hana paʻakikī)

Nā Noi Koʻikoʻi

1. ʻOihana Semiconductor
GaN Epitaxial Substrates: nā wafers 2–8-'īniha (TTV <10 μm) no nā Micro-LED a me nā diode laser.
Nā Wafers SOI: ʻO ka ʻoʻoleʻa o ka ʻili <0.2 nm no nā ʻāpana i hoʻohui ʻia me 3D.

2. Optoelectronics
Nā Puka makani Laser UV: Kū i ka mana o 200 W/cm² no nā optics lithography.
Nā ʻĀpana Infrared: Ka helu omo <10⁻³ cm⁻¹ no ke kiʻi wela.

3. Nā Uila Mea Kūʻai
Nā Uhi Kāmela Kelepona akamai: Hoʻomaikaʻi ʻia ke kūpaʻa ʻana i ke kahakaha ʻana me ka paʻakikī Mohs 9, 10 ×.
Nā Hōʻikeʻike Uaki Akamai: Mānoanoa 0.3–0.5 mm, transmittance >92%.

4. Pale Kaua a me ka Lehulehu
Nuclear Reactor Windows: Ke ahonui i ka pāhawewe a hiki i ka 10¹⁶ n/cm².
Nā Aniani Laser Mana Kiʻekiʻe: Hoʻololi wela <λ/20@1064 nm.

Nā lawelawe a XKH

1. Hoʻopilikino ʻana i nā lako
Hoʻolālā Keʻena Hoʻonui: Nā hoʻonohonoho Φ200–400 mm no ka hana wafer 2–12-'īniha.
Ka Maʻalahi o ka Doping: Kākoʻo i ka doping honua laha ʻole (Er/Yb) a me ka metala hoʻololi (Ti/Cr) no nā waiwai optoelectronic i hana kūikawā ʻia.

2. Kākoʻo Hoʻopau-a-Hopena
Hoʻonui Hana: Nā kuhikuhi i hōʻoia mua ʻia (50+) no nā LED, nā mea RF, a me nā ʻāpana i hoʻopaʻakikī ʻia e ka radiation.
Pūnaewele Lawelawe Honua: Nā hōʻailona mamao 24/7 a me ka mālama ʻana ma kahi me ka palapala hoʻokō 24 mahina.

3. Ka Hana ʻana ma lalo
Hana ʻana i nā wafer: ʻOkiʻoki, wili, a me ka hoʻowali ʻana no nā wafer 2-12-'īniha (C/A-plane).
Nā Huahana Waiwai Hoʻohui:
Nā ʻĀpana Maka: Nā puka makani UV/IR (mānoanoa 0.5–50 mm).
Nā Mea Hana Pae Hoʻonani: Cr³⁺ ruby (palapala hōʻoia GIA), Ti³⁺ star sapphire.

4. Alakaʻi ʻenehana
Nā Palapala Hōʻoia: Nā wafers EMI-compliant.
Nā Palapala Sila Nui: Nā palapala sila nui i ka hana hou ʻana o ke ʻano CZ.

Hopena

Hāʻawi nā lako hana CZ i ka hoʻohālikelike nui, nā helu kīnā haʻahaʻa loa, a me ke kūpaʻa o ke kaʻina hana kiʻekiʻe, e lilo ia i pae hoʻohālikelike ʻoihana no nā LED, semiconductor, a me nā noi pale. Hāʻawi ʻo XKH i ke kākoʻo piha mai ka hoʻolaha ʻana o nā lako a hiki i ka hana ʻana ma hope o ka ulu ʻana, e hiki ai i nā mea kūʻai aku ke hoʻokō i ka hana kristal sapphire kiʻekiʻe a me ke kumukūʻai kūpono.