ʻO ka Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity no nā aniani Ar

Wehewehe Pōkole:

ʻO nā substrates silicon carbide semi-insulating kiʻekiʻe-maʻemaʻe (SiC) he mau mea kūikawā i hana ʻia mai ka silicon carbide, i hoʻohana nui ʻia i ka hana ʻana i nā mea uila mana, nā mea hana alapine lekiō (RF), a me nā ʻāpana semiconductor wela-alapine kiʻekiʻe. ʻO Silicon carbide, ma ke ʻano he mea semiconductor ākea-bandgap, hāʻawi i nā waiwai uila, wela, a me nā mechanical maikaʻi loa, e kūpono loa ia no nā noi ma nā wahi voltage kiʻekiʻe, alapine kiʻekiʻe, a me nā wela kiʻekiʻe.

E leka uila mai iā mākou

Nā hiʻohiʻona

Kiʻikuhi kikoʻī

ʻIke Huahana o nā Wafers SiC Semi-Insulating

Ua hoʻolālā ʻia kā mākou High-Purity Semi-Insulating SiC Wafers no nā mea uila mana holomua, nā ʻāpana RF/microwave, a me nā noi optoelectronic. Hana ʻia kēia mau wafers mai nā kristal hoʻokahi 4H- a i ʻole 6H-SiC kiʻekiʻe, me ka hoʻohana ʻana i kahi ʻano ulu Physical Vapor Transport (PVT) i hoʻomaʻemaʻe ʻia, a ukali ʻia e ka hoʻoheheʻe ʻana i ka pae hohonu. ʻO ka hopena he wafer me nā waiwai koʻikoʻi e like me kēia:

Ke kū'ē kiʻekiʻe loa: ≥1×10¹² Ω·cm, e hoʻēmi pono ana i nā kahe leakage i nā mea hoʻololi uila kiʻekiʻe.
Ka laulā o ka Bandgap (~3.2 eV)Hoʻomaopopo i ka hana maikaʻi loa ma nā wahi wela kiʻekiʻe, kahua kiʻekiʻe, a me nā wahi e nui ai ka radiation.
Ka Hoʻokele Wela Kūikawā: >4.9 W/cm·K, e hāʻawi ana i ka hoʻopuehu wela kūpono i nā noi mana kiʻekiʻe.
Ikaika Mekanika KiʻekiʻeMe ka paʻakikī Mohs o 9.0 (ʻo ka lua wale nō ma hope o ke daimana), ka hoʻonui wela haʻahaʻa, a me ke kūpaʻa kemika ikaika.
ʻIli Laumania ʻAtomaʻO Ra < 0.4 nm a me ka nui o ke kīnā < 1/cm², kūpono no ka MOCVD/HVPE epitaxy a me ka hana micro-nano.

Nā Nui i LoaʻaʻO nā nui maʻamau e komo pū me 50, 75, 100, 150, a me 200 mm (2"–8"), me nā anawaena maʻamau i loaʻa a hiki i 250 mm.
Pae Mānoanoa: 200–1,000 μm, me ka hoʻomanawanui o ±5 μm.

Ke Kaʻina Hana Hana o nā Wafers SiC Semi-Insulating

Ka Hoʻomākaukau ʻana i ka Pauka SiC Maʻemaʻe Kiʻekiʻe

Mea HoʻomakaʻO ka pauka SiC 6N-grade, i hoʻomaʻemaʻe ʻia me ka hoʻohana ʻana i ka sublimation vacuum multi-stage a me nā hana thermal, e hōʻoiaʻiʻo ana i ka haumia metala haʻahaʻa (Fe, Cr, Ni < 10 ppb) a me ka liʻiliʻi o nā inclusions polycrystalline.

Ka ulu ʻana o ka PVT Single-Crystal i hoʻololi ʻia

KaiapuniKokoke i ka hakahaka (10⁻³–10⁻² Torr).
Mahana: Ke ipu hoʻoheheʻe graphite i hoʻomehana ʻia i ~2,500 °C me kahi gradient thermal i kāohi ʻia o ΔT ≈ 10–20 °C/cm.
Kahe Kinoea a me ka Hoʻolālā ʻana o ka ipu hoʻoheheʻeʻO nā mea hoʻokaʻawale ipu hoʻoheheʻe i hana ʻia a me nā porous e hōʻoia i ka hoʻolaha like ʻana o ka mahu a kāohi i ka nucleation i makemake ʻole ʻia.
Ka Hānai a me ka Hoʻohuli ʻana i ka HanaʻO ka hoʻopiha hou ʻana i ka pauka SiC a me ka hoʻohuli ʻana o ke koʻokoʻo kristal i kēlā me kēia manawa e hopena i nā mānoanoa dislocation haʻahaʻa (<3,000 cm⁻²) a me ke kuhikuhi mau ʻana o 4H/6H.

Hoʻoheheʻe ʻana i ka uku hoʻopaʻi hohonu

ʻO ka Hydrogen Anneal: Hana ʻia i ka lewa H₂ ma nā mahana ma waena o 600–1,400 °C e hoʻāla i nā pahele hohonu a hoʻopaʻa i nā mea lawe kūloko.
N/Al Co-Doping (Koho)ʻO ka hoʻohui ʻana o Al (mea hoʻokipa) a me N (mea hāʻawi) i ka wā o ka ulu ʻana a i ʻole ma hope o ka ulu ʻana o CVD e hana i nā hui mea hāʻawi-mea hoʻokipa paʻa, e hoʻokele ana i nā piko resistivity.

ʻOki pololei a me ka Lapping Multi-Stage

ʻOki ʻana i ka uea daimanaʻO nā wafers i ʻoki ʻia i ka mānoanoa o 200–1,000 μm, me ka liʻiliʻi o ka pōʻino a me ka hoʻomanawanui o ±5 μm.
Kaʻina Hana Lapping: Hoʻopau nā mea abrasive daimana coarseful mai ka ʻoki a i ka maikaʻi i ka pōʻino o ka ʻoki ʻana, e hoʻomākaukau ana i ka wafer no ka wili ʻana.

Ka Hoʻopili Kemika Mekanika (CMP)

Pāpaho HoʻopiliʻO ka slurry Nano-oxide (SiO₂ a i ʻole CeO₂) i loko o kahi hopena alkaline akahai.
Ka Mana HanaʻO ka poli ʻana me ke kaumaha haʻahaʻa e hōʻemi i ka ʻoʻoleʻa, e hoʻokō ana i ka ʻoʻoleʻa RMS o 0.2–0.4 nm a me ka hoʻopau ʻana i nā ʻōpala liʻiliʻi.

Hoʻomaʻemaʻe hope loa a me ka hoʻopili ʻana

Hoʻomaʻemaʻe UltrasonicKe kaʻina hana hoʻomaʻemaʻe he nui nā ʻanuʻu (mea hoʻoheheʻe organik, nā hana ʻakika/kumu, a me ka holoi wai deionized) ma kahi lumi maʻemaʻe Class-100.
Sila a me ka hoʻopili ʻanaKa hoʻomaloʻo ʻana o ka wafer me ka purge naikokene, i hoʻopaʻa ʻia i loko o nā ʻeke pale i piha i ka naikokene a hoʻopaʻa ʻia i loko o nā pahu waho anti-static, dampening vibration.

Nā kikoʻī o nā Wafers SiC Semi-Insulating

Hana Huahana	Papa P	Papa D
I. Nā Palena Crystal	I. Nā Palena Crystal	I. Nā Palena Crystal
ʻAno Polytype Crystal	4H	4H
ʻImi Kuhikuhi Refractive a	>2.6 @589nm	>2.6 @589nm
Ka helu omo a	≤0.5% @450-650nm	≤1.5% @450-650nm
MP Transmittance a (ʻAʻohe uhi ʻia)	≥66.5%	≥66.2%
Uapo a	≤0.3%	≤1.5%
Hoʻokomo ʻia ʻana o Polytype a	ʻAʻole ʻae ʻia	ʻĀpana hōʻuluʻulu ≤20%
Ka nui o ka micropipe a	≤0.5 /cm²	≤2 /cm²
ʻAʻohe Hexagonal a	ʻAʻole ʻae ʻia	ʻAʻohe
Hoʻokomo ʻia ʻaoʻao a	ʻAʻole ʻae ʻia	ʻAʻohe
Hoʻokomo ʻia ʻo MP	ʻAʻole ʻae ʻia	ʻAʻohe
II. Nā Palena Mekanika	II. Nā Palena Mekanika	II. Nā Palena Mekanika
Anawaena	150.0 mm +0.0 mm / -0.2 mm	150.0 mm +0.0 mm / -0.2 mm
Kūlana ʻIli	{0001} ±0.3°	{0001} ±0.3°
Ka Lōʻihi Palahalaha Mua	ʻOki	ʻOki
Ka Lōʻihi Pālahalaha Lua	ʻAʻohe pā hale lua	ʻAʻohe pā hale lua
Kuhikuhi Notch	<1-100> ±2°	<1-100> ±2°
Kihi Notch	90° +5° / -1°	90° +5° / -1°
Ka Hohonu o ka Notch	1 mm mai ka lihi +0.25 mm / -0.0 mm	1 mm mai ka lihi +0.25 mm / -0.0 mm
Ka mālama ʻana i ka ʻili	C-maka, Si-maka: Chemo-Mechanical Polishing (CMP)	C-maka, Si-maka: Chemo-Mechanical Polishing (CMP)
Ka Lihi Wafer	Chamfered (Poepoe)	Chamfered (Poepoe)
ʻO ka ʻOʻoleʻa o ka ʻIli (AFM) (5μm x 5μm)	Si-maka, C-maka: Ra ≤ 0.2 nm	Si-maka, C-maka: Ra ≤ 0.2 nm
Mānoanoa a (Tropel)	500.0 μm ± 25.0 μm	500.0 μm ± 25.0 μm
LTV (Tropel) (40mm x 40mm) a	≤ 2 μm	≤ 4 μm
ʻOkoʻa o ka mānoanoa holoʻokoʻa (TTV) a (Tropel)	≤ 3 μm	≤ 5 μm
Kakaka (Waiwai Loa) a (Tropel)	≤ 5 μm	≤ 15 μm
Warp a (Tropel)	≤ 15 μm	≤ 30 μm
III. Nā Palena ʻIli	III. Nā Palena ʻIli	III. Nā Palena ʻIli
ʻĀpana/Notch	ʻAʻole ʻae ʻia	≤ 2 pcs, kēlā me kēia lōʻihi a me ka laulā ≤ 1.0 mm
ʻŌwili i kahi (Si-maka, CS8520)	Ka lōʻihi holoʻokoʻa ≤ 1 x Anawaena	Ka lōʻihi holoʻokoʻa ≤ 3 x Anawaena
ʻĀpana a (Si-face, CS8520)	≤ 500 mau ʻāpana	ʻAʻohe
Māwae	ʻAʻole ʻae ʻia	ʻAʻole ʻae ʻia
Hoʻohaumia ʻia	ʻAʻole ʻae ʻia	ʻAʻole ʻae ʻia

Nā Hoʻohana Koʻikoʻi o nā Wafers SiC Semi-Insulating

Nā Uila Mana KiʻekiʻeLoaʻa i nā MOSFET e pili ana iā SiC, nā diode Schottky, a me nā modula mana no nā kaʻa uila (EV) ka pōmaikaʻi mai ke kūpaʻa haʻahaʻa o SiC a me nā hiki voltage kiʻekiʻe.
RF & MicrowaveHe kūpono loa ka hana alapine kiʻekiʻe o SiC a me ke kū'ē ʻana i ka radiation no nā mea hoʻonui kikowaena kumu 5G, nā modula radar, a me nā kamaʻilio ukali.
ʻOptoelectronicsHoʻohana nā UV-LED, nā diode polū-laser, a me nā photodetectors i nā substrates SiC laumania atomika no ka ulu like ʻana o ka epitaxial.
Ka ʻIke ʻana i ke Kaiapuni KoʻikoʻiʻO ke kūpaʻa o SiC ma nā mahana kiʻekiʻe (>600 °C) e kūpono ai no nā mea ʻike ma nā wahi ʻino, e like me nā turbine kinoea a me nā mea ʻike nukelea.
Aerospace & Pale KauaHāʻawi ʻo SiC i ka paʻa no nā mea uila mana i nā satelite, nā ʻōnaehana missile, a me nā mea uila mokulele.
Noiʻi KiʻekiʻeNā hoʻonā maʻamau no ka helu quantum, micro-optics, a me nā noi noiʻi kūikawā ʻē aʻe.

Nā nīnau i nīnau pinepine ʻia

No ke aha i hoʻohui ʻia ai ka SiC semi-insulating ma luna o ka SiC conductive?
Hāʻawi ka Semi-insulating SiC i ke kū'ē kiʻekiʻe loa, kahi e hōʻemi ai i nā kahe leakage i nā hāmeʻa voltage kiʻekiʻe a me ke alapine kiʻekiʻe. ʻOi aku ka kūpono o ka Conductive SiC no nā noi kahi e pono ai ka conductivity uila.
Hiki ke hoʻohana ʻia kēia mau wafers no ka ulu ʻana o ka epitaxial?
ʻAe, ua mākaukau kēia mau wafers no ka hana ʻana i nā wafers epi a ua hoʻonohonoho pono ʻia no MOCVD, HVPE, a i ʻole MBE, me nā hana ʻili a me ka kaohi kīnā e hōʻoia i ka maikaʻi o ka papa epitaxial.
Pehea ʻoe e hōʻoia ai i ka maʻemaʻe o ka wafer?
ʻO ke kaʻina hana lumi maʻemaʻe Class-100, ka hoʻomaʻemaʻe ultrasonic multi-step, a me ka pūʻolo i hoʻopaʻa ʻia me ka naikokene e hōʻoiaʻiʻo ana ua kaʻawale nā wafers mai nā mea haumia, nā koena, a me nā micro-scratches.
He aha ka manawa alakaʻi no nā kauoha?
ʻO ka maʻamau, hoʻouna ʻia nā laʻana i loko o 7-10 mau lā ʻoihana, ʻoiai ʻo nā kauoha hana e hāʻawi pinepine ʻia i loko o 4-6 mau pule, ma muli o ka nui o ka wafer kikoʻī a me nā hiʻohiʻona maʻamau.
Hiki iā ʻoe ke hāʻawi i nā ʻano maʻamau?
ʻAe, hiki iā mākou ke hana i nā substrates maʻamau i nā ʻano like ʻole e like me nā puka makani planar, V-grooves, spherical lenses, a me nā mea hou aku.

E pili ana iā mākou

He loea ʻo XKH i ka hoʻomohala ʻenehana kiʻekiʻe, ka hana ʻana, a me ke kūʻai aku ʻana i ke aniani optical kūikawā a me nā mea kristal hou. Lawelawe kā mākou huahana i nā mea uila optical, nā mea uila mea kūʻai aku, a me ka pūʻali koa. Hāʻawi mākou i nā ʻāpana optical Sapphire, nā uhi lens kelepona paʻalima, Ceramics, LT, Silicon Carbide SIC, Quartz, a me nā wafers kristal semiconductor. Me ka ʻike loea a me nā lako hana kiʻekiʻe, ʻoi aku mākou i ka hana ʻana i nā huahana maʻamau ʻole, me ka manaʻo e lilo i alakaʻi i nā mea optoelectronic ʻoihana ʻenehana kiʻekiʻe.