Papa/pā keramika SiC no ka mea paʻa wafer 4'īniha 6'īniha no ICP

Pā/pā keramika SiC no ka mea paʻa wafer 4 iniha 6 iniha no ICP Kiʻi i hōʻike ʻia

Wehewehe Pōkole:

ʻO ka papa keramika SiC kahi ʻāpana hana kiʻekiʻe i hana ʻia mai ka Silicon Carbide maʻemaʻe kiʻekiʻe, i hoʻolālā ʻia no ka hoʻohana ʻana i nā wahi wela, kemika, a me nā ʻano mechanical koʻikoʻi. Kaulana no kona paʻakikī koʻikoʻi, ka conductivity thermal, a me ke kūpaʻa ʻana i ka corrosion, hoʻohana nui ʻia ka papa SiC ma ke ʻano he mea lawe wafer, susceptor, a i ʻole ʻāpana kūkulu i nā ʻoihana semiconductor, LED, photovoltaic, a me aerospace.

E leka uila mai iā mākou

Nā hiʻohiʻona

Papa keramika SiC ʻAkstraktika

Me ke kūpaʻa wela kupaianaha a hiki i ka 1600°C a me ke kūpaʻa maikaʻi loa i nā kinoea reactive a me nā wahi plasma, hōʻoia ka papa SiC i ka hana mau i ka wā o ke kaʻina hana etching wela kiʻekiʻe, deposition, a me ka diffusion. ʻO kona microstructure paʻa a ʻaʻole porous e hoʻemi i ka hanauna ʻāpana, e kūpono ia no nā noi ultra-clean i nā hoʻonohonoho vacuum a i ʻole nā lumi maʻemaʻe.

Noi ʻana o ka papa seramika SiC

1. Hana ʻana i nā mea hana semiconductor

Hoʻohana pinepine ʻia nā papa keramika SiC ma ke ʻano he mea lawe wafer, susceptors, a me nā papa pedestal i nā lako hana semiconductor e like me CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), a me nā ʻōnaehana etching. ʻO kā lākou conductivity thermal maikaʻi loa a me ka hoʻonui thermal haʻahaʻa e ʻae iā lākou e mālama i ka hoʻolaha mahana like, he mea koʻikoʻi ia no ka hana wafer kiʻekiʻe. ʻO ke kū'ē ʻana o SiC i nā kinoea corrosive a me nā plasmas e hōʻoia i ka lōʻihi i nā wahi ʻino, e kōkua ana i ka hōʻemi ʻana i ka haumia o nā ʻāpana a me ka mālama ʻana i nā lako.

2. ʻOihana LED - ICP Etching

Ma ka ʻāpana hana LED, ʻo nā papa SiC nā ʻāpana koʻikoʻi i nā ʻōnaehana etching ICP (Inductively Coupled Plasma). Ma ke ʻano he mau mea paʻa wafer, hāʻawi lākou i kahi kahua paʻa a paʻa i ka thermally e kākoʻo i nā wafers sapphire a i ʻole GaN i ka wā o ka hana plasma. ʻO ko lākou kūpaʻa plasma maikaʻi loa, ka palahalaha o ka ʻili, a me ke kūpaʻa dimensional e kōkua i ka hōʻoia ʻana i ka pololei o ke etching kiʻekiʻe a me ke kūlike, e alakaʻi ana i ka hoʻonui ʻana i ka hua a me ka hana o ka hāmeʻa i nā chips LED.

3. Photovoltaics (PV) a me ka ikehu lā

Hoʻohana pū ʻia nā papa keramika SiC i ka hana ʻana o nā cell solar, ʻoiai i ka wā o ka sintering wela kiʻekiʻe a me nā ʻanuʻu annealing. ʻO ko lākou inertness i nā mahana kiʻekiʻe a me ka hiki ke kūʻē i ka warping e hōʻoia i ka hana mau ʻana o nā wafers silicon. Eia kekahi, ʻo ko lākou pilikia haʻahaʻa haʻahaʻa he mea nui ia no ka mālama ʻana i ka pono o nā cell photovoltaic.

Nā Waiwai o ka Papa Keramika SiC

1. Ikaika a me ka Paʻakikī Mechanical Kūikawā

Hōʻike nā papa keramika SiC i ka ikaika mechanical kiʻekiʻe loa, me ka ikaika flexural maʻamau e ʻoi aku ana ma mua o 400 MPa a me ka paʻakikī Vickers e hiki ana i ka >2000 HV. ʻO kēia ka mea e kūpaʻa loa ai lākou i ka ʻaʻahu mechanical, abrasion, a me ka deformation, e hōʻoiaʻiʻo ana i ke ola lawelawe lōʻihi ma lalo o ke kaumaha kiʻekiʻe a i ʻole ka hoʻopōʻaiapuni thermal hou.

2. Ka Hoʻokele Wera Kiʻekiʻe

Loaʻa i ka SiC ka conductivity thermal maikaʻi loa (maʻamau 120–200 W/m·K), e ʻae ana iā ia e hoʻolaha like i ka wela ma luna o kona ʻili. He mea koʻikoʻi kēia waiwai i nā kaʻina hana e like me ka wafer etching, deposition, a i ʻole sintering, kahi e pili pono ai ka like ʻana o ka mahana i ka hua a me ka maikaʻi o ka huahana.

3. Kūlana Paʻa Loa

Me kahi kiko heheʻe kiʻekiʻe (2700°C) a me ka coefficient haʻahaʻa o ka hoʻonui wela (4.0 × 10⁻⁶/K), mālama nā papa keramika SiC i ka pololei o ka dimensional a me ka pono o ke kūkulu ʻana ma lalo o nā pōʻaiapuni hoʻomehana a me ka hoʻoluʻu wikiwiki. ʻO kēia ka mea e kūpono ai lākou no nā noi ma nā umu wela kiʻekiʻe, nā keʻena vacuum, a me nā wahi plasma.

Nā Waiwai ʻenehana
Papa Kuhikuhi	ʻĀpana	Waiwai
Inoa Mea		ʻO ka Silicon Carbide Sintered Reaction	ʻO ka Silicon Carbide Sintered Pressureless	ʻO ka Silicon Carbide i hoʻopili hou ʻia
Hoʻonohonoho ʻana		RBSiC	SSiC	R-SiC
Ka nui o ka nui	g/cm3	3	3.15 ± 0.03	2.60-2.70
Ikaika Flexural	MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100 (1400°C)
Ikaika Hoʻopaʻa	MPa (kpsi)	1120(158)	3970(560)	> 600
Paʻakikī	Knoop	2700	2800	/
Ke uhaki nei i ke kūpaʻa	MPa m1/2	4.5	4	/
Ka Hoʻokele Wela	W/mk	95	120	23
Ka helu o ka hoʻonui wela	10^-6.1/°C	5	4	4.7
Wela Kūikawā	Joule/g 0k	0.8	0.67	/
Ka mahana kiʻekiʻe loa ma ka lewa	℃	1200	1500	1600
Modulus Elastic	GPA	360	410	240

Nīnau a me nā pane no ka papa keramika SiC

Q: He aha nā waiwai o ka pā silicon carbide?

A： Ua kaulana nā papa Silicon carbide (SiC) no ko lākou ikaika kiʻekiʻe, paʻakikī, a me ke kūpaʻa wela. Hāʻawi lākou i ka conductivity wela maikaʻi loa a me ka hoʻonui wela haʻahaʻa, e hōʻoiaʻiʻo ana i ka hana hilinaʻi ma lalo o nā mahana koʻikoʻi. He inert kemika hoʻi ʻo SiC, kū i nā waikawa, alkalis, a me nā wahi plasma, e kūpono ai no ka semiconductor a me ka hana ʻana o LED. ʻO kona ʻili mānoanoa a laumania e hoʻemi i ka hanauna ʻāpana, e mālama ana i ka hoʻohālikelike o ka lumi maʻemaʻe. Hoʻohana nui ʻia nā papa SiC ma ke ʻano he mea lawe wafer, susceptors, a me nā ʻāpana kākoʻo i nā wahi wela kiʻekiʻe a me nā ʻino ma waena o nā ʻoihana semiconductor, photovoltaic, a me aerospace.