ʻO ka pā keramika SiC no ka mea lawe wafer me ke kūpaʻa wela kiʻekiʻe
Papa Keramika Silicon Carbide (Papa SiC)
He ʻāpana keramika hana kiʻekiʻe e pili ana i ka mea silicon carbide (SiC), i hana ʻia no nā noi ʻoihana holomua e like me ka hana semiconductor a me ka hana LED. ʻO kāna mau hana nui e komo pū ana me ka lawelawe ʻana ma ke ʻano he mea lawe wafer, kahua hana etching, a i ʻole ke kākoʻo hana wela kiʻekiʻe, e hoʻohana ana i ka conductivity thermal kūikawā, ke kūpaʻa wela kiʻekiʻe, a me ke kūpaʻa kemika e hōʻoia i ka like o ke kaʻina hana a me ka hua huahana.
Nā Hiʻohiʻona Koʻikoʻi
1. Hana Wela
- Alakaʻi Hoʻomehana Kiʻekiʻe: 140–300 W/m·K, ʻoi aku ka maikaʻi ma mua o ka graphite kuʻuna (85 W/m·K), e hiki ai ke hoʻopuehu wikiwiki i ka wela a hoʻemi i ke kaumaha wela.
- Ka helu hoʻonui wela haʻahaʻa: 4.0 × 10⁻⁶/℃ (25–1000 ℃), pili pono i ka silicon (2.6 × 10⁻⁶/℃), e hoʻemi ana i nā pilikia deformation wela.
2. Nā Waiwai Mīkini
- Ikaika Kiʻekiʻe: Ikaika Flexural ≥320 MPa (20 ℃), kū i ka hoʻopili ʻana a me ka hopena.
- Paʻakikī Kiʻekiʻe: ʻO ka paʻakikī Mohs 9.5, ʻo ka lua wale nō i ka daimana, e hāʻawi ana i ke kūpaʻa ʻana i ka ʻaʻahu maikaʻi loa.
3. Paʻa Kemika
- Ke Kū'ē i ka ʻAi ʻAna: Kū'ē i nā waikawa ikaika (e laʻa, HF, H₂SO₄), kūpono no nā wahi hana kālai ʻana.
- ʻAʻole-Mākēneka: Ka hiki ke hoʻopilikia ʻia e ka mākēneka kūloko <1×10⁻⁶ emu/g, e pale ana i ka hoʻopilikia ʻia me nā mea hana kikoʻī.
4. Ke ahonui nui i ke kaiapuni
- Paʻa Mahana Kiʻekiʻe: Ka mahana hana lōʻihi a hiki i ka 1600–1900 ℃; ke kūpaʻa pōkole a hiki i ka 2200 ℃ (kahi ʻole oxygen).
- Ke Kū'ē ʻana i ka Haʻalulu Wela: Kū i nā loli wela koke (ΔT >1000℃) me ka ʻole o ka nahā.
Nā noi
| Kahua Noi | Nā Hiʻohiʻona Kūikawā | Ka Waiwai ʻenehana |
| Hana ʻana i ka Semiconductor | Ke kālai ʻana i ka wafer (ICP), ka waiho ʻana o ka ʻili lahilahi (MOCVD), ka poli ʻana o CMP | Hoʻomaopopo ka conductivity thermal kiʻekiʻe i nā kahua mahana like; hōʻemi ka hoʻonui thermal haʻahaʻa i ka warpage wafer. |
| Ka Hana ʻana o ka LED | ʻO ka ulu ʻana o ka epitaxial (e laʻa, GaN), ka ʻoki ʻana i ka wafer, ka hoʻopili ʻana | Hoʻopau i nā hemahema multi-type, e hoʻonui ana i ka pono luminous LED a me ke ola. |
| ʻOihana Photovoltaic | Nā umu sintering wafer Silicon, kākoʻo nā lako PECVD | ʻO ke kūpaʻa kiʻekiʻe i ka mahana a me ka haʻalulu wela e hoʻolōʻihi i ke ola o ka lako. |
| Laser & Optics | Nā substrates hoʻoluʻu laser mana kiʻekiʻe, nā kākoʻo ʻōnaehana optical | ʻO ke alakaʻi wela kiʻekiʻe e hiki ai ke hoʻoheheʻe wikiwiki i ka wela, e hoʻopaʻa ana i nā ʻāpana optical. |
| Nā Mea Hana Loiloi | Nā mea paʻa laʻana TGA/DSC | Hoʻomaikaʻi ka mana wela haʻahaʻa a me ka pane wela wikiwiki i ka pololei o ke ana ʻana. |
Nā Pōmaikaʻi o ka Huahana
- Hana Piha: ʻOi aku ka conductivity thermal, ka ikaika, a me ke kūpaʻa i ka corrosion ma mua o nā alumina a me nā silicon nitride keramika, e hoʻokō ana i nā koi hana koʻikoʻi.
- Hoʻolālā Māmā: Ka nui o 3.1–3.2 g/cm³ (40% o ke kila), e hōʻemi ana i ka ukana inertial a hoʻonui i ka pololei o ka neʻe ʻana.
- Lōʻihi a me ka hilinaʻi: ʻOi aku ke ola lawelawe ma mua o 5 mau makahiki ma 1600 ℃, e hōʻemi ana i ka downtime a me ka hoʻohaʻahaʻa ʻana i nā kumukūʻai hana ma 30%.
- Hoʻopilikino: Kākoʻo i nā geometries paʻakikī (e laʻa, nā kīʻaha omo porous, nā pā multi-layer) me ka hewa flatness <15 μm no nā noi pololei.
Nā Kikoʻī ʻenehana
| Māhele Palena | Hōʻailona |
| Nā Waiwai Kino | |
| Ka nui o ka paʻa | ≥3.10 g/cm³ |
| Ikaika Flexural (20 ℃) | 320–410 MPa |
| Ka Hoʻokele Wela (20 ℃) | 140–300 W/(m·K) |
| Ka helu hoʻonui wela (25–1000 ℃) | 4.0×10⁻⁶/℃ |
| Nā Waiwai Kemika | |
| Ke Kū'ē ʻAkika (HF/H₂SO₄) | ʻAʻohe pala ma hope o ka hoʻokomo ʻana i loko o 24 mau hola |
| Ka pololei o ka mīkini | |
| Palahalaha | ≤15 μm (300 × 300 mm) |
| ʻO ka ʻOʻoleʻa o ka ʻIli (Ra) | ≤0.4 μm |
Nā lawelawe a XKH
Hāʻawi ʻo XKH i nā hoʻonā ʻoihana piha e pili ana i ka hoʻomohala maʻamau, ka mīkini kikoʻī, a me ka kaohi maikaʻi koʻikoʻi. No ka hoʻomohala maʻamau, hāʻawi ia i nā hoʻonā mea maʻemaʻe kiʻekiʻe (>99.999%) a me nā porous (30-50% porosity), i hui pū ʻia me ke kumu hoʻohālike 3D a me ka simulation e hoʻomaikaʻi i nā geometries paʻakikī no nā noi e like me semiconductors a me aerospace. Hahai ka mīkini kikoʻī i kahi kaʻina hana i hoʻomaʻamaʻa ʻia: ka hana ʻana i ka pauka → kaomi isostatic/maloʻo → sintering 2200°C → wili CNC/diamond → nānā ʻana, e hōʻoiaʻiʻo ana i ka polishing nanometer-level a me ka hoʻomanawanui dimensional ±0.01 mm. Hoʻokomo pū ka kaohi maikaʻi i ka hoʻāʻo piha ʻana (XRD composition, SEM microstructure, 3-point bending) a me ke kākoʻo loea (ka hoʻonui ʻana i ke kaʻina hana, kūkākūkā 24/7, hāʻawi laʻana 48-hola), e hāʻawi ana i nā ʻāpana hilinaʻi a hana kiʻekiʻe no nā pono ʻoihana holomua.
Nā Nīnau i Nīnau Pinepine ʻia (FAQ)
1. N: He aha nā ʻoihana e hoʻohana ana i nā pā keramika silicon carbide?
A: Hoʻohana nui ʻia i ka hana semiconductor (lawelawe wafer), ka ikehu lā (nā kaʻina hana PECVD), nā lako lapaʻau (nā ʻāpana MRI), a me ka aerospace (nā ʻāpana wela kiʻekiʻe) ma muli o ko lākou kūpaʻa wela loa a me ke kūpaʻa kemika.
2. N: Pehea e ʻoi aku ai ka maikaʻi o ka silicon carbide ma mua o nā pā quartz/aniani?
A: ʻOi aku ke kūpaʻa o ka haʻalulu wela (a hiki i 1800°C vs. quartz's 1100°C), ʻaʻohe hoʻopilikia magnetic, a ʻoi aku ka lōʻihi o ke ola (5+ mau makahiki vs. quartz's 6-12 mau mahina).
3. N: Hiki i nā pā silicon carbide ke hoʻokele i nā wahi ʻakika?
A: ʻAe. Kūpaʻa i ka HF, H2SO4, a me NaOH me ka <0.01mm corrosion/makahiki, e kūpono ana iā lākou no ke kālai kemika a me ka hoʻomaʻemaʻe wafer.
4. N: He kūpono anei nā pā silicon carbide me ka automation?
A: ʻAe. Hoʻolālā ʻia no ka ʻohi ʻana i ka vacuum a me ka lawelawe ʻana i ka robotic, me ka pālahalaha o ka ʻili <0.01mm e pale ai i ka haumia o nā ʻāpana i loko o nā lole hana automated.
5. N: He aha ka hoʻohālikelike ʻana o ke kumukūʻai me nā mea kuʻuna?
A: ʻOi aku ke kumukūʻai mua (3-5x quartz) akā 30-50% haʻahaʻa TCO ma muli o ke ola lōʻihi, ka hoʻemi ʻana i ka manawa downtime, a me ka mālama ʻana i ka ikehu mai ka conductivity thermal kiʻekiʻe.
