English

SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha

SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2ʻīniha 3ʻīniha 4ʻīniha 6ʻīniha 8ʻīniha i hōʻike ʻia
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha
  • SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C ʻano 2 ʻīniha 3 ʻīniha 4 ʻīniha 6 ʻīniha 8 ʻīniha

Wehewehe Pōkole:

Hāʻawi mākou i kahi koho like ʻole o nā wafer SiC (Silicon Carbide) kiʻekiʻe, me ka nānā kūikawā ʻana i nā wafer ʻano N 4H-N a me 6H-N, he kūpono no nā noi ma nā optoelectronics holomua, nā mea mana, a me nā wahi wela kiʻekiʻe. Ua ʻike ʻia kēia mau wafer ʻano N no ko lākou conductivity thermal kūikawā, ke kūpaʻa uila koʻikoʻi, a me ke kūpaʻa kupaianaha, e hoʻolilo iā lākou i mea kūpono no nā noi hana kiʻekiʻe e like me nā electronics mana, nā ʻōnaehana hoʻokele kaʻa uila, nā inverters ikehu hou, a me nā lako mana ʻoihana. Ma waho aʻe o kā mākou mōhai ʻano N, hāʻawi pū mākou i nā wafer ʻano P 4H/6H-P a me 3C SiC no nā pono kūikawā, me nā mea alapine kiʻekiʻe a me RF, a me nā noi photonic. Loaʻa kā mākou wafers i nā nui mai 2 ʻīniha a 8 ʻīniha, a hāʻawi mākou i nā hoʻonā i hana kūikawā ʻia e hoʻokō i nā koi kikoʻī o nā ʻāpana ʻoihana like ʻole. No nā kikoʻī hou aku a i ʻole nā ​​nīnau, e ʻoluʻolu e hoʻokaʻaʻike mai iā mākou.


Nā hiʻohiʻona

Nā Waiwai

4H-N a me 6H-N (N-ʻano SiC Wafers)

Noi:Hoʻohana nui ʻia i nā mea uila mana, optoelectronics, a me nā noi wela kiʻekiʻe.

Ka laulā o ke anawaena:50.8 mm a i 200 mm.

Mānoanoa:350 μm ± 25 μm, me nā mānoanoa koho o 500 μm ± 25 μm.

Ke kū'ē ʻana:ʻAno-N 4H/6H-P: ≤ 0.1 Ω·cm (papa-Z), ≤ 0.3 Ω·cm (papa-P); ʻAno-N 3C-N: ≤ 0.8 mΩ·cm (papa-Z), ≤ 1 mΩ·cm (papa-P).

ʻOʻoleʻa:ʻO Ra ≤ 0.2 nm (CMP a i ʻole MP).

Ka nui o ka Micropipe (MPD):< 1 kēlā me kēia kenimika².

TTV: ≤ 10 μm no nā anawaena āpau.

ʻŌwiliwili: ≤ 30 μm (≤ 45 μm no nā wafers 8-'īniha).

Hoʻokaʻawale ʻana i ka lihi:3 mm a 6 mm ma muli o ke ʻano o ka wafer.

Pūʻolo:Kaseti wafer multi-wafer a i ʻole ka pahu wafer hoʻokahi.

ʻO ka nui i loaʻa he 3'īniha 4'īniha 6'īniha 8'īniha

HPSI (Nā Wafers SiC Semi-Insulating Maʻemaʻe Kiʻekiʻe)

Noi:Hoʻohana ʻia no nā hāmeʻa e pono ai ke kūpaʻa kiʻekiʻe a me ka hana paʻa, e like me nā hāmeʻa RF, nā noi photonic, a me nā mea ʻike.

Ka laulā o ke anawaena:50.8 mm a i 200 mm.

Mānoanoa:ʻO ka mānoanoa maʻamau o 350 μm ± 25 μm me nā koho no nā wafers mānoanoa a hiki i 500 μm.

ʻOʻoleʻa:Ra ≤ 0.2 nm.

Ka nui o ka Micropipe (MPD): ≤ 1 ea/cm².

Ke kū'ē ʻana:ʻO ke kūpaʻa kiʻekiʻe, hoʻohana pinepine ʻia i nā noi semi-insulating.

ʻŌwiliwili: ≤ 30 μm (no nā nui liʻiliʻi), ≤ 45 μm no nā anawaena nui aʻe.

TTV: ≤ 10 μm.

ʻO ka nui i loaʻa he 3'īniha 4'īniha 6'īniha 8'īniha

4H-P、6H-P&3C Wafer SiC(Nā Wafers SiC ʻano-P)

Noi:ʻO ke kumu nui no ka mana a me nā hāmeʻa alapine kiʻekiʻe.

Ka laulā o ke anawaena:50.8 mm a i 200 mm.

Mānoanoa:350 μm ± 25 μm a i ʻole nā ​​​​koho i hoʻopilikino ʻia.

Ke kū'ē ʻana:ʻAno-P 4H/6H-P: ≤ 0.1 Ω·cm (papa-Z), ≤ 0.3 Ω·cm (papa-P).

ʻOʻoleʻa:ʻO Ra ≤ 0.2 nm (CMP a i ʻole MP).

Ka nui o ka Micropipe (MPD):< 1 kēlā me kēia kenimika².

TTV: ≤ 10 μm.

Hoʻokaʻawale ʻana i ka lihi:3 mm a i 6 mm.

ʻŌwiliwili: ≤ 30 μm no nā nui liʻiliʻi, ≤ 45 μm no nā nui nui.

ʻO ka nui i loaʻa he 3'īniha 4'īniha 6'īniha5×5 10×10

Papa ʻIkepili ʻĀpana

Waiwai

2 ʻīniha

3'īniha

4 ʻīniha

6 ʻīniha

8 ʻīniha

ʻAno

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI/4H-SEMI

Anawaena

50.8 ± 0.3 mm

76.2±0.3mm

100 ± 0.3mm

150±0.3mm

200 ± 0.3 mm

Mānoanoa

330 ± 25 um

350 ±25 um

350 ±25 um

350 ±25 um

350 ±25 um

350±25um;

500±25um

500±25um

500±25um

500±25um

a i hoʻopilikino ʻia paha

a i hoʻopilikino ʻia paha

a i hoʻopilikino ʻia paha

a i hoʻopilikino ʻia paha

a i hoʻopilikino ʻia paha

ʻOʻoleʻa

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

ʻŌwiliwili

≤ 30um

≤ 30um

≤ 30um

≤ 30um

≤45um

TTV

≤ 10um

≤ 10um

≤ 10um

≤ 10um

≤ 10um

Kāhili/ʻEli

CMP/MP

MPD

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

ʻAno

Poepoe, Pālahalaha 16mm; ʻO ka lōʻihi he 22mm; ʻO ka lōʻihi he 30/32.5mm; ʻO ka lōʻihi he 47.5mm; ʻUku; ʻUku;

Bevel

45°, SEMI Spec; ʻAno C

 Papa

Papa hana no MOS&SBD; Papa noiʻi; Papa Dummy, Papa wafer hua

Nā Manaʻo

Ke anawaena, ka mānoanoa, ke kuhikuhi ʻana, hiki ke hoʻopilikino ʻia nā kikoʻī ma luna ma kāu noi

 

Nā noi

·Nā Uila Mana

He mea koʻikoʻi nā wafers SiC ʻano N i nā mea uila mana ma muli o ko lākou hiki ke lawelawe i ke voltage kiʻekiʻe a me ke au kiʻekiʻe. Hoʻohana pinepine ʻia lākou i nā mea hoʻololi mana, nā inverters, a me nā hoʻokele motika no nā ʻoihana e like me ka ikehu hou, nā kaʻa uila, a me ka automation ʻoihana.

· ʻOptoelectronics
Hoʻohana ʻia nā mea SiC ʻano N, ʻoi aku hoʻi no nā noi optoelectronic, i nā mea hana e like me nā diode emitting light (LED) a me nā diode laser. ʻO ko lākou conductivity thermal kiʻekiʻe a me ka bandgap ākea e kūpono ai lākou no nā mea hana optoelectronic hana kiʻekiʻe.

·Nā Hana Mahana Kiʻekiʻe
He kūpono loa nā wafers 4H-N 6H-N SiC no nā wahi wela kiʻekiʻe, e like me nā mea ʻike a me nā mea mana i hoʻohana ʻia i nā noi aerospace, automotive, a me nā ʻoihana kahi e koʻikoʻi ai ka hoʻopuehu ʻana o ka wela a me ke kūpaʻa i nā mahana kiʻekiʻe.

·Nā Mea Hana RF
Hoʻohana ʻia nā wafers 4H-N 6H-N SiC i nā mea hana alapine lekiō (RF) e hana ana ma nā pae alapine kiʻekiʻe. Hoʻohana ʻia lākou i nā ʻōnaehana kamaʻilio, ʻenehana radar, a me nā kamaʻilio ukali, kahi e pono ai ka pono o ka mana kiʻekiʻe a me ka hana.

·Nā noi Photonic
I loko o nā photonics, hoʻohana ʻia nā wafers SiC no nā mea hana e like me nā photodetectors a me nā modulators. ʻO nā waiwai kūikawā o ka mea e ʻae iā ia e lilo i mea kūpono i ka hana ʻana o ka mālamalama, modulation, a me ka ʻike ʻana i nā ʻōnaehana kamaʻilio optical a me nā mea hana kiʻi.

·Nā mea ʻike
Hoʻohana ʻia nā wafers SiC i nā ʻano hana sensor like ʻole, ʻoi aku hoʻi i nā wahi ʻino kahi e hāʻule ai nā mea ʻē aʻe. ʻO kēia mau mea e komo pū me ka mahana, ke kaomi, a me nā sensor kemika, he mea nui ia i nā kahua e like me ke kaʻa, ka ʻaila a me ke kinoea, a me ka nānā ʻana i ke kaiapuni.

·Nā ʻōnaehana hoʻokele kaʻa uila
He kuleana koʻikoʻi ko ka ʻenehana SiC i nā kaʻa uila ma o ka hoʻomaikaʻi ʻana i ka pono a me ka hana o nā ʻōnaehana hoʻokele. Me nā semiconductors mana SiC, hiki i nā kaʻa uila ke hoʻokō i ke ola pākaukau ʻoi aku ka maikaʻi, nā manawa hoʻouka wikiwiki, a me ka pono ikehu ʻoi aku ka nui.

·Nā Sensors Holomua a me nā mea hoʻololi Photonic
I nā ʻenehana sensor holomua, hoʻohana ʻia nā wafers SiC no ka hana ʻana i nā sensor kiʻekiʻe no nā noi ma robotics, nā mea lapaʻau, a me ka nānā ʻana i ke kaiapuni. I nā mea hoʻololi photonic, hoʻohana ʻia nā waiwai o SiC e hiki ai ke hoʻololi pono i ka ikehu uila i nā hōʻailona optical, he mea nui ia i nā kamaʻilio a me nā ʻoihana pūnaewele wikiwiki.

Nīnau a me nā Pane

Q：He aha ka 4H i loko o ka 4H SiC?
AʻO "4H" ma 4H SiC e pili ana i ke ʻano kristal o ka silicon carbide, ʻo ia hoʻi kahi ʻano hexagonal me ʻehā papa (H). Hōʻike ka "H" i ke ʻano o ka polytype hexagonal, e hoʻokaʻawale ana iā ia mai nā polytype SiC ʻē aʻe e like me 6H a i ʻole 3C.

Q：He aha ka conductivity thermal o 4H-SiC?
AʻO ke alakaʻi wela o 4H-SiC (Silicon Carbide) ma kahi o 490-500 W/m·K ma ka mahana o ka lumi. ʻO kēia alakaʻi wela kiʻekiʻe e kūpono ia no nā noi ma nā mea uila mana a me nā wahi wela kiʻekiʻe, kahi e koʻikoʻi ai ka hoʻolaha wela maikaʻi.

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