ʻO ke substrate SiC Dia200mm 4H-N a me HPSI Silicon carbide

ʻO 4H-N lāua ʻo HPSI kahi polytype o ka silicon carbide (SiC), me kahi ʻano lattice kristal i haku ʻia me nā ʻāpana hexagonal i hana ʻia me ʻehā kalapona a me ʻehā mau ʻātoma silicon. Hāʻawi kēia ʻano i ka mea me ka neʻe ʻana o ka electron a me nā ʻano voltage breakdown maikaʻi loa. Ma waena o nā polytypes SiC āpau, hoʻohana nui ʻia ʻo 4H-N lāua ʻo HPSI ma ke kahua o nā electronics mana ma muli o kona neʻe ʻana o ka electron a me ka lua kaulike a me ka conductivity thermal kiʻekiʻe.

ʻO ka puka ʻana mai o nā substrates SiC 8 iniha he holomua koʻikoʻi no ka ʻoihana semiconductor mana. ʻIke nā mea semiconductor silicon kuʻuna i ka emi nui o ka hana ma lalo o nā kūlana koʻikoʻi e like me ke kiʻekiʻe o nā mahana a me nā voltages kiʻekiʻe, ʻoiai hiki i nā substrates SiC ke mālama i kā lākou hana maikaʻi loa. Ke hoʻohālikelike ʻia me nā substrates liʻiliʻi, hāʻawi nā substrates SiC 8 iniha i kahi wahi hana hoʻokahi ʻāpana nui aʻe, kahi e unuhi ʻia ai ka pono hana kiʻekiʻe a me nā kumukūʻai haʻahaʻa, he mea nui no ka hoʻokele ʻana i ke kaʻina hana kālepa o ka ʻenehana SiC.

ʻO ka ʻenehana ulu no nā substrates silicon carbide (SiC) 8 iniha e koi ana i ka pololei a me ka maʻemaʻe kiʻekiʻe loa. Hoʻopilikia pololei ka maikaʻi o ka substrate i ka hana o nā mea hana ma hope, no laila pono nā mea hana e hoʻohana i nā ʻenehana holomua e hōʻoia i ka hemolele crystalline a me ka haʻahaʻa o ka hemahema o nā substrates. Hoʻopili pinepine kēia i nā kaʻina hana hoʻokaʻawale vapor chemical (CVD) paʻakikī a me nā ʻenehana ulu kristal pololei a me ka ʻoki ʻana. Hoʻohana nui ʻia nā substrates 4H-N a me HPSI SiC ma ke kahua o nā mea uila mana, e like me nā mea hoʻololi mana kiʻekiʻe, nā inverters traction no nā kaʻa uila, a me nā ʻōnaehana ikehu hou.

Hiki iā mākou ke hāʻawi i ka substrate 4H-N 8inch SiC, nā ʻano like ʻole o nā wafers waihona substrate. Hiki iā mākou ke hoʻonohonoho i ka hoʻopilikino ʻana e like me kāu mau pono. Welina mai i ka nīnau!