ʻAno SiCOI wafer 4 ʻīniha 6 ʻīniha HPSI SiC SiO2 Si subatrate

Wehewehe Pōkole:

Hōʻike kēia pepa i kahi ʻike kikoʻī o nā wafers Silicon Carbide-on-Insulator (SiCOI), e kālele pono ana i nā substrates 4-'īniha a me 6-'īniha e hōʻike ana i nā papa silicon carbide (SiC) semi-insulating (HPSI) kiʻekiʻe-maʻemaʻe i hoʻopaʻa ʻia ma luna o nā papa insulating silicon dioxide (SiO₂) ma luna o nā substrates silicon (Si). Hoʻohui ka ʻano SiCOI i nā waiwai uila, thermal, a me mechanical kūikawā o SiC me nā pono hoʻokaʻawale uila o ka papa oxide a me ke kākoʻo mechanical o ka substrate silicon. Hoʻonui ka hoʻohana ʻana i ka HPSI SiC i ka hana o ka hāmeʻa ma ka hoʻemi ʻana i ka hoʻokele substrate a me ka hoʻemi ʻana i nā pohō parasitic, e hana ana i kēia mau wafers kūpono no nā noi semiconductor mana kiʻekiʻe, alapine kiʻekiʻe, a me ke ana wela kiʻekiʻe. Kūkākūkā ʻia ke kaʻina hana hana, nā ʻano mea, a me nā pono kūkulu o kēia hoʻonohonoho multilayer, e hoʻoikaika ana i kona pili i nā uila mana hanauna hou a me nā ʻōnaehana microelectromechanical (MEMS). Hoʻohālikelike pū ka haʻawina i nā waiwai a me nā noi hiki o nā wafers SiCOI 4-'īniha a me 6-'īniha, e hōʻike ana i ka scalability a me nā manaʻolana hoʻohui no nā hāmeʻa semiconductor holomua.

E leka uila mai iā mākou

Nā hiʻohiʻona

ʻO ke ʻano o ka wafer SiCOI

HPB (High-Performance Bonding) BIC (Bonded Integrated Circuit) a me SOD (ʻenehana Silicon-on-Diamond a i ʻole Silicon-on-Insulator-like). Hoʻokomo pū ʻia me:

Nā Ana Hana:

Papa inoa i nā palena e like me ka pololei, nā ʻano hewa (e laʻa, "ʻAʻohe hewa," "Ka mamao waiwai"), a me nā ana mānoanoa (e laʻa, "Mānoanoa Direct-Layer/kg").

He papa me nā waiwai helu (hiki paha i nā hoʻokolohua a i ʻole nā palapala hana) ma lalo o nā poʻomanaʻo e like me "ADDR/SYGBDT," "10/0," a pēlā aku.

ʻIkepili Mānoanoa o ka Papa:

Nā komo hou ʻana i kapa ʻia ʻo "L1 Thickness (A)" a i "L270 Thickness (A)" (hiki paha ma Ångströms, 1 Å = 0.1 nm).

Manaʻo ʻia kahi ʻano multi-papa me ka kaohi mānoanoa pololei no kēlā me kēia papa, maʻamau i nā wafers semiconductor holomua.

ʻAno Wafer SiCOI

ʻO SiCOI (Silicon Carbide on Insulator) kahi ʻano wafer kūikawā e hoʻohui ana i ka silicon carbide (SiC) me kahi papa insulating, e like me SOI (Silicon-on-Insulator) akā ua hoʻonohonoho pono ʻia no nā noi mana kiʻekiʻe/wela kiʻekiʻe. Nā hiʻohiʻona koʻikoʻi:

Ka Hoʻonohonoho Papa:

Papa Luna: Silicon Carbide kristal hoʻokahi (SiC) no ka neʻe ʻana o ka electron kiʻekiʻe a me ke kūpaʻa wela.

Mea Hoʻopaʻa Ili: ʻO SiO₂ (oxide) a i ʻole daimana (i loko o SOD) ma ke ʻano maʻamau e hōʻemi i ka capacitance parasitic a hoʻomaikaʻi i ka hoʻokaʻawale ʻana.

Papahana Kumu: Silicon a i ʻole polycrystalline SiC no ke kākoʻo mechanical

Nā waiwai o ka wafer SiCOI

Nā Waiwai Uila ʻO ka Bandgap ākea (3.2 eV no 4H-SiC): Hoʻāla i ke volta haki kiʻekiʻe (>10 × ʻoi aku ke kiʻekiʻe ma mua o ka silicon). Hoʻemi i nā kahe leakage, e hoʻomaikaʻi ana i ka pono o nā hāmeʻa mana.

Ka Neʻe ʻana o ka Electron Kiʻekiʻe:~900 cm²/V·s (4H-SiC) vs. ~1,400 cm²/V·s (Si), akā ʻoi aku ka maikaʻi o ka hana kiʻekiʻe.

Ke kū'ē haʻahaʻa:Hōʻike nā transistors i hoʻokumu ʻia ma SiCOI (e laʻa, MOSFET) i nā pohō conduction haʻahaʻa.

Ka pale ʻana maikaʻi loa:ʻO ka oxide i kanu ʻia (SiO₂) a i ʻole ka papa daimana e hōʻemi i ka capacitance parasitic a me ka crosstalk.

Nā Waiwai WelaKa Hoʻokele Wela Kiʻekiʻe: SiC (~490 W/m·K no 4H-SiC) vs. Si (~150 W/m·K). Hiki i ka daimana (inā hoʻohana ʻia ma ke ʻano he insulator) ke ʻoi aku ma mua o 2,000 W/m·K, e hoʻonui ana i ka hoʻolaha wela.

Paʻa Wela:Hana pono ma >300°C (vs. ~150°C no ka silicon). Hoʻemi i nā koi hoʻomaʻalili i nā mea uila mana.

3. Nā Waiwai Mekanika a me KemikaPaʻakikī Loa (~9.5 Mohs): Kūʻē i ka ʻaʻahu, e paʻa ai ka SiCOI no nā ʻano ʻino.

Ka Inertness Kemika:Kūʻē i ka oxidation a me ka corrosion, ʻoiai i nā kūlana acidic/alkaline.

Hoʻonui Haʻahaʻa:Hoʻohālikelike maikaʻi me nā mea wela kiʻekiʻe ʻē aʻe (e laʻa, GaN).

4. Nā Pōmaikaʻi Kūkulu (vs. Bulk SiC a i ʻole SOI)

Hoʻemi ʻia nā pohō Substrate:Pale ka papa hoʻokaʻawale i ke kahe ʻana o ke au i loko o ka substrate.

Hana RF i hoʻomaikaʻi ʻia:ʻO ka capacitance parasitic haʻahaʻa e hiki ai ke hoʻololi wikiwiki (pono no nā polokalamu 5G/mmWave).

Hoʻolālā Hiki ke Hoʻololi:ʻO ka papa luna SiC lahilahi e ʻae i ka hoʻonui ʻana i ka hāmeʻa (e laʻa, nā kahawai lahilahi loa i nā transistors).

Hoʻohālikelike me SOI & Bulk SiC

Waiwai	ʻO SiCOI	SOI (Si/SiO₂/Si)	SiC nui
Pākuʻi	3.2 eV (SiC)	1.1 eV (Si)	3.2 eV (SiC)
Ka Hoʻokele Wela	Kiʻekiʻe (SiC + daimana)	Haʻahaʻa (pale ka SiO₂ i ke kahe wela)	Kiʻekiʻe (SiC wale nō)
Uila Haʻihaʻi	Kiʻekiʻe Loa	Waena	Kiʻekiʻe Loa
Kumukūʻai	Kiʻekiʻe aʻe	Haʻahaʻa	Kiʻekiʻe loa (SiC maʻemaʻe)

Nā noi o ka wafer SiCOI

Nā Uila Mana
Hoʻohana nui ʻia nā wafers SiCOI i nā mea semiconductor voltage kiʻekiʻe a me ka mana kiʻekiʻe e like me MOSFET, Schottky diodes, a me nā kuapo mana. ʻO ka bandgap ākea a me ke voltage breakdown kiʻekiʻe o SiC e hiki ai ke hoʻololi mana pono me ka hoʻemi ʻana i nā pohō a me ka hoʻonui ʻana i ka hana thermal.

Nā Mea Hana Alapine Lekiō (RF)
Hoʻemi ka papa insulating i loko o nā wafers SiCOI i ka capacitance parasitic, e kūpono ai iā lākou no nā transistors alapine kiʻekiʻe a me nā amplifiers i hoʻohana ʻia i nā telecommunications, radar, a me nā ʻenehana 5G.

Nā ʻōnaehana Microelectromechanical (MEMS)
Hāʻawi nā wafers SiCOI i kahi kahua paʻa no ka hana ʻana i nā mea ʻike MEMS a me nā actuators e hana pono ana i nā wahi ʻino ma muli o ka inertness kemika a SiC a me ka ikaika mechanical.

Nā Uila Wela Kiʻekiʻe
Hoʻohana ʻo SiCOI i nā mea uila e mālama i ka hana a me ka hilinaʻi i nā mahana kiʻekiʻe, e pōmaikaʻi ana i nā noi kaʻa, aerospace, a me nā ʻoihana kahi e hāʻule ai nā mea silicon maʻamau.

Nā Mea Hana Photonic a me Optoelectronic
ʻO ka hui pū ʻana o nā waiwai optical o SiC a me ka papa insulating e hoʻomaʻamaʻa i ka hoʻohui ʻana o nā kaapuni photonic me ka hoʻokele thermal i hoʻonui ʻia.

Nā mea uila paʻakikī i hoʻopili ʻia e ka radiation
Ma muli o ke ahonui kūlohelohe o SiC i ka radiation, kūpono nā wafers SiCOI no nā noi lewa a me nā noi nukelea e pono ai nā mea hana e kū i nā wahi radiation kiʻekiʻe.

Nā nīnau a me nā pane a ka wafer SiCOI

Q1: He aha ka wafer SiCOI?

A: ʻO SiCOI ke kū nei no Silicon Carbide-on-Insulator. He ʻano wafer semiconductor kahi i hoʻopaʻa ʻia ai kahi papa lahilahi o ka silicon carbide (SiC) ma luna o kahi papa insulating (ʻo ia hoʻi ka silicon dioxide, SiO₂), i kākoʻo ʻia e kahi substrate silicon. Hoʻohui kēia ʻano i nā waiwai maikaʻi loa o SiC me ka hoʻokaʻawale uila mai ka insulator.

Q2: He aha nā pono nui o nā wafers SiCOI?

A: ʻO nā pono nui e komo pū ana me ke kiʻekiʻe o ka voltage breakdown, ka bandgap ākea, ka conductivity thermal maikaʻi loa, ka paʻakikī mechanical kiʻekiʻe, a me ka hoʻemi ʻia ʻana o ka capacitance parasitic mahalo i ka papa insulating. ʻO kēia ke alakaʻi i ka hoʻomaikaʻi ʻana i ka hana o ka hāmeʻa, ka pono, a me ka hilinaʻi.

Q3: He aha nā hoʻohana maʻamau o nā wafers SiCOI?

A: Hoʻohana ʻia lākou i nā mea uila mana, nā mea RF alapine kiʻekiʻe, nā mea ʻike MEMS, nā mea uila wela kiʻekiʻe, nā mea photonic, a me nā mea uila i hoʻopaʻa ʻia i ka radiation.