ʻO Silicon Carbide Ceramic Chuck no ka SiC sapphire Si GAAs Wafer

ʻO ke Chuck Ceramic Silicon Carbide no ka SiC sapphire Si GAAs Wafer Kiʻi i hōʻike ʻia

Wehewehe Pōkole:

ʻO ka Silicon Carbide Ceramic Chuck kahi kahua hana kiʻekiʻe i hana ʻia no ka nānā ʻana i ka semiconductor, ka hana ʻana o ka wafer, a me nā noi hoʻopili. Kūkulu ʻia me nā mea keramika holomua—me ka sintered SiC (SSiC), ka reaction-bonded SiC (RSiC), silicon nitride, a me ka alumini nitride—hāʻawi ia i ke kūpaʻa kiʻekiʻe, ka hoʻonui wela haʻahaʻa, ke kūpaʻa ʻana i ka ʻaʻahu maikaʻi loa, a me ke ola lawelawe lōʻihi.

E leka uila mai iā mākou

Nā hiʻohiʻona

Kiʻikuhi kikoʻī

ʻIkepili o ka Silicon Carbide (SiC) Ceramic Chuck

ʻO kaʻO ka Chuck Seramika Silicon Carbidehe kahua hana kiʻekiʻe i hana ʻia no ka nānā ʻana i ka semiconductor, ka hana ʻana o ka wafer, a me nā noi hoʻopili. Kūkulu ʻia me nā mea keramika holomua—me kaSiC sintered (SSiC), SiC i hoʻopaʻa ʻia me ka hopena (RSiC), silicon nitride, a mealumini nitride—hāʻawi iaʻoʻoleʻa kiʻekiʻe, hoʻonui wela haʻahaʻa, kūpaʻa ʻaʻahu maikaʻi loa, a me ke ola lawelawe lōʻihi.

Me ka ʻenekinia pololei a me ka polishing kiʻekiʻe loa, hāʻawi ka chuckka pālahalaha sub-micron, nā ʻili aniani maikaʻi, a me ke kūpaʻa dimensional lōʻihi, e lilo ana ia i mea hoʻonā kūpono no nā kaʻina hana semiconductor koʻikoʻi.

Nā Pōmaikaʻi Koʻikoʻi

Kiʻekiʻe pololei
ʻO ka palahalaha i kāohi ʻia i loko0.3–0.5 μm, e hōʻoiaʻiʻo ana i ke kūpaʻa o ka wafer a me ka pololei o ke kaʻina hana.
Hoʻopili ʻana i ke aniani
HoʻokōRa 0.02 μmka ʻoʻoleʻa o ka ʻili, e hōʻemi ana i nā ʻōpala wafer a me ka haumia—kūpono no nā wahi maʻemaʻe loa.
Māmā Loa
ʻOi aku ka ikaika akā māmā ma mua o ka quartz a i ʻole nā mea hao, e hoʻomaikaʻi ana i ka kaohi neʻe, ka pane ʻana, a me ka pololei o ke kūlana.
ʻOʻoleʻa kiʻekiʻe
Hoʻomaopopo ka modulus o Exceptional Young i ke kūpaʻa o ka dimensional ma lalo o nā ukana kaumaha a me ka hana wikiwiki.
Hoʻonui Haʻahaʻa
Hoʻohālikelike pono ʻo CTE i nā wafers silicon, e hōʻemi ana i ke kaumaha wela a hoʻonui i ka hilinaʻi o ke kaʻina hana.
Ke kūpaʻa ʻana i ka lole maikaʻi loa
Mālama ka paʻakikī loa i ka palahalaha a me ka pololei ʻoiai ma lalo o ka hoʻohana pinepine ʻia no ka manawa lōʻihi.

Kaʻina Hana Hana

Hoʻomākaukau ʻana i nā mea maka
ʻO nā pauka SiC maʻemaʻe kiʻekiʻe me ka nui o nā ʻāpana i kāohi ʻia a me nā haumia haʻahaʻa loa.
Hoʻokumu a me ka Sintering
Nā ʻano hana e like meka sintering kaomi ʻole (SSiC) or ka hoʻopili ʻana o ka hopena (RSiC)hana i nā substrates keramika mānoanoa a like.
Mīkini Kūpono
ʻO ka wili CNC, ka ʻoki laser, a me ka mīkini ultra-precision e hoʻokō i ka hoʻomanawanui ±0.01 mm a me ka parallelism ≤3 μm.
Ka mālama ʻana i ka ʻili
ʻO ka wili ʻana a me ka poli ʻana i nā pae he nui a hiki i Ra 0.02 μm; loaʻa nā uhi koho no ke kūpaʻa ʻana i ka pala a i ʻole nā waiwai friction i hana ʻia.
Nānā a me ka Mana Kūlana
Hōʻoia nā interferometers a me nā mea hoʻāʻo roughness i ka mālama ʻana i nā kikoʻī semiconductor-grade.

Nā Kikoʻī ʻenehana

Palena	Waiwai	ʻĀpana
Palahalaha	≤0.5	μm
Nā nui o ka wafer	6'', 8'', 12'' (loaʻa ke ʻano maʻamau)	—
ʻAno ʻili	ʻAno pine / ʻAno apo	—
Ke kiʻekiʻe o ke pine	0.05–0.2	mm
Ke anawaena pine liʻiliʻi loa	ϕ0.2	mm
Ka mamao iki o nā pine	3	mm
Ka laulā o ke apo sila liʻiliʻi loa	0.7	mm
ʻO ka ʻōʻili	Ra 0.02	μm
Ka hoʻomanawanui mānoanoa	±0.01	mm
Ke ahonui o ke anawaena	±0.01	mm
Ka hoʻomanawanui like ʻole	≤3	μm

Nā Noi Nui

Nā lako nānā wafer semiconductor
Nā ʻōnaehana hana a me ka hoʻoili ʻana o ka wafer
Nā mea hana hoʻopaʻa a me ka hoʻopili ʻana o ka wafer
Ka hana ʻana o nā hāmeʻa optoelectronic holomua
Nā mea hana kikoʻī e pono ai nā ʻili pālahalaha loa a maʻemaʻe loa

Nīnau a me nā Pane – ʻUmiʻumi Keramika Silicon Carbide

Q1: Pehea e hoʻohālikelike ai nā ʻūpā keramika SiC me nā ʻūpā quartz a i ʻole nā ʻūpā metala?
A1: ʻOi aku ka māmā o nā chucks SiC, ʻoi aku ka paʻakikī, a he CTE kokoke i nā wafers silicon, e hōʻemi ana i ka deformation thermal. Hāʻawi pū lākou i ke kūpaʻa ʻaʻahu kiʻekiʻe a me ke ola lōʻihi.

Q2: He aha ka palahalaha e hiki ke hoʻokō ʻia?
A2: Hoʻomalu ʻia i loko0.3–0.5 μm, e hoʻokō ana i nā koi koʻikoʻi o ka hana semiconductor.

Q3: E ʻōpala anei ka ʻili i nā wafers?
A3: ʻAʻole—i hoʻopili ʻia ke aniani iRa 0.02 μm, e hōʻoiaʻiʻo ana i ka lawelawe ʻana me ke kahakaha ʻole a me ka hoʻemi ʻana i ka hana ʻāpana.

Q4: He aha nā nui wafer i kākoʻo ʻia?
A4: Nā nui maʻamau o6'', 8'', a me 12'', me ka hoʻopilikino ʻana i loaʻa.

Q5: Pehea ke kūpaʻa wela?
A5: Hāʻawi nā keramika SiC i ka hana wela kiʻekiʻe maikaʻi loa me ka liʻiliʻi o ka deformation ma lalo o ke kaʻapuni thermal.

E pili ana iā mākou

He loea ʻo XKH i ka hoʻomohala ʻenehana kiʻekiʻe, ka hana ʻana, a me ke kūʻai aku ʻana i ke aniani optical kūikawā a me nā mea kristal hou. Lawelawe kā mākou huahana i nā mea uila optical, nā mea uila mea kūʻai aku, a me ka pūʻali koa. Hāʻawi mākou i nā ʻāpana optical Sapphire, nā uhi lens kelepona paʻalima, Ceramics, LT, Silicon Carbide SIC, Quartz, a me nā wafers kristal semiconductor. Me ka ʻike loea a me nā lako hana kiʻekiʻe, ʻoi aku mākou i ka hana ʻana i nā huahana maʻamau ʻole, me ka manaʻo e lilo i alakaʻi i nā mea optoelectronic ʻoihana ʻenehana kiʻekiʻe.