ʻO SiC Ceramic Tray End Effector Wafer e lawelawe ana i nā ʻāpana hana maʻamau
ʻO ka SiC Ceramic & Alumina Ceramic Custom Components Pōkole
ʻO Silicon Carbide (SiC) Nā Mea Kūʻai Kūʻai Ceramic
ʻO Silicon Carbide (SiC) nā mea hana seramika hana kiʻekiʻe i kaulana no ko lākouʻo ka paʻakikī kiʻekiʻe loa, ka paʻa wela maikaʻi loa, ka pale ʻana i ka corrosion, a me ka conductivity thermal kiʻekiʻe. Hiki i nā mea hana maʻamau ʻo Silicon Carbide (SiC) ke mālama i ka paʻa o ke kūkulu ʻananā kaiapuni wela kiʻekiʻe i ka wā e pale ana i ka ʻinoʻino mai nā ʻakika ikaika, alkalis, a me nā metala hehee. Hana ʻia nā seramika SiC ma o nā kaʻina hana e like mehoʻopaʻa paʻa ʻole, hoʻoheheʻe ʻana, a i ʻole ka hoʻopaʻa ʻana i ka wela-pressa hiki ke hoʻopilikino ʻia i loko o nā ʻano paʻakikī, e like me nā apo mechanical seal, shaft lima lima, nozzles, furnace tubes, wafer waʻa, a me nā papa lining-pale.
ʻO nā mea hana maʻamau Alumina Ceramic
Alumina (Al₂O₃).ka insulation kiʻekiʻe, ka ikaika mechanical maikaʻi, a me ke kū'ē kū'ē. Hoʻokaʻawale ʻia e nā māka maʻemaʻe (e laʻa, 95%, 99%), Alumina (Al₂O₃) nā mea hana seramika me ka mīkini pololei e hiki ai iā lākou ke hana ʻia i loko o nā insulators, bearings, ʻokiʻoki, a me nā implants olakino. Hana ʻia nā seramika alumina ma okaomi maloʻo, hoʻoheheʻe ʻia, a i ʻole nā hana kaomi isostatic, me nā ili hiki ke hoʻonani ʻia a hiki i ke aniani hoʻopau.
ʻO XKH kūikawā i ka R&D a me ka hana maʻamau osilika carbide (SiC) a me alumina (Al₂O₃) seramika. Ke nānā aku nei nā huahana ceramic SiC i nā kaiapuni kiʻekiʻe, ʻaʻahu kiʻekiʻe, a me ka corrosive, e uhi ana i nā noi semiconductor (e like me nā waʻa wafer, nā hoe cantilever, nā paipu umu) a me nā ʻāpana kahua wela a me nā sila kiʻekiʻe no nā māhele ikehu hou. Hoʻokumu nā huahana keramika alumina i ka insulation, sealing, a me nā waiwai biomedical, me nā substrates uila, nā apo mechanical seal, a me nā implants. Ke hoʻohana nei i nā ʻenehana e like meʻO ke kaomi isostatic, ka sintering ʻole, a me ka mīkini pololei, hāʻawi mākou i nā hoʻoponopono hoʻoponopono kiʻekiʻe no nā ʻoihana e pili ana i nā semiconductors, photovoltaics, aerospace, medical, and chemical processing, e hōʻoia ana i nā ʻāpana e hoʻokō i nā koi koʻikoʻi no ka pololei, ka lōʻihi, a me ka hilinaʻi i nā kūlana koʻikoʻi.
ʻO SiC Ceramic Functional Chucks & CMP Grinding Discs introduction
ʻO SiC nā ʻūhā ʻūhā ʻeleʻele
ʻO Silicon Carbide (SiC) Ceramic Vacuum Chucks nā mea hana adsorption kiʻekiʻe i hana ʻia mai nā mea hana kiʻekiʻe silicon carbide (SiC). Hoʻolālā ʻia lākou no nā noi e koi ana i ka maʻemaʻe a me ka paʻa, e like me ka semiconductor, photovoltaic, a me nā ʻoihana hana kikoʻī. ʻO kā lākou mau pōmaikaʻi nui, ʻo ia ka: kahi ʻili i hoʻoliʻi ʻia i ka aniani (ka palahalaha i loko o 0.3-0.5 μm), ʻoʻoleʻa kiʻekiʻe a me ka helu haʻahaʻa o ka hoʻonui wela (e hōʻoia ana i ke ʻano nano-level a me ke kūpaʻa kūlana), kahi ʻano māmā loa (e hoʻemi nui i ka neʻe inertia. ʻoi aku ka lōʻihi o ke ola o nā pahu metala) . Hiki i kēia mau waiwai ke hana paʻa i nā kaiapuni me ka hoʻololi ʻana i nā mahana kiʻekiʻe a me nā haʻahaʻa haʻahaʻa, ka ʻinoʻino ikaika, a me ka mālama ʻana i ka wikiwiki, e hoʻomaikaʻi nui i ka hoʻoili ʻana a me ka hana pono no nā mea kikoʻī e like me nā wafers a me nā mea optical.
ʻO Silicon Carbide (SiC) Bump Vacuum Chuck no ka Metrology a me ka nānā ʻana
Hoʻolālā ʻia no nā kaʻina nānā ʻana o ka wafer defect, ua hana ʻia kēia mea hana adsorption kiʻekiʻe mai ka silicon carbide (SiC) ceramic material. Hāʻawi kona ʻano hoʻoheheʻe kūʻokoʻa i ka ikaika adsorption vacuum i ka wā e hōʻemi ana i ka wahi hoʻopili me ka wafer, a laila e pale ai i ka pōʻino a i ʻole ka hoʻohaumia ʻana i ka ʻili wafer a me ka hōʻoia i ka paʻa a me ka pololei i ka wā o ka nānā ʻana. Hōʻike ka chuck i ka palahalaha maikaʻi loa (0.3-0.5 μm) a me kahi ʻili i hoʻoliʻi ʻia i ka aniani, i hui pū ʻia me ke kaumaha ultra-māmā a me ka ʻoʻoleʻa kiʻekiʻe e hōʻoia i ka paʻa i ka wā o ka neʻe wikiwiki. ʻO kāna coefficient haʻahaʻa haʻahaʻa o ka hoʻonui wela e hōʻoiaʻiʻo i ka paʻa o ka dimensional ma lalo o ka piʻi ʻana o ka mahana, ʻoiai ʻo ke kūpaʻa ʻana o ka lole e hoʻonui i ke ola lawelawe. Kākoʻo ka huahana i ka hoʻopilikino ʻana i nā kikoʻī 6, 8, a me 12-inihi e hoʻokō i nā pono nānā ʻana o nā nui wafer like ʻole.
ʻO ka Flip Chip Bonding Chuck
ʻO ka flip chip bonding chuck kahi mea nui i loko o nā kaʻina hana hoʻopaʻa chip flip-chip, i hoʻolālā ʻia no ka adsorbing wafers e hōʻoia i ka paʻa i ka wā kiʻekiʻe, nā hana hoʻopaʻa kiʻekiʻe. Hōʻike ia i kahi ʻili i hoʻoliʻi ʻia (flatness/parallelism ≤1 μm) a me nā ʻūhā kaila kinoea pololei e hoʻokō i ka ikaika adsorption vacuum like ʻole, e pale ana i ka neʻe ʻana a i ʻole ka pōʻino. ʻO kona koʻikoʻi kiʻekiʻe a me ka helu haʻahaʻa o ka hoʻonui wela (kokoke i ka mea silicon) e hōʻoia i ka paʻa o ka dimensional i nā wahi hoʻopaʻa wela kiʻekiʻe, ʻoiai nā mea kiʻekiʻe (e laʻa, silicon carbide a i ʻole nā ceramics kūikawā) e pale pono i ka permeation kinoea, e mālama ana i ka hilinaʻi ʻana i ka vacuum lōʻihi. Kākoʻo pū ʻia kēia mau hiʻohiʻona i ka pololei o ka hoʻopaʻa ʻana i ka micron-level a hoʻomaikaʻi nui i ka hua puʻupuʻu chip.
SiC Bonding Chuck
ʻO ka silicon carbide (SiC) bonding chuck he mea koʻikoʻi i nā kaʻina hana hoʻopili chip, i hoʻolālā ʻia no ka adsorbing a me ka hoʻopaʻa ʻana i nā wafers, e hōʻoia ana i ka hana ultra-stable ma lalo o nā kūlana hoʻopaʻa kiʻekiʻe a me ke kiʻekiʻe. Hana ʻia mai ke kiʻekiʻe kiʻekiʻe silicon carbide ceramic (porosity <0.1%), loaʻa ia i ka hāʻawi like ʻana o ka ikaika adsorption (deviation <5%) ma o ka nanometer-level mirror polishing (ka ʻili ʻili Ra <0.1 μm) a me ka pololei o ke kinoea channel grooves (pore diameters.) ʻO kona heluna haʻahaʻa haʻahaʻa o ka hoʻonui wela (4.5 × 10⁻⁶/℃) pili loa me nā wafer silika, e hōʻemi ana i ka warpage i hoʻoulu ʻia i ke kaumaha. Hoʻohui ʻia me ka ʻoʻoleʻa kiʻekiʻe (elastic modulus>400 GPa) a me ≤1 μm flatness/parallelism, e hōʻoiaʻiʻo i ka pololei o ka hoʻopili ʻana. Hoʻohana nui ʻia i ka pahu semiconductor, 3D stacking, a me Chiplet integration, kākoʻo ia i nā noi hana kiʻekiʻe e koi ana i ka pololei nanoscale a me ke kūpaʻa wela.
CMP Grinding Disc
ʻO ka CMP grinding disc he mea koʻikoʻi o nā mea hana chemical mechanical polishing (CMP), i hoʻolālā ʻia e paʻa a hoʻopaʻa paʻa i nā wafers i ka wā o ka polishing kiʻekiʻe, e hiki ai i ka nanometer-level global planarization. Hana ʻia mai nā mea kiʻekiʻe kiʻekiʻe, kiʻekiʻe kiʻekiʻe (e laʻa, silicon carbide ceramics a i ʻole nā mea hoʻohui kūikawā), e hōʻoiaʻiʻo i ka adsorption ʻokoʻa like ʻole ma o nā awāwa kinoea i hana pono ʻia. ʻO kona ʻili i hoʻoliʻi ʻia (flatness/parallelism ≤3 μm) e hōʻoiaʻiʻo i ka hoʻopili ʻole ʻana i ke kaumaha me nā wafers, aʻo kahi koena haʻahaʻa haʻahaʻa o ka hoʻonui ʻana i ka wela (kuʻi ʻia me ke silikoni) a me nā kahawai hoʻoluʻu kūloko e hoʻopau pono i ka deformation thermal. Hoʻohālikelike me nā wafers 12-inihi (750 mm anawaena), hoʻohana ka disc i ka ʻenehana hoʻopaʻa diffusion e hōʻoia i ka hoʻohui pono ʻana a me ka hilinaʻi lōʻihi o nā hale multilayer ma lalo o nā wela kiʻekiʻe a me nā puʻe, e hoʻonui nui i ka like ʻana o ke kaʻina CMP a me ka hua.
Hoʻokaʻawale ʻia nā ʻāpana ʻāpana SiC Ceramics ʻokoʻa
ʻO ke aniani kiʻi kiʻi kiʻi kiʻi (SiC).
ʻO ka Silicon Carbide (SiC) Square Mirror he mea kikoo kiʻekiʻe i hana ʻia mai ka silicon carbide ceramic kiʻekiʻe, i hoʻolālā ʻia no nā mea hana semiconductor kiʻekiʻe e like me nā mīkini lithography. Loaʻa iā ia ke kaumaha ultra-māmā a me ka ʻoʻoleʻa kiʻekiʻe (elastic modulus>400 GPa) ma o ka hoʻolālā hoʻolālā māmā māmā (e laʻa, ka hoʻoheheʻe ʻana i ka honeycomb ma hope), ʻoiai ʻo kāna mea hoʻonui haʻahaʻa haʻahaʻa haʻahaʻa (≈4.5 × 10⁻⁶/℃) e hōʻoia i ka hoʻopaʻa ʻana o ka mahana. ʻO ka ʻili aniani, ma hope o ka hoʻoliʻi pololei ʻana, loaʻa ka ≤1 μm flatness/parallelness, a me kona pale ʻana i ka lole ʻokoʻa (Mohs hardness 9.5) hoʻonui i ke ola lawelawe. Hoʻohana nui ʻia ia i nā keʻena hana mīkini lithography, nā mea hoʻonaninani laser, a me nā telescopes ākea kahi e koʻikoʻi ai ka pololei a me ke kūpaʻa.
ʻO nā alakaʻi alakaʻi hoʻolele lewa Silicon Carbide (SiC).
Hoʻohana ʻo Silicon Carbide (SiC) Air Floatation Guides i ka ʻenehana aerostatic bearing non-contact, kahi i hoʻokumu ʻia ai ke kinoea i hoʻopaʻa ʻia i kahi kiʻi ʻoniʻoni micron-level (maʻamau 3-20μm) e hoʻokō ai i ka neʻe ʻana o ka frictionless a me ka haʻalulu ʻole. Hāʻawi lākou i ka pololei o ka neʻe ʻana (ka pololei o ka hoʻonohonoho ʻana a hiki i ± 75nm) a me ka sub-micron geometric precision (straightness ± 0.1-0.5μm, flatness ≤1μm), i hoʻohana ʻia e ka mana hoʻopiʻi pani pani me nā unahi kikoʻī a i ʻole interferometer laser. ʻO ke kumu silicon carbide ceramic material (ʻo nā koho me Coresic® SP/Marvel Sic series) hāʻawi i ka ʻoʻoleʻa kiʻekiʻe (elastic modulus>400 GPa), ultra-low thermal expansion coefficient (4.0–4.5 × 10⁻⁶/K, pili i ke silikoni like ʻole). ʻO kāna hoʻolālā māmā (density 3.1g/cm³, ʻelua wale nō i ka alumini) e hōʻemi i ka neʻe inertia, ʻoiai ke kūpaʻa ʻokoʻa o ka lole (Mohs hardness 9.5) a me ka thermal stability e hōʻoia i ka hilinaʻi lōʻihi ma lalo o ka wikiwiki kiʻekiʻe (1m/s) a me nā kūlana kiʻekiʻe-wikiwiki (4G). Hoʻohana nui ʻia kēia mau alakaʻi i ka lithography semiconductor, nānā wafer, a me ka mīkini ultra-precision.
Nā Kukui Keʻa Silicon Carbide (SiC).
ʻO Silicon Carbide (SiC) Cross-Beams nā ʻāpana neʻe nui i hoʻolālā ʻia no nā lako semiconductor a me nā noi ʻoihana kiʻekiʻe, e hana nui ana e lawe i nā pae wafer a alakaʻi iā lākou ma nā alahele i kuhikuhi ʻia no ka wikiwiki kiʻekiʻe, ultra-precision motion. Ke hoʻohana nei i ka silicon carbide ceramic kiʻekiʻe (ʻo nā koho me Coresic® SP a i ʻole Marvel Sic series) a me ka hoʻolālā hoʻolālā māmā, loaʻa lākou i ke kaumaha ultra-māmā me ka ʻoʻoleʻa kiʻekiʻe (elastic modulus>400 GPa), a me kahi helu haʻahaʻa haʻahaʻa o ka hoʻonui wela (≈4.5 × 10/℃) <0.1%), e hōʻoia ana i ke kūpaʻa nanometric (flatness/parallelism ≤1μm) ma lalo o ke kaumaha wela a me ka mechanical. Kākoʻo kā lākou mau waiwai hoʻohui i nā hana kiʻekiʻe a me ka wikiwiki nui (e laʻa, 1m/s, 4G), e hoʻolilo iā lākou i mea kūpono no nā mīkini lithography, nā ʻōnaehana nānā wafer, a me ka hana kikoʻī, hoʻonui nui i ka pololei o ka neʻe a me ka maikaʻi o ka pane ʻana.
ʻO nā mea hoʻoneʻe Silicon Carbide (SiC).
ʻO ka Silicon Carbide (SiC) Motion Components nā ʻāpana koʻikoʻi i hoʻolālā ʻia no nā ʻōnaehana neʻe semiconductor kiʻekiʻe, me ka hoʻohana ʻana i nā mea SiC kiʻekiʻe kiʻekiʻe (e laʻa, Coresic® SP a i ʻole Marvel Sic series, porosity <0.1%) a me ka hoʻolālā hoʻolālā māmā e hoʻokō i ke kaumaha ultra-māmā me ka ʻoʻoleʻa kiʻekiʻe (elastic modulus >400). Me kahi helu haʻahaʻa haʻahaʻa o ka hoʻonui wela (≈4.5 × 10⁻⁶/℃), hōʻoia lākou i ke kūpaʻa nanometric (flatness/parallelism ≤1μm) ma lalo o nā loli wela. Kākoʻo kēia mau waiwai hoʻohui i nā hana kiʻekiʻe a me ka wikiwiki kiʻekiʻe (e laʻa, 1m/s, 4G), i mea kūpono no nā mīkini lithography, nā ʻōnaehana nānā wafer, a me ka hana pololei, e hoʻonui nui i ka pololei o ka neʻe a me ka maikaʻi o ka pane ʻana.
ʻO ka pāpaʻi ala ʻopika ʻo Silicon Carbide (SiC).
ʻO ka Silicon Carbide (SiC) Optical Path Plate kahi kahua kumu kumu i hoʻolālā ʻia no nā ʻōnaehana ʻelua-optical-alanui i nā lako nānā wafer. Hana ʻia mai ka silicon carbide ceramic kiʻekiʻe, loaʻa iā ia ka ultra-lightweight (density ≈3.1 g/cm³) a me ka ʻoʻoleʻa kiʻekiʻe (elastic modulus >400 GPa) ma o ka hoʻolālā ʻano māmā, ʻoiai e hōʻike ana i kahi helu ultra-haʻahaʻa (⁈0⁉⁉⁉⁶⁉⁄⁄. a me ke kiʻekiʻe kiʻekiʻe (porosity <0.1%), e hōʻoia ana i ke kūpaʻa nanometric (flatness/parallelism ≤0.02mm) ma lalo o ka wela a me ka mechanical fluctuations. Me kona nui kiʻekiʻe (900 × 900mm) a me ka hoʻokō ʻokoʻa ʻokoʻa, hāʻawi ia i kahi pae hoʻonohonoho paʻa paʻa lōʻihi no nā ʻōnaehana optical, hoʻonui nui i ka pololei o ka nānā ʻana a me ka hilinaʻi. Hoʻohana nui ʻia ia i ka semiconductor metrology, optical alignment, a me nā ʻōnaehana kiʻi kiʻekiʻe.
ʻO ke apo alakaʻi i uhi ʻia i ka Graphite + Tantalum Carbide
ʻO ka Graphite + Tantalum Carbide Coated Guide Ring he mea koʻikoʻi i hoʻolālā ʻia no nā lako ulu kristal hoʻokahi. ʻO kāna hana koʻikoʻi ke kuhikuhi pololei i ke kahe ʻana o ke kinoea kiʻekiʻe, e hōʻoiaʻiʻo ana i ka kūlike a me ka paʻa o ka mahana a me nā pā kahe i loko o ke keʻena pane. Hana ʻia mai ka substrate graphite maʻemaʻe kiʻekiʻe (ka maʻemaʻe> 99.99%) i uhi ʻia me kahi papa tantalum carbide (TaC) i hoʻopaʻa ʻia e CVD (ka uhi ʻana i ka maʻi haumia <5 ppm), hōʻike ia i ka conductivity thermal kūikawā (≈120 W/m·K) a me ka mahana wela a hiki i ka extremsness. 2200 ° C), pale pono i ka ʻino ʻana o ka mahu silika a me ka hoʻopaʻa ʻana i ka diffusion haumia. ʻO ke kūlike kiʻekiʻe o ka uhi (deviation <3%, ka uhi piha piha) e hōʻoia i ke alakaʻi ʻana i ke kinoea a me ka hilinaʻi lawelawe lōʻihi, e hoʻonui nui i ka maikaʻi a me ka hoʻoulu ʻana o ka ulu kristal hoʻokahi SiC.
ʻO ka ʻuala ʻo Silicon Carbide (SiC).
ʻO ka ʻiliahi ʻo Silicon Carbide (SiC).
ʻO ka Silicon Carbide (SiC) Vertical Furnace Tube kahi mea koʻikoʻi i hoʻolālā ʻia no nā ʻoihana ʻenehana kiʻekiʻe, e lawelawe nui ana ma ke ʻano he paipu pale waho e hōʻoia i ka hāʻawi ʻana i ka wela i loko o ka umu ma lalo o ka lewa lewa, me kahi mahana hana maʻamau ma kahi o 1200 ° C. Hana ʻia ma o ka paʻi 3D i hoʻohui ʻia i ka ʻenehana hana hoʻohui, hōʻike ia i kahi ʻano maʻiʻo haumia kumu <300 ppm, a hiki ke hoʻolako ʻia me kahi CVD silicon carbide coating (coating impurities <5 ppm). ʻO ka hui pū ʻana i ka conductivity thermal kiʻekiʻe (≈20 W/m·K) a me ke kūpaʻa haʻalulu ʻokoʻa (kū'ē i nā gradients thermal >800°C), hoʻohana nui ʻia i nā kaʻina wela kiʻekiʻe e like me ka mālama wela semiconductor, photovoltaic material sintering, a me ka precision ceramic production, e hoʻonui nui i ka like ʻana o ka wela a me ka lōʻihi.
Paipu Uhi Horizontal Silicon Carbide (SiC).
ʻO ka Silicon Carbide (SiC) Horizontal Furnace Tube kahi mea nui i hoʻolālā ʻia no nā kaʻina hana kiʻekiʻe, e lawelawe ana ma ke ʻano he paipu kaʻina hana i loko o nā lewa i loaʻa ka oxygen (reactive gas), nitrogen (protection gas), a me ka trace hydrogen chloride, me kahi mahana hana maʻamau ma kahi o 1250 ° C. Hana ʻia ma o ka paʻi 3D i hoʻohui ʻia i ka ʻenehana hana hoʻohui, hōʻike ia i kahi ʻano maʻiʻo haumia kumu <300 ppm, a hiki ke hoʻolako ʻia me kahi CVD silicon carbide coating (coating impurities <5 ppm). ʻO ka hoʻohui ʻana i ka conductivity thermal kiʻekiʻe (≈20 W/m·K) a me ke kūpaʻa haʻalulu ʻokoʻa (kū'ē i nā gradients thermal >800°C), kūpono ia no ke koi ʻana i nā noi semiconductor e like me ka oxidation, diffusion, a me ka hoʻopaʻa ʻana i nā kiʻiʻoniʻoni lahilahi, e hōʻoia ana i ka kūpaʻa o ke kūkulu ʻana, ka maʻemaʻe o ka ea, a me nā kūlana wela lōʻihi.
ʻO SiC Ceramic Fork Arms Introduction
Hana Hana Semiconductor
I ka hana ʻana i ka wafer semiconductor, ua hoʻohana mua ʻia nā lima lāʻau seramika SiC no ka hoʻololi ʻana a me ka hoʻonohonoho ʻana i nā wafers, ʻike pinepine ʻia ma:
- Lako Wafer Processing: E like me nā cassette wafer a me nā waʻa kaʻina hana, e hana paʻa ana i nā kaiapuni kiʻekiʻe-mehana a me ka corrosive.
- Nā Mīkini Lithography: Hoʻohana ʻia i nā ʻāpana kikoʻī e like me nā pae, nā alakaʻi, a me nā lima robotic, kahi e hōʻoia ai ko lākou rigidity kiʻekiʻe a me ka deformation thermal haʻahaʻa i ka pololei o ka pae nanometer.
- Nā Kaʻina Hana Etching a me ka Diffusion: Ke lawelawe nei ma ke ʻano he ICP etching trays a me nā ʻāpana no nā kaʻina diffusion semiconductor, ko lākou maʻemaʻe kiʻekiʻe a me ka pale ʻana i ka corrosion e pale i ka haumia i loko o nā keʻena kaʻina.
ʻOihana ʻOihana a me Robotics
He mea koʻikoʻi ʻo SiC ceramic fork arms i nā robots ʻoihana kiʻekiʻe a me nā mea hana automated.
- ʻO Robotic End Effectors: Hoʻohana ʻia no ka mālama ʻana, ka hui ʻana, a me ka hana pololei. ʻO kā lākou mau waiwai māmā (density ~ 3.21 g / cm³) e hoʻonui i ka wikiwiki a me ka maikaʻi o ka robot, ʻoiai ko lākou paʻakikī kiʻekiʻe (Vickers hardness ~2500) e hōʻoia i ka pale ʻana i ka lole.
- Nā Laina Hana Hana ʻAunoa: Ma nā hiʻohiʻona e koi ana i ke alapine kiʻekiʻe, ka hoʻokele pololei kiʻekiʻe (e laʻa, nā hale kūʻai e-commerce, hale mālama hale hana), hōʻoia nā lima lāʻau SiC i ka hana kūpaʻa lōʻihi.
Aerospace a me New Energy
Ma nā kaiapuni koʻikoʻi, hoʻohana nā lima lāʻau seramika SiC i ko lākou kūpaʻa wela kiʻekiʻe, kūpaʻa corrosion, a me ke kūpaʻa haʻalulu wela:
- Aerospace: Hoʻohana ʻia i nā mea koʻikoʻi o ka mokulele a me nā drones, kahi e kōkua ai kā lākou mau mea māmā a ikaika kiʻekiʻe e hōʻemi i ke kaumaha a hoʻonui i ka hana.
- ʻIke Hou: Hoʻohana ʻia i nā lako hana no ka ʻoihana photovoltaic (e laʻa, nā umu diffusion) a ma ke ʻano he ʻāpana hoʻonohonoho pololei i ka hana ʻana i ka pākaukau lithium-ion.
Ka Hana Hana Hana Kiekie
Hiki i nā lima fork ceramic SiC ke kū i nā mahana ma mua o 1600°C, e kūpono ana iā lākou no:
- Metallurgy, Ceramics, and Glass Industry: Hoʻohana ʻia i nā manipulators wela wela, nā papa hoʻonohonoho, a me nā pā pana.
- Nuclear Energy: Ma muli o ko lākou pale ʻana i ka radiation, kūpono lākou no kekahi mau ʻāpana i nā reactors nuklea.
Lako Lapaau
Ma ke kahua lapaʻau, hoʻohana mua ʻia nā lima lāʻau ceramic SiC no:
- Nā Lapaʻau Lapaʻau a me nā mea ʻokiʻoki: waiwai ʻia no ko lākou biocompatibility, pale ʻana i ka corrosion, a me ke kūpaʻa i nā wahi sterilization.
SiC Coating Overview
| Nā waiwai maʻamau | Units | Waiwai |
| Hoʻolālā |
| Māhele FCC β |
| Kūlana | Hakina (%) | 111 makemake |
| ʻAno nui | g/cm³ | 3.21 |
| ʻoʻoleʻa | ʻO ka paʻakikī o Vickers | 2500 |
| Kaha Wela | J·kg-1 ·K-1 | 640 |
| Hoʻonui wela 100–600 °C (212–1112 °F) | 10-6K-1 | 4.5 |
| ʻO Young's Modulus | Gpa (4pt piko, 1300 ℃) | 430 |
| Ka nui o ka palaoa | μm | 2~10 |
| Mahana Sublimation | ℃ | 2700 |
| Ikaika Pilikino | MPa (RT 4-point) | 415 |
| ʻO ke kau wela wela | (W/mK) | 300 |
ʻO nā ʻāpana hoʻolālā silikona karbide ceramic
Loaʻa ʻia nā ʻāpana hoʻolālā silicon carbide mai nā ʻāpana carbide silika i hoʻopaʻa ʻia ma o ka sintering. Hoʻohana nui ʻia lākou i ka automotive, machinery, chemical, semiconductor, space technology, microelectronics, and energy sectors, e pāʻani ana i kahi koʻikoʻi i nā noi like ʻole i loko o kēia mau ʻoihana. Ma muli o kā lākou mau waiwai kūʻokoʻa, ua lilo nā mea hana silicon carbide ceramic i mea kūpono no nā kūlana koʻikoʻi e pili ana i ke kiʻekiʻe kiʻekiʻe, ke kaomi kiʻekiʻe, ka corrosion, a me ka ʻaʻahu, e hāʻawi ana i ka hana hilinaʻi a me ka lōʻihi i nā wahi hana paʻakikī.SiC Seal Parts Overview
ʻO nā sila SiC kahi koho maikaʻi loa no nā kaiapuni koʻikoʻi (e like me ke kiʻekiʻe kiʻekiʻe, ke kaomi kiʻekiʻe, ka media corrosive, a me ke kapa kiʻekiʻe o ka wikiwiki) ma muli o ko lākou paʻakikī paʻakikī, kūpaʻa ʻaʻahu, kūpaʻa wela kiʻekiʻe (e kū ana i nā mahana a hiki i 1600 ° C a i ʻole 2000 ° C), a me ka pale ʻana i ka corrosion. ʻO kā lākou kiʻekiʻe thermal conductivity e hoʻomaʻamaʻa maikaʻi i ka hoʻoheheʻe ʻana i ka wela, ʻoiai ʻo kā lākou haʻahaʻa friction coefficient a me nā waiwai lubricating ponoʻī e hōʻoia hou i ka hilinaʻi sila a me ke ola lawelawe lōʻihi ma lalo o nā kūlana hana koʻikoʻi. Hoʻohana nui ʻia kēia mau hiʻohiʻona i nā sila SiC i nā ʻoihana e like me ka petrochemical, mining, semiconductor manufacturing, wastewater treatment, a me ka ikehu, e hōʻemi nui ana i nā kumukūʻai mālama, e hōʻemi ana i ka downtime, a me ka hoʻonui ʻana i ka pono o ka hana a me ka palekana.
Pōkole ʻo SiC Ceramic Plates
Kaulana ʻia nā pā seramika Silicon Carbide (SiC) no ko lākou ʻano paʻakikī (ʻo Mohs hardness a hiki i ka 9.5, kekona wale nō i ke daimana), ʻoi aku ka maikaʻi o ka thermal conductivity (ʻoi aku ma mua o ka hapa nui o nā ceramics no ka hoʻokele wela maikaʻi), a me ka inertness kemika a me ke kūpaʻa haʻalulu wela (me ka ikaika o ka waika, ka alkalis a me ka ikaika). ʻO kēia mau waiwai e hōʻoia i ka paʻa o ke kūkulu ʻana a me ka hana hilinaʻi i nā kaiapuni koʻikoʻi (e laʻa, ka wela kiʻekiʻe, abrasion, a me ka corrosion), ʻoiai e hoʻolōʻihi i ke ola lawelawe a me ka hōʻemi ʻana i nā pono mālama.
Hoʻohana nui ʻia nā papa seramika SiC i nā kula kiʻekiʻe:
• Nā Mea Hana Abrasive and Grinding: Leveraging ultra-high hardness no ka hana ʻana i nā huila wili a me nā mea hana polishing, e hoʻonui i ka pololei a me ka lōʻihi ma nā wahi abrasive.
•Nā Mea Hoʻomaʻamaʻa: E lawelawe ana ma ke ʻano he kapuahi a me nā ʻāpana kiln, e mālama ana i ke kūpaʻa ma luna o 1600°C no ka hoʻomaikaʻi ʻana i ka wela a hoʻemi i nā kumukūʻai mālama.
• ʻOihana Semiconductor: E hana ana ma ke ʻano he substrate no nā mea uila mana kiʻekiʻe (e laʻa, nā diodes mana a me nā mea hoʻonui RF), e kākoʻo ana i nā hana kiʻekiʻe a me ka wela kiʻekiʻe e hoʻoikaika i ka hilinaʻi a me ka pono o ka ikehu.
• Ka hoolei a me ka hoohehee: Hoololi i na mea kahiko i ka hana metala no ka hooiaio ana i ka maikai o ka wela a me ke ku'e ino kemika, hoonui i ka maikai o ka metala a me ke kumu kuai.
SiC Wafer Boat Abstract
Hāʻawi nā moku seramika XKH SiC i ke kūpaʻa wela kiʻekiʻe, ka inertness kemika, ka ʻenekinia pololei, a me ka hoʻokele waiwai, e hāʻawi ana i kahi hopena lawe kiʻekiʻe no ka hana semiconductor. Hoʻonui nui lākou i ka palekana o ka mālama ʻana i ka wafer, ka hoʻomaʻemaʻe, a me ka hana pono ʻana, e hana ana iā lākou i nā mea pono i ka hana wafer holomua.
Nā hoʻohana ʻana o nā moku seramika SiC:
Hoʻohana nui ʻia nā moku seramika SiC i nā kaʻina semiconductor mua, me:
• Nā Kaʻina Hana Hoʻomoe: E like me LPCVD (Low-Pressure Chemical Vapor Deposition) a me PECVD (Plasma-Enhanced Chemical Vapor Deposition).
• Nā Hana Kūlana Ki'eki'e
• Māmā & Hoʻomaʻemaʻe Kaʻina
He kūpono me nā kaʻina hana lewa a me ka ʻūhā,
He kūpono lākou no nā fabs e ʻimi nei e hōʻemi i nā pilikia o ka hoʻohaumia a hoʻomaikaʻi i ka hana hana.
Nā ʻāpana o ka Waʻa Wafer SiC:
| Nā Waiwai ʻenehana | ||||
| Papa kuhikuhi | Unite | Waiwai | ||
| Inoa Mea | ʻO ka hoʻoheheʻe Sintered Silicon Carbide | ʻO Silicon Carbide i hoʻopaʻa ʻole ʻia | ʻO Silicon Carbide i hana hou ʻia | |
| Huina | RBSiC | SSiC | R-SiC | |
| ʻAiʻi Nui | g/cm3 | 3 | 3.15 ± 0.03 | 2.60-2.70 |
| Ikaika Flexural | MPa (kpsi) | 338(49) | 380(55) | 80-90 (20°C) 90-100(1400°C) |
| Ka ikaika hoʻopili | MPa (kpsi) | 1120(158) | 3970(560) | > 600 |
| ʻoʻoleʻa | Knoop | 2700 | 2800 | / |
| Haʻihaʻi Paʻa | MPa m1/2 | 4.5 | 4 | / |
| ʻO ka hoʻoili wela | W/mk | 95 | 120 | 23 |
| Coefficient o ka hoonui wela | 10-6.1/°C | 5 | 4 | 4.7 |
| Wela Kūikawā | Joule/g 0k | 0.8 | 0.67 | / |
| Max wela i ka ea | ℃ | 1200 | 1500 | 1600 |
| Elastic Modulus | Gpa | 360 | 410 | 240 |
Hōʻike ʻia nā ʻāpana maʻamau ʻo SiC Ceramics
SiC Ceramic Membrane
ʻO ka membrane ceramic SiC kahi hopena kānana holomua i hana ʻia mai ka silicon carbide maʻemaʻe, e hōʻike ana i kahi ʻano ʻekolu-layer ikaika (ka papa kākoʻo, ka papa hoʻololi, a me ka membrane hoʻokaʻawale) i hana ʻia ma o nā kaʻina sintering kiʻekiʻe. Mālama kēia hoʻolālā i ka ikaika mechanical kūikawā, ka hāʻawi ʻana i ka nui o ka pore pololei, a me ka lōʻihi o ka lōʻihi. ʻOi maikaʻi ia i nā noi ʻoihana like ʻole ma o ka hoʻokaʻawale maikaʻi ʻana, ka noʻonoʻo ʻana, a me ka hoʻomaʻemaʻe ʻana i nā wai. ʻO nā mea nui e hoʻohana ʻia ai ka mālama ʻana i ka wai a me ka wai ʻino (ka wehe ʻana i nā mea paʻa paʻa, bacteria, a me nā mea hoʻohaumia kūlohelohe), ka hoʻoponopono ʻana i ka meaʻai a me ka mea inu (hoʻomaʻamaʻa ʻana a me ka noʻonoʻo ʻana i ka wai, waiu, a me nā wai fermented), nā lāʻau lapaʻau a me ka biotechnology (hoʻomaʻemaʻe i nā biofluids a me nā intermediates), ka hana kemika ( kānana ʻana i nā wai corrosive a me nā mea hoʻoheheʻe), a me ka ʻaila hoʻomaʻemaʻe.
Paipu SiC
ʻO nā paipu SiC (silicon carbide) nā ʻāpana seramika hana kiʻekiʻe i hoʻolālā ʻia no nā ʻōnaehana umu semiconductor, i hana ʻia mai ka silicon carbide maʻemaʻe maikaʻi loa ma o nā ʻenehana sintering kiʻekiʻe. Hōʻike lākou i ka conductivity thermal maikaʻi loa, ke kūpaʻa kiʻekiʻe-mehana (kū ʻole ma luna o 1600 ° C), a me ke kūpaʻa corrosion kemika. ʻO kā lākou mea hoʻonui haʻahaʻa haʻahaʻa haʻahaʻa a me ka ikaika mechanical kiʻekiʻe e hōʻoia i ka paʻa o ka dimensional ma lalo o ke kaʻa uila wela, e hōʻemi maikaʻi ana i ka deformation a me ka ʻaʻahu. Ua kūpono nā paipu SiC no nā umu diffusion, oxidation furnaces, a me nā ʻōnaehana LPCVD/PECVD, e ʻae ana i ka hāʻawi ʻana i ka mahana like ʻole a me nā kūlana hana paʻa e hōʻemi i nā hemahema wafer a hoʻomaikaʻi i ka homogeneity deposition kiʻiʻoniʻoni lahilahi. Hoʻohui ʻia, ʻo ke ʻano paʻa, ʻaʻole porous a me ka inertness kemika o SiC e pale aku i ka erosion mai nā kinoea reactive e like me ka oxygen, hydrogen, a me ka amonia, e hoʻolōʻihi i ke ola lawelawe a me ka hōʻoia ʻana i ka maʻemaʻe o ke kaʻina hana. Hiki ke hoʻopilikino ʻia nā paipu SiC i ka nui a me ka mānoanoa o ka paia, me ka mīkini pololei e hoʻokō ai i nā ʻili o loko maʻemaʻe a me ka concentricity kiʻekiʻe e kākoʻo i ke kahe laminar a me nā ʻaoʻao wela kaulike. ʻO nā koho polishing a i ʻole ka uhi ʻana e hōʻemi hou i ka hoʻokumu ʻana o nā ʻāpana a hoʻonui i ka pale ʻana i ka corrosion, e hoʻokō i nā koi koʻikoʻi o ka hana semiconductor no ka pololei a me ka hilinaʻi.
SiC Ceramic Cantilever hoe
ʻO ka hoʻolālā monolithic o SiC cantilever blades e hoʻonui nui i ka ikaika mechanical a me ka like ʻana o ka wela i ka wā e hoʻopau ana i nā hono a me nā wahi nāwaliwali maʻamau i nā mea hana. Hoʻopili pololei ʻia ko lākou ʻili a hiki i ka hoʻopau ʻana i ka aniani, e hōʻemi ana i ka hoʻokumu ʻana i nā ʻāpana a me ka hoʻokō ʻana i nā kūlana maʻemaʻe. ʻO ka inertia kemika kūlohelohe o SiC ka mea e pale ai i ka hoʻokuʻu ʻana, ka ʻino, a me ke kaʻina hana i nā kaiapuni reactive (e laʻa, oxygen, mahu), e hōʻoia ana i ka paʻa a me ka hilinaʻi i nā kaʻina diffusion/oxidation. ʻOiai ke kaʻa uila wela, mālama ʻo SiC i ka kūpaʻa o ke kūkulu ʻana, hoʻonui i ke ola lawelawe a me ka hōʻemi ʻana i ka wā mālama. ʻO ke ʻano māmā o SiC e hiki ai i ka pane wela ʻoi aku ka wikiwiki, ka wikiwiki o ka hoʻomehana / hoʻoluʻu a me ka hoʻomaikaʻi ʻana i ka huahana a me ka pono o ka ikehu. Loaʻa kēia mau lau i nā nui i hiki ke hoʻopili ʻia (kūpono me 100mm a 300mm+ wafers) a hoʻololi i nā hoʻolālā umu like ʻole, e hāʻawi ana i ka hana maʻamau i nā kaʻina semiconductor mua a me hope.
Alumina Vacuum Chuck Introduction
ʻO Al₂O₃ nā pahu pahu he mea koʻikoʻi i ka hana semiconductor, e hāʻawi ana i ke kākoʻo paʻa a pololei i nā kaʻina hana he nui:•Thinning: Hāʻawi i ke kākoʻo like ʻole i ka wā wiwi wafer, e hōʻoia ana i ka hoʻemi kiʻekiʻe o ka substrate no ka hoʻonui ʻana i ka wela chip a me ka hana ʻana o ka mea hana.
• Dicing: Hāʻawi i ka adsorption paʻa i ka wafer dicing, e hōʻemi ana i ka pōʻino a me ka hōʻoia ʻana i nā ʻoki maʻemaʻe no kēlā me kēia pahu.
• Hoʻomaʻemaʻe: ʻO kona laumā, ʻano like ʻole adsorption ʻili e hiki ai ke hoʻopau pono i nā mea haumia me ka ʻole e hōʻino i nā wafers i ka wā hoʻomaʻemaʻe.
•Ka lawe ʻana: Hāʻawi i ke kākoʻo hilinaʻi a paʻa i ka wā o ka lawelawe ʻana a me ka lawe ʻana i ka wafer, e hōʻemi ana i ka pōʻino a me ka haumia.
1.Uniform Micro-Porous Ceramic Technology
• Hoʻohana i nā nano-powders e hana i nā pores i puʻunaue like ʻia a hui pū ʻia, e loaʻa ai ka porosity kiʻekiʻe a me kahi ʻano paʻa like no ke kākoʻo wafer kūpaʻa a hilinaʻi.
2. Nā Pono Mea Kūikawā.
- Hana ʻia mai ka ultra-pure 99.99% alumina (Al₂O₃), hōʻike ia:
• Nā Waiwai Thermal: ʻO ke kūpaʻa wela kiʻekiʻe a me ka conductivity thermal maikaʻi loa, kūpono i nā kaiapuni semiconductor wela kiʻekiʻe.
•Mechanical Properties: ʻO ka ikaika kiʻekiʻe a me ka paʻakikī e hoʻopaʻa i ka lōʻihi, ke kūpaʻa ʻaʻahu, a me ke ola lawelawe lōʻihi.
• Nā Pōmaika'i Hou
3. ʻOi aku ka palahalaha a me ka Parallelism•E hōʻoia i ka pololei a me ka paʻa o ka wafer lawelawe me ka kiʻekiʻe palahalaha a me ka like like, e hoemi ana i ka poino pilikia a me ka hooiaio ana i ka hana ana i nā hualoaʻa. ʻO kāna mau ea permeability maikaʻi a me ka ikaika adsorption like e hoʻonui i ka hilinaʻi hana.
Hoʻohui ka Al₂O₃ vacuum chuck i ka ʻenehana micro-porous holomua, ʻano waiwai waiwai, a me ka pololei kiʻekiʻe e kākoʻo i nā kaʻina semiconductor koʻikoʻi, e hōʻoia i ka pono, hilinaʻi, a me ka hoʻomalu ʻana i ka hoʻopaʻa ʻana ma waena o ka thinning, dicing, hoʻomaʻemaʻe, a me ka lawe ʻana.
Alumina Robot Arm & Alumina Ceramic End Effector pōkole
ʻO nā lima robotic seramika alumina (Al₂O₃) nā mea koʻikoʻi no ka lawelawe ʻana i ka wafer i ka hana semiconductor. Hoʻopili pololei lākou i nā wafers a nona ke kuleana no ka hoʻololi pololei a me ka hoʻonohonoho ʻana i nā wahi koi e like me ka vacuum a i ʻole nā kūlana wela kiʻekiʻe. Aia kā lākou waiwai nui i ka hōʻoia ʻana i ka palekana o ka wafer, ka pale ʻana i ka hoʻohaumia ʻana, a me ka hoʻomaikaʻi ʻana i ka pono o ka hana ʻana o nā mea hana a me ka hoʻohua ʻana ma o nā waiwai waiwai.
| Anana hiʻona | Ka wehewehe kikoʻī |
| Na Waiwai Mechanical | ʻO ka alumina maʻemaʻe kiʻekiʻe (e laʻa,> 99%) hāʻawi i ka paʻakikī kiʻekiʻe (Mohs hardness a hiki i 9) a me ka ikaika flexural (a hiki i 250-500 MPa), e hōʻoiaʻiʻo ana i ka pale ʻana a me ka pale ʻana i ka deformation, a laila e hoʻolōʻihi i ke ola lawelawe.
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| Hoʻolaula uila | ʻO ke kūpaʻa wela o ka lumi a hiki i 10¹⁵ Ω·cm a me ka ikaika insulation o 15 kV/mm e pale pono i ka hoʻokuʻu electrostatic (ESD), pale i nā wafers koʻikoʻi mai ka hoʻopili uila a me ka pōʻino.
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| ʻO ke kūpaʻa wela | Hiki i ka helu heheʻe ke kiʻekiʻe e like me 2050°C hiki ke kū i nā kaʻina hana wela kiʻekiʻe (e laʻa, RTA, CVD) i ka hana semiconductor. ʻO ka hoʻonui haʻahaʻa haʻahaʻa haʻahaʻa e hōʻemi i ka warping a mālama i ka paʻa o ka dimensional ma lalo o ka wela.
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| ʻO ka hoʻomaʻemaʻe kemika | Inert i ka hapa nui o nā waikawa, alkalis, kaʻina kinoea hana, a me nā mea hoʻomaʻemaʻe, e pale ana i ka hoʻohaumia ʻana i nā ʻāpana a i ʻole ka hoʻokuʻu ʻana i nā ion metala. Mālama kēia i kahi kaiapuni hana hoʻomaʻemaʻe ultra-maʻemaʻe a pale i ka hoʻohaumia ʻana i ka ʻili wafer.
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| Nā Pōmaikaʻi ʻē aʻe | Hāʻawi ka ʻenehana hana oʻo i ke kumukūʻai kiʻekiʻe; Hiki ke hoʻomaʻamaʻa pololei ʻia nā ʻili i ka haʻahaʻa haʻahaʻa, e hōʻemi hou ana i nā pilikia o ka hana ʻana.
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Hoʻohana nui ʻia nā lima robotic alumina ceramic i nā kaʻina hana semiconductor mua hope, me:
• Ka lawelawe ʻana a me ka hoʻonoho ʻana i ka Wafer: Hoʻololi a pololei i nā wafers (e laʻa, 100mm a 300mm+ ka nui) i loko o ka ʻea a i ʻole ka hoʻomaʻemaʻe kiʻekiʻe inert kinoea honua, e hōʻemi ana i ka pōʻino a me ka pōʻino.
•Nā Kaʻina Hana Kiʻekiʻe: E like me ka wikiwiki wela (RTA), ka hoʻoheheʻe ʻana o ka mahu (CVD), a me ka etching plasma, kahi e mālama ai i ka paʻa ma lalo o nā wela kiʻekiʻe, e hōʻoia ana i ka paʻa o ka hana a me ka hua.
• Nā Pūnaehana Wafer Handling: Hoʻohui ʻia i loko o nā robots lawelawe wafer ma ke ʻano he hopena hopena e hoʻololi i ka wafer ma waena o nā mea hana, e hoʻonui ai i ka pono hana.
Ka hopena
Hoʻokumu ʻo XKH i ka R&D a me ka hana ʻana i nā ʻāpana seramika silicon carbide (SiC) a me nā alumina (Al₂O₃), me nā lima robotic, nā hoe cantilever, nā pahu pahu, nā waʻa wafer, nā ipu umu, a me nā ʻāpana hana kiʻekiʻe, lawelawe i nā semiconductors, ka ikehu hou, aerospace, a me nā ʻoihana kiʻekiʻe. Hoʻopili mākou i ka hana pololei, ka mana koʻikoʻi, a me ka ʻenehana hou, e hoʻohana ana i nā kaʻina sintering kiʻekiʻe (e laʻa, pressureless sintering, reaction sintering) a me nā ʻenehana mīkini pololei (eg, CNC grinding, polishing) e hōʻoia i ke kūʻokoʻa kiʻekiʻe kiʻekiʻe, ikaika mechanical, inertness kemika, a me ka pololei dimensional. Kākoʻo mākou i ka hana maʻamau e pili ana i nā kaha kiʻi, e hāʻawi ana i nā hoʻonā i hoʻohālikelike ʻia no nā ana, nā ʻano, ka hoʻopau ʻana i ka ʻili, a me nā māka waiwai e hoʻokō i nā koi o ka mea kūʻai aku. Hoʻopaʻa mākou i ka hāʻawi ʻana i nā ʻāpana keramika hilinaʻi a maikaʻi no ka hana kiʻekiʻe kiʻekiʻe o ka honua, hoʻomaikaʻi i ka hana ʻana o nā mea hana a me ka pono hana no kā mākou mea kūʻai.
