12 Inch SiC substrate Diameter 300mm Manoanoa 750μm 4H-N Type hiki ke hoʻopilikino ʻia

12 'īniha SiC substrate anawaena 300mm mānoanoa 750μm 4H-N ʻano hiki ke hoʻopilikino ʻia ke kiʻi i hōʻike ʻia.

ʻO ka wehewehe pōkole:

I ka manawa koʻikoʻi i ka neʻe ʻana o ka ʻoihana semiconductor i nā hopena ʻoi aku ka maikaʻi a me ka paʻakikī, ʻo ka puka ʻana o 12-inch SiC substrate (12-inch silicon carbide substrate) ua hoʻololi maoli i ka ʻāina. Hoʻohālikelike ʻia me nā kikoʻī kuʻuna 6-inch a me 8-inch, ʻo ka pōmaikaʻi nui o ka substrate 12-inch e hoʻonui i ka nui o nā chips i hana ʻia i ka wafer ma mua o ʻehā. Hoʻohui ʻia, hoʻemi ʻia ke kumukūʻai o 12-inch SiC substrate e 35-40% i hoʻohālikelike ʻia i nā substrates 8-inch maʻamau, he mea koʻikoʻi ia no ka hoʻolaha ākea o nā huahana hopena.
Ma ka hoʻohana ʻana i kā mākou ʻenehana hoʻoulu ʻana i ka mokuahi, ua loaʻa iā mākou ka mana alakaʻi o ka ʻoihana ma luna o ka dislocation density i 12-inch crystals, e hāʻawi ana i kahi kumu waiwai no ka hana ʻana i nā mea hana. He mea koʻikoʻi kēia holomua ma waena o ka hemahema o ka chip honua i kēia manawa.

ʻO nā mea mana koʻikoʻi i nā noi o kēlā me kēia lā - e like me nā kikowaena EV wikiwiki a me nā kahua kahua 5G - ke hoʻohana nui nei i kēia substrate nui. ʻOi loa i ka wela kiʻekiʻe, kiʻekiʻe-voltage, a me nā wahi hana koʻikoʻi ʻē aʻe, ʻo 12-inch SiC substrate e hōʻike ana i ke kūpaʻa ʻoi aku ka maikaʻi ma mua o nā mea pilikika.

E hoʻouna i ka leka uila iā mākou

Nā hiʻohiʻona

Nā palena ʻenehana

12 iniha Silicon Carbide (SiC) Substrate Specification
Papa		Hana ʻia ʻo ZeroMPD Papa(Z Papa)	Hana Hana maʻamau Papa(P)		Papa Dummy (Ka Papa D)
Anawaena		3 0 0 mm~1305mm
mānoanoa	4H-N	750μm±15 μm	750μm±25μm
	4H-SI	750μm±15 μm	750μm±25μm
Kūlana Wafer		Koi aku: 4.0° i <1120 >±0.5° no 4H-N, Ma ke axis: <0001>±0.5° no 4H-SI
Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kū'ē	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Kūlana Pāha mua		{10-10} ±5.0°
Ka lōʻihi pālahalaha	4H-N	N/A
	4H-SI	Notch
Hoʻokuʻu Edge		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
ʻoʻoleʻa		Polani Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe Nā Papa Hex Ma ka Māmā Kiʻekiʻe Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe Hoʻokomo ʻia ʻo Carbon Visual ʻO ka ʻili o ka ʻili silikoni e ka māmā ikaika loa		ʻAʻohe ʻĀpana hui ≤0.05% ʻAʻohe ʻĀpana hui ≤0.05% ʻAʻohe			Huina lōʻihi ≤ 20 mm, hoʻokahi lōʻihi≤2 mm ʻĀpana hui ≤0.1% ʻĀpana huila≤3% ʻĀpana hui ≤3% Hoʻohui lōʻihi≤1×wafer anawaena
Nā Kiʻi Kiʻi Ma ka Māmā Kiʻekiʻe		ʻAʻohe ʻae ʻia ≥0.2mm laula a me ka hohonu			7 ʻae ʻia, ≤1 mm kēlā me kēia
(TSD) Wehewehe ʻia ka wiliwili wiliwili		≤500 knm-2		N/A
(BPD) Wehewehe kahua mokulele		≤1000 knm-2		N/A
ʻO ka hoʻohaumia ʻana i ka ʻili o ka Silicon e ka māmā ikaika kiʻekiʻe		ʻAʻohe
Hoʻopili ʻia		ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi
Nā memo:
1 Pili nā palena hemahema i ka ʻili wafer holoʻokoʻa koe wale nō ka wahi i kāpae ʻia. 2 Pono e nānā ʻia nā ʻōpala ma ka maka Si wale nō. 3 ʻO ka ʻikepili dislocation mai nā wafers i kālai ʻia KOH wale nō.

Nā mea nui

1. Hoʻonui i ka mana a me ke kumu kūʻai: ʻO ka hana nui o 12-inch SiC substrate (12-inch silicon carbide substrate) hōʻailona i kahi au hou i ka hana semiconductor. ʻO ka nui o nā ʻāpana i loaʻa mai kahi wafer hoʻokahi a hiki i ka 2.25 mau manawa ma mua o nā substrates 8-inihi, e alakaʻi pololei ana i kahi lele i ka hana pono. Hōʻike ka manaʻo o ka mea kūʻai aku i ka hoʻohana ʻana i nā substrates 12-inihi i hōʻemi i kā lākou mana hana module mana e 28%, e hana ana i kahi lanakila hoʻokūkū hoʻoholo i ka mākeke hakakā ikaika.
2.Oioii Kino Pono: Ka 12-iniha SiC substrate hoʻoili a pau pono o ka silika carbide mea - kona thermal conductivity he 3 manawa o ke kilika, oiai kona breakdown ikaika kahua a hiki i 10 manawa o ke kilika. ʻO kēia mau hiʻohiʻona e hiki ai i nā mea hana i hoʻokumu ʻia ma nā substrates 12-inihi e hana paʻa i nā kaiapuni kiʻekiʻe ma mua o 200°C, e kūpono loa ia no nā noi koi e like me nā kaʻa uila.
3.Surface Treatment Technology: Ua hoʻomohala mākou i kahi kaʻina hana hou chemical mechanical polishing (CMP) kūikawā no 12-inch SiC substrates, e loaʻa ana i ka palahalaha o ka ʻili atomika (Ra<0.15nm). Hoʻopau kēia holomua i ka paʻakikī o ka honua holoʻokoʻa o ka nui-diameter silicon carbide wafer surface treatment, hoʻomaʻemaʻe i nā mea pale no ka ulu epitaxial kiʻekiʻe.
4. Thermal Management Performance: Ma nā hana hoʻohana, 12-inch SiC substrates e hōʻike i nā mana hoʻoheheʻe wela. Hōʻike ka ʻikepili hoʻāʻo ma lalo o ka mana like like, e hana ana nā mea e hoʻohana ana i nā substrates 12-inch i nā mahana 40-50°C haʻahaʻa ma mua o nā mea hana silika, me ka hoʻonui nui ʻana i ke ola lawelawe o nā lako.

Nā noi nui

1. New Energy Vehicle Ecosystem: ʻO ka 12-inch SiC substrate (12-inch silicon carbide substrate) ke hoʻololi nei i ka hoʻolālā kaʻa uila. Mai nā mea hoʻoili ma luna (OBC) i nā mea hoʻohuli nui a me nā ʻōnaehana hoʻokele pākaukau, ʻo ka hoʻomaikaʻi maikaʻi ʻana i lawe ʻia e nā substrates 12-inch e hoʻonui i ke kaʻa e 5-8%. Hōʻike nā hōʻike mai kahi mea hana kaʻa koʻikoʻi i ka hoʻohana ʻana i kā mākou substrates 12-inch i hōʻemi i ka nalowale o ka ikehu i kā lākou ʻōnaehana wikiwiki e 62%.
2.Renewable Energy Sector: Ma nā kikowaena mana photovoltaic, nā mea hoʻohuli i hoʻokumu ʻia ma 12-inch SiC substrates ʻaʻole wale nā hiʻohiʻona ʻano liʻiliʻi akā loaʻa pū kekahi i ka hoʻololi ʻana ma mua o 99%. ʻOi aku i nā hiʻohiʻona hanauna i puʻunaue ʻia, ua unuhi kēia hana kiʻekiʻe i ka mālama kālā makahiki o nā haneli haneli o nā yuan i nā poho uila no nā mea hana.
3.Industrial Automation: ʻO nā mea hoʻololi pinepine e hoʻohana ana i nā substrates 12-inch e hōʻike i ka hana maikaʻi loa i nā robots ʻoihana, nā mea mīkini CNC, a me nā mea hana ʻē aʻe. ʻO kā lākou mau hiʻohiʻona hoʻololi kiʻekiʻe e hoʻomaikaʻi i ka wikiwiki pane kaʻa e 30% ʻoiai e hōʻemi ana i ka interference electromagnetic i kahi hapakolu o nā hopena maʻamau.
4. Consumer Electronics Innovation: Ua hoʻomaka nā ʻenehana hoʻopiʻi wikiwiki o ka hanauna hou e hoʻohana i nā substrates 12-inch SiC. Manaʻo ʻia e hoʻololi piha nā huahana hoʻopaʻa wikiwiki ma luna o 65W i nā solutions silicon carbide, me nā substrates 12-inihi e puka mai ana ma ke ʻano he koho maikaʻi loa.

ʻO nā lawelawe kūikawā XKH no 12-inch SiC Substrate

No ka hoʻokō ʻana i nā koi kikoʻī no nā substrates 12-inch SiC (12-inch silicon carbide substrates), hāʻawi ʻo XKH i ke kākoʻo lawelawe piha:
1. Hoʻopilikino mānoanoa:
Hāʻawi mākou i nā substrates 12-inch i nā kikoʻī mānoanoa like ʻole me 725μm e hoʻokō i nā pono noi like ʻole.
2. ʻO ka hoʻopaʻa ʻana i ka hana:
Kākoʻo kā mākou hana hana i nā ʻano conductivity he nui me nā substrates n-type a me p-type, me ka mana resistivity pololei ma ka laulā o 0.01-0.02Ω·cm.
3. Nā lawelawe ho'āʻo:
Me nā lako hoʻāʻo wafer-level piha, hāʻawi mākou i nā hōʻike nānā piha.
Hoʻomaopopo ʻo XKH i kēlā me kēia mea kūʻai aku i nā koi kūikawā no 12-inch SiC substrates. No laila ke hāʻawi nei mākou i nā hiʻohiʻona hui ʻoihana maʻalahi e hāʻawi i nā hopena hoʻokūkū, inā paha no:
· Nā laʻana R&D
· Nā kūʻai hoʻohua nui
ʻO kā mākou mau lawelawe maʻamau e hōʻoia e hiki iā mākou ke hoʻokō i kāu mau pono ʻenehana a me nā pono hana no nā substrates 12-inch SiC.