12 ʻīniha SiC substrate Diameter 300mm Mānoanoa 750μm Hiki ke hoʻopilikino ʻia ke ʻano 4H-N

Wehewehe Pōkole:

Ma kahi manawa koʻikoʻi o ka hoʻololi ʻana o ka ʻoihana semiconductor i nā hopena ʻoi aku ka maikaʻi a me ka liʻiliʻi, ua hoʻololi nui ka puka ʻana mai o ka substrate SiC 12-'īniha (12-'īniha silicon carbide substrate) i ke ʻano o ka ʻāina. Ke hoʻohālikelike ʻia me nā kikoʻī kuʻuna 6-'īniha a me 8-'īniha, ʻo ka pōmaikaʻi nui o ka substrate 12-'īniha e hoʻonui i ka nui o nā ʻāpana i hana ʻia no kēlā me kēia wafer ma mua o ʻehā manawa. Eia kekahi, ua hoʻemi ʻia ke kumukūʻai o ka substrate SiC 12-'īniha ma 35-40% i hoʻohālikelike ʻia me nā substrates 8-'īniha maʻamau, he mea nui ia no ka hoʻohana nui ʻia ʻana o nā huahana hope.
Ma ka hoʻohana ʻana i kā mākou ʻenehana ulu lawe mahu ponoʻī, ua hoʻokō mākou i ka mana alakaʻi ʻoihana ma luna o ka dislocation density i loko o nā kristal 12-'īniha, e hāʻawi ana i kahi kumu waiwai kūikawā no ka hana ʻana i nā hāmeʻa ma hope. He mea koʻikoʻi kēia holomua i waena o ka nele o nā chips honua i kēia manawa.

ʻO nā mea mana koʻikoʻi i nā hana o kēlā me kēia lā—e like me nā kikowaena hoʻouka wikiwiki EV a me nā kikowaena kumu 5G—ke hoʻohana nui nei i kēia substrate nui. ʻOi loa aku i nā wahi hana wela kiʻekiʻe, voltage kiʻekiʻe, a me nā wahi hana ʻino ʻē aʻe, hōʻike ka substrate SiC 12-'īniha i ke kūpaʻa maikaʻi loa i hoʻohālikelike ʻia me nā mea i hoʻokumu ʻia i ka silicon.

E leka uila mai iā mākou

Nā hiʻohiʻona

Nā palena loea

ʻO ke kikoʻī o ka substrate Silicon Carbide (SiC) 12 ʻīniha
Papa		Hana ʻana o ZeroMPD Papa (Papa Z)	Hana Maʻamau Papa (Papa P)		Papa Dummy (Papa D)
Anawaena		3 0 0 mm~1305mm
Mānoanoa	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Hoʻonohonoho Wafer		ʻO ke axis ma waho: 4.0° i ka ʻaoʻao <1120 >±0.5° no 4H-N, Ma ke axis: <0001>±0.5° no 4H-SI
Ka nui o ka micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ke kū'ē ʻana	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Kūlana Pālahalaha Mua		{10-10} ±5.0°
Ka Lōʻihi Palahalaha Mua	4H-N	ʻAʻohe
	4H-SI	ʻOki
Hoʻokaʻawale ʻana i ka lihi		3 mm
LTV/TTV/Kakaka/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
ʻOʻoleʻa		Polani Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe Nā Hoʻokomo Kalapona ʻIke Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe		ʻAʻohe ʻĀpana hōʻuluʻulu ≤0.05% ʻAʻohe ʻĀpana hōʻuluʻulu ≤0.05% ʻAʻohe			Ka lōʻihi hui ≤ 20 mm, ka lōʻihi hoʻokahi ≤2 mm ʻĀpana hōʻuluʻulu ≤0.1% ʻĀpana hōʻuluʻulu ≤3% ʻĀpana hōʻuluʻulu ≤3% Ka lōʻihi huina ≤1 × ke anawaena wafer
Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe		ʻAʻohe mea i ʻae ʻia ≥0.2mm ka laulā a me ka hohonu			7 i ʻae ʻia, ≤1 mm kēlā me kēia
(TSD) Hoʻoneʻe ʻana i ka wili wili		≤500 kenimika-2		ʻAʻohe
(BPD) Ka neʻe ʻana o ka mokulele kumu		≤1000 kenimika-2		ʻAʻohe
Ka haumia ʻana o ka ʻili Silicon e ka mālamalama ikaika kiʻekiʻe		ʻAʻohe
Ka hoʻopili ʻana		Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi
Nā memo:
1 Pili nā palena kīnā i ka ʻili wafer holoʻokoʻa koe wale nō ka ʻāpana hoʻokoe lihi. Pono e nānā ʻia nā ʻōpala ma ka maka Si wale nō. 3 Mai nā wafers i kālai ʻia ʻo KOH wale nō ka ʻikepili dislocation.

Nā Hiʻohiʻona Koʻikoʻi

1. Ka Mana Hana a me nā Pōmaikaʻi Kumukūʻai: ʻO ka hana nui ʻana o ka substrate SiC 12-'īniha (12-'īniha silicon carbide substrate) e hōʻailona ana i kahi au hou i ka hana semiconductor. ʻO ka nui o nā ʻāpana i loaʻa mai kahi wafer hoʻokahi e hiki aku i 2.25 mau manawa o nā substrates 8-'īniha, e hoʻokele pololei ana i kahi lele i ka pono hana. Hōʻike ka manaʻo o nā mea kūʻai aku ua hōʻemi ka hoʻohana ʻana i nā substrates 12-'īniha i kā lākou kumukūʻai hana module mana ma 28%, e hana ana i kahi pono hoʻokūkū koʻikoʻi ma ka mākeke hoʻokūkū ikaika.
2. Nā Waiwai Kino Kūikawā: Loaʻa i ka substrate SiC 12-'īniha nā pono āpau o ka mea silicon carbide - ʻo kona conductivity thermal he 3 manawa o ka silicon, ʻoiai ʻo kona ikaika breakdown field e hiki aku i 10 manawa o ka silicon. Hiki i kēia mau ʻano i nā mea hana e pili ana i nā substrates 12-'īniha ke hana paʻa i nā wahi wela kiʻekiʻe ma mua o 200°C, e kūpono loa ana no nā noi koi e like me nā kaʻa uila.
3. ʻEnehana Hoʻōla ʻIli: Ua hoʻomohala mākou i kahi kaʻina hana hoʻomaʻemaʻe kemika hou (CMP) no nā substrates SiC 12-'īniha, e hoʻokō ana i ka palahalaha ʻili atomika (Ra<0.15nm). Hoʻoponopono kēia holomua i ka pilikia o ka honua holoʻokoʻa o ka mālama ʻana i ka ʻili wafer silicon carbide nui-diameter, e hoʻomaʻemaʻe ana i nā pilikia no ka ulu ʻana o ka epitaxial kiʻekiʻe.
4. Hana Hoʻokele Wela: Ma nā noi hana, hōʻike nā substrates SiC 12-'īniha i nā hiki ke hoʻoheheʻe wela kupaianaha. Hōʻike ka ʻikepili hoʻāʻo ma lalo o ka mana like, hana nā mea hana e hoʻohana ana i nā substrates 12-'īniha i nā mahana 40-50°C haʻahaʻa ma mua o nā mea hana silicon-based, e hoʻolōʻihi nui ana i ke ola lawelawe o nā lako.

Nā Noi Nui

1. ʻŌnaehana Kaʻa Ikehu Hou: Ke hoʻololi nei ka substrate SiC 12-'īniha (12-'īniha silicon carbide substrate) i ka hoʻolālā powertrain kaʻa uila. Mai nā mea hoʻoili uila (OBC) a i nā inverters hoʻokele nui a me nā ʻōnaehana hoʻokele pila, ʻo nā hoʻomaikaʻi pono i lawe ʻia e nā substrates 12-'īniha e hoʻonui i ka laulā o ke kaʻa ma 5-8%. Hōʻike nā hōʻike mai kahi mea hana kaʻa alakaʻi i ka hoʻohana ʻana i kā mākou substrates 12-'īniha i hōʻemi i ka nalowale o ka ikehu i kā lākou ʻōnaehana hoʻouka wikiwiki ma kahi 62% kupaianaha.
2. ʻĀpana Ikehu Hou: Ma nā kikowaena mana photovoltaic, ʻo nā inverters e pili ana i nā substrates SiC 12-'īniha ʻaʻole wale nō e hōʻike i nā kumu ʻano liʻiliʻi akā hoʻokō pū i ka pono hoʻololi ma mua o 99%. ʻOi loa i nā hiʻohiʻona hanauna i hoʻolaha ʻia, unuhi ʻia kēia pono kiʻekiʻe i ka mālama makahiki o nā haneli haneli o yuan i nā pohō uila no nā mea hoʻohana.
3. ʻOihana Hana: Hōʻike nā mea hoʻololi alapine (frequency converters) e hoʻohana ana i nā substrates 12-'īniha i ka hana maikaʻi loa i nā robots ʻoihana, nā mea hana mīkini CNC, a me nā lako ʻē aʻe. Hoʻomaikaʻi kā lākou mau ʻano hoʻololi alapine kiʻekiʻe i ka wikiwiki o ka pane ʻana o ka mīkini ma 30% me ka hoʻemi ʻana i ka hoʻopilikia electromagnetic i hoʻokahi hapakolu o nā hoʻonā maʻamau.
4. Hana Hou o nā Mea Kūʻai Uila: Ua hoʻomaka nā ʻenehana hoʻouka wikiwiki o nā kelepona akamai o ka hanauna e hiki mai ana e hoʻohana i nā substrates SiC 12-'īniha. Ua manaʻo ʻia e hoʻololi piha nā huahana hoʻouka wikiwiki ma luna o 65W i nā hopena silicon carbide, me nā substrates 12-'īniha e kū mai ana ma ke ʻano he koho kūpono loa no ka hana kumukūʻai.

Nā lawelawe i hoʻopilikino ʻia ʻo XKH no ka Substrate SiC 12-'īniha

No ka hoʻokō ʻana i nā koi kikoʻī no nā substrates SiC 12-'īniha (nā substrates silicon carbide 12-'īniha), hāʻawi ʻo XKH i ke kākoʻo lawelawe piha:
1. Hoʻopilikino ʻana o ka mānoanoa:
Hāʻawi mākou i nā substrates 12-'īniha i nā kikoʻī mānoanoa like ʻole me 725μm e hoʻokō i nā pono noi like ʻole.
2. Hoʻohuihui Doping:
Kākoʻo kā mākou hana ʻana i nā ʻano conductivity he nui e komo pū ana me nā substrates ʻano-n a me ke ʻano-p, me ka kaohi resistivity pololei ma ka pae o 0.01-0.02Ω·cm.
3. Nā lawelawe hoʻāʻo:
Me nā lako hoʻāʻo pae wafer piha, hāʻawi mākou i nā hōʻike nānā piha.
Hoʻomaopopo ʻo XKH he mau koi kūikawā ko kēlā me kēia mea kūʻai aku no nā substrates SiC 12-'īniha. No laila, hāʻawi mākou i nā hiʻohiʻona hana like ʻoihana maʻalahi e hāʻawi i nā hopena hoʻokūkū loa, inā paha no:
· Nā laʻana R&D
· Nā kūʻai hana nui
Hoʻomaopopo kā mākou lawelawe i hana ʻia e hiki iā mākou ke hoʻokō i kāu mau pono loea a me ka hana ʻana no nā substrates SiC 12-ʻīniha.