12 ʻīniha SiC Substrate N ʻAno Nui Nui Nā noi RF hana kiʻekiʻe

12 ʻīniha SiC Substrate N ʻAno Nui Nui Nui Hana Kiʻekiʻe Nā noi RF Hōʻike ʻia

ʻO ka wehewehe pōkole:

Hōʻike ka substrate 12-inch SiC i kahi holomua holomua i ka ʻenehana semiconductor material, e hāʻawi ana i nā pono hoʻololi no ka uila uila a me nā noi kiʻekiʻe. ʻOiai ʻo ka ʻoihana nui loa o ka ʻoihana silicon carbide wafer format, ʻo ka 12-inch SiC substrate e hiki ai i nā ʻoihana waiwai ʻole o ka unahi ʻoiai e mālama ana i nā pono kūlohelohe o nā ʻano bandgap ākea a me nā waiwai wela. Hoʻohālikelike ʻia i nā wafers SiC 6-ʻīniha a i ʻole liʻiliʻi liʻiliʻi, hāʻawi ka paepae 12-inch ma luna o 300% ʻoi aku ka nui o nā wahi hoʻohana i kēlā me kēia wafer, e hoʻonui nui ana i ka hua make a hōʻemi i nā kumukūʻai hana no nā mea mana. Hōʻike kēia hoʻololi nui i ka hoʻololi o ka mōʻaukala o nā wafer silika, kahi i hoʻonui ai kēlā me kēia anawaena i nā hōʻemi nui a me ka hoʻomaikaʻi ʻana i ka hana. ʻO ka 12-inch SiC substrate's superior thermal conductivity (kokoke i ka 3x that of silicon) a me ke kiʻekiʻe koʻikoʻi breakdown kahua ikaika e waiwai nui ia no ka hanauna hou 800V pūnaewele kaʻa uila, kahi e hiki ai i nā modula mana paʻa a maikaʻi. Ma ka hana 5G, ʻo ka wikiwiki saturation electron kiʻekiʻe o ka mea e hiki ai i nā polokalamu RF ke hana i nā alapine kiʻekiʻe me nā poho haʻahaʻa. ʻO ka hoʻohālikelike ʻana o ka substrate me nā mea hana hana silika i hoʻololi ʻia e hoʻomaʻamaʻa maʻalahi i ka hoʻohana ʻana e nā fabs i loaʻa, ʻoiai ke koi ʻia ka lawelawe kūikawā ma muli o ka paʻakikī loa o SiC (9.5 Mohs). Ke hoʻonui nei ka nui o ka hana, ua manaʻo ʻia ka 12-inch SiC substrate e lilo i ka maʻamau o ka ʻoihana no nā noi mana kiʻekiʻe, e hoʻokau i ka hana hou ma waena o ka automotive, ikehu hou, a me nā ʻōnaehana hoʻololi mana ʻoihana.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Nā palena ʻenehana

12 iniha Silicon Carbide (SiC) Substrate Specification
Papa		ZeroMPD Production Papa(Z Papa)	Hana maʻamau Papa(P)		Papa Dummy (Ka Papa D)
Anawaena		3 0 0 mm~1305mm
mānoanoa	4H-N	750μm±15 μm	750μm±25μm
	4H-SI	750μm±15 μm	750μm±25μm
Kūlana Wafer		Koi aku: 4.0° i <1120 >±0.5° no 4H-N, Ma ke axis: <0001>±0.5° no 4H-SI
Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kū'ē	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Kūlana Pāha mua		{10-10} ±5.0°
Ka lōʻihi pālahalaha	4H-N	N/A
	4H-SI	Notch
Hoʻokuʻu Edge		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
ʻoʻoleʻa		Polani Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe Nā Papa Hex Ma ka Māmā Kiʻekiʻe Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe Hoʻokomo ʻia ʻo Carbon Visual ʻO ka ʻili o ka ʻili silikoni e ka māmā ikaika loa		ʻAʻohe ʻĀpana hui ≤0.05% ʻAʻohe ʻĀpana hui ≤0.05% ʻAʻohe			Huina lōʻihi ≤ 20 mm, hoʻokahi lōʻihi≤2 mm ʻĀpana hui ≤0.1% ʻĀpana huila≤3% ʻĀpana hui ≤3% Hoʻohui lōʻihi≤1×wafer anawaena
Nā Kiʻi Kiʻi Ma ka Māmā Kiʻekiʻe		ʻAʻohe ʻae ʻia ≥0.2mm laula a me ka hohonu			7 ʻae ʻia, ≤1 mm kēlā me kēia
(TSD) Wehewehe ʻia ka wiliwili wiliwili		≤500 knm-2		N/A
(BPD) Wehewehe kahua mokulele		≤1000 knm-2		N/A
ʻO ka hoʻohaumia ʻana i ka ʻili o ka Silicon e ka māmā ikaika kiʻekiʻe		ʻAʻohe
Hoʻopili ʻana		ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi
Nā memo:
1 Pili nā palena hemahema i ka ʻili wafer holoʻokoʻa koe wale nō ka wahi i kāpae ʻia. 2 Pono e nānā ʻia nā ʻōpala ma ka maka Si wale nō. 3 ʻO ka ʻikepili dislocation mai nā wafers i kālai ʻia KOH wale nō.

Nā mea nui

1. Nui Nui Pōmaikaʻi: ʻO ka 12-inch SiC substrate (12-inch silicon carbide substrate) ke hāʻawi aku i kahi ʻāpana wafer hoʻokahi, e hiki ai ke hoʻonui ʻia nā chips i kēlā me kēia wafer, a laila e hōʻemi ana i nā kumukūʻai hana a hoʻonui i ka hua.
2. Mea Hana Hana Kiʻekiʻe: ʻO ke kūpaʻa wela kiʻekiʻe o ka Silicon carbide a me ka ikaika o ka māla hoʻohaʻahaʻa kiʻekiʻe e hana i ka substrate 12-inch i kūpono no nā noi kiʻekiʻe-voltage a me nā alapine kiʻekiʻe, e like me nā EV inverters a me nā ʻōnaehana wikiwiki.
3. Hoʻoponopono Hoʻoponopono: ʻOiai ke kiʻekiʻe o ka paʻakikī a me ka hoʻoponopono ʻana i nā pilikia o SiC, hiki i ka 12-inch SiC substrate ke hoʻokō i nā hemahema o lalo ma o nā ʻenehana ʻokiʻoki a me ka hoʻoliʻi ʻana, e hoʻomaikaʻi ana i ka hua o ka mīkini.
4. ʻO ka hoʻokele wela kiʻekiʻe: Me ka maikaʻi o ka wela wela ma mua o nā mea i hoʻokumu ʻia i ka silicon, ʻo ka substrate 12-inch e hoʻoponopono pono i ka hoʻopau ʻana i ka wela i nā mea mana kiʻekiʻe, e hoʻolōʻihi i ke ola o nā lako.

Nā noi nui

1. Nā Kaʻa Uila: ʻO ka 12-inch SiC substrate (12-inch silicon carbide substrate) he mea koʻikoʻi o nā ʻōnaehana hoʻokele uila o ka hanauna e hiki mai ana, e hiki ai i nā mea hoʻohuli kiʻekiʻe e hoʻonui i ka laulā a hoʻemi i ka manawa hoʻouka.

2. Nā Kūlana Kūlana 5G: Kākoʻo nā substrate SiC nui nui i nā polokalamu RF kiʻekiʻe, e hoʻokō i nā koi o nā kahua kahua 5G no ka mana kiʻekiʻe a me ka pohō haʻahaʻa.

3.Industrial Power Supplies: I nā mea hoʻohuli o ka lā a me nā grids akamai, hiki i ka substrate 12-inihi ke kū i nā voltage kiʻekiʻe me ka hoʻemi ʻana i ka nalowale o ka ikehu.

4. Consumer Electronics: Hiki i nā loina wikiwiki a me nā lako mana kikowaena data ke hoʻohana i nā substrates 12-inch SiC no ka hoʻokō ʻana i ka nui compact a me ka ʻoi aku ka maikaʻi.

Nā lawelawe a XKH

Hoʻolaha mākou i nā lawelawe hoʻoponopono maʻamau no nā substrates 12-inch SiC (12-inch silicon carbide substrates), me:
1. Dicing & Polishing: Haʻahaʻa-hōʻino, kiʻekiʻe-flatness substrate kaʻina hana i kūpono i nā koi o ka mea kūʻai aku, e hōʻoiaʻiʻo ana i ka hana paʻa.
2. Kākoʻo Epitaxial Growth: ʻO nā lawelawe wafer epitaxial kiʻekiʻe e hoʻolalelale i ka hana chip.
3. Hoʻopiʻi liʻiliʻi-Batch Prototyping: Kākoʻo i ka hōʻoia R&D no nā keʻena noiʻi a me nā ʻoihana, e hoʻopōkole i nā pōʻai hoʻomohala.
4. Kūkākūkā Kūkākūkā: Nā hopena hope loa mai ke koho ʻana i nā mea a hiki i ka hoʻoponopono ʻana i ka loiloi, e kōkua ana i nā mea kūʻai aku e lanakila i nā pilikia hoʻoponopono SiC.
Inā no ka hana nui a i ʻole ka hana maʻamau, ʻo kā mākou 12-inch SiC substrate lawelawe e kūlike me kāu mau pono papahana, e hoʻoikaika ana i ka holomua ʻenehana.