Nā noi RF hana kiʻekiʻe 12 ʻīniha SiC Substrate N Type Nui

12 ʻīniha SiC Substrate N Type Nui Nui Hana Kiʻekiʻe RF Nā Hana i Hōʻike ʻia Kiʻi

Wehewehe Pōkole:

ʻO ka substrate SiC 12-'īniha e hōʻike ana i kahi holomua hou i ka ʻenehana mea semiconductor, e hāʻawi ana i nā pono hoʻololi no nā mea uila mana a me nā noi alapine kiʻekiʻe. Ma ke ʻano he ʻano wafer silicon carbide nui loa i loaʻa ma ke kālepa, hiki i ka substrate SiC 12-'īniha ke hoʻokele waiwai i ʻike ʻole ʻia me ka mālama ʻana i nā pono kūlohelohe o nā mea o nā ʻano bandgap ākea a me nā waiwai thermal kūikawā. Ke hoʻohālikelike ʻia me nā wafers SiC maʻamau 6-'īniha a liʻiliʻi paha, hāʻawi ka paepae 12-'īniha ma mua o 300% wahi hiki ke hoʻohana ʻia no kēlā me kēia wafer, e hoʻonui nui ana i ka hua make a hoʻemi i nā kumukūʻai hana no nā mea mana. Hōʻike kēia hoʻololi nui i ka ulu ʻana o ka mōʻaukala o nā wafers silicon, kahi i lawe mai ai kēlā me kēia piʻi ʻana o ke anawaena i nā hōʻemi kumukūʻai nui a me nā hoʻomaikaʻi hana. ʻO ka conductivity thermal kiʻekiʻe o ka substrate SiC 12-'īniha (ʻaneʻane 3 × o ka silicon) a me ka ikaika o ke kahua haki koʻikoʻi kiʻekiʻe e lilo ia i mea waiwai nui no nā ʻōnaehana kaʻa uila 800V hanauna e hiki mai ana, kahi e hiki ai i nā modula mana ʻoi aku ka liʻiliʻi a me ka maikaʻi. I loko o ke kahua 5G, ʻo ka wikiwiki saturation electron kiʻekiʻe o ka mea e hiki ai i nā mea RF ke hana ma nā alapine kiʻekiʻe me nā pohō haʻahaʻa. ʻO ke kūlike o ka substrate me nā lako hana silicon i hoʻololi ʻia e kōkua pū i ka hoʻohana maʻalahi ʻia e nā fabs e kū nei, ʻoiai pono ka lawelawe kūikawā ma muli o ka paʻakikī loa o SiC (9.5 Mohs). I ka piʻi ʻana o ka nui o ka hana ʻana, manaʻo ʻia ka substrate SiC 12-'īniha e lilo i kūlana ʻoihana no nā noi mana kiʻekiʻe, e hoʻokele ana i ka hana hou ma waena o nā kaʻa, ka ikehu hou, a me nā ʻōnaehana hoʻololi mana ʻoihana.

E leka uila mai iā mākou

Nā hiʻohiʻona

Nā palena loea

ʻO ke kikoʻī o ka substrate Silicon Carbide (SiC) 12 ʻīniha
Papa		Hana ʻana o ZeroMPD Papa (Papa Z)	Hana Maʻamau Papa (Papa P)		Papa Dummy (Papa D)
Anawaena		3 0 0 mm~1305mm
Mānoanoa	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Hoʻonohonoho Wafer		ʻO ke axis ma waho: 4.0° i ka ʻaoʻao <1120 >±0.5° no 4H-N, Ma ke axis: <0001>±0.5° no 4H-SI
Ka nui o ka micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ke kū'ē ʻana	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Kūlana Pālahalaha Mua		{10-10} ±5.0°
Ka Lōʻihi Palahalaha Mua	4H-N	ʻAʻohe
	4H-SI	ʻOki
Hoʻokaʻawale ʻana i ka lihi		3 mm
LTV/TTV/Kakaka/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
ʻOʻoleʻa		Polani Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe Nā Hoʻokomo Kalapona ʻIke Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe		ʻAʻohe ʻĀpana hōʻuluʻulu ≤0.05% ʻAʻohe ʻĀpana hōʻuluʻulu ≤0.05% ʻAʻohe			Ka lōʻihi hui ≤ 20 mm, ka lōʻihi hoʻokahi ≤2 mm ʻĀpana hōʻuluʻulu ≤0.1% ʻĀpana hōʻuluʻulu ≤3% ʻĀpana hōʻuluʻulu ≤3% Ka lōʻihi huina ≤1 × ke anawaena wafer
Nā ʻāpana lihi e ka mālamalama ikaika kiʻekiʻe		ʻAʻohe mea i ʻae ʻia ≥0.2mm ka laulā a me ka hohonu			7 i ʻae ʻia, ≤1 mm kēlā me kēia
(TSD) Hoʻoneʻe ʻana i ka wili wili		≤500 kenimika-2		ʻAʻohe
(BPD) Ka neʻe ʻana o ka mokulele kumu		≤1000 kenimika-2		ʻAʻohe
Ka haumia ʻana o ka ʻili Silicon e ka mālamalama ikaika kiʻekiʻe		ʻAʻohe
Ka hoʻopili ʻana		Kaseta Wafer Multi-wafer a i ʻole ka ipu Wafer hoʻokahi
Nā memo:
1 Pili nā palena kīnā i ka ʻili wafer holoʻokoʻa koe wale nō ka ʻāpana hoʻokoe lihi. Pono e nānā ʻia nā ʻōpala ma ka maka Si wale nō. 3 Mai nā wafers i kālai ʻia ʻo KOH wale nō ka ʻikepili dislocation.

Nā Hiʻohiʻona Koʻikoʻi

1. Pōmaikaʻi Nui: Hāʻawi ka substrate SiC 12-'īniha (12-'īniha silicon carbide substrate) i kahi wahi wafer hoʻokahi nui aʻe, e hiki ai ke hana ʻia nā ʻāpana he nui aʻe no kēlā me kēia wafer, a laila e hōʻemi ana i nā kumukūʻai hana a hoʻonui i ka hua.
2. Mea Hana Kiʻekiʻe: ʻO ke kūpaʻa wela kiʻekiʻe o ka Silicon carbide a me ka ikaika o ke kahua haki kiʻekiʻe e hoʻolilo i ka substrate 12-'īniha i kūpono no nā noi voltage kiʻekiʻe a me ke alapine kiʻekiʻe, e like me nā inverters EV a me nā ʻōnaehana hoʻouka wikiwiki.
3. Hoʻohālikelike Hana: ʻOiai ke kiʻekiʻe o ka paʻakikī a me nā pilikia hana o SiC, hoʻokō ka substrate SiC 12-'īniha i nā hemahema ʻili haʻahaʻa ma o nā ʻano ʻoki a me ka polishing i hoʻomaikaʻi ʻia, e hoʻomaikaʻi ana i ka hua o ka hāmeʻa.
4. Hoʻokele Wela Kiʻekiʻe: Me ka conductivity thermal ʻoi aku ka maikaʻi ma mua o nā mea silicon-based, hoʻoponopono pono ka substrate 12-'īniha i ka hoʻolaha wela i nā mea hana mana kiʻekiʻe, e hoʻolōʻihi ana i ke ola o nā lako.

Nā Noi Nui

1. Nā Kaʻa Uila: ʻO ka substrate SiC 12-'īniha (12-'īniha silicon carbide substrate) kahi ʻāpana koʻikoʻi o nā ʻōnaehana hoʻokele uila hanauna hou, e hiki ai i nā inverters kiʻekiʻe-kūpono e hoʻonui i ka laulā a hoʻemi i ka manawa hoʻouka.

2. Nā Kikowaena Kumu 5G: Kākoʻo nā substrates SiC nui i nā polokalamu RF alapine kiʻekiʻe, e hoʻokō ana i nā koi o nā kikowaena kumu 5G no ka mana kiʻekiʻe a me ka pohō haʻahaʻa.

3. Nā Lako Mana ʻOihana: I loko o nā inverters solar a me nā grids akamai, hiki i ka substrate 12-'īniha ke kū i nā voltages kiʻekiʻe aʻe me ka hoʻemi ʻana i ka pohō ikehu.

4. Nā Mea Uila Kūʻai: Hiki i nā mea hoʻoili wikiwiki e hiki mai ana a me nā lako mana kikowaena ʻikepili ke hoʻohana i nā substrates SiC 12-'īniha e hoʻokō ai i ka nui liʻiliʻi a me ka pono kiʻekiʻe.

Nā lawelawe a XKH

He loea mākou i nā lawelawe hana i hoʻopilikino ʻia no nā substrates SiC 12-'īniha (nā substrates silicon carbide 12-'īniha), me:
1. ʻOki ʻoki a me ka poli ʻana: Hana ʻana i ka substrate haʻahaʻa-pōʻino, pālahalaha kiʻekiʻe i hoʻopilikino ʻia i nā koi o ka mea kūʻai aku, e hōʻoiaʻiʻo ana i ka hana paʻa o ka hāmeʻa.
2. Kākoʻo ulu ʻana o Epitaxial: Nā lawelawe wafer epitaxial kiʻekiʻe e hoʻolalelale i ka hana ʻana o nā ʻāpana.
3. Hoʻohālikelike Pūʻulu Liʻiliʻi: Kākoʻo i ka hōʻoia R&D no nā ʻoihana noiʻi a me nā ʻoihana, e hoʻopōkole ana i nā pōʻaiapuni hoʻomohala.
4. Kūkākūkā ʻenehana: Nā hoʻonā hoʻopau-a-hopena mai ke koho ʻana i nā mea a hiki i ka hoʻonui ʻana i ke kaʻina hana, e kōkua ana i nā mea kūʻai aku e lanakila i nā pilikia hana SiC.
Inā no ka hana nui ʻana a i ʻole ka hoʻopilikino kūikawā ʻana, kūlike kā mākou lawelawe substrate SiC 12-ʻīniha me kāu mau pono papahana, e hoʻoikaika ana i nā holomua ʻenehana.