12 'īniha SIC substrate silicon carbide papa nui anawaena 300mm nui nui 4H-N Kūpono no ka mea mana kiʻekiʻe ka hoʻoheheʻe wela.

12 'īniha SIC substrate silicon carbide papa nui anawaena 300mm nui nui 4H-N Kūpono no ka mea mana kiʻekiʻe ka hoʻoheheʻe ʻana i ka wela.

ʻO ka wehewehe pōkole:

ʻO kahi 12-inch silicon carbide substrate (SiC substrate) he nui-nui, kiʻekiʻe-hana semiconductor mea substrate i hana ʻia mai kahi aniani hoʻokahi o ka silicon carbide. ʻO ka Silicon carbide (SiC) kahi mea semiconductor ākea ākea me nā mea uila maikaʻi loa, wela a me nā waiwai mechanical, i hoʻohana nui ʻia i ka hana ʻana i nā mea uila i ka mana kiʻekiʻe, kiʻekiʻe kiʻekiʻe a me nā wahi wela kiʻekiʻe. ʻO ka substrate 12-inihi (300mm) ka mea kikoʻī kiʻekiʻe o kēia manawa o ka ʻenehana silicon carbide, hiki ke hoʻomaikaʻi nui i ka hana hana a hoʻemi i nā kumukūʻai.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Nā hiʻohiʻona huahana

1. High thermal conductivity: ka thermal conductivity o silicon carbide ua oi aku mamua o 3 manawa o ke kilika, i kūpono no ka mana kiʻekiʻe manaʻo wela dissipation.

2. Kiʻekiʻe breakdown kahua ikaika: Ka breakdown kahua ikaika he 10 manawa o ka silicon, kūpono no kiʻekiʻe-press noi.

3.Wide bandgap: ʻO ka bandgap ʻo 3.26eV (4H-SiC), kūpono no ka kiʻekiʻe kiʻekiʻe a me nā noi pinepine.

4. ʻO ka paʻakikī kiʻekiʻe: ʻO ka paʻakikī Mohs he 9.2, ka lua wale nō i ke daimana, ke kūpaʻa maikaʻi loa a me ka ikaika mechanical.

5. Paʻa kemika: ke kūpaʻa corrosion ikaika, ka hana paʻa i ka wela kiʻekiʻe a me ke ʻano paʻakikī.

6. Nui nui: 12 iniha (300mm) substrate, hoʻomaikaʻi i ka hana pono, hoʻemi i ke kumu kūʻai.

7.Low defect density: high quality single crystal growth technology e hōʻoia i ka haʻahaʻa defect density a me ke kūlana kiʻekiʻe.

Product kuhikuhi noi nui

1. Mea uila uila:

Mosfets: Hoʻohana ʻia i nā kaʻa uila, nā kaʻa kaʻa ʻenehana a me nā mea hoʻololi mana.

Diodes: e like me Schottky diodes (SBD), hoʻohana ʻia no ka hoʻoponopono kūpono a me ka hoʻololi ʻana i nā lako mana.

2. Nā mea hana Rf:

Rf mana hoʻonui: hoʻohana ʻia i nā kikowaena kumu kamaʻilio 5G a me nā kamaʻilio ukali.

Nā lako microwave: He kūpono no ka radar a me nā ʻōnaehana kamaʻilio uila.

3. Nā kaʻa ikehu hou:

Nā ʻōnaehana hoʻokele uila: nā mea hoʻokele kaʻa a me nā mea hoʻohuli no nā kaʻa uila.

Puʻu hoʻouka: Module mana no nā lako hoʻouka wikiwiki.

4. Nā noi ʻoihana:

Mea hoʻohuli uila kiʻekiʻe: no ka hoʻokele kaʻa ʻoihana a me ka hoʻokele ikehu.

Mākaukau akamai: No ka hoʻoili HVDC a me nā mea hoʻololi uila uila.

5. Aerospace:

Mea uila wela kiʻekiʻe: kūpono i nā kaiapuni wela kiʻekiʻe o nā lako aerospace.

6. Kahua noiʻi:

Ka noiʻi semiconductor bandgap ākea: no ka hoʻomohala ʻana i nā mea semiconductor hou a me nā mea hana.

ʻO ka 12-inch silicon carbide substrate he ʻano o ka semiconductor material substrate kiʻekiʻe me nā waiwai maikaʻi loa e like me ke kiʻekiʻe thermal conductivity, kiʻekiʻe breakdown kahua ikaika a me ka laulā ākea. Hoʻohana nui ʻia ia i ka uila uila, nā mīkini lekiō, nā kaʻa ikehu hou, ka mana ʻoihana a me ka aerospace, a he mea nui ia e hāpai i ka hoʻomohala ʻana o ka hanauna e hiki mai ana o nā mea uila uila kūpono a kiʻekiʻe.

ʻOiai ʻoi aku ka liʻiliʻi o nā mea hoʻohana pololei i nā mea hoʻohana uila e like me nā aniani AR, hiki i ko lākou hiki i ka hoʻokele mana maikaʻi a me nā mea uila liʻiliʻi ke kākoʻo i nā hāmeʻa hāʻawi mana kiʻekiʻe no nā mea AR/VR e hiki mai ana. I kēia manawa, ʻo ka hoʻomohala nui ʻana o ka silicon carbide substrate i hoʻopaʻa ʻia i nā ʻoihana ʻoihana e like me nā kaʻa ikehu hou, ka ʻenehana kamaʻilio a me ka automation ʻoihana, a hoʻolaha i ka ʻoihana semiconductor e hoʻomohala i kahi ʻoi aku ka maikaʻi a hilinaʻi.

Ua paʻa ʻo XKH i ka hoʻolako ʻana i nā substrates 12 "SIC kiʻekiʻe me ke kākoʻo ʻenehana piha a me nā lawelawe, me:

1. Hoʻopilikino hana: E like me ka mea kūʻai mai pono e hoʻolako okoa resistivity, kristal orientation a me ka ili lapaau substrate.

2. Ka hoʻoponopono ʻana i ke kaʻina hana: Hāʻawi i nā mea kūʻai aku me ke kākoʻo ʻenehana o ka ulu ʻana o ka epitaxial, ka hana ʻana i nā mea hana a me nā kaʻina hana ʻē aʻe e hoʻomaikaʻi ai i ka hana huahana.

3. Ka ho'āʻo a me ka hōʻoia: E hoʻolako i kaʻike kīnā koʻikoʻi a me ka hōʻoia maikaʻi e hōʻoia i ka hoʻokōʻana o ka substrate i nā kūlana o kaʻoihana.

4. R&d hui pū: Hoʻomohala hui i nā mea hana silika carbide hou me nā mea kūʻai aku e hāpai i ka ʻenehana ʻenehana.

pakuhi ʻikepili

1 2 iniha Silicon Carbide (SiC) Substrate Specification
Papa		ZeroMPD Production Papa(Z Papa)	Hana maʻamau Papa(P)		Papa Dummy (Ka Papa D)
Anawaena		3 0 0 mm~305mm
mānoanoa	4H-N	750μm±15 μm	750μm±25μm
	4H-SI	750μm±15 μm	750μm±25μm
Kūlana Wafer		Koi aku: 4.0° i <1120 >±0.5° no 4H-N, Ma ke axis: <0001>±0.5° no 4H-SI
Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kū'ē	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Kūlana Pāha mua		{10-10} ±5.0°
Ka lōʻihi pālahalaha	4H-N	N/A
	4H-SI	Notch
Hoʻokuʻu Edge		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
ʻoʻoleʻa		Polani Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe Nā Papa Hex Ma ka Māmā Kiʻekiʻe Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe Hoʻokomo ʻia ʻo Carbon Visual ʻO ka ʻili o ka ʻili silikoni e ka māmā ikaika loa		ʻAʻohe ʻĀpana hui ≤0.05% ʻAʻohe ʻĀpana hui ≤0.05% ʻAʻohe			Huina lōʻihi ≤ 20 mm, hoʻokahi lōʻihi≤2 mm ʻĀpana hui ≤0.1% ʻĀpana huila≤3% ʻĀpana hui ≤3% Hoʻohui lōʻihi≤1×wafer anawaena
Nā Kiʻi Kiʻi Ma ka Māmā Kiʻekiʻe		ʻAʻohe ʻae ʻia ≥0.2mm laula a me ka hohonu			7 ʻae ʻia, ≤1 mm kēlā me kēia
(TSD) Wehewehe ʻia ka wiliwili wiliwili		≤500 knm-2		N/A
(BPD) Wehewehe kahua mokulele		≤1000 knm-2		N/A
ʻO ka hoʻohaumia ʻana i ka ʻili o ka Silicon e ka māmā ikaika kiʻekiʻe		ʻAʻohe
Hoʻopili ʻana		ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi
Nā memo:
1 Pili nā palena hemahema i ka ʻili wafer holoʻokoʻa koe wale nō ka wahi i kāpae ʻia. 2 Pono e nānā ʻia nā ʻōpala ma ka maka Si wale nō. 3 ʻO ka ʻikepili dislocation mai nā wafers i kālai ʻia KOH wale nō.

E hoʻomau ʻo XKH i ka hoʻopukapuka ʻana i ka noiʻi a me ka hoʻomohala ʻana no ka hoʻolaha ʻana i ka holomua o 12-inch silicon carbide substrates i ka nui nui, nā hemahema haʻahaʻa a me ke kūpaʻa kiʻekiʻe, ʻoiai ʻo XKH e ʻimi i kāna mau noi ma nā wahi e puka mai ana e like me nā mea uila uila (e like me nā modula mana no nā mea AR / VR) a me ka computing quantum. Ma ka hōʻemi ʻana i nā kumukūʻai a me ka hoʻonui ʻana i ka hiki, e lawe mai ʻo XKH i ka pōmaikaʻi i ka ʻoihana semiconductor.