12 Inch Sc Spedrate Silipe Silmide Pricage Pricage Pride Bride Primage 300mm nui nui o ka nui 4h-n i kūpono no ka mana wela

12 Inch Sc Substrate Pricage Silipe Silipe Silme 100mm nunui nui 4h-n kūpono no ka nui o ka mana o ka mana

Kākau pōkole:

ʻO ka 12-inch silika silika silika sticide subside subbide (sic substrate) he nui nui, kiʻekiʻe semicornductor i hanaʻia mai kahi crystal ʻO Silicon Carbide (SIC) he hui nui o ka hui semicohondsuctor me nā mea e pono ai nā mea uila a me nā mīkini kiʻekiʻe. ʻO ka helu 12-iniha (300mm) ka mea kiko'ī o kēia manawa ma kaʻenehana loea Silikino, nāna e hiki i ka hoʻomaikaʻiʻiaʻana i ka hana hana.

Hoʻouna i ka leka uila iā mākou

Huahana kikoʻipiop

Nā Kūlana Huakaʻi

Mau hiʻohiʻona mau huahana

1.ʻO keʻano o ka Thermal kiʻekiʻe

2.ʻO ka ikaika kiʻekiʻe o ke kula kiʻekiʻe:ʻo ka ikaika o ka pale ahi he 10 mau manawa o Silicon, kūpono no nā noi kiʻekiʻe.

3.Wide bandgap:ʻO ka bandgap he 3.26ev (4h-sic), kūpono no nā noi kiʻekiʻe a me nā noi kiʻekiʻe.

4.ʻO ka paʻakikī paʻakikī

6.ʻO ka nui nui: 12 Inch (300mm) substrate, hoʻomaikaʻi i ka hana hana hana, hoʻemi i ka uku waihona.

7.We Defect density

ʻO ke kuhikuhi palapala noi nui

1.ʻO nā leka uila:

Nā Mokuna: Hoʻohanaʻia ma nā kaʻa uila, nā kaʻa kaʻa kaʻa a me nā mea e hoʻohuli.

DIDEDES: E like me nā mea e like me Scitoky

2, nā polokalamu RF:

RF Power Amplifier: Hoʻohanaʻia i nā kahua o 5G e pili ana i nā kahua hana o 5G a me nā kelepona kelepona.

Nā Kūlana Microwave: kūpono no Radar a me nā'ōnaehana kamaʻilio kelepona.

3. Nā kaʻa kiʻi hou:

Nā'ōnaehana hoʻokele uila

ʻO ka hoʻopiliʻana i ka pile: module module no nā mea kūʻai wikiwiki wikiwiki.

ʻO nā mea hoʻohālikelike kiʻekiʻe: no ka hoʻokele kaʻa kaʻa a me ka hoʻokele waiwai.

Smart Grid: No ka hoʻounaʻana i nā leka uila leka uila HVDC.

5. Aerospace:

ʻO nā koho koho kiʻekiʻe: He kūpono no nā kikowaena kiʻekiʻe o nā pono o Aerospace

ʻO ka noiʻiʻana o ka Bandgap Semiconductor: No ka hoʻomohalaʻana o nā mea Semiconductor hou a me nā polokalamu.

ʻO ka helu pīkī 12-inihaʻo 12-inch substrate heʻano mea kiʻekiʻe semicohond Ua hoʻohana nuiʻia ia ma Power Electronics, nā mīkiniʻoniʻoni hou, nā kaʻaʻoihana hou, aʻo ka mea nui e hoʻolauleʻa ai i ke kūkuluʻana i nā mea hou a me ka nui o nā hana uila.

ʻOiaiʻo Silicon Carbide e loaʻa i nā noi liʻiliʻi i kēia manawa i nā leka uila e like me nā mea e pono ai ka mana o ka mana. I kēia manawa,ʻo ka hoʻomohala nui o ka sticide subteki a me nā'ōnaehanaʻoihana me kaʻikeʻoi aku ka maikaʻi.

Ua hanaʻiaʻo XKH i ka hāʻawiʻana i ke kiʻekiʻe kiʻekiʻe 12 "SICC PERSRABRATRATER me ke kākoʻoʻana i ke kākoʻoʻana a me nā lawelawe, me nā lawelawe:

1. Hanaʻia ka hana maʻamau: E like me ka mea kūʻai aku e pono e hoʻolako i nā pale'ē aʻe, crystal orientation a me nā wahi mālama kino.

2. Hana i ka hoʻolālā: hoʻolako i nā mea kūʻai aku me ke kākoʻoʻana i ke kākoʻo o ka Epitaxial, kahi hana hana e hoʻomaikaʻi ai i ka hana huahana.

4.R & D Coopite: E hoʻomohala i nā mea hana Silipila kiʻi kiʻi hou me nā mea kūʻai aku e hoʻolauleʻa ai i nā mea hanaʻenehana.

Nā'Āina Kaʻikepili

1 2 ITCH Silcon Carbide (SIC) SITCESTER SITET
Kumu		ʻO ZeMUMPD KĀNUI Papa (Z SPRES)	ʻO ka hana hoʻolālā Kahi (P makaukau)		Kahi helu Dummy (D papa)
Olemela		3 0 0 mm ~ 1305mm
Kohano	4h-n	750μm ± 15 μM	750μm ± 25 μm
	4h-S	750μm ± 15 μM	750μm ± 25 μm
ʻO ka mea hoʻokele kālā		Axis Axis: 4.0 ° I <1120> ± 0.2
Micropipe denirity	4h-n	≤0.4cm-2	Ç4cm-2		Ç25cm-2
	4h-S	Ç5c-2	≤4cm-2		Ç25cm-2
Pale o ka pale	4h-n	0.015 1 0.024 · cm			0.015 ~ 0 0.028 · CM
	4h-S	≥1e10 ω · cm			≥e5 ω · cm
ʻO keʻano mua		{10-10} 50 °
ʻO ka lōʻihi lōʻihi	4h-n	N / a
	4h-S	Notch
Kūwaho		3 mm
LTV / TTV / kakaka / Warp		Ç56 / ≤156μm / ≤35 μm / ç55 μm55 μm			Ç56 / ≤15 e ≤3_ μM / ≤m5 μ
Huahua		Polii Host randE1 NM
		Cm h≤жж ra0.2 nm			Rand0.5 nm
Ceck cracks e ka mālamalama kiʻekiʻe Nā papa hex e ka mālamalama kiʻekiʻe Nā wahi polytype ma ke kukui nui Nā Kīwila Visival Nā kiʻi Silicon e nānāʻia e ka mālamalama ikaika kiʻekiʻe		Nookahi Wahi Koho ≤0.05% Nookahi Wahi Koho ≤0.05% Nookahi			Cumulate lōʻihi ≤ 20 mm, hoʻokahi lōʻihi2 mm Wahi a Cumulative ≤0.1% Palapala kikowaena3% Nā'āina kumu ma -3% Ka lōʻihi o ka lālā kau1 × wafer ciameter
Nā kihi ma nā kukui ikaika kiʻekiʻe		ʻAʻohe mea iʻaeʻia ≥0.2mm laulā a me ka hohonu			7ʻaeʻia, 1 mm i kēlā me kēia
(TSD)ʻO TSD)ʻO ka hoʻokuʻuʻana		≤.000 cm-2		N / a
(Bpd) kumu mokulele mokulele mokulele		≤1000 cm-2		N / a
ʻO Sillicona ma keʻano o ka mālamalama kiʻekiʻe		Nookahi
Kōkele		ʻO ka Cassette a iʻole nā pahu pahu lifer paha
Nā Helu:
1 nā palena hemahema e pili ana i ka pae'āina holoʻokoʻa koe wale nō no kaʻaoʻao o kaʻaoʻao hema. 2 E nānāʻia nā scratches e nānā i ka maka. 3ʻO kaʻikepili dislocation wale nō mai Koh etched wafers.

E hoʻomauʻo Xkh i ka noiʻiʻana i ka noiʻi a me ka hoʻomohalaʻana i ka creakteral cardide i nā wahi e like me ka nui o nā mea kūʻai aku. Ma ka hōʻemiʻana i nā kumukūʻai a hoʻonui i ka hiki, e lawe iā xkh e pōmaikaʻi i kaʻoihana semiconductor.