2 ʻīniha Sic silikon carbide substrate 6H-N ʻAno 0.33mm 0.43mm ʻaoʻao ʻelua hoʻoliʻi kiʻekiʻe.

2 ʻīniha Sic silikon carbide substrate 6H-N ʻAno 0.33mm 0.43mm ʻaoʻao ʻelua poli ka hoʻolohi ʻana i ka wela haʻahaʻa haʻahaʻa haʻahaʻa kiʻi kiʻi.

ʻO ka wehewehe pōkole:

ʻO Silicon carbide (SiC) kahi mea semiconductor ākea ākea me ka conductivity thermal maikaʻi a me ke kūpaʻa kemika. Hōʻike ka ʻano 6H-N he hexagonal (6H) kona ʻano aniani, a ʻo "N" ke hōʻike nei he mea semiconductor ʻano ʻano N, i loaʻa pinepine ʻia e ka doping nitrogen.
ʻO ka silicon carbide substrate he mau hiʻohiʻona maikaʻi loa o ke kūpaʻa kiʻekiʻe kiʻekiʻe, ke kūpaʻa wela kiʻekiʻe, ka hana kiʻekiʻe o ke alapine, a me nā mea ʻē aʻe. Ma keʻano o nā kaʻa ikehu hou, hiki i ka silicon carbide ke kōkua i nā kaʻa ikehu hou e hoʻokō i ka māmā a hoʻemi i nā poho, a hoʻonui i ka holo kaʻa; Ma ke kahua o ke kamaʻilio 5G, hiki ke hoʻohana ʻia no ka hana ʻana i nā mea pili; I ka photovoltaic power generation hiki ke hoʻomaikaʻi i ka pono hoʻololi; Hiki i ke kahua o ke kaʻa kaʻa ke hoʻohana i kona kiʻekiʻe kiʻekiʻe a me ke kiʻekiʻe kiʻekiʻe o ka pale ʻana i nā hiʻohiʻona.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

ʻO kēia nā hiʻohiʻona o 2inch silicon carbide wafer

1. Paʻakikī: ʻO ka paʻakikī o Mohs ma kahi o 9.2.
2. ʻO ka hana aniani: hexagonal lattice structure.
3. ʻOi aku ka kiʻekiʻe o ka thermal conductivity: ʻoi aku ka kiʻekiʻe o ka conductivity thermal o SiC ma mua o ka silicon, kahi kūpono i ka hoʻopau ʻana i ka wela.
4. ʻAha ākea ākea: ʻo ka ʻāpana hui o SiC e pili ana i 3.3eV, kūpono no ka wela kiʻekiʻe, ke alapine kiʻekiʻe a me nā noi mana kiʻekiʻe.
5. Hoʻohaʻahaʻa i ke kahua uila a me ka mobility electron: High breakdown electric field and electron mobility, kūpono no ka pono o ka mana uila e like me MOSFET a me IGBT.
6. Paʻa kemika a me ka pale ʻana i ka radiation: kūpono i nā kaiapuni koʻikoʻi e like me ka aerospace a me ka pale aupuni. Kūleʻa kemika maikaʻi loa, ka waikawa, ka alkali a me nā mea hoʻoheheʻe ʻē aʻe.
7. Ka ikaika mechanical kiʻekiʻe: Ka ikaika mechanical maikaʻi ma lalo o ke kiʻekiʻe kiʻekiʻe a me ke kiʻekiʻe kiʻekiʻe.
Hiki ke hoʻohana nui ʻia i ka mana kiʻekiʻe, ke alapine kiʻekiʻe a me nā mea uila uila kiʻekiʻe, e like me nā photodetectors ultraviolet, photovoltaic inverters, kaʻa uila PCUs, etc.

He mau noi ka 2inch silicon carbide wafer.

1.Power uila uila: hoʻohanaʻia no ka hanaʻana i ka mana MOSFET, IGBT a me nā mea hana'ē aʻe, hoʻohana nuiʻia i ka hoʻololi mana a me nā kaʻa uila.

Nā mea hana 2.Rf: Ma nā lako kamaʻilio, hiki ke hoʻohana ʻia ʻo SiC i nā amplifiers kiʻekiʻe a me nā mea hoʻonui mana RF.

3.Photoelectric nā mea hana: e like me SIC-based leds, oi loa aku i ka uliuli a me ka ultraviolet noi.

4.Sensors: Ma muli o kona kiʻekiʻe kiʻekiʻe a me ke kūpaʻa kemika, hiki ke hoʻohana ʻia nā substrates SiC e hana i nā mea ʻike wela kiʻekiʻe a me nā noi sensor ʻē aʻe.

5.Military a me ka aerospace: ma muli o kona kūpaʻa kiʻekiʻe o ka mahana a me nā hiʻohiʻona ikaika kiʻekiʻe, kūpono no ka hoʻohana ʻana i nā wahi koʻikoʻi.

ʻO nā kahua noi nui o 6H-N type 2 "SIC substrate e loaʻa i nā kaʻa ikehu hou, ka hoʻoili uila kiʻekiʻe a me nā keʻena hoʻololi, nā waiwai keʻokeʻo, nā kaʻa kaʻa kiʻekiʻe, nā motika, photovoltaic inverter, pulse power supply a pēlā aku.

Hiki ke hoʻopilikinoʻia ka XKH me nā mānoanoa likeʻole e like me nā koi o ka mea kūʻai. Loaʻa nā lāʻau lapaʻau like ʻole a me ka polishing. Kākoʻo ʻia nā ʻano doping like ʻole (e like me ka nitrogen doping). ʻO ka manawa hāʻawi maʻamau he 2-4 mau wiki, e pili ana i ka hana maʻamau. E hoʻohana i nā mea pale anti-static a me ka anti-seismic foam e hōʻoia i ka palekana o ka substrate. Loaʻa nā koho hoʻouna like ʻole, a hiki i nā mea kūʻai ke nānā i ke kūlana o ka logistic i ka manawa maoli ma o ka helu helu i hāʻawi ʻia. Hāʻawi i ke kākoʻo ʻenehana a me nā lawelawe kūkākūkā e hōʻoia i hiki i nā mea kūʻai ke hoʻoponopono i nā pilikia i ke kaʻina o ka hoʻohana.