200mm SiC substrate dummy papa 4H-N 8 iniha SiC wafer

200mm SiC substrate dummy grade 4H-N 8 iniha SiC wafer Kiʻi Hōʻike ʻia

ʻO ka wehewehe pōkole:

ʻO ka substrate carbide silikon me ke anawaena o 8 iniha (ma kahi o 200 mm). ʻO ka substrate Silicon carbide (SiC) kahi mea nui no ka hana ʻana i nā mana mana a me nā mea optoelectronic. Hoʻohana maʻamau ʻia nā substrate SiC 8-inihi no ka hana ʻana i nā mea uila mana kiʻekiʻe e like me nā MOSFET mana, nā mana diodes, a me nā mea hana mana kiʻekiʻe. Hiki i kēia substrate nui ke hoʻomaikaʻi i ka hana hana, hoʻemi i nā kumukūʻai hana, a kōkua i ka hana ʻana i nā mea ikaika. Loaʻa i nā mea carbide silikoni ka conductivity thermal maikaʻi loa, ke kūpaʻa wela kiʻekiʻe a me ka pale ʻana i ka radiation, e hana ana ia i kahi koho kūpono no ka hana ʻana i nā mana mana kiʻekiʻe.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

ʻO nā pilikia ʻenehana o ka 8-inch SiC substrate production e loaʻa:

1.Crystal Growth: Hiki ke paʻakikī ka loaʻa ʻana o ke kūlana kiʻekiʻe kiʻekiʻe kiʻekiʻe kiʻekiʻe o ka carbide silicon carbide i nā anawaena nui ma muli o ka mana o nā hemahema a me nā haumia.

2.Wafer Processing: ʻO ka nui nui o nā wafers 8-inch e hōʻike ana i nā pilikia ma keʻano o ka likeʻole a me ka mana kīnā i ka wā o ka hana wafer, e like me ka polishing, etching, a me ka doping.

3.Material Homogeneity: ʻO ka hōʻoia ʻana i nā waiwai waiwai a me ka homogeneity ma waena o ka substrate 8-inch SiC holoʻokoʻa e koi ʻia a koi ʻia ka mana pololei i ka wā o ka hana hana.

4.Cost: ʻO ka hoʻonui ʻana i ka 8-inch SiC substrates me ka mālama ʻana i ke ʻano kiʻekiʻe o ka waiwai a me ka hua hiki ke paʻakikī i ka hoʻokele waiwai ma muli o ka paʻakikī a me ke kumukūʻai o nā kaʻina hana.

5. ʻO ka hoʻoponopono ʻana i kēia mau pilikia ʻenehana he mea koʻikoʻi ia no ka hoʻohana ākea ʻana o nā substrates 8-inch SiC i nā mana hana kiʻekiʻe a me nā mea optoelectronic.

Hāʻawi mākou i nā substrate sapphire mai nā hale kūʻai SiC hoʻoili helu ʻekahi o Kina me Tankeblue. ʻOi aku ma mua o 10 mau makahiki o ka ʻoihana i ʻae iā mākou e mālama i kahi pilina pili me ka hale hana. Hiki iā mākou ke hāʻawi iā ʻoe i nā substrates 6inch a me 8inchSiC āu e pono ai no ka manawa lōʻihi a me ka lako paʻa ʻoiai e hāʻawi ana i ke kumukūʻai maikaʻi loa a me ke kumukūʻai.

He ʻoihana ʻenehana kiʻekiʻe ʻo Tankeblue i ka hoʻomohala ʻana, ka hana ʻana a me ke kūʻai ʻana i nā ʻāpana ʻekolu o nā hanauna semiconductor silicon carbide (SiC). ʻO ka hui kekahi o nā mea hana nui o ka honua i nā wafers SiC.