2 iniha 50.8mm Germanium Wafer Substrate Hoʻokahi aniani 1SP 2SP
ʻIkepili kikoʻī
Loaʻa i nā ʻāpana Germanium nā waiwai semiconductor. Ua hana koʻikoʻi i ka hoʻomohala ʻana i ka physics solid state a me ka electronic state solid. He 5.32g/cm 3, hiki ke helu ʻia ka germanium ma ke ʻano he metala lahilahi, germanium chemical stability, ʻaʻole pili me ka ea a i ʻole ka mahu wai i ka lumi wela, akā ma 600 ~ 700 ℃, hoʻopuka koke ʻia ka germanium dioxide. . ʻAʻole hana me ka waika hydrochloric, dilute sulfuric acid. Ke hoʻomehana ʻia ka ʻakika sulfuric concentrated, e hoʻoheheʻe mālie ka germanium. I loko o ka waikawa nitric a me ka aqua regia, hiki ke hoʻoheheʻe ʻia ka germanium. He nāwaliwali loa ka hopena o ka solution alkali ma ka germanium, akā hiki i ka alkali hoʻoheheʻe ʻia i ka ea ke hoʻoheheʻe koke i ka germanium. ʻAʻole hana ʻo Germanium me ke kalapona, no laila ua hoʻoheheʻe ʻia i loko o kahi pahu graphite a ʻaʻole e hoʻohaumia ʻia e ke kalapona. Loaʻa i ka Germanium nā waiwai semiconductor maikaʻi, e like me ka electron mobility, hole mobility a pēlā aku. Loaʻa i ka hoʻomohala ʻana o germanium ka mana nui.
Hōʻike
ʻano ulu | CZ | ||
hana aniani | Pūnaehana Cubic | ||
Lattice mau | a=5.65754 Å | ||
ʻO ka mānoanoa | 5.323g/cm3 | ||
Lae hehee | 937.4 ℃ | ||
Doping | Un-doping | Doping-Sb | Doping-Ga |
ʻAno | / | N | P |
kūʻē | >35Ωcm | 0.01~35 Ωcm | 0.05~35 Ωcm |
EPD | <4×103∕cm2 | <4×103∕cm2 | <4×103∕cm2 |
Anawaena | 2 iniha/50.8 mm | ||
mānoanoa | 0.5mm, 1.0mm | ||
Ili | DSP a me SSP | ||
Kūlana | <100>,<110>,<111>,±0.5º | ||
Ra | ≤5Å(5µm×5µm) | ||
Pūʻolo | 100 papa pūʻolo ,1000 papa lumi |