2 'īniha 6H-N Silicon Carbide Substrate Sic Wafer Papalua Polished Conductive Prime Grade Mos Grade

2Inch 6H-N Silicon Carbide Substrate Sic Wafer Papalua Polished Conductive Prime Grade Mos Kiʻi Hōʻike ʻia

ʻO ka wehewehe pōkole:

ʻO ka 6H n-type Silicon Carbide (SiC) hoʻokahi-crystal substrate he mea semiconductor koʻikoʻi i hoʻohana nui ʻia i nā noi uila kiʻekiʻe, kiʻekiʻe-frequency, a me ka wela wela. Kaulana ʻia no kona ʻano hexagonal crystal structure, hāʻawi ʻo 6H-N SiC i kahi bandgap ākea a me ka conductivity thermal kiʻekiʻe, e kūpono ia no nā kaiapuni koi.
Hiki i kēia mea ke hoʻomohala i nā mea uila uila ikaika, e like me MOSFET a me IGBT, hiki ke hana i nā volta kiʻekiʻe a me nā mahana ma mua o nā mea i hana ʻia mai ke kilika kuʻuna. ʻO kāna conductivity thermal maikaʻi e hōʻoia i ka hoʻoheheʻe wela maikaʻi, koʻikoʻi no ka mālama ʻana i ka hana a me ka hilinaʻi i nā noi mana kiʻekiʻe.
Ma nā noi radiofrequency (RF), kākoʻo nā waiwai o 6H-N SiC i ka hana ʻana i nā mea hiki ke hana i nā alapine kiʻekiʻe me ka hoʻomaikaʻi maikaʻi ʻana. ʻO kona kūpaʻa kemika a me kona kūpaʻa ʻana i ka radiation ka mea kūpono no ka hoʻohana ʻana i nā wahi paʻakikī, e komo pū me nā ʻāpana aerospace a me nā pale.
Eia kekahi, ʻo 6H-N SiC substrates ka mea hoʻohui i nā mea optoelectronic, e like me nā photodetectors ultraviolet, kahi e hiki ai i kā lākou bandgap ākea ke ʻike pono i nā kukui UV. ʻO ka hui pū ʻana o kēia mau waiwai e hoʻolilo iā 6H n-type SiC i mea maʻalahi a pono ʻole i ka holomua ʻana i nā ʻenehana uila a me optoelectronic hou.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Eia nā ʻano o ka wafer silicon carbide:

· Inoa Huahana: SiC substrate
· Hexagonal Structure: Nā waiwai uila kū hoʻokahi.
· Electron Mobility: ~600 cm²/V·s.
· Paʻa Kemika: Paʻa i ka ʻino.
· Palekana Radiation: He kūpono no nā kaiapuni paʻakikī.
· Haʻahaʻa Intrinsic Carrier Concentration: Pono i nā wela kiʻekiʻe.
· Paʻa: ʻO nā waiwai mechanical ikaika.
· Hiki i ka Optoelectronic: ʻike pono i nā kukui UV.

He nui nā noi ʻana o ka wafer silicone carbide

Nā noi wafer SiC:
Hoʻohana ʻia nā substrate SiC (Silicon Carbide) i nā noi hana kiʻekiʻe ma muli o ko lākou mau waiwai kūʻokoʻa e like me ka conductivity thermal kiʻekiʻe, ka ikaika o ke kahua uila kiʻekiʻe, a me ka bandgap ākea. Eia kekahi mau noi:

1.Power Electronics:
· MOSFET kiʻekiʻe-volt
· IGBTs (Insulated Gate Bipolar Transistors)
· Schottky diodes
· Nā mea hoʻohuli mana

2. High-Frequency Devices:
· RF (Radio Frequency) amplifiers
· Nā transistors microwave
· Nā mea hawewe millimeter

3. High-Temperature Electronics:
· Nā mea ʻike a me nā kaapuni no nā kaiapuni koʻikoʻi
· ʻAerospace electronics
· Nā mea uila kaʻa (e laʻa, nā ʻāpana hoʻokele engine)

4.Optoelectronics:
· Nā mea nānā kiʻi Ultraviolet (UV).
· Nā kukui-emitting diodes (LED)
· Nā diodes laser

5. Pūnaehana ikehu hou:
· Nā mea hoʻohuli lā
· Nā mea hoʻohuli makani
· Nā kaʻa uila uila

6. ʻOihana a me ka pale:
· Pūnaehana Radar
· Nā leka uila
· ʻO nā mea hoʻokani nuklear reactor

SiC wafer Hoʻopilikino

Hiki iā mākou ke hana i ka nui o ka substrate SiC e hoʻokō i kāu mau koi kikoʻī. Hāʻawi pū mākou i kahi wafer 4H-Semi HPSI SiC me ka nui o 10x10mm a i ʻole 5x5 mm.
Hoʻoholo ʻia ke kumukūʻai e ka hihia, a hiki ke hoʻololi ʻia nā kikoʻī o ka pahu i kāu makemake.
ʻO ka manawa hoʻouna i loko o 2-4 mau pule. ʻAe mākou i ka uku ma o T / T.
Loaʻa i kā mākou hale hana nā lako hana kiʻekiʻe a me ka hui ʻenehana, hiki ke hana i nā kikoʻī like ʻole, nā mānoanoa a me nā ʻano o ka wafer SiC e like me nā koi kikoʻī o nā mea kūʻai.