3 iniha 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-insuling SiC wafer

ʻO ka wehewehe pōkole:

ʻO ke kūlana kiʻekiʻe kiʻekiʻe ʻo SiC wafer (Silicon Carbide) i ka ʻoihana uila a me ka optoelectronic. ʻO 3inch SiC wafer kahi mea hana semiconductor e hiki mai ana, semi-insulating silicon-carbide wafers o 3-inch anawaena. Hoʻolālā ʻia nā wafers no ka hana ʻana i nā mana, RF a me nā mea optoelectronics.


Huahana Huahana

Huahana Huahana

wehewehe

ʻO 3-inihi 4H semi-insulated SiC (silicon carbide) substrate wafers he mea maʻamau semiconductor. Hōʻike ʻo 4H i kahi ʻano kristal tetrahexahedral. ʻO ka semi-insulation ke ʻano o ka substrate he mau hiʻohiʻona kūpaʻa kiʻekiʻe a hiki ke hoʻokaʻawale ʻia mai ke kahe o kēia manawa.

Loaʻa nā ʻano like ʻole o ia mau substrate wafers: kiʻekiʻe thermal conductivity, haʻahaʻa conduction poho, kiʻekiʻe kiʻekiʻe wela kū'ē, a me ka maikaʻi mechanical a me ka paʻa kemika. Ma muli o ka nui o ka ikehu ākea a hiki ke kū i nā wela kiʻekiʻe a me nā kūlana kiʻekiʻe o ke kahua uila, ua hoʻohana nui ʻia nā wafers semi-insulated 4H-SiC i nā uila uila a me nā mea lekiō (RF).

ʻO nā noi nui o nā wafers semi-insulated 4H-SiC:

1--Power electronics: Hiki ke hoʻohana ʻia nā wafers 4H-SiC e hana i nā mea hoʻololi mana e like me MOSFET (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) a me Schottky diodes. He haʻahaʻa ka hoʻololi a me ka hoʻololi ʻana o kēia mau mea hana i nā kaiapuni kiʻekiʻe a me ka wela kiʻekiʻe a hāʻawi i ka ʻoi aku ka maikaʻi a me ka hilinaʻi.

2--Radio Frequency (RF) Devices: 4H-SiC semi-insulated wafers hiki ke hoʻohana ʻia e hana i ka mana kiʻekiʻe, kiʻekiʻe frequency RF power amplifier, chip resistors, kānana, a me nā mea hana ʻē aʻe. ʻOi aku ka maikaʻi o ka hana kiʻekiʻe kiʻekiʻe a me ka paʻa wela ma muli o ka nui o ka electron saturation drift rate a me ka conductivity thermal kiʻekiʻe.

3--Optoelectronic mea hana: 4H-SiC semi-insulated wafers hiki ke hoʻohana no ka hana kiʻekiʻe-mana laser diodes, UV kukui a me ka optoelectronic integrated kaapuni.

I ka ʻōlelo o ke alakaʻi ʻana i ka mākeke, ke piʻi nei ka noi no 4H-SiC semi-insulated wafers me ka ulu ʻana o nā māla o ka uila uila, RF a me optoelectronics. ʻO kēia ma muli o ka loaʻa ʻana o ka silicon carbide i ka nui o nā noi, e pili ana i ka pono o ka ikehu, nā kaʻa uila, ka ikehu hou a me nā kamaʻilio. I ka wā e hiki mai ana, ʻo ka mākeke no 4H-SiC semi-insulated wafers e hoʻomau mau nei a manaʻo ʻia e hoʻololi i nā mea silika maʻamau i nā noi like ʻole.

Kiʻi kikoʻī

4H-Semi SiC substrate wafer Silicon Carbide Semi-insulting SiC wafer (1)
4H-Semi SiC substrate wafer Silicon Carbide Semi-insulting SiC wafers (2)
4H-Semi SiC substrate wafer Silicon Carbide Semi-insuling SiC wafer (3)

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