3 ʻīniha Maʻemaʻe kiʻekiʻe Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Prime grade

ʻO ka wehewehe pōkole:

ʻO ka HPSI (High-Purity Silicon Carbide) SiC wafer, me ke anawaena 3-inihi a me ka mānoanoa o 350 µm ± 25 µm, ua hana ʻia no nā noi uila uila ʻoki ʻoki. Kaulana ʻia nā wafers SiC no kā lākou mau waiwai waiwai, e like me ka conductivity thermal kiʻekiʻe, ke kūpaʻa uila kiʻekiʻe, a me ka emi ʻana o ka ikehu liʻiliʻi, e hoʻolilo iā lākou i koho koho no nā mana semiconductor mana. Hoʻolālā ʻia kēia mau wafers no ka mālama ʻana i nā kūlana koʻikoʻi, hāʻawi i ka hoʻomaikaʻi ʻana i ka hana ma nā alapine kiʻekiʻe, kiʻekiʻe-voltage, a me nā wahi wela kiʻekiʻe, ʻoiai e hōʻoiaʻiʻo ana i ka ʻoi aku ka maikaʻi o ka ikehu a me ka lōʻihi.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Palapala noi

He mea koʻikoʻi nā wafers HPSI SiC i ka hiki ʻana i nā mana mana o ka hanauna e hiki mai ana, i hoʻohana ʻia i nā ʻano noiʻi kiʻekiʻe.
Nā Pūnaehana Hoʻololi Mana: ʻO nā wafers SiC ke kumu kumu no nā mea mana e like me nā MOSFET mana, nā diodes, a me nā IGBT, he mea koʻikoʻi no ka hoʻololi ʻana i ka mana i nā kaapuni uila. Loaʻa kēia mau ʻāpana i nā lako mana kiʻekiʻe, nā kaʻa kaʻa, a me nā inverters ʻoihana.

Nā Kaʻa Uila (EV):ʻO ka piʻi nui ʻana o nā kaʻa uila e pono ai ka hoʻohana ʻana i nā uila uila ʻoi aku ka maikaʻi, a ʻo nā wafers SiC i ka mua o kēia hoʻololi. Ma ka EV powertrains, hāʻawi kēia mau wafers i ka pono kiʻekiʻe a me ka hiki ke hoʻololi wikiwiki, e hāʻawi i ka manawa hoʻopiʻi wikiwiki, ka lōʻihi lōʻihi, a me ka hoʻonui ʻana i ka hana kaʻa holoʻokoʻa.

Hiki ke hoʻololi i ka ikehu:I nā ʻōnaehana ikehu hou e like me ka mana o ka lā a me ka makani, hoʻohana ʻia nā wafers SiC i nā mea hoʻohuli a me nā mea hoʻololi e hiki ai ke hopu a me ka hāʻawi ʻana i ka ikehu. ʻO ka conductivity thermal kiʻekiʻe a me ka voltage breakdown kiʻekiʻe o SiC e hōʻoia i ka hana pono o kēia mau ʻōnaehana, ʻoiai ma lalo o nā kūlana kūlohelohe.

ʻOihana ʻOihana a me Robotics:Pono nā uila uila hana kiʻekiʻe i nā ʻōnaehana automation ʻenehana a me nā robotics i nā mea hiki ke hoʻololi wikiwiki, mālama i nā ukana mana nui, a me ka hana ma lalo o ke kaumaha nui. Hoʻokō nā semiconductor i hoʻokumu ʻia ʻo SiC i kēia mau koi ma o ka hāʻawi ʻana i ka pono kiʻekiʻe a me ka paʻa, ʻoiai ma nā wahi hana paʻakikī.

Pūnaehana Telecommunication:I loko o nā ʻōnaehana kelepona, kahi koʻikoʻi ka hilinaʻi kiʻekiʻe a me ka hoʻololi ʻana i ka ikehu, hoʻohana ʻia nā wafers SiC i nā lako mana a me nā mea hoʻololi DC-DC. Kōkua ʻo SiC e hōʻemi i ka hoʻohana ʻana i ka ikehu a hoʻonui i ka hana ʻōnaehana ma nā kikowaena ʻikepili a me nā pūnaewele kamaʻilio.

Ma ka hāʻawi ʻana i kahi kumu paʻa no nā noi mana kiʻekiʻe, hiki i ka HPSI SiC wafer ke hoʻomohala i nā mea hana ikaika, kōkua i nā ʻoihana e hoʻololi i nā ʻōmaʻomaʻo, ʻoi aku ka hoʻomau.

Waiwai

operty	Papa Hana Hana	Papa noiʻi	Papa Dummy
Anawaena	75.0 mm ± 0.5 mm	75.0 mm ± 0.5 mm	75.0 mm ± 0.5 mm
mānoanoa	350 µm ± 25 µm	350 µm ± 25 µm	350 µm ± 25 µm
Kūlana Wafer	Ma ke axis: <0001> ± 0.5°	Ma ke axis: <0001> ± 2.0°	Ma ke axis: <0001> ± 2.0°
Micropipe Density no 95% o nā Wafers (MPD)	≤ 1 knm⁻²	≤ 5 knm⁻²	≤ 15 knm⁻²
Kū'ē Uila	≥ 1E7 Ω·cm	≥ 1E6 Ω·cm	≥ 1E5 Ω·cm
Dopant	Wehe ʻia	Wehe ʻia	Wehe ʻia
Kūlana Pāha mua	{11-20} ± 5.0°	{11-20} ± 5.0°	{11-20} ± 5.0°
Ka lōʻihi pālahalaha	32.5 mm ± 3.0 mm	32.5 mm ± 3.0 mm	32.5 mm ± 3.0 mm
Ka lōʻihi pālahalaha lua	18.0 mm ± 2.0 mm	18.0 mm ± 2.0 mm	18.0 mm ± 2.0 mm
Kūlana Pāpā lua	ʻO ke alo i luna: 90° CW mai ka papahele mua ± 5.0°	ʻO ke alo i luna: 90° CW mai ka papahele mua ± 5.0°	ʻO ke alo i luna: 90° CW mai ka papahele mua ± 5.0°
Hoʻokuʻu Edge	3 mm	3 mm	3 mm
LTV/TTV/Bow/Warp	3 µm / 10 µm / ±30 µm / 40 µm	3 µm / 10 µm / ±30 µm / 40 µm	5 µm / 15 µm / ±40 µm / 45 µm
ʻAole ʻili	C-maka: Hoʻomaʻamaʻa, Si-maka: CMP	C-maka: Hoʻomaʻamaʻa, Si-maka: CMP	C-maka: Hoʻomaʻamaʻa, Si-maka: CMP
Nā māwae (i nānā ʻia e ke kukui ikaika kiʻekiʻe)	ʻAʻohe	ʻAʻohe	ʻAʻohe
Nā Papa Hex (i nānā ʻia e ke kukui ikaika kiʻekiʻe)	ʻAʻohe	ʻAʻohe	ʻĀpana hui 10%
Nā ʻāpana Polytype (i nānā ʻia e ke kukui ikaika kiʻekiʻe)	ʻĀpana hui 5%	ʻĀpana hui 5%	ʻĀpana hui 10%
Nā ʻōpala (nānā ʻia e ke kukui ikaika kiʻekiʻe)	≤ 5 ʻōpala, ka lōʻihi kumulative ≤ 150 mm	≤ 10 ʻōpala, ka lōʻihi kumulative ≤ 200 mm	≤ 10 ʻōpala, ka lōʻihi kumulative ≤ 200 mm
ʻO ka ʻoki ʻoki	ʻAʻole ʻae ʻia ≥ 0.5 mm laula a me ka hohonu	2 'ae 'ia, ≤ 1 mm laula a me ka hohonu	5 'ae 'ia, ≤ 5 mm laula a me ka hohonu
ʻO ka hoʻohaumia ʻana o ka ʻili (nānā ʻia e ke kukui ikaika kiʻekiʻe)	ʻAʻohe	ʻAʻohe	ʻAʻohe

Nā Pōmaikaʻi Nui

ʻO ka hoʻokō wela kiʻekiʻe: ʻO ka conductivity thermal kiʻekiʻe o SiC e hōʻoia i ka hoʻopau ʻana o ka wela i nā mea mana, e ʻae iā lākou e hana ma nā pae mana kiʻekiʻe a me nā alapine me ka ʻole o ka wela. Hoʻololi kēia i nā ʻōnaehana liʻiliʻi, ʻoi aku ka maikaʻi a me ka lōʻihi o ka hana.

Kiʻekiʻe Breakdown Voltage: Me kahi bandgap ākea i hoʻohālikelike ʻia me ke silikoni, kākoʻo nā wafers SiC i nā noi kiʻekiʻe-voltage, e hoʻolilo iā lākou i mea kūpono no nā mea uila uila e pono ai ke kū i nā volta haʻihaʻi kiʻekiʻe, e like me nā kaʻa uila, nā ʻōnaehana mana grid, a me nā ʻōnaehana ikehu hou.

Hoʻemi ʻia ka Nalo Mana: ʻO ka haʻahaʻa haʻahaʻa a me ka wikiwiki o ka hoʻololi ʻana o nā mea SiC e hopena i ka emi ʻana o ka ikehu i ka wā o ka hana. ʻAʻole kēia e hoʻomaikaʻi wale i ka maikaʻi akā hoʻonui pū i ka mālama ʻana i ka ikehu holoʻokoʻa o nā ʻōnaehana kahi i kau ʻia ai.
Hoʻonui i ka hilinaʻi i loko o nā kaiapuni koʻikoʻi: ʻO nā mea waiwai koʻikoʻi o SiC e ʻae iā ia e hana i nā kūlana koʻikoʻi, e like me nā wela kiʻekiʻe (a hiki i 600 ° C), nā uila kiʻekiʻe, a me nā alapine kiʻekiʻe. Hana kēia i nā wafers SiC i kūpono no ke koi ʻana i nā noi ʻoihana, automotive, a me ka ikehu.

ʻO ka Energy Efficiency: Hāʻawi nā mea SiC i ka mana kiʻekiʻe aʻe ma mua o nā mea maʻamau i hoʻokumu ʻia i ka silicon, e hōʻemi ana i ka nui a me ke kaumaha o nā ʻōnaehana uila ʻoiai e hoʻomaikaʻi ana i kā lākou hana holoʻokoʻa. Ke alakaʻi nei kēia i ka mālama kālā a me kahi kapuaʻi kaiapuni liʻiliʻi i nā noi e like me ka ikehu hou a me nā kaʻa uila.

Scalability: ʻO ke anawaena 3-inihi a me ka hoʻomanawanui ʻana o ka hana ʻana o ka wafer HPSI SiC e hōʻoia i ka scalable no ka hana nui, e hālāwai me nā noiʻi a me nā koi ʻoihana kalepa.

Ka hopena

ʻO ka wafer HPSI SiC, me kona anawaena 3-inihi a me 350 µm ± 25 µm mānoanoa, ʻo ia ka mea maikaʻi loa no ka hanauna e hiki mai ana o nā mea uila mana kiʻekiʻe. ʻO kona hui pū ʻana o ka thermal conductivity, high breakdown voltage, low energy loss, a me ka hilinaʻi ma lalo o nā kūlana koʻikoʻi e lilo ia i mea koʻikoʻi no nā noi like ʻole i ka hoʻololi ʻana i ka mana, ka ikehu hou, nā kaʻa uila, nā ʻōnaehana ʻoihana, a me ke kelepona.

Ua kūpono kēia wafer SiC no nā ʻoihana e ʻimi nei e hoʻokō i ka ʻoi aku ka maikaʻi, ka mālama ʻana i ka ikehu, a me ka hilinaʻi o ka ʻōnaehana. Ke hoʻomau nei ka ulu ʻana o ka ʻenehana uila uila, hāʻawi ka HPSI SiC wafer i ke kumu no ka hoʻomohala ʻana i nā hopena o ka hanauna e hiki mai ana, ʻoi aku ka maikaʻi o ka ikehu, e hoʻohuli i ka hoʻololi ʻana i kahi wā e hiki mai ana.