3inihi SiC substrate Production Dia76.2mm 4H-N

ʻO nā hiʻohiʻona nui o 3 iniha silicon carbide mosfet wafers penei;

ʻO Silicon Carbide (SiC) kahi mea semiconductor ākea-bandgap, i hōʻike ʻia e ka conductivity thermal kiʻekiʻe, ka mobility electron kiʻekiʻe, a me ka ikaika o ke kahua uila. Hoʻohanohano kēia mau waiwai i nā wafers SiC i ka mana kiʻekiʻe, kiʻekiʻe-frequency, a me nā noi wela kiʻekiʻe. Ma kahi o ka polytype 4H-SiC, hāʻawi kona ʻano aniani i ka hana uila maikaʻi loa, e lilo ia i mea koho no nā mea uila uila.

ʻO ka 3-inch Silicon Carbide 4H-N wafer he wafer nitrogen-doped me ka conductivity N-type. Hāʻawi kēia ʻano doping i ka wafer i ka ʻike electron kiʻekiʻe, ma laila e hoʻonui ai i ka hana conductive o ka mea. ʻO ka nui o ka wafer, ma 3 iniha (ke anawaena o 76.2 mm), he ana maʻamau i hoʻohana ʻia i ka ʻoihana semiconductor, kūpono no nā kaʻina hana like ʻole.

Hana ʻia ka wafer Silicon Carbide 4H-N me ka hoʻohana ʻana i ke ʻano Physical Vapor Transport (PVT). Hoʻopili kēia kaʻina hana i ka hoʻololi ʻana i ka pauka SiC i nā kristal hoʻokahi i nā wela kiʻekiʻe, e hōʻoiaʻiʻo ana i ka maikaʻi o ke aniani a me ka like ʻole o ka wafer. Eia kekahi, ʻo ka mānoanoa o ka wafer ma kahi o 0.35 mm, a ua kau ʻia kona ʻili i ka poli ʻaoʻao ʻelua e hoʻokō i kahi kiʻekiʻe kiʻekiʻe o ka palahalaha a me ka maʻalahi, he mea koʻikoʻi no nā kaʻina hana semiconductor ma hope.

ʻO ka laulā noiʻi o ka 3-inch Silicon Carbide 4H-N wafer he ākea, me nā mea uila uila mana kiʻekiʻe, nā ʻike wela kiʻekiʻe, nā mea RF, a me nā mea optoelectronic. ʻO kāna hana maikaʻi loa a me ka hilinaʻi e hiki ai i kēia mau mea hana ke hana paʻa ma lalo o nā kūlana koʻikoʻi, e hālāwai ana i ka koi no nā mea semiconductor kiʻekiʻe i ka ʻoihana uila hou.

Hiki iā mākou ke hāʻawi iā 4H-N 3inch SiC substrate, nā māka like ʻole o nā wafers stock substrate. Hiki iā mākou ke hoʻonohonoho i ka hana maʻamau e like me kāu makemake. Welina nīnau!