4 iniha Sapphire Wafer C-Plane SSP/DSP 0.43mm 0.65mm
Nā noi
● Pākuʻi ulu no nā hui III-V a me II-VI.
● Electronics a me optoelectronics.
● Nā polokalamu IR.
● Silicon On Sapphire Integrated Circuit(SOS).
● Radio Frequency Integrated Circuit(RFIC).
I ka hana ʻana o LED, hoʻohana ʻia nā wafers sapphire ma ke ʻano he substrate no ka ulu ʻana o nā kristal gallium nitride (GaN), e hoʻokuʻu ana i ka mālamalama i ka wā e hoʻohana ʻia ai ke ʻano uila. ʻO Sapphire kahi mea substrate kūpono no ka ulu ʻana o GaN no ka mea he ʻano aniani like kona a me ka coefficient hoʻonui wela i GaN, e hōʻemi ana i nā hemahema a hoʻomaikaʻi i ka maikaʻi kristal.
I loko o nā optics, hoʻohana ʻia nā wafers sapphire e like me nā puka makani a me nā lens i nā wahi kiʻekiʻe a me nā wela wela, a me nā ʻōnaehana kiʻi infrared, no ko lākou ʻike kiʻekiʻe a me ka paʻakikī.
Hōʻike
'ikamu | 4-inihi C-plane(0001) 650μm Sapphire Wafers | |
Na Mea Kilika | 99,999%, Maʻemaʻe Kiʻekiʻe, Monocrystalline Al2O3 | |
Papa | Prime, Epi-Makaukau | |
Kūlana ʻili | mokulele C(0001) | |
C-plane off-angle i ka M-axis 0.2 +/- 0.1° | ||
Anawaena | 100.0 mm +/- 0.1 mm | |
mānoanoa | 650 μm +/- 25 μm | |
Kūlana Pāha mua | A-mokulele(11-20) +/- 0.2° | |
Ka lōʻihi pālahalaha | 30.0 mm +/- 1.0 mm | |
ʻaoʻao hoʻokahi i poli | ʻIli i mua | Epi-polled, Ra < 0.2 nm (na AFM) |
(SSP) | Ili hope | ʻĀina maikaʻi, Ra = 0.8 μm i 1.2 μm |
ʻaoʻao ʻelua i hoʻoliʻi ʻia | ʻIli i mua | Epi-polled, Ra < 0.2 nm (na AFM) |
(DSP) | Ili hope | Epi-polled, Ra < 0.2 nm (na AFM) |
TTV | < 20 μm | |
PAHU | < 20 μm | |
WARP | < 20 μm | |
Hoʻomaʻemaʻe / Packaging | ʻO ka papa 100 ka hoʻomaʻemaʻe ʻana i ka lumi hoʻomaʻemaʻe a me ka ʻūpī ʻūhā, | |
25 mau ʻāpana i hoʻokahi pahu cassette a i ʻole ʻāpana ʻāpana hoʻokahi. |
Hoʻopili a hoʻouna
ʻO ka mea maʻamau, hāʻawi mākou i ka pōʻai e 25pcs pahu cassette; hiki iā mākou ke hoʻopaʻa ʻia e ka pahu wafer hoʻokahi ma lalo o ka lumi hoʻomaʻemaʻe papa 100 e like me ka koi o ka mea kūʻai.