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ʻO ka wafer substrate SiC 4H-N 8 ʻīniha Silicon Carbide Dummy Research grade 500um ka mānoanoa

ʻO ka wafer substrate SiC 4H-N 8 ʻīniha Silicon Carbide Dummy Research grade 500um mānoanoa Kiʻi i hōʻike ʻia
  • ʻO ka wafer substrate SiC 4H-N 8 ʻīniha Silicon Carbide Dummy Research grade 500um ka mānoanoa
  • ʻO ka wafer substrate SiC 4H-N 8 ʻīniha Silicon Carbide Dummy Research grade 500um ka mānoanoa

Wehewehe Pōkole:

Hoʻohana ʻia nā wafers carbide Silicon i nā mea uila e like me nā diodes mana, MOSFET, nā mea microwave mana kiʻekiʻe, a me nā transistors RF, e hiki ai ke hoʻololi pono i ka ikehu a me ka hoʻokele mana. Loaʻa pū ka hoʻohana ʻana i nā wafers SiC a me nā substrates i nā mea uila kaʻa, nā ʻōnaehana aerospace, a me nā ʻenehana ikehu hou.


Nā hiʻohiʻona

Pehea ʻoe e koho ai i nā wafers Silicon Carbide a me nā substrates SiC?

I ke koho ʻana i nā wafers a me nā substrates silicon carbide (SiC), aia kekahi mau mea e noʻonoʻo ai. Eia kekahi mau pae hoʻohālikelike koʻikoʻi:

ʻAno Mea: E hoʻoholo i ke ʻano o ka mea SiC e kūpono i kāu noi, e like me 4H-SiC a i ʻole 6H-SiC. ʻO ka ʻano kristal i hoʻohana pinepine ʻia ʻo 4H-SiC.

ʻAno Doping: E ​​hoʻoholo inā makemake ʻoe i kahi substrate SiC doped a undoped paha. ʻO nā ʻano doping maʻamau he ʻano N (n-doped) a i ʻole ʻano P (p-doped), ma muli o kāu mau koi kikoʻī.

ʻAno o ke Aniani: E loiloi i ka maikaʻi o ke aniani o nā wafers SiC a i ʻole nā ​​​​​​mea hoʻohui. Hoʻoholo ʻia ka maikaʻi i makemake ʻia e nā palena e like me ka helu o nā kīnā, ke kuhikuhi ʻana o ka aniani, a me ka ʻoʻoleʻa o ka ʻili.

Anawaena Wafer: E koho i ka nui wafer kūpono e pili ana i kāu noi. ʻO nā nui maʻamau e komo pū me 2 ʻīniha, 3 ʻīniha, 4 ʻīniha, a me 6 ʻīniha. ʻO ka nui o ke anawaena, ʻo ka nui o ka hua e hiki iā ʻoe ke loaʻa no kēlā me kēia wafer.

Mānoanoa: E noʻonoʻo i ka mānoanoa i makemake ʻia o nā wafers SiC a i ʻole nā ​​​​​​substrates. Loaʻa nā koho mānoanoa maʻamau mai kekahi mau micrometers a i kekahi mau haneli micrometers.

Kuhikuhi: E hoʻoholo i ke kuhikuhi crystallographic e kūlike me nā koi o kāu noi. ʻO nā kuhikuhi maʻamau e komo pū me (0001) no 4H-SiC a me (0001) a i ʻole (0001̅) no 6H-SiC.

Hoʻopau ʻIli: E loiloi i ka hoʻopau ʻili o nā wafers SiC a i ʻole nā ​​​​​​mea hana. Pono ka ʻili e laumania, hoʻowali ʻia, a ʻaʻohe ona ʻōpala a i ʻole nā ​​​​​​mea haumia.

Kaulana o ka Mea Hoʻolako: E koho i kahi mea hoʻolako kaulana me ka ʻike nui i ka hana ʻana i nā wafers SiC kiʻekiʻe a me nā substrates. E noʻonoʻo i nā mea e like me nā hiki ke hana, ka kaohi maikaʻi, a me nā loiloi o nā mea kūʻai aku.

Kumukūʻai: E noʻonoʻo i nā hopena o ke kumukūʻai, me ke kumukūʻai no kēlā me kēia wafer a i ʻole substrate a me nā lilo hoʻopilikino hou aʻe.

He mea nui e loiloi pono i kēia mau mea a kūkākūkā me nā loea ʻoihana a i ʻole nā ​​​​mea hoʻolako e hōʻoia i ka hoʻokō ʻana o nā wafers SiC a me nā substrates i koho ʻia i kāu mau koi noi kikoʻī.

Kiʻikuhi kikoʻī

ʻO ka wafer substrate SiC 4H-N 8 ʻīniha Silicon Carbide Dummy Research grade 500um mānoanoa (1)
ʻO ka wafer substrate SiC 4H-N 8 ʻīniha Silicon Carbide Dummy Research grade 500um mānoanoa (2)
ʻO ka wafer substrate SiC 4H-N 8 ʻīniha Silicon Carbide Dummy Research grade 500um mānoanoa (3)
4H-N 8 ʻīniha SiC substrate wafer Silicon Carbide Dummy Research grade 500um mānoanoa (4)
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