Nā Wafers Epitaxial 4H-SiC no nā MOSFET Voltage Ultra-High (100–500 μm, 6 ʻīniha)

Wehewehe Pōkole:

ʻO ka ulu wikiwiki ʻana o nā kaʻa uila, nā pūnaewele akamai, nā ʻōnaehana ikehu hou, a me nā lako hana ʻoihana mana kiʻekiʻe ua hoʻokumu i kahi pono wikiwiki no nā mea semiconductor i hiki ke lawelawe i nā voltages kiʻekiʻe, nā densities mana kiʻekiʻe, a me ka pono nui aʻe. Ma waena o nā semiconductors bandgap ākea,silicon carbide (SiC)kū i waho no kona bandgap ākea, ka conductivity thermal kiʻekiʻe, a me ka ikaika o ke kahua uila koʻikoʻi kiʻekiʻe.

E leka uila mai iā mākou

Nā hiʻohiʻona

Kiʻikuhi kikoʻī

ʻIke Huahana

ʻO kā mākouNā wafers epitaxial 4H-SiCua hana kūikawā ʻia nonā noi MOSFET uila kiʻekiʻe loaMe nā papa epitaxial e kū ana mai100 μm a i 500 μm on Nā substrates 6-'īniha (150 mm), hāʻawi kēia mau wafers i nā ʻāpana drift hoʻonui ʻia e pono ai no nā mea hana kV-class me ka mālama ʻana i ka maikaʻi kristal kūikawā a me ka scalability. ʻO nā mānoanoa maʻamau e komo pū me 100 μm, 200 μm, a me 300 μm, me ka hoʻopilikino ʻana i loaʻa.

Mānoanoa o ka Papa Epitaxial

He kuleana koʻikoʻi ko ka papa epitaxial i ka hoʻoholo ʻana i ka hana MOSFET, ʻoiai ke kaulike ma waenauila hakia meke kū'ē ʻana.

100–200 μmHoʻonohonoho pono ʻia no nā MOSFET uila waena a kiʻekiʻe, e hāʻawi ana i kahi kaulike maikaʻi loa o ka pono o ka hoʻoili ʻana a me ka ikaika ālai.
200–500 μmKūpono no nā mea uila kiʻekiʻe loa (10 kV+), e hiki ai i nā ʻāpana drift lōʻihi no nā ʻano haki paʻa.

Ma ka laulā holoʻokoʻa,ua kāohi ʻia ke ʻano like o ka mānoanoa i loko o ±2%, e hōʻoiaʻiʻo ana i ke kūlike mai ka wafer a i ka wafer a me ka batch a i ka batch. ʻAe kēia maʻalahi i nā mea hoʻolālā e hoʻomaikaʻi i ka hana o ka hāmeʻa no kā lākou mau papa voltage target me ka mālama ʻana i ka hana hou ʻana i ka hana nui.

Kaʻina Hana Hana

Hana ʻia kā mākou mau wafers me ka hoʻohana ʻanaʻO ka epitaxy CVD (Chemical Vapor Deposition) o kēia au hou loa, ka mea e hiki ai ke kaohi pololei i ka mānoanoa, ka doping, a me ka maikaʻi o ke aniani, ʻoiai no nā papa mānoanoa loa.

ʻO ka Epitaxy CVD– ʻO nā kinoea maʻemaʻe kiʻekiʻe a me nā kūlana i hoʻomaikaʻi ʻia e hōʻoia i nā ʻili laumania a me nā haʻahaʻa kīnā haʻahaʻa.
Ka ulu ʻana o ka papa mānoanoa- ʻAe nā ʻano hana ponoʻī i ka mānoanoa epitaxial a hiki i500 μmme ke kūlike maikaʻi loa.
Ka Mana Hoʻohui ʻAna- Hoʻololi ʻia ka noʻonoʻo ma waena1×10¹⁴ – 1×10¹⁶ kenimika⁻³, me ke ʻano like ʻoi aku ka maikaʻi ma mua o ±5%.
Hoʻomākaukau ʻana i ka ʻili– Ke hele nei nā wafersHoʻopili ʻia ʻana o CMPa me ka nānā pono ʻana, e hōʻoiaʻiʻo ana i ka kūlike me nā kaʻina hana holomua e like me ka gate oxidation, photolithography, a me ka metallization.

Nā Pōmaikaʻi Koʻikoʻi

Ka Mana Uila Kiʻekiʻe Loa– Kākoʻo nā papa epitaxial mānoanoa (100–500 μm) i nā hoʻolālā MOSFET papa kV.
Kūlana Kilika Kūikawā- ʻO ka dislocation haʻahaʻa a me nā densities kīnā papa basal e hōʻoiaʻiʻo i ka hilinaʻi a hoʻemi i ka leakage.
Nā Substrates Nui 6-'īniha– Kākoʻo no ka hana nui ʻana, hoʻemi ʻia ke kumukūʻai no kēlā me kēia hāmeʻa, a me ka hoʻohālikelike fab.
Nā Waiwai Wela Kiʻekiʻe– ʻO ke alakaʻi wela kiʻekiʻe a me ka bandgap ākea e hiki ai ke hana pono ma ka mana kiʻekiʻe a me ka mahana.
Nā Palena Hoʻopilikino– Hiki ke hoʻopilikino ʻia ka mānoanoa, ka doping, ke kuhikuhi ʻana, a me ka hoʻopau ʻana o ka ʻili i nā koi kikoʻī.

Nā Kikoʻī Maʻamau

Palena	Nā kikoʻī
ʻAno Hoʻokele	ʻAno-N (Hoʻohui ʻia me ka naikokene)
Ke kū'ē ʻana	Kekahi
Ke kihi ma waho o ke axis	4° ± 0.5° (e pili ana i [11-20])
Kūlana Kila	(0001) Si-maka
Mānoanoa	200–300 μm (hiki ke hoʻopilikino ʻia 100–500 μm)
Hoʻopau ʻili	Mua: CMP poli ʻia (epi-ready) Hope: lapped a poli ʻia paha
TTV	≤ 10 μm
Kakaka/Lūlū	≤ 20 μm

Nā Wahi Hoʻohana

He kūpono loa nā wafers epitaxial 4H-SiC noNā MOSFET i nā ʻōnaehana uila kiʻekiʻe loa, me:

Nā mea hoʻohuli traction kaʻa uila a me nā modula hoʻouka uila kiʻekiʻe
Nā lako hoʻoili a me ka hoʻolaha pūnaewele akamai
Nā mea hoʻohuli ikehu hou (lā, makani, waihona)
Nā lako ʻoihana mana kiʻekiʻe a me nā ʻōnaehana hoʻololi

Nā nīnau i nīnau pinepine ʻia

Q1: He aha ke ʻano o ka conductivity?
A1: ʻAno-N, i hoʻohui ʻia me ka naikokene - ke kūlana ʻoihana no nā MOSFET a me nā mea hana mana ʻē aʻe.

Q2: He aha nā mānoanoa epitaxial i loaʻa?
A2: 100–500 μm, me nā koho maʻamau ma 100 μm, 200 μm, a me 300 μm. Loaʻa nā mānoanoa maʻamau ma ke noi.

Q3: He aha ke kuhikuhi wafer a me ke kihi ma waho o ke axis?
A3: (0001) ʻAoʻao-Si, me 4° ± 0.5° ma waho o ke axis e kū pono ana i ke kuhikuhi [11-20].

E pili ana iā mākou

He loea ʻo XKH i ka hoʻomohala ʻenehana kiʻekiʻe, ka hana ʻana, a me ke kūʻai aku ʻana i ke aniani optical kūikawā a me nā mea kristal hou. Lawelawe kā mākou huahana i nā mea uila optical, nā mea uila mea kūʻai aku, a me ka pūʻali koa. Hāʻawi mākou i nā ʻāpana optical Sapphire, nā uhi lens kelepona paʻalima, Ceramics, LT, Silicon Carbide SIC, Quartz, a me nā wafers kristal semiconductor. Me ka ʻike loea a me nā lako hana kiʻekiʻe, ʻoi aku mākou i ka hana ʻana i nā huahana maʻamau ʻole, me ka manaʻo e lilo i alakaʻi i nā mea optoelectronic ʻoihana ʻenehana kiʻekiʻe.