4H/6H-P 6inch SiC wafer Zero MPD papa Hana Hana Dummy Papa

ʻO ka wehewehe pōkole:

ʻO ka 4H/6H-P type 6-inch SiC wafer he mea semiconductor i hoʻohana ʻia i ka hana ʻana i nā mea uila, ʻike ʻia no kāna conductivity thermal maikaʻi loa, kiʻekiʻe breakdown voltage, a me ke kūpaʻa ʻana i nā wela kiʻekiʻe a me ka corrosion. ʻO ka papa hana hana a me Zero MPD (Micro Pipe Defect) e hōʻoia i kona hilinaʻi a paʻa i nā uila uila hana kiʻekiʻe. Hoʻohana ʻia nā wafers i hana ʻia no ka hana ʻana i nā mea hana nui me ka mana koʻikoʻi, ʻoiai ʻo nā wafers dummy-grade ke hoʻohana mua ʻia no ka hana debugging a me ka hoʻāʻo ʻana i nā lako. ʻO nā waiwai koʻikoʻi o SiC e hoʻohana nui ʻia i nā mea uila kiʻekiʻe, kiʻekiʻe-voltage, a me nā mea uila uila kiʻekiʻe, e like me nā mana mana a me nā polokalamu RF.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

4H/6H-P ʻAno SiC Composite Substrates Papaʻaina hoʻohālikelike maʻamau

6 iniha ke anawaena Silicon Carbide (SiC). Hōʻike

Papa			ʻO Zero MPD ProductionPapa (Z Papa)	Hana maʻamauPapa (P Papa)	Papa Dummy (D Papa)
Anawaena			145.5 mm~150.0 mm
mānoanoa			350 μm ± 25 μm
Kūlana Wafer			-Offaxis: 2.0°-4.0° i [1120] ± 0.5° no 4H/6H-P, Ma ke axis:〈111〉± 0.5° no 3C-N
Micropipe Density			0 knm-2
Kū'ē	p-ʻano 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-ʻano 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Kūlana Pāha mua		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Ka lōʻihi pālahalaha			32.5 mm ± 2.0 mm
Ka lōʻihi pālahalaha lua			18.0 mm ± 2.0 mm
Kūlana Pāpā lua			ʻO ke alo silika i luna: 90° CW. mai Prime flat ± 5.0°
Hoʻokuʻu Edge			3 mm		6 mm
LTV/TTV/Bow/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm
ʻoʻoleʻa			Polani Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Nā Māwae ʻO Edge Ma ka Māmā ʻO ke Kiʻekiʻe			ʻAʻohe		Huina lōʻihi ≤ 10 mm, hoʻokahi lōʻihi≤2 mm
Nā Papa Hex Ma ka Māmā Kiʻekiʻe			ʻĀpana hui ≤0.05%		ʻĀpana hui ≤0.1%
Nā ʻāpana Polytype Ma ka Māmā Kiʻekiʻe			ʻAʻohe		ʻĀpana huila≤3%
Hoʻokomo ʻia ʻo Carbon Visual			ʻĀpana hui ≤0.05%		ʻĀpana hui ≤3%
ʻO ka ʻili o ka ʻili silikoni e ka māmā ikaika loa			ʻAʻohe		Hoʻohui lōʻihi≤1×wafer anawaena
Kiʻekiʻe ʻO nā Chips Edge ma ka māmā ikaika			ʻAʻohe ʻae ʻia ≥0.2mm laula a me ka hohonu		5 ʻae ʻia, ≤1 mm kēlā me kēia
ʻO ka hoʻohaumia ʻana o ka ʻili Silicon e ka ikaika kiʻekiʻe			ʻAʻohe
Hoʻopili ʻia			ʻO ka pahu wafer nui a i ʻole ka pahu wafer hoʻokahi

Nā memo:

※ Hoʻopili nā palena hemahema i ka ʻili wafer holoʻokoʻa koe wale nō ka wahi i kāpae ʻia. # Pono e nānā ʻia nā ʻōpala ma ka maka Si o

ʻO ka 4H/6H-P type 6-inch SiC wafer me Zero MPD grade a me ka hana a i ʻole ka dummy grade e hoʻohana nui ʻia i nā noi uila holomua. ʻO kāna conductivity thermal maikaʻi loa, ka uila haʻihaʻi kiʻekiʻe, a me ke kūpaʻa ʻana i nā kaiapuni paʻakikī e kūpono ia no nā uila uila, e like me nā hoʻololi kiʻekiʻe a me nā mea hoʻohuli. ʻO ka māka Zero MPD e hōʻoia i nā hemahema liʻiliʻi, koʻikoʻi no nā mea hilinaʻi kiʻekiʻe. Hoʻohana ʻia nā wafers i hana ʻia i ka hana nui ʻana i nā mea mana a me nā noi RF, kahi mea koʻikoʻi ka hana a me ka pololei. Ma ka ʻaoʻao ʻē aʻe, hoʻohana ʻia nā wafers dummy-grade no ka calibration kaʻina hana, ka hoʻāʻo ʻana i nā mea hana, a me ka prototyping, e ʻae ai i ka hoʻomalu maikaʻi ʻana i nā wahi hana semiconductor.

ʻO nā mea maikaʻi o N-type SiC composite substrates

Kiʻekiʻe Thermal Conductivity: Hoʻopau maikaʻi ka wafer 4H/6H-P SiC i ka wela, kūpono ia no nā noi uila kiʻekiʻe a me ka mana kiʻekiʻe.
Kiʻekiʻe Haʻahaʻa Voltage: ʻO kona hiki ke hoʻopaʻa i nā volta kiʻekiʻe me ka hiki ʻole ke kūpono no ka uila uila a me nā noi hoʻololi kiʻekiʻe-voltage.
Kole MPD (Micro Pipe Defect) Papa: ʻO ka liʻiliʻi defect density e hōʻoia i ka hilinaʻi kiʻekiʻe a me ka hana, koʻikoʻi no ke koi ʻana i nā mea uila.
Iecaianoaaiiuo-Grade no Mass Manufacturing: He kūpono no ka hana nui o nā mea semiconductor hana kiʻekiʻe me nā kūlana koʻikoʻi koʻikoʻi.
Dummy-Grade no ka ho'āʻo a me ka calibration: Hāʻawi i ka loiloi kaʻina hana, ka hoʻāʻo ʻana i nā mea hana, a me ka prototyping me ka ʻole o ka hoʻohana ʻana i nā wafers kumu kūʻai nui.

ʻO ka holoʻokoʻa, ʻo 4H/6H-P 6-inch SiC wafers me Zero MPD grade, production grade, a me dummy grade e hāʻawi i nā pōmaikaʻi nui no ka hoʻomohala ʻana i nā mea uila hana kiʻekiʻe. ʻO kēia mau wafers he mea maikaʻi loa i nā noi e koi ana i ka hana wela kiʻekiʻe, kiʻekiʻe ka mana kiʻekiʻe, a me ka hoʻololi mana kūpono. ʻO ka Zero MPD grade e hōʻoiaʻiʻo i nā hemahema liʻiliʻi no ka hana pono a me ka paʻa o ka mea hana, ʻoiai ke kākoʻo nei nā wafers-grade hana i ka hana nui me nā mana koʻikoʻi. Hāʻawi nā wafers Dummy-grade i kahi hopena maikaʻi loa no ka loiloi kaʻina hana a me ka calibration mea hana, e hoʻolilo iā lākou i mea nui no ka hana semiconductor kiʻekiʻe.