4H/6H-P 6'īniha SiC wafer Zero MPD grade Production Grade Dummy grade

Wehewehe Pōkole:

ʻO ka wafer SiC ʻano 4H/6H-P 6-'īniha he mea semiconductor i hoʻohana ʻia i ka hana ʻana i nā mea uila, i ʻike ʻia no kona conductivity thermal maikaʻi loa, ka voltage breakdown kiʻekiʻe, a me ke kūpaʻa ʻana i nā mahana kiʻekiʻe a me ka corrosion. ʻO ka papa hana a me ka Zero MPD (Micro Pipe Defect) e hōʻoiaʻiʻo i kona hilinaʻi a me ke kūpaʻa i nā mea uila mana hana kiʻekiʻe. Hoʻohana ʻia nā wafers papa hana no ka hana ʻana i nā mea hana nui me ka kaohi maikaʻi koʻikoʻi, ʻoiai ʻo nā wafers dummy-grade e hoʻohana nui ʻia no ka debugging kaʻina hana a me ka hoʻāʻo ʻana i nā lako. ʻO nā waiwai koʻikoʻi o SiC e hoʻohana nui ʻia i nā mea uila wela kiʻekiʻe, voltage kiʻekiʻe, a me ke alapine kiʻekiʻe, e like me nā mea mana a me nā mea RF.


Nā hiʻohiʻona

Papa kuhikuhi maʻamau no nā ʻano SiC Composite 4H/6H-P

6 ʻīniha ke anawaena o ka Silicon Carbide (SiC) Substrate Nā kikoʻī

Papa Hana ʻana o ka Zero MPDPapa (Z Papa) Hana MaʻamauPapa (P Papa) Papa Dummy (D Papa)
Anawaena 145.5 mm~150.0 mm
Mānoanoa 350 μm ± 25 μm
Hoʻonohonoho Wafer -Offaxis: 2.0°-4.0° i ka ʻaoʻao [1120] ± 0.5° no 4H/6H-P, Ma ke axis:〈111〉± 0.5° no 3C-N
Ka nui o ka micropipe 0 kenimika-2
Ke kū'ē ʻana ʻano-p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
ʻano-n 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Kūlana Pālahalaha Mua 4H/6H-P -{1010} ± 5.0°
3C-N -{110} ± 5.0°
Ka Lōʻihi Palahalaha Mua 32.5 mm ± 2.0 mm
Ka Lōʻihi Pālahalaha Lua 18.0 mm ± 2.0 mm
Kūlana Pālahalaha Lua Ke alo Silicon i luna: 90° CW. mai Prime flat ± 5.0°
Hoʻokaʻawale ʻana i ka lihi 3 mm 6 mm
LTV/TTV/Kakaka/Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm
ʻOʻoleʻa Polani Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm
Nā Māwae Lihi e ka Mālamalama Ikaika Kiʻekiʻe ʻAʻohe Ka lōʻihi hui ≤ 10 mm, ka lōʻihi hoʻokahi ≤2 mm
Nā Papa Hex Ma o ke Kukui Ikaika Kiʻekiʻe ʻĀpana hōʻuluʻulu ≤0.05% ʻĀpana hōʻuluʻulu ≤0.1%
Nā wahi Polytype e ka mālamalama ikaika kiʻekiʻe ʻAʻohe ʻĀpana hōʻuluʻulu ≤3%
Nā Hoʻokomo Kalapona ʻIke ʻĀpana hōʻuluʻulu ≤0.05% ʻĀpana hōʻuluʻulu ≤3%
Nā ʻōpala ʻili Silicon e ka mālamalama ikaika kiʻekiʻe ʻAʻohe Ka lōʻihi huina ≤1 × ke anawaena wafer
Kiʻekiʻe nā ʻāpana lihi ma o ka mālamalama ikaika ʻAʻohe mea i ʻae ʻia ≥0.2mm ka laulā a me ka hohonu 5 i ʻae ʻia, ≤1 mm kēlā me kēia
Ka haumia ʻana o ka ʻili Silicon ma o ka ikaika kiʻekiʻe ʻAʻohe
Ka hoʻopili ʻana Kaseta Wafer Multi-wafer a i ʻole ka Pahu Wafer Hoʻokahi

Nā memo:

※ Pili nā palena kīnā i ka ʻili wafer holoʻokoʻa koe wale nō ka ʻāpana hoʻokaʻawale lihi. # Pono e nānā ʻia nā ʻōpala ma ka ʻaoʻao Si o

Hoʻohana nui ʻia ka wafer SiC ʻano 4H/6H-P 6-'īniha me ka papa Zero MPD a me ka papa hana a i ʻole ka papa dummy i nā noi uila holomua. ʻO kona conductivity thermal maikaʻi loa, ka voltage breakdown kiʻekiʻe, a me ke kūʻē ʻana i nā ʻano ʻino e kūpono ia no nā mea uila mana, e like me nā kuapo voltage kiʻekiʻe a me nā inverters. Hōʻoia ka papa Zero MPD i nā hemahema liʻiliʻi, koʻikoʻi no nā mea hilinaʻi kiʻekiʻe. Hoʻohana ʻia nā wafers papa hana i ka hana nui ʻana o nā mea mana a me nā noi RF, kahi e koʻikoʻi ai ka hana a me ka pololei. Ma ka ʻaoʻao ʻē aʻe, hoʻohana ʻia nā wafers papa Dummy no ka calibration kaʻina hana, ka hoʻāʻo ʻana i nā lako, a me ka prototyping, e hiki ai ke kaohi maikaʻi mau i nā wahi hana semiconductor.

ʻO nā pono o nā substrates composite N-type SiC e komo pū ana

  • Ka Hoʻokele Wera KiʻekiʻeHoʻopau pono ka wafer 4H/6H-P SiC i ka wela, e kūpono ai no nā noi uila wela kiʻekiʻe a me ka mana kiʻekiʻe.
  • Ka Uila Haʻihaʻi KiʻekiʻeʻO kona hiki ke lawelawe i nā voltages kiʻekiʻe me ka ʻole o ka hemahema e kūpono ai ia no nā mea uila mana a me nā noi hoʻololi voltage kiʻekiʻe.
  • Papa MPD ʻole (Micro Pipe Defect)ʻO ka nui o nā hemahema liʻiliʻi e hōʻoiaʻiʻo i ka hilinaʻi a me ka hana kiʻekiʻe, he mea nui ia no nā polokalamu uila koi.
  • Papa Hana no ka Hana Nui ʻana: Kūpono no ka hana nui ʻana o nā mea semiconductor hana kiʻekiʻe me nā kūlana maikaʻi koʻikoʻi.
  • Papa Dummy no ka hoʻāʻo ʻana a me ka hoʻoponopono ʻana: Hiki ke hoʻonui i ke kaʻina hana, hoʻāʻo ʻana i nā lako, a me ke ʻano hana prototype me ka ʻole o ka hoʻohana ʻana i nā wafers papa hana kiʻekiʻe.

Ma keʻano holoʻokoʻa, hāʻawi nā wafers SiC 4H/6H-P 6-'īniha me ka Zero MPD grade, ka production grade, a me ka dummy grade i nā pono koʻikoʻi no ka hoʻomohala ʻana i nā mea uila hana kiʻekiʻe. He mea pono loa kēia mau wafers i nā noi e pono ai ka hana wela kiʻekiʻe, ka nui o ka mana kiʻekiʻe, a me ka hoʻololi mana kūpono. Hōʻoia ka Zero MPD grade i nā hemahema liʻiliʻi no ka hana pono a paʻa o ka mea hana, ʻoiai ʻo nā wafers grade-production e kākoʻo i ka hana nui me nā kaohi maikaʻi koʻikoʻi. Hāʻawi nā wafers grade-dummy i kahi hopena kūpono no ka hoʻonui ʻana i ke kaʻina hana a me ka calibration o nā lako, e lilo ia i mea nui no ka hana semiconductor precision kiʻekiʻe.

Kiʻikuhi kikoʻī

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