4 iniha Semi-insuling SiC wafers HPSI SiC substrate Prime Production grade

ʻO ka wehewehe pōkole:

ʻO ka 4-inch high-purity semi-insulated silicon carbide ʻelua ʻaoʻao polishing plate i hoʻohana nui ʻia i ka kamaʻilio 5G a me nā kahua ʻē aʻe, me nā mea maikaʻi o ka hoʻomaikaʻi ʻana i ke alapine o ka lekiō, ka ʻike mamao loa, anti-interference, kiʻekiʻe-wikiwiki, nui-kaha nui ka hoʻouna ʻike a me nā noi ʻē aʻe, a ua manaʻo ʻia ʻo ia ka substrate kūpono no ka hana ʻana i nā mana microwave.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

ʻO Silicon carbide (SiC) kahi mea semiconductor hui pū ʻia me nā mea kalapona a me ke silika, a ʻo ia kekahi o nā mea kūpono no ka hana ʻana i nā mea wela kiʻekiʻe, kiʻekiʻe-frequency, mana kiʻekiʻe a me nā mea uila kiʻekiʻe. Ke hoʻohālikelike ʻia me ka mea silika kahiko (Si), ʻekolu manawa ka laulā o ka silicon carbide i pāpā ʻia i ka silicon; ʻO ka conductivity thermal he 4-5 mau manawa o ke silika; ʻo 8-10 mau manawa ka haʻihaʻi haʻihaʻi o ke silika; a ʻo ka electron saturation drift rate he 2-3 mau manawa o ka silika, e kūpono ana i nā pono o ka ʻoihana hou no ka mana kiʻekiʻe, kiʻekiʻe-voltage, a me nā alapine kiʻekiʻe, a ua hoʻohana nui ʻia e hana i ka wikiwiki kiʻekiʻe, kiʻekiʻe-frequency, kiʻekiʻe-mana a me nā mea uila uila, a me kāna mau wahi noi i lalo e pili ana i ka māka akamai, nā kaʻa ikehu hou, nā mana uila uila photovoltaic, etc. Ua hoʻomaka ka hoʻohana ʻana i nā diodes a me MOSFET.

Nā pōmaikaʻi o nā wafers SiC / substrate SiC

Kūleʻa wela kiʻekiʻe. ʻO ka laula o ka silicon carbide i pāpā ʻia he 2-3 mau manawa o ke silika, no laila ʻoi aku ka liʻiliʻi o nā electrons e lele i nā mahana kiʻekiʻe a hiki ke kūpaʻa i nā mahana hana kiʻekiʻe, a ʻo ka conductivity thermal o ka silicon carbide he 4-5 mau manawa o ka silicon, e maʻalahi ka hoʻopau ʻana i ka wela mai ka hāmeʻa a ʻae i kahi kiʻekiʻe o ka wela hana. Hiki i nā hiʻohiʻona wela kiʻekiʻe ke hoʻonui i ka nui o ka mana, ʻoiai e hōʻemi ana i nā koi no ka ʻōnaehana hoʻoheheʻe wela, e hoʻonui i ka māmā a me ka miniaturised.

Kūleʻa uila kiʻekiʻe. ʻO ka ikaika o ke kahua hoʻoheheʻe o Silicon carbide he 10 mau manawa ma mua o ke kilika, hiki iā ia ke kū i nā volta kiʻekiʻe, e kūpono ana ia no nā mea uila kiʻekiʻe.

Kū'ē pinepine kiʻekiʻe. ʻO ka silikoni carbide i ʻelua mau manawa o ka saturation electron drift rate o ke silika, ka hopena i kāna mau mea hana i ke kaʻina pani ʻana ʻaʻole i loko o ke ʻano kauo o kēia manawa, hiki ke hoʻomaikaʻi maikaʻi i ka hoʻololi ʻana o ka hāmeʻa, e hoʻokō i ka miniaturization.

Haʻahaʻa ikehu poho. He haʻahaʻa haʻahaʻa loa ka Silicon carbide i ka hoʻohālikelike ʻia me nā mea silika, haʻahaʻa haʻahaʻa conduction nalowale; i ka manawa like, ʻo ka bandwidth kiʻekiʻe o ka silicon carbide e hoʻemi nui i ka leakage o kēia manawa, ka nalowale o ka mana; Eia kekahi, ʻaʻole i loaʻa nā mea carbide silicon i ke kaʻina pani i ka hanana kauo o kēia manawa, haʻahaʻa hoʻololi nalowale.