4'īniha nā wafer SiC semi-hōʻino HPSI SiC substrate Prime Production grade

Wehewehe Pōkole:

ʻO ka papa poli ʻaoʻao pālua semi-insulated semi-insulated 4-'īniha ka nui i hoʻohana nui ʻia i ka kamaʻilio 5G a me nā kahua ʻē aʻe, me nā pono o ka hoʻomaikaʻi ʻana i ka laulā alapine lekiō, ka ʻike mamao loa, ka anti-interference, ka wikiwiki kiʻekiʻe, ka hoʻouna ʻike nui a me nā noi ʻē aʻe, a ua manaʻo ʻia ʻo ia ke kahua kūpono no ka hana ʻana i nā mea mana microwave.

E leka uila mai iā mākou

Nā hiʻohiʻona

Nā kikoʻī huahana

ʻO Silicon carbide (SiC) kahi mea semiconductor hui i haku ʻia me nā mea kalapona a me silicon, a ʻo ia kekahi o nā mea kūpono no ka hana ʻana i nā mea wela kiʻekiʻe, alapine kiʻekiʻe, mana kiʻekiʻe a me nā voltage kiʻekiʻe. Ke hoʻohālikelike ʻia me ka mea silicon kuʻuna (Si), ʻo ka laulā o ke kaula i pāpā ʻia o ka silicon carbide he ʻekolu manawa o ka silicon; ʻo ka conductivity thermal he 4-5 manawa o ka silicon; ʻo ka voltage breakdown he 8-10 manawa o ka silicon; a ʻo ka electron saturation drift rate he 2-3 manawa o ka silicon, kahi e hoʻokō ai i nā pono o ka ʻoihana hou no ka mana kiʻekiʻe, voltage kiʻekiʻe, a me ke alapine kiʻekiʻe, a hoʻohana nui ʻia ia e hana i nā ʻāpana uila wikiwiki, alapine kiʻekiʻe, mana kiʻekiʻe a me ka hoʻomālamalama ʻana, a ʻo kāna mau wahi noi ma lalo e pili ana i ka grid akamai, nā kaʻa ikehu hou, ka mana makani photovoltaic, nā kamaʻilio 5G, a pēlā aku. Ma ke kahua o nā mea hana mana, ua hoʻomaka ʻia nā diode silicon carbide a me MOSFET e hoʻohana ʻia ma ke kālepa.

Nā Pōmaikaʻi o nā wafers SiC/SiC substrate

Ke kūpaʻa wela kiʻekiʻe. ʻO ka laulā o ke kaula i pāpā ʻia o ka silicon carbide he 2-3 mau manawa o ka silicon, no laila ʻoi aku ka liʻiliʻi o ka lele ʻana o nā electrons i nā mahana kiʻekiʻe a hiki ke kū i nā mahana hana kiʻekiʻe, a ʻo ka conductivity thermal o ka silicon carbide he 4-5 mau manawa o ka silicon, e maʻalahi ai ka hoʻokuʻu ʻana i ka wela mai ka hāmeʻa a e ʻae ana i kahi mahana hana palena kiʻekiʻe. Hiki i nā ʻano wela kiʻekiʻe ke hoʻonui nui i ka mana o ka mana, me ka hoʻemi ʻana i nā koi no ka ʻōnaehana hoʻokuʻu wela, e hoʻolilo ana i ke kikowaena i māmā a liʻiliʻi.

Ke kūpaʻa uila kiʻekiʻe. ʻO ka ikaika o ke kahua haki o ka silicone carbide he 10 mau manawa o ka silicon, e hiki ai iā ia ke kū i nā uila kiʻekiʻe, e ʻoi aku ka kūpono no nā mea uila kiʻekiʻe.

Ke kū'ē alapine kiʻekiʻe. ʻOi aku ka nui o ka saturation electron drift rate o ka silicon ma mua o ka silicon ma mua o ka silicone carbide, no laila ʻaʻole i loaʻa i kāna mau mea hana i ka wā o ke kaʻina hana pani ʻana i ka hanana kauō o kēia manawa, hiki ke hoʻomaikaʻi maikaʻi i ke alapine hoʻololi o ka mea hana, e hoʻokō i ka miniaturization o ka mea hana.

Haʻahaʻa ka pohō ikehu. He haʻahaʻa loa ke kū'ē ʻana o ka Silicon carbide i hoʻohālikelike ʻia me nā mea silicon, haʻahaʻa ka pohō hoʻoili; i ka manawa like, ʻo ka bandwidth kiʻekiʻe o ka silicon carbide e hōʻemi nui ana i ke au leakage, ka pohō mana; eia kekahi, ʻaʻohe mea silicon carbide i ke kaʻina hana pani i ka hanana kauō o kēia manawa, haʻahaʻa ka pohō hoʻololi.